Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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01/10/2013 | US20130009127 Resistive memory and methods of processing resistive memory |
01/10/2013 | US20130009126 Programmable metallization cells and methods of forming the same |
01/10/2013 | US20130009125 Low resistance semiconductor device |
01/10/2013 | US20130009124 Resistive ram having the function of diode rectification |
01/10/2013 | US20130009123 Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device |
01/09/2013 | CN102870246A Carbon/tunneling-barrier/carbon diode |
01/09/2013 | CN102870245A Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head |
01/09/2013 | CN102867913A Method for forming annular storage unit of magnetoresistive memory |
01/09/2013 | CN102867912A Resistive ram having the function of diode rectification |
01/09/2013 | CN102867911A Resistance memory and preparation method thereof |
01/08/2013 | US8350333 Semiconductor device and method for manufacturing same |
01/03/2013 | WO2013001742A1 Nonvolatile semiconductor storage element, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device |
01/03/2013 | US20130001505 Multilayer structure comprising a phase change material layer and method of producing the same |
01/03/2013 | US20130001504 Nonvolatile memory element and method for manufacturing the same |
01/03/2013 | US20130001503 Conductive filament based memory elements and methods with improved data retention and/or endurance |
01/03/2013 | US20130001502 Phase-change memory device, flexible phase-change memory device using insulating nano-dot and manufacturing method for the same |
01/03/2013 | US20130001500 Pore phase change material cell fabricated from recessed pillar |
01/03/2013 | US20130001499 Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells |
01/03/2013 | US20130001498 Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memory Cells, Methods Of Reading To And Writing From A Memory Cell, And Methods Of Programming A Memory Cell |
01/03/2013 | US20130001497 Memory element, method of manufacturing the same, and memory device |
01/03/2013 | US20130001496 Memory element, method of manufacturing the same, and memory device |
01/03/2013 | US20130001495 Multilevel mixed valence oxide (mvo) memory |
01/03/2013 | US20130001494 Memory Cell |
01/02/2013 | EP2541770A1 Delay generator using a programmable resistance made of phase-change material |
01/02/2013 | EP2539936A2 Memory cell with silicon-containing carbon switching layer and methods for forming the same |
01/02/2013 | CN102859690A Method for manufacturing nonvolatile memory device, nonvolatile memory element, and nonvolatile memory device |
01/02/2013 | CN102856492A Memory element, method of manufacturing the same, and memory device |
01/02/2013 | CN102856491A Method for forming bottom electrode and phase-change resistor |
01/02/2013 | CN102855929A Memory element, method of manufacturing the same, and memory device |
01/02/2013 | CN102855928A Electric resistance transformation memory array and storage operation method therefor |
01/02/2013 | CN102134698B Al-Sb-Te series phase change material for phase change memory and preparation method thereof |
01/02/2013 | CN102082227B Methods for reducing recrystallization time for a phase change material |
01/02/2013 | CN102054853B 相变随机存取存储器及制造方法 Phase change random access memory and a method of manufacturing |
01/02/2013 | CN101847687B Phase-change memory element and manufacturing method thereof |
01/02/2013 | CN101689402B Electric device comprising phase change material and heating element |
01/02/2013 | CN101533669B Regulation for resistance switching mode of multilayer film structure for resistance type random access memory |
01/01/2013 | US8344350 Phase change device with offset contact |
01/01/2013 | US8343813 Resistive-switching memory elements having improved switching characteristics |
12/27/2012 | WO2012176452A1 Semiconductor recording device |
12/27/2012 | US20120327702 Nonvolatile memory element and nonvolatile memory device |
12/27/2012 | US20120326114 Phase-change random access memory device and method of manufacturing the same |
12/27/2012 | US20120326113 Non-volatile memory element and non-volatile memory device equipped with same |
12/27/2012 | US20120326111 Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS |
12/27/2012 | US20120326110 Phase change memory devices and methods of manufacturing the same |
12/27/2012 | US20120326109 Phase change memory cell and phase chage memory |
12/26/2012 | CN102842673A Phase-change random access memory device and method of manufacturing the same |
12/26/2012 | CN102027598B Carbon nano-film reversible resistance-switchable elements and methods of forming the same |
12/26/2012 | CN101779248B Storage device drive method |
12/25/2012 | US8339834 Non-volatile semiconductor memory device including a variable resistance element |
12/20/2012 | WO2012172898A1 Strongly correlated oxide field effect element |
