Patents
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
08/2013
08/06/2013US8502183 Semiconductor memory device including memory cell having rectifying element and switching element
08/01/2013WO2013112291A1 Non-volatile memory cell containing a nano-rail electrode
08/01/2013WO2013111548A1 Nonvolatile storage element and method of manufacturing thereof
08/01/2013WO2013111545A1 Variable-resistance non-volatile storage device and manufacturing method thereof
08/01/2013US20130196467 Phase-change memory
08/01/2013US20130193403 Memory Arrays and Methods of Forming Memory Cells
08/01/2013US20130193401 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor
08/01/2013US20130193400 Memory Cell Structures and Memory Arrays
08/01/2013US20130193397 High Consistency Resistive Memory and Manufacturing Method Thereof
08/01/2013US20130193396 Variable resistive element, and non-volatile semiconductor memory device
08/01/2013DE102013001298A1 3D-Halbleiteranordnung für Halbleiterspeicher 3D semiconductor device for the semiconductor memory
07/2013
07/31/2013CN103229299A Nonvolatile memory element, production method therefor, nonvolatile memory unit, and design assistance method for nonvolatile memory element
07/31/2013CN103227284A High-consistency high-speed resistive random access memory (RRAM) and producing method thereof
07/31/2013CN103227283A Self-rectification RRAM based on TaOx and preparation method of RRAM
07/31/2013CN103227282A Variable resistive element, and non-volatile semiconductor memory device
07/31/2013CN103227151A A semiconductor device with an embedded gate electrode and a method for fabricating the same
07/31/2013CN102487119B Sb2Tex-SiO2 nano composite phase change material used on phase change memory and preparation method of Sb2Tex-SiO2 nano composite phase change material
07/31/2013CN102185107B Resistance-type random storage component and preparation method thereof
07/25/2013WO2013109954A2 Nonvolatile memory device using a tunnel oxide as a passive current steering element
07/25/2013WO2013108593A1 Method of manufacturing resistance-change type non-volatile storage device and resistance-change type non-volatile storage device
07/25/2013WO2013108508A1 Manganese oxide thin film and oxide laminate
07/25/2013WO2013108507A1 Manganese oxide thin film and oxide laminate
07/25/2013US20130189824 Voltage sensitive resistor (vsr) read only memory
07/25/2013US20130187119 Semiconductor Memory Devices Having Strapping Contacts
07/25/2013US20130187118 Memory device
07/25/2013US20130187117 Memory Cells and Methods of Forming Memory Cells
07/25/2013US20130187116 RRAM Device With Free-Forming Conductive Filament(s), and Methods of Making Same
07/25/2013US20130187115 Programmable metallization memory cells via selective channel forming
07/25/2013US20130187114 Non-Volatile Memory Cell Containing a Nano-Rail Electrode
07/25/2013US20130187113 Nonvolatile Memory Device Comprising a Metal-to-Insulator Transition Material
07/25/2013US20130187112 Non-volatile memory device and method of manufacturing the same
07/25/2013US20130187111 Memory Cells
07/25/2013US20130187110 Nonvolatile memory device using a tunnel oxide as a current limiter element
07/24/2013EP2618393A2 Memory device based on conductance switching in polymer/electrolyte junctions
07/24/2013EP2617077A1 Nanoscale switching device
07/24/2013CN103222055A Nonvolatile storage element and method for manufacturing same
07/24/2013CN103219462A Preparation method of phase change memory with annular vertical structure
07/24/2013CN102132407B Storage element and storage device
07/24/2013CN101855724B Chalcogenide film and method for producing the same
07/24/2013CN101796588B 3d r/w cell with reduced reverse leakage and method of making thereof
07/18/2013US20130181183 Resistive memory cell structures and methods
07/18/2013US20130181182 Phase-change memory cell
07/18/2013US20130181181 Miiim diode having lanthanum oxide
07/18/2013US20130181180 Semiconductor device
07/17/2013EP2615612A1 Phase transition memory cell
07/17/2013CN103210491A Method for manufacturing nonvolatile storage device
07/17/2013CN103208481A Semiconductor memory device, memory chip, memory module, memory system and method for fabricating the same
07/17/2013CN102447057B Method for manufacturing bottom electrode of phase change memory
07/17/2013CN102412179B Preparation method for epitaxial diode array isolated by double shallow trenches
07/17/2013CN102376882B Ring electrode and forming method
07/17/2013CN102376878B Manufacture method for bottom electrode of phase change memory
