Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
07/2012
07/04/2012CN102544049A Three-dimensional semiconductor storage device and preparation method for three-dimensional semiconductor storage device
07/04/2012CN102543877A Method for manufacturing three-dimensional semiconductor storage device
07/04/2012CN102543734A MOS (metal oxide semiconductor) device with memory function and forming method of MOS device
07/04/2012CN102534479A Microcrystalline Si-SbxTe1-x composite phase change material and preparation method thereof
07/04/2012CN102034929B Preparation method of plane phase-change memory
07/04/2012CN101897024B Nonvolatile memory device and fabrication method therefor
07/04/2012CN101878529B Nonvolatile storage device and method for manufacturing the same
07/04/2012CN101847688B Method for decreasing discreteness of resistance value of resistance change memory
07/04/2012CN101834273B Unit structure for reducing power consumption of phase-change memory and preparation method thereof
07/04/2012CN101800236B Semiconductor memory structure and manufacturing method thereof
07/04/2012CN101776718B Method for fast representing phase-change materials and dielectric layers
07/04/2012CN101740716B Phase-change memory element and its forming method
07/04/2012CN101540368B Memory cell and method for manufacturing a memory cell
07/04/2012CN101355137B Phase-changing storage device and manufacture method thereof
07/04/2012CN101252168B Phase change memory cell with heater and method for fabricating the same
07/04/2012CN101192649B Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
07/04/2012CN101064359B Non-volatile memory devices including variable resistance material
07/03/2012US8213217 Microelectronic programmable device and methods of forming and programming the same
07/03/2012US8212233 Forming phase-change memory using self-aligned contact/via scheme
06/2012
06/28/2012WO2012087183A2 Method for generating spin waves
06/28/2012WO2012086169A1 Method of manufacturing dielectric device and ashing method
06/28/2012WO2012083672A1 Three-dimension semiconductor memory device and manufacturing method thereof
06/28/2012US20120161094 3d semiconductor memory device and manufacturing method thereof
06/28/2012US20120161092 Phase change memory and method for fabricating the same
06/27/2012EP1846962B1 Phase change memory cell with high read margin at low power operation
06/27/2012CN1933208B Phase change memory device and method of manufacturing the device
06/27/2012CN102522501A Resistance random access memory with cross array structure and preparation method
06/27/2012CN102522500A Preparation method for phase change random storage array
06/27/2012CN102522499A Magnetic memory, electronic system, memory and providing method thereof
06/27/2012CN102522419A Large array of upward pointing P-I-N diodes having large and uniform current and methods of forming the same
06/27/2012CN102522418A Self-rectifying resistance random access memory with cross array structure and preparation method
06/27/2012CN102522374A Method for manufacturing a phase change memory device with pillar bottom electrode
06/27/2012CN102516879A Polishing solution for inhibiting electrochemical corrosion of phase change material
06/27/2012CN101699627B Nonvolatile storage array and preparation method thereof
06/27/2012CN101492443B Complex whorl aryl fluorene material, preparation and application method thereof
06/27/2012CN101427396B Programming a normally single phase chalcogenide material for use as a memory or fpla
06/21/2012WO2012081248A1 Non-volatile memory device
06/21/2012WO2012080967A1 Memristive element and electronic memory based on such elements
06/21/2012WO2012079296A1 Multilayer phase change material with low thermal conductivity
06/21/2012US20120153248 Three-terminal cascade switch for controlling static power consumption in integrated circuits
06/21/2012US20120153247 Semiconductor device having resistive device
06/20/2012CN102511079A Changing resistance-type nonvolatile memory device
06/20/2012CN102509732A Low-power-consumption embedded phase-change memory used in microcontroller, phase-change storing material thereof, and preparation method thereof
06/20/2012CN102054934B Preparation method of planar phase change storage
06/20/2012CN101958337B Phase change random access memory and manufacturing method thereof
06/20/2012CN101553924B Nonvolatile semiconductor storage device
06/19/2012US8203134 Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same
06/14/2012WO2012077518A1 Perovskite manganese oxide thin film and production method for same
06/14/2012WO2012077517A1 Perovskite manganese oxide thin film
06/14/2012WO2012077174A1 Nonvolatile storage device and method for manufacturing same
06/14/2012WO2011159583A3 Composition of memory cell with resistance-switching layers
06/14/2012US20120147668 Diode and Memory Device Having a Diode
