Patents
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
06/2013
06/27/2013DE102011056951A1 Thermochromes Einzel- und Mehrkomponentensystem, dessen Herstellung und Verwendung Thermochromic single and multi-component system, its preparation and use
06/26/2013CN103180948A Non-volatile storage element, non-volatile storage device, and method for writing into non-volatile storage element
06/26/2013CN103178208A Nano particle thin film with resistance variation storage characteristics and preparation method thereof
06/26/2013CN103178207A Memristor
06/26/2013CN102299107B Method for manufacturing bottom electrode of memory cell of phase change memory
06/20/2013WO2013086686A1 Preparation method of high-speed low-power-consumption phase change memory
06/20/2013US20130157434 Phase change memory apparatus and fabrication method thereof
06/20/2013US20130155766 Phase change memory devices, method for encoding, and methods for storing data
06/20/2013US20130153854 Diamond type quad-resistor cells of pram
06/20/2013US20130153853 Horizontally oriented and vertically stacked memory cells
06/20/2013US20130153852 Variable resistance memory devices and methods of forming the same
06/20/2013US20130153850 Nonvolatile memory device and method for manufacturing the same
06/20/2013US20130153849 Non-volatile memory with resistive access component
06/20/2013US20130153847 Resistive memory device and method of manufacturing the same
06/20/2013US20130153846 Three dimensional memory array adjacent to trench sidewalls
06/20/2013US20130153845 Nonvolatile resistive memory element with a metal nitride containing switching layer
06/19/2013CN103168372A Composition of memory cell with resistance-switching layers
06/19/2013CN103168359A Non-volatile storage element, non-volatile storage device, and method for manufacturing same
06/19/2013CN103165812A Manufacturing method for tungsten oxide resistive random access memory
06/19/2013CN103165662A Resistive memory device and method of manufacturing the same
06/19/2013CN103165638A Stack type semiconductor memory device
06/19/2013CN102255044B Nanosecond reversible phase transformation material and method for measuring phase transformation mechanism of same
06/19/2013CN102244196B Sequential controllable nanometer silicon quantum dot array resistive random access memory and preparation method thereof
06/19/2013CN102194993B Method for manufacturing memory cell of phase-change memory
06/19/2013CN102122636B Preparation method of three-dimensional resistance conversion memory chip
06/18/2013US8467224 Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
06/18/2013US8466445 Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof
06/18/2013US8466032 Systems and methods for fabricating self-aligned memory cell
06/13/2013US20130149834 Methods Of Forming Memory Cells, And Methods Of Patterning Chalcogenide-Containing Stacks
06/13/2013US20130149815 Nonvolatile memory element manufacturing method and nonvolatile memory element
06/13/2013US20130148409 Circuit and system of using finfet for building programmable resistive devices
06/13/2013US20130148399 Semiconductor memory device
06/13/2013US20130146833 Memory cells having a plurality of heaters
06/13/2013US20130146832 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
06/13/2013US20130146831 Phase-change memory device having multiple diodes
06/13/2013US20130146830 Semiconductor Devices and Methods of Manufacturing the Same
06/12/2013CN103151459A Hafnium-oxynitride-based low-power consumption resistive random access memory and preparation method for same
06/12/2013CN103151458A Embedded phase change memory array and manufacturing method
06/12/2013CN103151366A Phase change memory array and manufacture method of phase change memory array
06/12/2013CN102237491B Manganese oxide base resistance memory containing silicon doping and preparation method thereof
06/12/2013CN102237309B Method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process
06/06/2013WO2013080496A1 Crosspoint-type variable-resistance non-volatile storage device
06/06/2013WO2013080452A1 Non-volatile storage element and non-volatile storage device
06/06/2013WO2013078791A1 Memory device, memory array and manufacturing method thereof
06/06/2013US20130143382 Method of forming memory device
06/06/2013US20130143380 Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same
06/06/2013US20130140703 Contact structure in a memory device
06/06/2013US20130140515 Nonvolatile memory element and method of manufacturing the same
06/06/2013US20130140514 Nonvolatile memory device and method of manufacturing the same
06/06/2013US20130140511 Resistive-switching memory element
06/05/2013CN202977532U Memristor based on Ge2Se2Te5
