Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2012
12/06/2012US20120305875 Phase-change random access memory device and method of manufacturing the same
12/06/2012US20120305873 Vertical interconnect structure, memory device and associated production method
12/06/2012US20120305872 Phase-change memory device including a vertically-stacked capacitor and a method of the same
12/05/2012CN202585542U Resistance-type storage based on doped zinc oxide film
12/05/2012CN102810637A Phase change storage unit for replacing DRAM (dynamic random access memory) and FLASH and manufacturing method thereof
12/05/2012CN102810636A Phase-changing memory unit with similar super lattice structure and preparation method thereof
12/05/2012CN102810635A Write once read many type storage device and manufacturing method thereof
12/05/2012CN102810634A Resistance type random access memory with high stability and preparation method for resistance type random access memory
12/05/2012CN102810633A Phase-change random access memory device and method of manufacturing the same
12/05/2012CN102810632A Parallel resistance memory and preparation method thereof
12/05/2012CN102810631A Method for manufacturing phase change memory
12/05/2012CN102810554A Schottky diode, resistive memory device having schottky diode and method of manufacturing the same
12/04/2012US8324045 Method of forming semiconductor device having common node that contacts plural stacked active elements and that has resistive memory elements corresponding to the active elements
12/01/2012WO2012005003A1 Nonvolatile semiconductor memory device and method for fabricating same
11/2012
11/29/2012WO2010117640A3 Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
11/29/2012US20120300535 Non-volatile memory device ion barrier
11/29/2012US20120300533 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
11/29/2012US20120298947 Low temperature p+ silicon junction material for a non-volatile memory device
11/29/2012US20120298946 Shaping a Phase Change Layer in a Phase Change Memory Cell
11/29/2012US20120298945 Nonvolatile semiconductor memory device and manufacturing method thereof
11/28/2012CN102804278A Forming method for variable resistance non-volatile memory element and variable resistance non-volatile memory device
11/28/2012CN102800808A Antimony-rich high-speed phase change material for phase change memory, method for preparing antimony-rich high-speed phase change material and application of material
11/28/2012CN102800807A Oxygen-doped nanometre thin-film material for low-power-consumption and high-reliability phase change memory as well as preparation and application of thin-film material
11/28/2012CN102800806A Bipolar multistage plane resistance random access memory, conducting substrate thereof, and preparation method thereof
11/28/2012CN102800805A Phase change storage unit and forming method thereof
11/28/2012CN102800360A Method of forming process for variable resistive element and non-volatile semiconductor memory device
11/28/2012CN102034927B Impedance memorizer and manufacture method thereof
11/28/2012CN101872838B Memory cell having a buried phase change region and method for fabricating the same
11/28/2012CN101330127B Switching element
11/27/2012US8319204 Semiconductor device
11/27/2012US8319203 Phase change material, a phase change random access memory device including the phase change material, and a semiconductor structure including the phase change material
11/22/2012WO2012158719A1 Ion implant modification of resistive random access memory devices
11/22/2012US20120294075 Phase-change memory device
11/22/2012US20120294072 Phase-Change Memory and a Method of Programming the Same
11/22/2012US20120294065 Variable resistance memory device and method of fabricating the same
11/22/2012US20120292589 Nonvolatile memory element and method of manufacturing the nonvolatile memory element
11/22/2012US20120292586 Nonvolatile variable resistance element
11/22/2012DE112010003917T5 Einkristallines Phasenwechselmaterial Single crystal phase change material
11/21/2012CN102790073A Variable resistance nonvolatile memory device and memory cell formation method
11/21/2012CN101872837B Resistive layer, resistive storage having same and process for preparing same
11/21/2012CN101868855B Memory cell
11/15/2012WO2012153818A1 Resistance-changing element, semiconductor device including same, and processes for producing these
11/15/2012WO2012151725A1 Semiconductor memory structure and control method thereof
11/15/2012US20120287709 Non volatile semiconductor memory device and manufacturing method thereof
11/15/2012US20120287707 Optoelectronic memory devices
11/15/2012US20120286231 Semiconductor device and method of manufacturing the same
