Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
09/2012
09/13/2012US20120228575 Nanoscale electronic device with barrier layers
09/13/2012US20120228574 Variable resistive memory device and method of manufacturing the same
09/12/2012EP2498291A1 Resistive memory element and related control method
09/12/2012CN102668085A Resistive switching in nitrogen-doped mgo
09/12/2012CN102667947A Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
09/12/2012CN102667946A Phase change memory element
09/12/2012CN102664236A Ring electrode structure for low-power-consumption phase change memory and preparation method
09/12/2012CN102664235A Small-electrode-structure resistance random access memory and preparation method of small-electrode-structure resistance random access memory
09/11/2012US8264061 Phase change memory cell and devices containing same
09/11/2012US8263961 Thin film memory device having a variable resistance
09/11/2012US8263958 Layered resistance variable memory device and method of fabrication
09/07/2012WO2012118791A1 Methods for increasing bottom electrode performance in carbon- based memory devices, using titanium - rich titanium nitride
09/07/2012WO2012117773A1 Solid-state memory
09/07/2012WO2012117467A1 Reconfigurable circuit
09/06/2012US20120225534 Self-aligned cross-point phase change memory-switch array
09/06/2012US20120225533 Variable resistance memory device and method of manufacturing the same
09/06/2012US20120224413 Non-Volatile Storage System Using Opposite Polarity Programming Signals For MIM Memory Cell
09/06/2012US20120223286 Electroforming-free nanoscale switching device
09/06/2012US20120223284 Variable resistive element, method for producing the same, and nonvolatile semiconductor memory device including the variable resistive element
09/06/2012DE112010003853T5 VViderstandsschalten in Stickstoffdotiertem MgO VViderstandsschalten in nitrogen doped MgO
09/05/2012EP2494555A1 Non-volatile memory array architecture incorporating 1t-1r near 4f2 density memory cell
09/05/2012CN102656692A 非易失性存储装置 Non-volatile memory device
09/05/2012CN102656689A Memory device and manufacturing method therefor
09/05/2012CN102655211A Preparation method of resistance random access memory and resistance random access memory
09/05/2012CN102655210A Variable resistive element, method for producing the same, and nonvolatile semiconductor memory device including the variable resistive element
09/05/2012CN102655090A Manufacturing method of vertical diode array
09/05/2012CN102653863A Preparation method of Ru-Li codoped nickel oxide film
09/05/2012CN101882628B Rectifying device for cross array structure memory
09/05/2012CN101789490B Ferroelectric oxide/semiconductor composite film diode resistance change memory
09/05/2012CN101615655B Conductive oxide transition layer and phase-changing memory unit with same
09/04/2012US8258495 Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony
08/2012
08/30/2012WO2012114744A1 Non-volatile storage element and manufacturing method thereof
08/30/2012US20120220100 Pillar structure for memory device and method
08/30/2012US20120220099 Forming a Phase Change Memory With an Ovonic Threshold Switch
08/30/2012US20120218806 Memory Cells, Methods of Forming Memory Cells, and Methods of Programming Memory Cells
08/30/2012US20120217464 Nonvolatile storage device
08/30/2012US20120217463 Semiconductor memory devices and methods of forming the same
08/30/2012US20120217462 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
08/30/2012US20120217461 Semiconductor memory device and method of manufacturing the same
08/29/2012CN101478030B Phase-change memory including interlayer and manufacturing process
08/28/2012US8252644 Method for forming a nonvolatile memory cell comprising a reduced height vertical diode
08/23/2012WO2012111205A1 Nonvolatile variable resistance element
08/23/2012WO2011159582A4 Memory cell with resistance- switching layers and lateral arrangement
08/23/2012US20120211722 Three-dimensional memory array stacking structure
08/23/2012US20120211721 Semiconductor storage device and manufacturing method thereof
08/23/2012US20120211719 Nonvolatile variable resistive device
08/23/2012US20120211718 Semiconductor storage device
08/23/2012US20120211717 Semiconductor memory device and manufacturing method thereof
08/23/2012US20120211716 Oxygen ion implanted conductive metal oxide re-writeable non-volatile memory device
08/23/2012US20120211715 Semiconductor device including phase change material and method of manufacturing same
