| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 02/28/2013 | US20130048937 Method for forming resistive switching memory elements |
| 02/28/2013 | US20130048936 Phase change memory and method of fabricating same |
| 02/28/2013 | US20130048935 Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials |
| 02/27/2013 | EP2561546A2 Vertical transistor phase change memory |
| 02/27/2013 | CN102947935A Method for manufacturing variable resistance element |
| 02/27/2013 | CN102945924A TiSbTe phase-change storage material, preparation method and application thereof |
| 02/27/2013 | CN102945923A Complementary type resistive random access memory and production method thereof |
| 02/27/2013 | CN101826595B WOx-based resistance type memory and preparation method thereof |
| 02/27/2013 | CN101548403B Electrically actuated switch |
| 02/26/2013 | US8384059 Phase-change memory device |
| 02/26/2013 | US8384057 Phase-change memory device having multiple diodes |
| 02/21/2013 | US20130044532 Low temperature beol compatible diode having high voltage margins for use in large arrays of electronic components |
| 02/21/2013 | US20130043455 Vertical Cross Point Arrays For Ultra High Density Memory Applications |
| 02/21/2013 | US20130043454 Non-volatile resistive switching memories formed using anodization |
| 02/21/2013 | US20130043453 Nonvolatile Memory Devices that Use Resistance Materials and Internal Electrodes |
| 02/21/2013 | US20130043452 Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements |
| 02/21/2013 | US20130043451 Nonvolatile Memory Elements And Memory Devices Including The Same |
| 02/20/2013 | EP2559068A1 Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same |
| 02/20/2013 | CN102939655A Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same |
| 02/20/2013 | CN101315942B Resistive random access memory device |
| 02/19/2013 | US8377791 Nonvolatile memory element and production method thereof and storage memory arrangement |
| 02/14/2013 | WO2013021682A1 Variable resistance memory and method of manufacturing the same |
| 02/14/2013 | WO2013021674A1 Variable resistance memory and method of manufacturing the same |
| 02/14/2013 | US20130037777 Non-volatile storage device and method for manufacturing the same |
| 02/14/2013 | US20130037776 Variable resistance memory |
| 02/14/2013 | US20130037775 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element |
| 02/14/2013 | US20130037774 Semiconductor device |
| 02/14/2013 | US20130037773 Ionic devices with interacting species |
| 02/14/2013 | US20130037772 Memory Cells |
| 02/13/2013 | CN102931349A Chip memristor and preparation method thereof |
| 02/13/2013 | CN102931348A Lead memristor and preparation method thereof |
| 02/13/2013 | CN102931347A Resistive random access memory and preparation method thereof |
| 02/13/2013 | CN102931346A Memristor device and manufacturing method thereof |
| 02/13/2013 | CN102931345A Memristor device based on flexible substrate and manufacturing method thereof |
| 02/13/2013 | CN102931344A Nanowire memristor and manufacture method thereof |
| 02/13/2013 | CN102931343A Resistance random access memory and method for reducing forming voltage of resistance random access memory |
| 02/13/2013 | CN102931206A Circuit structure of high-density phase change memory and manufacturing method for circuit structure |
| 02/13/2013 | CN102117823B Resistance conversion storage nano-structure and self-aligning manufacturing method thereof |
| 02/13/2013 | CN101552282B Phase-change memory device and method of fabricating the same |
| 02/12/2013 | US8373149 Resistance change element and manufacturing method thereof |
| 02/12/2013 | US8373148 Memory device with improved performance |
| 02/07/2013 | WO2013018842A1 Semiconductor device and method for manufacturing same |
| 02/07/2013 | US20130033922 Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation |
| 02/07/2013 | US20130033920 Ionic devices containing a membrane between layers |
| 02/07/2013 | US20130032775 MRAM with sidewall protection and method of fabrication |
| 02/06/2013 | CN102918675A Memory cell with parallel electrical paths |
| 02/06/2013 | CN102918647A Non-volatile storage device and method for manufacturing the same |
| 02/06/2013 | CN102916129A Resistance random access memory based on vanadium oxide/zinc oxide laminated structure and preparation method thereof |
| 02/06/2013 | CN102916128A Method for producing tungsten oxide based resistive memorizer |
| 02/06/2013 | CN101548334B Nonvolatile semiconductor storage device |
| 02/06/2013 | CN101292299B Semi-conductor device |
| 02/05/2013 | US8367513 Systems and methods for fabricating self-aligned memory cell |