11/15/2012US20120286229 Memory Cells
11/15/2012US20120286226 Nonvolatile Memory Devices And Methods Of Fabricating The Same
11/15/2012US20120286225 Semiconductor device and method of manufacturing the same
11/14/2012EP2522041A1 Electrically actuated switch
11/14/2012CN102782847A Resistance change device and memory cell array
11/14/2012CN102782846A Non-volatile memory element and non-volatile memory device equipped with same
11/14/2012CN102779941A Low-power-consumption phase-change storage unit and preparation method thereof
11/14/2012CN102779940A Phase-change random access memory device and method of manufacturing the same
11/14/2012CN102779828A 半导体存储器件 A semiconductor memory device
11/14/2012CN102024838B Integrated circuit including electrode having recessed portion
11/14/2012CN101960595B 非易失性存储元件 Non-volatile storage element
11/14/2012CN101958398B Thermal protect pcram structure and methods for making
11/14/2012CN101937970B Phase change memory having one or more non-constant doping profiles
11/14/2012CN101931049B Anti-fatigue phase change storage unit with low power consumption and preparation method thereof
11/14/2012CN101916822B Phase change memory unit device and preparation method thereof
11/14/2012CN101877384B Low operational current phase change memory structures
11/13/2012US8309958 Semiconductor memory device and method of manufacturing same
11/08/2012US20120284218 Neuron device and neural network
11/08/2012US20120281452 Resistive random memory cell and memory
11/08/2012US20120280202 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
11/08/2012US20120280201 Optimized electrodes for re-ram
11/08/2012US20120280200 Resistance changing element, semiconductor device, and method for forming resistance change element
11/08/2012US20120280199 Nonvolatile memory element, method of manufacturing the same, and nonvolatile memory device
11/08/2012US20120280198 Gcib-treated resistive device
11/08/2012US20120280197 Flat lower bottom electrode for phase change memory cell
11/08/2012US20120280196 Electroforming free memristor
11/08/2012US20120280195 Resistance variable memory cells and methods
11/08/2012DE10297786B4 Programmierung eines Phasenübergangsmaterialspeichers Programming a phase change material storage
11/07/2012CN202523771U Resistive random access memory based on bismuth oxide film
11/07/2012CN202523770U Stannic oxide-based resistance type random access memory
11/07/2012CN102769101A GeTe4 phase-change memory element and preparation method thereof
11/07/2012CN101978496B Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
11/07/2012CN101568971B Nonvolatile memory element, nonvolatile semiconductor storage device, and method for reading and writing thereof
11/01/2012US20120273748 Interconnects for stacked non-volatile memory device and method
11/01/2012US20120273745 Method of manufacturing a phase change semiconductor device and the phase change semiconductor device
11/01/2012US20120273743 Nonvolatile semiconductor memory device
11/01/2012US20120273742 Semiconductor storage device
10/2012
10/31/2012CN102763331A Nonvolatile latch circuit, nonvolatile flip-flop circuit and nonvolatile signal processing device
10/31/2012CN102760833A Thin film plate phase change ram circuit and manufacturing method
10/31/2012CN102760832A Manufacture method of phase change semiconductor device and phase change semiconductor device
10/31/2012CN102760831A Phase change memory and formation method thereof
10/31/2012CN102759669A Experimental method of nanometer size effects of analytical device operation window and phase-change material
10/31/2012CN101958396B Device for forming phase change material and system for manufacturing phase change memory
10/31/2012CN101861649B Nonvolatile memory device and manufacturing method therefor
10/26/2012WO2012142735A1 Semiconductor memory structure and method for manufacturing same
10/25/2012US20120268980 Nonvolatile variable resistive element and nonvolatile semiconductor memory device
10/25/2012US20120267601 Phase change memory cells with surfactant layers
10/25/2012US20120267600 Memory cell repair
10/25/2012US20120267597 Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
10/25/2012US20120267595 Memory component and a memory cell
10/24/2012EP2513994A2 Carbon/tunneling-barrier/carbon diode
10/24/2012CN102754234A Methods of self-aligned growth of chalcogenide memory access device
10/24/2012CN102751437A Electric-activation-free resistive random access memory and preparation method thereof
10/24/2012CN102751436A Vertical selection pipe, storage unit, three-dimensional memory array and operation method thereof
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