06/05/2013CN103137864A Semiconductor device and method of fabricating the same
06/05/2013CN103137863A Phase-change random access memory device and method of manufacturing the same
06/05/2013CN103137862A 存储器装置及其制造方法 A memory device and manufacturing method thereof
06/05/2013CN103137861A Storage device and storage array and manufacturing method thereof
06/05/2013CN103137860A Nonvolatile three-dimensional semiconductor memory device and preparing method
06/05/2013CN103137646A Strobing device unit used for cross array integration way of double-pole type resistance change storage
06/05/2013CN103137645A Semiconductor memory device having three-dimensionally arranged resistive memory cells
06/05/2013CN103137470A Semiconductor device and manufacturing method thereof
06/05/2013CN103132050A Tellurium (te) precursors for making phase change memory materials
06/04/2013US8456891 Nonvolatile memory cells having oxygen diffusion barrier layers therein
06/04/2013US8455855 Memory cell having dielectric memory element
05/2013
05/30/2013WO2013075416A1 Resistance random access memory unit
05/30/2013WO2010022036A3 Method for forming self-aligned phase-change semiconductor diode memory
05/30/2013US20130134383 Non-volatile memory device and method of manufacturing the same
05/30/2013US20130134382 Selector Device for Memory Applications
05/30/2013US20130134381 Semiconductor device and manufacturing method thereof
05/30/2013US20130134380 Upwardly tapering heaters for phase change memories
05/30/2013US20130134379 Resistive memory using sige material
05/30/2013US20130134378 Variable-resistance material memories and methods
05/30/2013US20130134376 Atomic layer deposition of zirconium oxide for forming resistive-switching materials
05/30/2013US20130134374 Variable resistor, non-volatile memory device using the same, and methods of fabricating the same
05/30/2013US20130134373 Nonvolatile resistive memory element with a novel switching layer
05/30/2013US20130134372 Semiconductor device and method of manufacturing the same
05/30/2013US20130134371 Phase-change random access memory device and method of manufacturing the same
05/29/2013CN103124806A Method for forming Ge-Sb-Te film and storage medium
05/29/2013CN101958335B Phase change random access memory and manufacturing method and programming method thereof
05/28/2013US8450716 Resistive memory
05/28/2013US8450715 Nonvolatile metal oxide memory element and nonvolatile memory device
05/28/2013US8450714 Semiconductor memory device including variable resistance element or phase-change element
05/28/2013US8450713 Nonvolatile semiconductor memory device and manufacturing method for same
05/23/2013WO2013073187A1 Variable resistance nonvolatile storage device and method for manufacturing same
05/23/2013US20130130470 Nonvolatile memory element and production method thereof and storage memory arrangement
05/23/2013US20130130467 Resist feature and removable spacer pitch doubling patterning method for pillar structures
05/23/2013US20130130466 Methods of Forming Electrical Components and Memory Cells
05/23/2013US20130130464 Plasma processing of metal oxide films for resistive memory device applications
05/23/2013US20130128654 Nonvolatile memory element, method of manufacturing nonvolatile memory element, method of initial breakdown of nonvolatile memory element, and nonvolatile memory device
05/23/2013US20130128653 Resistive radom access memory device, method for manufacturing the same, and method for operating the same
05/23/2013US20130128651 Nonvolatile memory device
05/23/2013US20130128649 Memory cells, semiconductor devices including such cells, and methods of fabrication
05/23/2013US20130126822 Method Arrays and Methods of Forming Memory Cells
05/23/2013US20130126821 Bottom electrodes for use with metal oxide resistivity switching layers
05/23/2013US20130126820 Variable and reversible resistive memory storage element and memory storage module having the same
05/23/2013US20130126819 Memory device having vertical selection transistors with shared channel structure and method for making the same
05/23/2013US20130126818 Resistive random access memory (rram) using stacked dielectrics and method for manufacturing the same
05/23/2013US20130126816 Memory Arrays and Methods of Forming Memory Cells
05/23/2013US20130126815 Semiconductor device and method of fabricating the same
05/23/2013US20130126814 Semiconductor devices having multi-width isolation layer structures
05/23/2013US20130126813 Method of fabricating a microelectronic device with programmable memory
05/23/2013US20130126812 Memory Cells, Integrated Devices, and Methods of Forming Memory Cells
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