Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
10/2012
10/24/2012CN102751435A Phase change storage material and preparation method thereof
10/24/2012CN102751304A High intensity memory device based on phase-transition memory material and manufacturing method
10/24/2012CN101494220B Resistive memory devices and methods of manufacturing the same
10/18/2012WO2012141898A2 Vertical memory cell for highdensity memory
10/18/2012WO2012140971A1 Perovskite-type manganese oxide thin film
10/18/2012WO2012140887A1 Nonvolatile storage element and method of manufacturing thereof
10/18/2012US20120261638 Vertical memory cell for high-density memory
10/18/2012US20120261637 Oxide based memory with a controlled oxygen vacancy conduction path
10/18/2012US20120261636 Resistive random access memory (ram) cell and method for forming
10/18/2012US20120261635 Resistive random access memory (ram) cell and method for forming
10/17/2012EP2511280A1 Germanium amidinate complexes useful for CVD/ALD of metal thin films
10/17/2012CN102742011A Nonvolatile storage element and method for manufacturing same
10/17/2012CN102738391A Resistance random access memory with adjustable dielectric layer magnetic property
10/17/2012CN102738390A RRAM unit and manufacturing method thereof
10/17/2012CN102738389A Semiconductor device possessing memristor characteristic and manufacturing method thereof
10/17/2012CN102738388A Semiconductor device possessing memristor characteristic and method for realizing multilevel storage
10/17/2012CN102738387A Memristor based on TiOx structure and manufacturing method of memristor
10/17/2012CN102738386A Resistive random access memory and manufacturing method thereof
10/17/2012CN102219898B Poly-schiff base for resistance-type storage material
10/17/2012CN101964394B Method for preparing phase change unit of phase change memory
10/11/2012WO2012136435A1 Electronic memory device
10/11/2012US20120256155 Closed loop sputtering controlled to enhance electrical characteristics in deposited layer
10/11/2012US20120256154 Semiconductor Phase Change Memory Using Multiple Phase Change Layers
10/11/2012US20120256153 Diode for variable-resistance material memories, processes of forming same, and methods of using same
10/11/2012US20120256151 Memory Cells, Methods of Forming Memory Cells and Methods of Forming Memory Arrays
10/11/2012US20120256150 Integrated Circuitry, Methods of Forming Memory Cells, and Methods of Patterning Platinum-Containing Material
10/10/2012CN102725874A Post deposition method for regrowth of crystalline phase change material
10/10/2012CN102723435A Method for preparing resistance random access memory device realizing multiple-valued storage performance based on interface oxygen vacancy
10/10/2012CN102723434A Memory unit of resistor type random access memory and preparing method thereof
10/09/2012US8283650 Flat lower bottom electrode for phase change memory cell
10/09/2012US8283202 Single mask adder phase change memory element
10/04/2012US20120250395 Selector type electronic device
10/04/2012US20120248398 Vertical transistor phase change memory
10/04/2012US20120248396 Resistive switching in memory cells
10/03/2012CN102714210A Nonvolatile storage element and method for manufacturing nonvolatile storage element
10/03/2012CN102714057A Non-volatile memory array architecture incorporating 1t-1r near 4f2 memory cell
10/03/2012CN102709473A Preparation method of Ru-Al co-doped Ni-Sn composite film
10/03/2012CN102709472A Full-transparent resistive random access memory and application of barium stannate on aspect of using barium stannate as transparent material with stable resistance changing characteristic
10/03/2012CN102709471A Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
10/03/2012CN102709470A Nano-multilayer film, field effect tube, sensor, random access memory and preparation method
10/03/2012CN102709469A Formation method of phase change random access memory
10/03/2012CN102709308A MOS (Metal Oxide Semiconductor) transistor structure integrated with resistive random access memory and manufacturing method of MOS transistor structure
10/03/2012CN102709307A Tunneling transistor structure integrated with resistive random access memory and manufacturing method of tunneling transistor structure
09/2012
09/27/2012WO2012128134A1 Semiconductor memory device
09/27/2012WO2012128017A1 Resistive memory device and method for writing to same
09/27/2012WO2012127863A1 Organic molecular memory
09/27/2012WO2012127861A1 Method for manufacturing nonvolatile storage device
09/27/2012WO2012127735A1 Variable resistance element and semiconductor memory device
09/27/2012WO2012127718A1 Resistance-change memory
09/27/2012WO2012127542A1 Organic molecular memory and method of manufacturing the same
09/27/2012WO2012126222A1 Metal oxide resistor memory and method for preparing the same
09/27/2012WO2012126186A1 Resistance variable memory and fabricating method thereof
09/27/2012US20120243292 Memory device
09/27/2012US20120241715 Semiconductor memory
09/27/2012US20120241712 Resistive-Switching Memory and Fabrication Method Thereof
09/27/2012US20120241711 Multi-level memory cell
09/27/2012US20120241710 Fabrication of RRAM Cell Using CMOS Compatible Processes
09/27/2012US20120241709 Variable resistance element using electrochemical reaction and manufacturing method thereof
09/27/2012US20120241707 Nonvolatile memory device
09/27/2012US20120241706 Resistance switchable conductive filler for reram and its preparation method
09/27/2012US20120241705 Methods of Forming Memory Cells.
