Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
08/2012
08/02/2012US20120193597 Nonvolatile memory device
08/02/2012US20120193595 Composite target sputtering for forming doped phase change materials
08/01/2012EP2482499A1 Method, apparatus, system for address management
08/01/2012EP2481084A2 Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same
08/01/2012EP1446832B1 Electrode structure for use in an integrated circuit
08/01/2012CN102623638A Resistance random access memory and preparation method thereof
08/01/2012CN102623637A Resistive random access memory (RRAM) with electrically conductive channels formed controllably and producing method thereof
08/01/2012CN102623636A Resistance-type random access memory based on bismuth oxide film and production method of resistance-type random access memory
08/01/2012CN102623635A Tin dioxide based resistance type random read memorizer and preparation method thereof
08/01/2012CN102623634A Zinc oxide-doped film based resistance type memorizer and preparation method thereof
08/01/2012CN102623633A Memory cell of resistor type random access memory and preparation method thereof
08/01/2012CN102623632A N-Ge-Te phase change memory material used for high temperature environment and preparation method thereof
08/01/2012CN102623631A Resistance transformation type random access memory unit, memory, and preparation method
08/01/2012CN102623046A Resistance changing device for realizing multinary addition calculation, and multinary addition calculation method
08/01/2012CN102017145B Nonvolatile memory element and nonvolatile memory device
08/01/2012CN101834274B Preparation method of variable resistance metal nitride materials
08/01/2012CN101740718B Multi-resistance state resistor random-access memory unit and preparation method thereof
08/01/2012CN101057298B Memory and method for forming memory effect
07/2012
07/31/2012US8232543 Semiconductor device and method of manufacturing the same
07/31/2012US8232542 Phase change memory element with improved cyclability
07/26/2012WO2012098879A1 Resistance change element and manufacturing method therefor
07/26/2012WO2012097565A1 Phase change memory cell and manufacture method thereof
07/26/2012WO2012068127A3 Transistor driven 3d memory
07/26/2012US20120187362 Phase Change Memory Cell Structure
07/25/2012EP2479313A1 Amorphous Ge/Te deposition process
07/25/2012CN102612763A 相变化材料及相变化型存储元件 A phase change material and phase change memory element
07/25/2012CN102612716A Nonvolatile memory device
07/25/2012CN102610753A Preparing method of phase change memory containing graphene electrode material
07/25/2012CN102610752A Method for manufacturing memory resistor through three-dimensional maskless slurry direct writing forming and memory resistor
07/25/2012CN102610751A Method for preparing small hole of nano-sized resistive random access memory
07/25/2012CN102610750A Quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices
07/25/2012CN102610749A Resistive random access memory unit and memorizer
07/25/2012CN102610748A Nonvolatile memory unit and memory
07/25/2012CN102610747A Method for improving uniformity of nonvolatile resistance transformation type memorizer
07/25/2012CN102610746A Nonvolatile resistance transformation type memorizer
07/25/2012CN102610745A Si-Sb-Te based sulfur group compound phase-change material for phase change memory
07/25/2012CN101807665B Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material
07/25/2012CN101800282B Application of strontium stannate titanate film
07/25/2012CN101615425B Phase change memory with dual word lines and source lines and method of operating same
07/19/2012US20120181499 QUATERNARY GALLIUM TELLURIUM ANTIMONY (M-GaTeSb) BASED PHASE CHANGE MEMORY DEVICES
07/19/2012US20120181498 Vertical nonvolatile memory device and method for fabricating the same
07/18/2012CN102593357A Method for preparing phase change memory with nano memory performance
07/18/2012CN102593356A Preparation method of horizontal phase change storage irrelevant to photoetching resolution ratio
07/18/2012CN102593355A Antimony (Sb)-tellurium (Te)-titanium (Ti) phase-transition storage material and titanium-antimony telluride (Ti-Sb2Te3) phase-transition storage material
07/18/2012CN102593354A Method for producing resistive random access memory device capable of multilevel memory
07/18/2012CN102593353A Resistive random access memory and manufacturing method thereof
07/18/2012CN102593352A Method for preparing resistive random access memory
07/18/2012CN102593351A Low-power-consumption resistive random access memory structure and manufacturing method thereof
