| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 05/22/2013 | CN103119717A Method for manufacturing non-volatile memory element, and non-volatile memory element |
| 05/22/2013 | CN103119716A Memory element, semiconductor storage device, method of manufacturing memory element, and method of reading from semiconductor storage device |
| 05/22/2013 | CN103117359A High-reliability nonvolatile memory and preparation method thereof |
| 05/22/2013 | CN103117358A Semiconductor memory device having cell patterns on interconnection and fabrication method thereof |
| 05/22/2013 | CN102185106B 相变存储材料及其制备方法 Phase change memory material and method |
| 05/22/2013 | CN101984512B Composite phase change storage material and method for preparing composite phase change storage material film |
| 05/22/2013 | CN101783390B Memory cell having improved mechanical stability and manufacturing method thereof |
| 05/21/2013 | US8445888 Resistive random access memory using rare earth scandate thin film as storage medium |
| 05/21/2013 | US8445887 Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same |
| 05/16/2013 | WO2013070307A1 Composition of memory cell with resistance-switching layers |
| 05/16/2013 | US20130122651 Manufacturing method of non-volatile memory device |
| 05/16/2013 | US20130121063 Memory device, semiconductor storage device, method for manufacturing memory device, and reading method for semiconductor storage device |
| 05/16/2013 | US20130121060 Non-volatile memory elements and memory devices including the same |
| 05/16/2013 | US20130119344 Nonvolatile storage element and method for manufacturing same |
| 05/16/2013 | US20130119343 Resistive random access memory and method for fabricating the same |
| 05/16/2013 | US20130119342 Method for manufacturing semiconductor memory device and semiconductor memory device |
| 05/16/2013 | US20130119341 Resistive random access memory cell and memory |
| 05/16/2013 | US20130119340 Multi-bit resistive-switching memory cell and array |
| 05/16/2013 | US20130119339 Memory cell with post deposition method for regrowth of crystalline phase change material |
| 05/16/2013 | US20130119338 Resistance-switching memory cells adapted for use at low voltage |
| 05/16/2013 | US20130119337 Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation |
| 05/16/2013 | US20130119336 Forced Ion Migration for Chalcogenide Phase Change Memory Device |
| 05/15/2013 | EP2591514A1 Ionically controlled three-gate component |
| 05/15/2013 | CN103107283A Nonvolatile memory element and memory device including the same |
| 05/15/2013 | CN103106919A Multistage resistance conversion storage device |
| 05/10/2013 | WO2013066496A1 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
| 05/10/2013 | WO2013064021A1 Method for manufacturing resistive random access storage unit |
| 05/09/2013 | US20130112936 Resistance change element and manufacturing method therefor |
| 05/09/2013 | US20130112935 Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same |
| 05/09/2013 | US20130112934 Nanoscale switching device |
| 05/09/2013 | US20130112933 Germanium antimony telluride materials and devices incorporating same |
| 05/08/2013 | CN103098252A Current control element and nonvolatile memory element using same |
| 05/08/2013 | CN103094477A Zirconium oxide resistance memorizer film preparation method and test method of resistance change property of zirconium oxide resistance memorizer film |
| 05/08/2013 | CN103094476A Undamaged etching method of phase change alloy materials |
| 05/08/2013 | CN103094475A Memory device and manufacturing method thereof |
| 05/08/2013 | CN103094474A Manufacturing method of tungsten oxide through holes |
| 05/08/2013 | CN103094473A Preparation method of tungsten oxide resistive random access memory |
| 05/08/2013 | CN103094472A Manufacturing method of resistor type random access memory unit |
| 05/08/2013 | CN103094471A Nonvolatile storing device capable of reducing storage node and manufacturing method thereof |
| 05/08/2013 | CN103094302A Memory device including three-dimensional selection structure used for memory cell array |
| 05/08/2013 | CN103094301A Metal oxide resistive random access memory (RRAM) and manufacturing method thereof |
| 05/08/2013 | CN102136547B Programmable metallization cell with iron buffer layers |
| 05/08/2013 | CN101728480B Resistance type random access memory structure and manufacturing method thereof |
| 05/02/2013 | WO2013061559A1 Nonvolatile storage cell and nonvolatile storage device |
| 05/02/2013 | WO2013060034A1 Storage material based on silicon doped bismuth-tellurium for phase-changing storage devices and preparation method therefor |
| 05/02/2013 | US20130109150 Systems and methods for fabricating self-aligned memory cell |
| 05/02/2013 | US20130109149 Methods for Forming Resistive-Switching Metal Oxides for Nonvolatile Memory Elements |
| 05/02/2013 | US20130105759 Stressed phase change materials |
