Patents
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
01/2013
01/10/2013US20130009127 Resistive memory and methods of processing resistive memory
01/10/2013US20130009126 Programmable metallization cells and methods of forming the same
01/10/2013US20130009125 Low resistance semiconductor device
01/10/2013US20130009124 Resistive ram having the function of diode rectification
01/10/2013US20130009123 Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device
01/09/2013CN102870246A Carbon/tunneling-barrier/carbon diode
01/09/2013CN102870245A Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head
01/09/2013CN102867913A Method for forming annular storage unit of magnetoresistive memory
01/09/2013CN102867912A Resistive ram having the function of diode rectification
01/09/2013CN102867911A Resistance memory and preparation method thereof
01/08/2013US8350333 Semiconductor device and method for manufacturing same
01/03/2013WO2013001742A1 Nonvolatile semiconductor storage element, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
01/03/2013US20130001505 Multilayer structure comprising a phase change material layer and method of producing the same
01/03/2013US20130001504 Nonvolatile memory element and method for manufacturing the same
01/03/2013US20130001503 Conductive filament based memory elements and methods with improved data retention and/or endurance
01/03/2013US20130001502 Phase-change memory device, flexible phase-change memory device using insulating nano-dot and manufacturing method for the same
01/03/2013US20130001500 Pore phase change material cell fabricated from recessed pillar
01/03/2013US20130001499 Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells
01/03/2013US20130001498 Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memory Cells, Methods Of Reading To And Writing From A Memory Cell, And Methods Of Programming A Memory Cell
01/03/2013US20130001497 Memory element, method of manufacturing the same, and memory device
01/03/2013US20130001496 Memory element, method of manufacturing the same, and memory device
01/03/2013US20130001495 Multilevel mixed valence oxide (mvo) memory
01/03/2013US20130001494 Memory Cell
01/02/2013EP2541770A1 Delay generator using a programmable resistance made of phase-change material
01/02/2013EP2539936A2 Memory cell with silicon-containing carbon switching layer and methods for forming the same
01/02/2013CN102859690A Method for manufacturing nonvolatile memory device, nonvolatile memory element, and nonvolatile memory device
01/02/2013CN102856492A Memory element, method of manufacturing the same, and memory device
01/02/2013CN102856491A Method for forming bottom electrode and phase-change resistor
01/02/2013CN102855929A Memory element, method of manufacturing the same, and memory device
01/02/2013CN102855928A Electric resistance transformation memory array and storage operation method therefor
01/02/2013CN102134698B Al-Sb-Te series phase change material for phase change memory and preparation method thereof
01/02/2013CN102082227B Methods for reducing recrystallization time for a phase change material
01/02/2013CN102054853B 相变随机存取存储器及制造方法 Phase change random access memory and a method of manufacturing
01/02/2013CN101847687B Phase-change memory element and manufacturing method thereof
01/02/2013CN101689402B Electric device comprising phase change material and heating element
01/02/2013CN101533669B Regulation for resistance switching mode of multilayer film structure for resistance type random access memory
01/01/2013US8344350 Phase change device with offset contact
01/01/2013US8343813 Resistive-switching memory elements having improved switching characteristics
12/2012
12/27/2012WO2012176452A1 Semiconductor recording device
12/27/2012US20120327702 Nonvolatile memory element and nonvolatile memory device
12/27/2012US20120326114 Phase-change random access memory device and method of manufacturing the same
12/27/2012US20120326113 Non-volatile memory element and non-volatile memory device equipped with same
12/27/2012US20120326111 Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS
12/27/2012US20120326110 Phase change memory devices and methods of manufacturing the same
12/27/2012US20120326109 Phase change memory cell and phase chage memory
12/26/2012CN102842673A Phase-change random access memory device and method of manufacturing the same
12/26/2012CN102027598B Carbon nano-film reversible resistance-switchable elements and methods of forming the same
12/26/2012CN101779248B Storage device drive method
12/25/2012US8339834 Non-volatile semiconductor memory device including a variable resistance element
12/20/2012WO2012172898A1 Strongly correlated oxide field effect element
12/20/2012US20120322223 Methods of manufacturing phase-change memory devices