06/14/2012US20120145987 Memory element and method of manufacturing the same, and memory device
06/14/2012US20120145984 Punch-through diode
06/13/2012CN101981695B Resistance change element and production method of same
06/13/2012CN101853922B Low-voltage resistive random access memory and preparation method thereof
06/13/2012CN101689548B Nonvolatile storage element, nonvolatile storage device, and method for writing data into nonvolatile storage element
06/13/2012CN101640251B Bottom electrode structural improvement of storage unit of phase-change memory and manufacturing implementation method
06/13/2012CN101615426B A programmable conductor random access memory and a method for writing thereto
06/13/2012CN101587936B Resistive random access memory based on bismuth iron thin film system and manufacturing method thereof
06/07/2012WO2012074131A1 Semiconductor device and production method for same
06/07/2012WO2012073503A1 Non-volatile storage element, non-volatile storage device, and method for manufacturing same
06/07/2012WO2012073471A1 Nonvolatile memory element and method for manufacturing method same
06/07/2012WO2012071892A1 Resistance conversion memory and method for manufacturing the same
06/07/2012US20120140542 Arrays of Nonvolatile Memory Cells
06/07/2012US20120138884 Programmable metallization memory cell with planarized silver electrode
06/06/2012EP1939941B1 Method of operating a switching element
06/06/2012CN102487124A Nanometer multilayer film, field-effect tube, sensor, random access memory and preparation method
06/06/2012CN102487123A Nanoscale non-volatile resistive random access memory unit and preparation method thereof
06/06/2012CN102487122A Non-volatile resistance transformation memory and preparation method thereof
06/06/2012CN102487121A Phase change random access memory array and formation method thereof, and phase change random access memory unit and formation method thereof
06/06/2012CN102487120A Formation method of phase change random access memory (PCRAM)
06/06/2012CN102487119A Sb2Tex-SiO2 nano composite phase change material used on phase change memory and preparation method of Sb2Tex-SiO2 nano composite phase change material
06/06/2012CN102487068A Manufacturing method of phase change random access memory (PCRAM)
06/06/2012CN101828262B Non-volatile memory element and non-volatile semiconductor device using the non-volatile memory element
06/05/2012US8193607 Memory cell having GeN-containing material and variable resistance material embedded within insulating material
06/05/2012US8193598 Spin-wave architectures
05/2012
05/31/2012WO2012070551A1 Device for manufacturing and method for manufacturing memory element
05/31/2012WO2012070238A1 Nonvolatile memory element, production method therefor, nonvolatile memory unit, and design assistance method for nonvolatile memory element
05/31/2012WO2012070236A1 Resistance-changing non-volatile storage device
05/31/2012WO2012070096A1 Non-volatile memory device and production method thereof
05/31/2012US20120135580 Three-Dimensional Memory Structures Having Shared Pillar Memory Cells
05/31/2012US20120132884 Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same
05/31/2012US20120132883 Resistive Switching Memory Device
05/31/2012US20120132880 Memristors with Asymmetric Electrodes
05/31/2012US20120132879 Nonvolatile memory device and method of manufacturing the same
05/30/2012CN1967688B Information recording medium and method for manufacturing the same
05/30/2012CN102484119A 带有具有倒圆拐角的多个支柱的交叉点非易失性存储器件及其制造方法 Intersection point with the rounded corners of a plurality of struts non-volatile memory device and manufacturing method with
05/30/2012CN102484114A Nonvolatile semiconductor memory device and method for fabricating same
05/30/2012CN102484113A SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD THEREof
05/30/2012CN102483950A Thermally Shielded Resistive Memory Element For Low Programming Current
05/30/2012CN102479925A Resistance transformation type memorizer structure with high ratio of transformation and preparation method thereof
05/30/2012CN102479924A 相变存储器的制作方法 The method of manufacturing a phase change memory
05/30/2012CN102479923A 相变存储器的制作方法 The method of manufacturing a phase change memory
05/30/2012CN102479922A 双层相变电阻以及相变存储器的形成方法 The method for forming the double phase transition and the phase change memory resistor
05/30/2012CN102479921A 相变存储器制造方法 Method of manufacturing a phase change memory
05/30/2012CN101911295B Nonvolatile semiconductor storage device, and method for manufacturing the same
05/30/2012CN101660119B Compound phase-change material target and preparation method thereof
05/30/2012CN101268564B Phase change memory cell and method of formation
05/30/2012CN101101964B Non-volatile memory device including a variable resistance material
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