Patents
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
04/2013
04/17/2013CN102208534B Three-terminal full-control-type switch element based on resistance-variation material and preparation method thereof
04/17/2013CN102169956B WOx-based resistive memory and preparation method thereof
04/17/2013CN102148328B Oxide resistor storage device and preparation method thereof
04/17/2013CN101533849B Resistive memory devices and method of forming the same
04/16/2013US8421048 Non-volatile memory with active ionic interface region
04/11/2013WO2013051267A1 Nonvolatile storage element and nonvolatile storage device
04/11/2013WO2013051066A1 Semiconductor storage device and method of fabricating same
04/11/2013US20130089965 Resistive memory device and method of fabricating the same
04/11/2013US20130089949 Method for Reducing Forming Voltage in Resistive Random Access Memory
04/11/2013US20130087757 Resistive memory device and method of manufacturing the same
04/11/2013US20130087755 Electrically actuated switch
04/10/2013CN103035841A Ti-Ge-Te series material for phase change memory and preparation method thereof
04/10/2013CN103035840A Resistive random access memory and preparation method thereof
04/10/2013CN103035839A Resistive random access memory and preparation method thereof
04/10/2013CN103035838A Resistive random access memory component and preparation method thereof
04/10/2013CN103035837A Structure and manufacturing method of semiconductor device
04/09/2013US8416603 Nonvolatile memory device
04/09/2013US8415653 Single mask adder phase change memory element
04/04/2013WO2013047734A1 Polishing composition
04/04/2013WO2013047733A1 Polishing composition
04/04/2013WO2013044612A1 Vertical selection transistor, memory cell, and three-dimensional memory array structure and method for fabricating the same
04/04/2013US20130083048 Integrated circuit with active memory and passive variable resistive memory with shared memory control logic and method of making same
04/04/2013US20130082231 Semiconductor device and manufacturing method for semiconductor device
04/04/2013US20130082230 Method of manufacturing nonvolatile memory element, and nonvolatile memory element
04/03/2013CN103022351A Flexible storer based on memristor and thin-film transistor and implementation of multi-resistance state
04/03/2013CN103022350A Memory resistor and production method thereof
04/03/2013CN103022349A Phase change random access memory and method for manufacturing the same
04/03/2013CN103022348A 相变存储器及其形成方法 And method of forming a phase change memory
04/03/2013CN103022347A Semiconductor device and manufacture method thereof
04/03/2013CN103022346A Resistance-type memorizer
04/02/2013US8410469 Chalcogenide nanoionic-based radio frequency switch
03/2013
03/28/2013WO2013040859A1 Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method
03/28/2013US20130078475 Germanium antimony telluride materials and devices incorporating same
03/28/2013US20130075840 Method for fabrication of a magnetic random access memory (mram) using a high selectivity hard mask
03/28/2013US20130075689 Stackable non-volatile resistive switching memory device and method
03/28/2013US20130075688 Semiconductor Memory Device and Manufacturing Method Thereof
03/28/2013US20130075687 Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device
03/28/2013US20130075686 Variable resistance memory
03/28/2013US20130075685 Methods and apparatus for including an air gap in carbon-based memory devices
03/28/2013US20130075684 Non-volatile memory device
03/28/2013US20130075683 Integrated nonvolatile resistive memory elements
03/28/2013US20130075682 Phase change random access memory and method for manufacturing the same
03/27/2013CN103003971A Memory cell with resistance-switching layers including breakdown layer
03/27/2013CN103000807A Titanium-antimony-tellurium phase-changing material depositing method and preparation method of phase-changing storage unit
03/27/2013CN103000806A Resistance change nonvolatile memory device, semiconductor device, and method of operating resistance change nonvolatile memory device
03/27/2013CN103000653A Nonvolatile semicocductor memory device and manufacturing method thereof
03/27/2013CN103000515A Semiconductor device and manufacturing method thereof
03/27/2013CN102142518B Phase-change storage material and preparation method thereof
03/21/2013WO2013038647A1 Non-volatile storage element, non-volatile storage device, production method for non-volatile storage element, and production method for non-volatile storage device
03/21/2013WO2013038641A1 Method for manufacturing non-volatile memory element, and non-volatile memory element