12/20/2012US20120320657 Programmable Resistive Memory Unit with Multiple Cells to Improve Yield and Reliability
12/20/2012US20120319076 Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same
12/20/2012US20120319075 Semiconductor device including storage device and method for driving the same
12/20/2012US20120319074 Resistance change device and memory cell array
12/20/2012US20120319073 Variable resistance memory device having reduced bottom contact area and method of forming the same
12/20/2012US20120319071 Non-volatile semiconductor memory device and manufacturing method thereof
12/20/2012US20120319069 Phase Change Memory Device
12/19/2012EP2534710A1 Post deposition method for regrowth of crystalline phase change material
12/19/2012CN102832343A Multi-resistance-state memristor
12/19/2012CN102832342A Phase change storage unit containing titanium silicon nitrogen (TiSiN) material layers and preparation method of phase change storage unit
12/19/2012CN102832341A Al-Sb-Se nano-phase change thin film material and preparation method and application thereof
12/19/2012CN102832340A Phase transition storage unit and manufacture method thereof
12/19/2012CN102832339A Al-Ge-Te phase-change material for phase change memory
12/19/2012CN102832338A Constraint structured phase change memory and manufacturing method thereof
12/19/2012CN102832337A Multi-bit memory elements, memory devices, and methods
12/18/2012US8334186 Method of forming a memory device incorporating a resistance variable chalcogenide element
12/13/2012WO2012169198A1 Nonvolatile storage element, method of manufacturing thereof, initial breaking method, and nonvolatile storage device
12/13/2012WO2012169195A1 Variable resistance element, and method for producing same
12/13/2012WO2012169194A1 Method and device for producing variable resistance element
12/13/2012WO2012168981A1 Semiconductor storage device
12/13/2012US20120315737 Methods of forming variable resistive memory devices
12/13/2012US20120314479 Memory element and memory device
12/13/2012US20120313072 Three-dimensional semiconductor memory devices having double cross point array and methods of fabricating the same
12/13/2012US20120313071 Contact structure and method for variable impedance memory element
12/13/2012US20120313070 Controlled switching memristor
12/13/2012US20120313068 Nonvolatile semiconductor storage device and a manufacturing method thereof
12/13/2012US20120313067 Semiconductor devices and methods of manufacturing the same
12/13/2012US20120313065 Semiconductor memory device and method for manufacturing the same
12/13/2012US20120313064 Semiconductor memory device and method for manufacturing the same
12/12/2012EP2532037A1 Memory cell with parallel electrical paths
12/12/2012EP2532028A1 A memory cell that includes a sidewall collar for pillar isolation and methods of forming the same
12/12/2012CN102820428A Improved oxide-film resistance changing memory and improvement method thereof
12/12/2012CN102820427A Zn-doped Ge2Sb2Te5 phase-change storage film material and preparation method thereof
12/12/2012CN102820426A 存储元件和存储装置 Memory element and the memory device
12/12/2012CN102820425A Phase-change and resistive-random memory with multilayered structure and method for manufacturing phase-change and resistive-random memory
12/12/2012CN102820223A Chemical-mechanical polishing method for simultaneously polishing phase-change material and tungsten
12/11/2012US8330138 Electronic device comprising a convertible structure, and a method of manufacturing an electronic device
12/06/2012WO2012165018A1 Nonvolatile resistance change element
12/06/2012WO2012162867A1 Resistive random access memory using electric field enhancement layer and method for manufacturing same
12/06/2012US20120309161 Processing Phase Change Material to Improve Programming Speed
12/06/2012US20120309159 Method to selectively grow phase change material inside a via hole
12/06/2012US20120307555 Phase change memory structures and methods
12/06/2012US20120307552 Process of producing a resistivity-change memory cell intended to function in a high-temperature environment
12/06/2012US20120305884 Variable resistance memory device and methods of forming the same
12/06/2012US20120305883 Metal oxide resistive switching memory and method for manufacturing same
12/06/2012US20120305882 NiO-based Resistive Random Access Memory and the Preparation Method Thereof
12/06/2012US20120305880 Resistive random access memory with electric-field strengthened layer and manufacturing method thereof
12/06/2012US20120305878 Resistive switching memory device
12/06/2012US20120305876 Schottky diode, resistive memory device having schottky diode and method of manufacturing the same
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