07/17/2013CN102255043B Method for improving resistive storage performance of strontium titanate stannate thin film
07/17/2013CN102130145B Phase change storage and manufacturing method thereof
07/17/2013CN102097374B Phase change random access memory and manufacturing method thereof
07/16/2013US8487294 Nanostructure quick-switch memristor and method of manufacturing the same
07/16/2013US8487293 Bipolar switching memory cell with built-in “on ”state rectifying current-voltage characteristics
07/16/2013US8487289 Electrically actuated device
07/16/2013US8487288 Memory device incorporating a resistance variable chalcogenide element
07/16/2013US8486745 Multi-terminal phase change devices
07/11/2013WO2013103122A1 Switching element and manufacturing method thereof
07/11/2013WO2013073993A3 Memristor based on a mixed metal oxide
07/11/2013US20130178042 Method for manufacturing variable resistance element
07/11/2013US20130175497 Device structure for long endurance memristors
07/11/2013US20130175495 Integrated Circuitry, Methods of Forming Memory Cells, and Methods of Patterning Platinum-Containing Material
07/11/2013US20130175493 Phase change memory structure having low-k dielectric heat-insulating material and fabrication method thereof
07/11/2013US20130175492 Memory cells having storage elements that share material layers with steering elements and methods of forming the same
07/11/2013US20130175491 Semiconductor devices and methods of manufacturing the same
07/10/2013CN103199195A Bipolar resistive access memory and preparation method thereof
07/10/2013CN103199194A Multi-resistance resistive random access memory
07/10/2013CN103199193A Resistive random access memory device
07/10/2013CN102239558B Nonvolatile memory element and manufacturing method therefor
07/10/2013CN102185102B Resistance memory device with luminescence characteristics, and operating method and application thereof
07/10/2013CN102169958B Nanocomposite phase-change material, preparation method and application thereof in phase-change memory
07/10/2013CN102130297B Resistive random access memory based on P/N type oxide laminated structure and preparation method thereof
07/10/2013CN101794860B Conductive bridging random access memory element and manufacturing method thereof
07/09/2013US8482973 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
07/04/2013WO2013101499A2 Low forming voltage non-volatile storage device
07/04/2013US20130171799 Current steering element and non-volatile memory element incorporating current steering element
07/04/2013US20130170291 Variable resistance memory with lattice array using enclosing transistors
07/04/2013US20130170282 Variable resistance memory device
07/04/2013US20130170281 Variable resistance memory device and method for fabricating the same
07/04/2013US20130170278 Resistive random access memory cell and resistive random access memory module
07/04/2013US20130168634 Resistive random access memory device
07/04/2013US20130168633 Semiconductor device and manufacturing method thereof
07/04/2013US20130168632 Resistance variable memory device and method for fabricating the same
07/04/2013US20130168630 Memory Structures and Arrays, and Methods of Forming Memory Structures and Arrays
07/04/2013US20130168629 Nanoscale switching device
07/04/2013US20130168628 Variable resistance memory device and method for fabricating the same
07/03/2013CN103187527A Ce-doped Bi4-xCexTi3O12 electro-resistance changing film and preparation method of resistance changing capacitor
07/03/2013CN103187526A Variable resistance memory device and method for fabricating the same
07/03/2013CN103187525A Phase change resistor in phase change memory and forming method thereof
07/03/2013CN103187524A Forming method of phase change resistor in phase change memory
07/03/2013CN103187523A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/03/2013CN103187328A Detection method of CMP terminal and formation method of phase change memory bottom contact structure
06/2013
06/27/2013WO2013094169A1 Non-volatile storage device and manufacturing method thereof
06/27/2013WO2013093180A1 Electron tunneling apparatus and associated methods
06/27/2013WO2013093110A1 Thermochromic single-layer and multi-layer system, and the manufacture and use thereof
06/27/2013US20130163323 Semiconductor memory device using variable resistance element or phase-change element as memory device
06/27/2013US20130163310 Resistive memory
06/27/2013US20130161583 Stacked RRAM Array With Integrated Transistor Selector
1 ... 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 ... 85