03/21/2013WO2013037720A1 Methods for producing and preprogramming a non-volatile resistive phase-change memory
03/21/2013WO2013037195A1 Large-capacity multi-value resistive random access memory
03/21/2013US20130071984 Atomic layer deposition of hafnium and zirconium oxides for memory applications
03/21/2013US20130071982 Nonvolatile Memory Elements with Metal-Deficient Resistive-Switching Metal Oxides
03/21/2013US20130070514 Integrated circuit with on-die distributed programmable passive variable resistance fuse array and method of making same
03/21/2013US20130069031 Multilevel resistive memory having large storage capacity
03/21/2013US20130069030 Resistive memory cell including integrated select device and storage element
03/21/2013US20130069028 Select devices for memory cell applications
03/20/2013CN102986048A Memory cell with resistance-switching layers and lateral arrangement
03/20/2013CN102983273A Sidewall structured switchable resistor cell
03/20/2013CN102978588A Method for preparing titanium-stibium-tellurium (Ti-Sb-Te) phase change material and method for preparing phase change storage unit
03/20/2013CN101589469B Method for forming chalcogenide film and method for manufacturing recording element
03/14/2013WO2013035695A1 Cu-te-alloy-based sintered body sputtering target
03/14/2013US20130064002 Resistance change nonvolatile memory device, semiconductor device, and method of operating resistance change nonvolatile memory device
03/14/2013US20130062590 Method for manufacturing nonvolatile storage device and nonvolatile storage device
03/14/2013US20130062589 Resistance change memory
03/14/2013US20130062588 Nonvolatile semicocductor memory device and manufacturing method thereof
03/13/2013CN102969328A Crossed array structure of resistive random access memory and manufacture method thereof
03/13/2013CN102157686B Memorizer with surface impedance state varying with electric domain and manufacturing method thereof
03/13/2013CN101237029B Memory device
03/12/2013US8396335 Solid-state memory and semiconductor device
03/12/2013US8395140 Cross-point memory utilizing Ru/Si diode
03/12/2013US8394670 Vertical diodes for non-volatile memory device
03/12/2013US8394669 Resistance variable element and resistance variable memory device
03/07/2013WO2013032855A2 Method for forming resistive switching memory elements
03/07/2013US20130058158 Method, system, and device for l-shaped memory component
03/07/2013US20130056702 Atomic layer deposition of metal oxide materials for memory applications
03/07/2013US20130056701 Nonvolatile memory element, and nonvolatile memory device
03/07/2013US20130056700 Defect gradient to boost nonvolatile memory performance
03/07/2013US20130056699 Phase change memory cell having vertical channel access transistor
03/07/2013US20130056698 Resistive memory device having vertical transistors and method for making the same
03/06/2013CN102959750A Ionically controlled three-gate component
03/06/2013CN102959635A Semiconductor storage device
03/06/2013CN102956822A Nonvolatile memory elements and memory devices including same
03/06/2013CN102956821A Phase change memory and method of fabricating same
03/06/2013CN102956820A Formation method of phase transition storage
03/06/2013CN102956819A Forming method of phase change memory
03/06/2013CN102956818A Manufacturing method of phase change random access memory
03/06/2013CN102956817A Manufacturing method of phase change random access memory
03/06/2013CN102306655B Three-dimensional storage device array structure and manufacturing method thereof
03/06/2013CN101809775B Chalcogenide film and method for producing the same
03/05/2013US8391050 Resistance change element, semiconductor memory device, manufacturing method and driving method thereof
03/05/2013US8389973 Memory using tunneling field effect transistors
03/05/2013US8389970 Diode and storage layer semiconductor memory device
02/2013
02/28/2013WO2013027682A1 Method for forming ge-sb-te film, method for forming ge-te film, method for forming sb-te film, and program
02/28/2013US20130051136 Methods, apparatuses, and circuits for programming a memory device
02/28/2013US20130051121 Switchable two-terminal devices with diffusion/drift species
02/28/2013US20130051116 Integrated circuit with face-to-face bonded passive variable resistance memory and method for making the same
02/28/2013US20130051115 Integrated circuit with backside passive variable resistance memory and method for making the same
02/28/2013US20130048938 Phase change memory device
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