08/22/2012EP2099071B1 Resistance change device and process for producing the same
08/22/2012CN102648522A Nonvolatile storage element, method for manufacturing same, and nonvolatile storage device
08/22/2012CN102646790A Non-volatile memory
08/22/2012CN101958397B Manufacture method of resistor storage
08/22/2012CN101911296B Phase-change memory element, phase-change memory cell, vacuum treatment device, and method for manufacturing phase-change memory element
08/22/2012CN101292350B Semiconductor device and manufacturing method thereof
08/21/2012US8247789 Memory cells and methods of forming memory cells
08/21/2012US8247788 Nonvolatile memory device
08/16/2012WO2012108185A1 Non-volatile storage element drive method and initialization method and non-volatile storage device
08/16/2012WO2012108151A1 Nonvolatile latch circuit, nonvolatile flip-flop circuit and nonvolatile signal processing device
08/16/2012US20120205612 Nonvolatile semiconductor memory device and method of manufacturing the same
08/16/2012US20120205610 Resistive switching memory element including doped silicon electrode
08/16/2012US20120205609 Memory device and method for manufacturing the same
08/16/2012US20120205608 Nonvolatile variable resistance device and method of manufacturing the nonvolatile variable resistance element
08/16/2012US20120205607 Phase-change random access memory devices and methods of manufacturing the same
08/16/2012US20120205606 Nonvolatile Memory Device Using The Resistive Switching of Graphene Oxide And The Fabrication Method Thereof
08/15/2012EP2324503B1 Memory devices and methods of forming the same
08/15/2012EP1953824B1 Semiconductor device
08/15/2012CN1638125B Nonvolatile capacitor of a semiconductor memory device, semiconductor memory and method of operating the same
08/15/2012CN102640287A Resistance-changing non-volatile storage device
08/15/2012CN102637823A Limited electrode structure for low-power-consumption phase change memory and preparation method thereof
08/15/2012CN102637822A High-purity chalcogenide phase change alloy target and preparation method for same
08/15/2012CN102637821A Phase change memory unit and forming method thereof
08/15/2012CN102637820A Phase change random access memory forming method
08/15/2012CN102637658A Electronic device with built-in over-voltage-protection composite film
08/15/2012CN101866942B Ring-shaped electrode and manufacturing method for same
08/14/2012US8243509 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
08/14/2012US8242478 Switching device, semiconductor device, programmable logic integrated circuit, and memory device
08/09/2012WO2012105232A1 Data read method of non-volatile recording element and non-volatile recording device
08/09/2012WO2012105225A1 Variable resistance nonvolatile storage device and method for manufacturing same
08/09/2012WO2012105214A1 Method for manufacturing variable resistance element
08/09/2012WO2012105139A1 Switching element, semiconductor device, and methods for manufacturing switching element and semiconductor device
08/09/2012US20120199804 Heterojunction oxide non-volatile memory device
08/08/2012EP2485288A1 High efficiency energy source
08/08/2012CN102630340A Process for manufacture of non-volatile semiconductor storage element
08/08/2012CN102629662A Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process
08/08/2012CN102629661A Composite target sputtering for forming doped phase change materials
08/08/2012CN101826596B Production method of phase-change memory
08/08/2012CN101454919B Electric device with phase change resistor
08/07/2012US8237141 Non-volatile memory device including phase-change material
08/07/2012US8237140 Self-aligned, embedded phase change RAM
08/07/2012US8236685 Phase change memory device having multiple metal silicide layers and method of manufacturing the same
08/02/2012WO2012102025A1 Nonvolatile memory device
08/02/2012WO2012100562A1 Resistive random access unit and resistive random access memory
08/02/2012WO2012100502A1 Nonvolatile memory unit and memory device
08/02/2012WO2012100501A1 Resistance conversion type random memory unit and memory device
08/02/2012WO2011159583A4 Composition of memory cell with resistance-switching layers
08/02/2012US20120193602 Nanoscopic wire-based devices and arrays
08/02/2012US20120193599 Phase change memory cell array with self-converged bottom electrode and method for manufacturing
08/02/2012US20120193598 Memory Devices and Formation Methods
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