| 01/31/2013 | WO2012141898A3 Memory cell for high-density rram devices |
| 01/31/2013 | US20130029456 Antimony and germanium complexes useful for cvd/ald of metal thin films |
| 01/31/2013 | US20130028005 Resistive memory array and method for controlling operations of the same |
| 01/31/2013 | US20130028003 Nonvolatile memory device having a current limiting element |
| 01/31/2013 | US20130026440 Nanoscale switching devices with partially oxidized electrodes |
| 01/31/2013 | US20130026439 Semiconductor device and method of fabricating the same |
| 01/31/2013 | US20130026438 Current-limiting layer and a current-reducing layer in a memory device |
| 01/31/2013 | US20130026437 Resistance variable memory device and method for fabricating the same |
| 01/31/2013 | US20130026435 Switching device and resistance change memory device using the same |
| 01/31/2013 | US20130026434 Memristor with controlled electrode grain size |
| 01/30/2013 | CN102903847A P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously |
| 01/30/2013 | CN102903846A Sb80Te20/SbSe nanometer composite multi-layer phase change film and preparing method and application thereof |
| 01/30/2013 | CN102903845A Resistive random access memory and manufacture method thereof |
| 01/30/2013 | CN102903844A Bottom electrode and phase-change resistor forming method |
| 01/30/2013 | CN101409303B Multi-layer electrode and cross point memory array |
| 01/29/2013 | US8362625 Contact structure in a memory device |
| 01/29/2013 | US8362455 Storage node of a resistive random access memory device with a resistance change layer and method of manufacturing the same |
| 01/24/2013 | US20130020548 Seed layer for a p+ silicon germanium material for a non-volatile memory device and method |
| 01/24/2013 | US20130020547 Phase change current density control structure |
| 01/23/2013 | EP2549535A1 Nonvolatile memory element, production method therefor, design support method therefor, and nonvolatile memory device |
| 01/23/2013 | EP2548239A1 Bottom electrodes for use with metal oxide resistivity switching layers |
| 01/23/2013 | EP2548238A1 Bottom electrodes for use with metal oxide resistivity switching layers |
| 01/23/2013 | CN102891253A Resistance random access memory and manufacturing method thereof |
| 01/23/2013 | CN102891252A Ge-rich GST-212 phase change memory materials |
| 01/23/2013 | CN102891162A Memory device and method of manufacturing the same |
| 01/23/2013 | CN102077347B Memory-cell array, nonvolatile storage device, memory-cell, and manufacturing method of memory-cell array |
| 01/23/2013 | CN101997082B Self-convergence bottom electrode ring |
| 01/23/2013 | CN101689602B Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same |
| 01/23/2013 | CN101459220B Resistive memory device and method of forming the same |
| 01/23/2013 | CN101447502B Non-volatile memory devices and methods of fabricating and using the same |
| 01/17/2013 | WO2013007113A1 Transparent and flexible organic resistive random access memory and method for manufacturing same |
| 01/17/2013 | US20130016557 Semiconductor memory device having a three-dimensional structure |
| 01/17/2013 | US20130016555 Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same |
| 01/17/2013 | US20130015423 Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element |
| 01/17/2013 | US20130015422 Reactive metal implated oxide based memory |
| 01/16/2013 | EP1905086B1 Method for forming multi-layered binary oxide film for use in resistance random access memory |
| 01/16/2013 | CN102881824A Resistance change memory and preparation method thereof |
| 01/16/2013 | CN102881823A Phase-change random access memory device and method of manufacturing the same |
| 01/16/2013 | CN102881822A Transparent flexible resistance random access memory and manufacturing method therefor |
| 01/16/2013 | CN101999170B Sidewall structured switchable resistor cell |
| 01/16/2013 | CN101958399B Phase change memory and method for manufacturing the same |
| 01/10/2013 | WO2013005040A1 Oxide memory resistor including semiconductor nanoparticles |
| 01/10/2013 | WO2013003979A1 Method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process |
| 01/10/2013 | WO2013003978A1 Containing ruthenium-doped tantalum oxide based resistive type memory and method for fabricating the same |
| 01/10/2013 | US20130011991 Method of forming a memory device incorporating a resistance variable chalcogenide element |
| 01/10/2013 | US20130010529 Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element |
| 01/10/2013 | US20130010526 Multi-level memory cell |
| 01/10/2013 | US20130010520 Memory device and fabricating method thereof |