| 05/02/2013 | US20130105758 Memory cell of resistive random access memory and manufacturing method thereof |
| 05/02/2013 | US20130105757 Phase change memory devices and methods of manufacturing the same |
| 05/02/2013 | US20130105755 Methods of forming semiconductor device structures, and related structures |
| 05/01/2013 | CN103081017A Drive method for memory element and storage device using memory element |
| 05/01/2013 | CN103081016A Drive method for memory element, and storage device using memory element |
| 05/01/2013 | CN103078055A Unit, device and method for simulating biological neuronal synapsis |
| 05/01/2013 | CN103078054A Unit, device and method for simulating biological neuron and neuronal synapsis |
| 05/01/2013 | CN103078053A Multi-value resistive random access memory (RRAM) and manufacturing method thereof |
| 05/01/2013 | CN102254803B Method for manufacturing resistive type memory |
| 05/01/2013 | CN102130298B Si-Sb-Te phase change material for phase change storage |
| 04/30/2013 | US8431922 Lateral phase change memory |
| 04/30/2013 | US8431919 Resistive change non-volatile semiconductor memory device |
| 04/25/2013 | WO2013058853A1 Non-volatile memory cell comprising metal oxide resistive memory element and an antifuse layer |
| 04/25/2013 | WO2013058044A1 Strongly correlated non-volatile memory device |
| 04/25/2013 | WO2013057920A1 Non-volatile storage element and method for manufacturing same |
| 04/25/2013 | WO2013057912A1 Non-volatile storage element, non-volatile storage device, and method for writing into non-volatile storage element |
| 04/25/2013 | WO2013017131A3 Integrated non-volatile memory elements, design and use |
| 04/25/2013 | US20130099193 Phase Change Memory and Manufacturing Method Therefor |
| 04/25/2013 | US20130099192 Electronic Devices, Memory Devices and Memory Arrays |
| 04/25/2013 | US20130099191 Resistive switching memory elements having improved switching characteristics |
| 04/25/2013 | US20130099190 Non-volatile memory device and method of fabricating the same |
| 04/25/2013 | US20130099189 Resistive memory and methods of processing resistive memory |
| 04/25/2013 | US20130099187 Multilayer structure based on a negative differential resistance material |
| 04/24/2013 | EP2583324A1 Memory cell with resistance-switching layers including breakdown layer |
| 04/24/2013 | EP2583323A2 Composition of memory cell with resistance-switching layers |
| 04/24/2013 | EP2583322A2 Memory cell with resistance- switching layers and lateral arrangement |
| 04/24/2013 | CN103069603A Phase change memory cell in semiconductor chip and method for fabricating the phase change memory cell |
| 04/24/2013 | CN103066207A Resistive random access memory and preparation method thereof |
| 04/24/2013 | CN103066206A Resistance changing type memory cell and formation method thereof |
| 04/24/2013 | CN103066205A Resistive random access memory preparation method |
| 04/24/2013 | CN103066204A Methods of manufacturing phase-change memory device and semiconductor device |
| 04/24/2013 | CN103066203A Phase-change memory device having multi-level cell and method of manufacturing the same |
| 04/24/2013 | CN103066202A Phase change memory and manufacturing method thereof |
| 04/24/2013 | CN103065679A Electric field write-in and resistance readout solid-state storage component, storer and read-write method of storer |
| 04/24/2013 | CN102157685B Phase-change storage material and manufacture method thereof |
| 04/24/2013 | CN102047422B Method of driving resistance-change element, and non-volatile memory device |
| 04/24/2013 | CN101743649B Non-volatile memory device |
| 04/23/2013 | US8426839 Conducting bridge random access memory (CBRAM) device structures |
| 04/18/2013 | WO2013054515A1 Non-volatile semiconductor storage device and method of manufacture thereof |
| 04/18/2013 | WO2013054506A1 Method of manufacturing semiconductor storage element |
| 04/18/2013 | US20130095634 Variable resistance nonvolatile storage device and method for manufacturing the same |
| 04/18/2013 | US20130094280 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating |
| 04/18/2013 | US20130094279 Semiconductor device |
| 04/18/2013 | US20130094278 Non-Volatile Memory Cell Containing an In-Cell Resistor |
| 04/18/2013 | US20130092893 Nonvolatile memory element and method for manufacturing same |
| 04/17/2013 | EP2392037B1 Programmable metallization memory cell with layered solid electrolyte structure |
| 04/17/2013 | CN103050624A Ga-Ge-Sb-Te film material used for phase change memory |
| 04/17/2013 | CN103050623A Second-order memristor with multi-resistance state characteristic and modulation method thereof |
| 04/17/2013 | CN103050622A Memristor based on argentum-indium-antimony-tellurium (AgInSbTe) sulfur compounds and preparation method thereof |
| 04/17/2013 | CN103050621A Phase-change material for phase-change memory |
| 04/17/2013 | CN103050620A Phase-change material for phase-change memory |
| 04/17/2013 | CN102237492B Formation method for phase-change memory unit |