12/20/2012 | US20120322223 Methods of manufacturing phase-change memory devices |
12/20/2012 | US20120320657 Programmable Resistive Memory Unit with Multiple Cells to Improve Yield and Reliability |
12/20/2012 | US20120319076 Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same |
12/20/2012 | US20120319075 Semiconductor device including storage device and method for driving the same |
12/20/2012 | US20120319074 Resistance change device and memory cell array |
12/20/2012 | US20120319073 Variable resistance memory device having reduced bottom contact area and method of forming the same |
12/20/2012 | US20120319071 Non-volatile semiconductor memory device and manufacturing method thereof |
12/20/2012 | US20120319069 Phase Change Memory Device |
12/19/2012 | EP2534710A1 Post deposition method for regrowth of crystalline phase change material |
12/19/2012 | CN102832343A Multi-resistance-state memristor |
12/19/2012 | CN102832342A Phase change storage unit containing titanium silicon nitrogen (TiSiN) material layers and preparation method of phase change storage unit |
12/19/2012 | CN102832341A Al-Sb-Se nano-phase change thin film material and preparation method and application thereof |
12/19/2012 | CN102832340A Phase transition storage unit and manufacture method thereof |
12/19/2012 | CN102832339A Al-Ge-Te phase-change material for phase change memory |
12/19/2012 | CN102832338A Constraint structured phase change memory and manufacturing method thereof |
12/19/2012 | CN102832337A Multi-bit memory elements, memory devices, and methods |
12/18/2012 | US8334186 Method of forming a memory device incorporating a resistance variable chalcogenide element |
12/13/2012 | WO2012169198A1 Nonvolatile storage element, method of manufacturing thereof, initial breaking method, and nonvolatile storage device |
12/13/2012 | WO2012169195A1 Variable resistance element, and method for producing same |
12/13/2012 | WO2012169194A1 Method and device for producing variable resistance element |
12/13/2012 | WO2012168981A1 Semiconductor storage device |
12/13/2012 | US20120315737 Methods of forming variable resistive memory devices |
12/13/2012 | US20120314479 Memory element and memory device |
12/13/2012 | US20120313072 Three-dimensional semiconductor memory devices having double cross point array and methods of fabricating the same |
12/13/2012 | US20120313071 Contact structure and method for variable impedance memory element |
12/13/2012 | US20120313070 Controlled switching memristor |
12/13/2012 | US20120313068 Nonvolatile semiconductor storage device and a manufacturing method thereof |
12/13/2012 | US20120313067 Semiconductor devices and methods of manufacturing the same |
12/13/2012 | US20120313065 Semiconductor memory device and method for manufacturing the same |
12/13/2012 | US20120313064 Semiconductor memory device and method for manufacturing the same |
12/12/2012 | EP2532037A1 Memory cell with parallel electrical paths |
12/12/2012 | EP2532028A1 A memory cell that includes a sidewall collar for pillar isolation and methods of forming the same |
12/12/2012 | CN102820428A Improved oxide-film resistance changing memory and improvement method thereof |
12/12/2012 | CN102820427A Zn-doped Ge2Sb2Te5 phase-change storage film material and preparation method thereof |
12/12/2012 | CN102820426A 存储元件和存储装置 Memory element and the memory device |
12/12/2012 | CN102820425A Phase-change and resistive-random memory with multilayered structure and method for manufacturing phase-change and resistive-random memory |
12/12/2012 | CN102820223A Chemical-mechanical polishing method for simultaneously polishing phase-change material and tungsten |
12/11/2012 | US8330138 Electronic device comprising a convertible structure, and a method of manufacturing an electronic device |
12/06/2012 | WO2012165018A1 Nonvolatile resistance change element |
12/06/2012 | WO2012162867A1 Resistive random access memory using electric field enhancement layer and method for manufacturing same |
12/06/2012 | US20120309161 Processing Phase Change Material to Improve Programming Speed |
12/06/2012 | US20120309159 Method to selectively grow phase change material inside a via hole |
12/06/2012 | US20120307555 Phase change memory structures and methods |
12/06/2012 | US20120307552 Process of producing a resistivity-change memory cell intended to function in a high-temperature environment |
12/06/2012 | US20120305884 Variable resistance memory device and methods of forming the same |
12/06/2012 | US20120305883 Metal oxide resistive switching memory and method for manufacturing same |
12/06/2012 | US20120305882 NiO-based Resistive Random Access Memory and the Preparation Method Thereof |
12/06/2012 | US20120305880 Resistive random access memory with electric-field strengthened layer and manufacturing method thereof |
12/06/2012 | US20120305878 Resistive switching memory device |
12/06/2012 | US20120305876 Schottky diode, resistive memory device having schottky diode and method of manufacturing the same |