07/18/2012CN102593350A Phase change memory cell and producing method thereof
07/18/2012CN102593349A SixNy-based resistor-type memory and manufacturing method and application thereof
07/18/2012CN102593143A Transparent resistance random access memory
07/18/2012CN102593142A Anti-crosstalk flexible transparent memory array and production method thereof
07/18/2012CN102592664A Phase change memory device with fast write characteristics
07/18/2012CN102157688B Resistive random-access memory (RRAM) and manufacturing method thereof
07/17/2012US8222630 Organic memory device having memory active region formed by embossing structure
07/17/2012US8222627 Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element
07/17/2012US8222626 Semiconductor memory device, method of manufacturing the same, and method of screening the same
07/17/2012US8222625 Non-volatile memory device including phase-change material
07/12/2012US20120176831 Resistive Random Access Memory With Low Current Operation
07/12/2012US20120175580 Variable resistance memory
07/11/2012CN1866568B 半导体装置 Semiconductor device
07/11/2012CN102576709A Nonvolatile storage device and method for manufacturing same
07/11/2012CN102569652A Sb-Te-Ti phase-change storage material and Ti-Sb2Te phase-change storage material
07/11/2012CN102569651A Manufacturing method of resistance random access memory
07/11/2012CN102569650A Small-size resistive random access memory and preparation method of small-size resistive random access memory
07/11/2012CN102569649A Semiconductor device having resistive device
07/11/2012CN102569648A Phase change memory and manufacturing method thereof
07/11/2012CN102569647A Manufacturing method for phase change memory
07/11/2012CN102569646A Manufacturing method of phase change memory
07/11/2012CN102569645A PCM (phase change memory) and forming method thereof
07/11/2012CN102569644A Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof
07/11/2012CN102569335A Memory element and method of manufacturing the same, and memory device
07/11/2012CN102569334A RRAM (resistance random access memory) device and system
07/11/2012CN102568582A Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device
07/11/2012CN101924069B Preparation method of high-peed and high-density three-dimensional resistance conversion storage structure
07/10/2012US8217380 Polysilicon emitter BJT access device for PCRAM
07/10/2012US8216877 Phase-change memory and fabrication method thereof
07/05/2012WO2012090404A1 Nonvolatile storage element and method for manufacturing same
07/05/2012WO2011159582A3 Memory cell with resistance- switching layers and lateral arrangement
07/05/2012US20120170352 Thermo programmable resistor based rom
07/05/2012US20120168709 Single mask adder phase change memory element
07/05/2012US20120168708 Memory Device Constructions, Memory Cell Forming Methods, and Semiconductor Construction Forming Methods
07/05/2012US20120168706 Resistance random access memory
07/05/2012US20120168705 Bipolar Switching Memory Cell With Built-in "On" State Rectifying Current-Voltage Characteristics
07/04/2012EP2472624A1 Method for etching a microelectronic programmable memory device
07/04/2012CN202308073U Nonvolatile storage element
07/04/2012CN102544366A Resistance switch based on cobalt ferrite nano-film and preparation method therefor
07/04/2012CN102544365A Resistance random access memory and manufacturing method thereof
07/04/2012CN102544364A Memory element and memory device
07/04/2012CN102544363A Preparation method for phase change memory bottom electrode structure
07/04/2012CN102544362A Phase change material for phase change storage and method for adjusting phase change parameter
07/04/2012CN102544361A Phase-change material for phase-change memory and method for adjusting phase-change parameter of phase-change material
07/04/2012CN102544360A Phase-change memory forming method
07/04/2012CN102544359A Memristor and manufacturing method for same
07/04/2012CN102544358A Phase change memory and preparation method thereof
07/04/2012CN102544357A Method for manufacturing resistance transition type memory
07/04/2012CN102544356A Method for preparing heating layer of phase change memory
07/04/2012CN102544355A Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof
07/04/2012CN102544354A CuxO resistance type memorizer integrated with copper interconnection back-end structure and preparation method thereof
07/04/2012CN102544076A Resistive random access memory (RRAM) gated by bipolar transistor, RRAM array and manufacturing method for RRAM
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