09/27/2012US20120241704 Lateral phase change memory
09/26/2012CN102696107A Resistance-varying element and process for production thereof
09/26/2012CN102694122A Two terminal re-writeable non-volatile ion transport memory device
09/26/2012CN102694121A Method for manufacturing resistance memory device and product and application thereof
09/26/2012CN102694120A Phase-change random access memory and manufacturing method thereof
09/26/2012CN102694119A Method for manufacturing phase-change random access memory
09/26/2012CN102694118A A resistance random access memory and a preparation method thereof
09/26/2012CN102693985A Programmable memory and manufacturing method thereof
09/26/2012CN102690604A Chemico-mechanical polishing liquid
09/26/2012CN101847647B Nonvolatile semiconductor memory device and manufacturing method for same
09/26/2012CN101765914B Storage element and storage device
09/20/2012WO2012124314A1 Non-volatile storage element drive method and non-volatile storage device
09/20/2012US20120236625 Memory element and memory device
09/20/2012US20120235112 Resistive switching memory and method for manufacturing the same
09/20/2012US20120235111 Nonvolatile memory element having a tantalum oxide variable resistance layer
09/20/2012US20120235110 Phase-change material and phase-change type memory device
09/20/2012US20120235109 Non-volatile semiconductor storage device and manufacturing method of non-volatile semiconductor storage device
09/20/2012US20120235108 Method of forming memory cell using gas cluster ion beams
09/20/2012US20120235107 Nonvolatile memory device
09/20/2012US20120235106 Methods of forming at least one conductive element, methods of forming a semiconductor structure, methods of forming a memory cell and related semiconductor structures
09/19/2012EP2500945A1 Memory cell
09/19/2012CN102683587A Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory
09/19/2012CN102683586A Multiple-value resistance random access memory applicable to neural circuit and control method of resistance random access memory
09/19/2012CN102683585A Resistive memory integrating standard complementary metal oxide semiconductor (CMOS) process and preparation method of resistive memory
09/19/2012CN102683584A Metal oxide resistance memory integrating a standard complementary metal oxide semiconductor (CMOS) process and preparation method thereof
09/19/2012CN102683583A Unipolar resistive random access memory and manufacturing method thereof
09/19/2012CN102683378A 存储元件和存储装置 Memory element and the memory device
09/19/2012CN102185103B Memory unit of resistance type random access memory and manufacturing method thereof
09/19/2012CN101924072B Phase change memory having stabilized microstructure and integrated circuit manufacturing method
09/19/2012CN101916823B Phase change storage device based on antimony telluride composite phase change material and preparation method thereof
09/19/2012CN101836296B Variable resistance nonvolatile memory device and memory cell formation method
09/18/2012US8269207 Memory device having variable resistance memory cells disposed at crosspoint of wirings
09/18/2012US8269206 Processing phase change material to improve programming speed
09/13/2012WO2012120893A1 Method for producing non-volatile recording device
09/13/2012WO2012087183A3 Method for generating spin waves
09/13/2012US20120231603 Methods of forming phase change material layers and methods of manufacturing phase change memory devices
09/13/2012US20120230128 Integrated Circuitry, Switches, and Methods of Selecting Memory Cells of a Memory Device
09/13/2012US20120228578 Resistive Memory Element and Related Control Method
09/13/2012US20120228577 Phase change memory device and method of manufacturing the same
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