Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
09/2013
09/11/2013CN102522418B Self-rectifying resistance random access memory with cross array structure and preparation method
09/05/2013US20130230962 Methods for forming nickel oxide films for use with resistive switching memory devices/us
09/05/2013US20130228739 Nonvolatile memory device and method for manufacturing same
09/05/2013US20130228738 Large array of upward pointing p-i-n diodes having large and uniform current
09/05/2013US20130228737 Nonvolatile semiconductor memory device and method of manufacturing same
09/05/2013US20130228736 Memory device
09/05/2013US20130228735 Interfacial oxide used as switching layer in a nonvolatile resistive memory element
09/05/2013US20130228734 Programmable resistive memory cell with sacrificial metal
09/04/2013CN103280526A Memory resisting layer and memory resistor
09/04/2013CN103280525A Transparent resistance random access memory and manufacturing method thereof
09/04/2013CN102468437B Manufacture method of phase change memory
09/04/2013CN101192648B Resistive random access memory and method of manufacturing the same
09/03/2013US8525143 Method and system of using nanotube fabrics as joule heating elements for memories and other applications
08/2013
08/29/2013US20130224931 Nonvolatile memory device manufacturing method
08/29/2013US20130224930 Method for manufacturing variable resistance element
08/29/2013US20130224929 Method of forming a contact and method of manufacturing a phase change memory device using the same
08/29/2013US20130224908 Method of manufacturing pram using laser interference lithography
08/29/2013US20130224888 Systems and methods for fabricating self-aligned resistive/magnetic memory cell
08/29/2013US20130223124 Variable resistive memory device and method of fabricating and driving the same
08/29/2013US20130221318 Memory Cells and Memory Cell Arrays
08/29/2013US20130221316 Front to back resistive random access memory cells
08/29/2013US20130221315 Memory Cell Having an Integrated Two-Terminal Current Limiting Resistor
08/29/2013US20130221314 Memory Device Having An Integrated Two-Terminal Current Limiting Resistor
08/29/2013US20130221313 Ultra high density resistive memory structure and method for fabricating the same
08/29/2013US20130221312 SEMICONDUCTOR STRUCTURES COMPRISING CRYSTALLINE PrCaMnO (PCMO) FORMED BY ATOMIC LAYER DEPOSITION
08/29/2013US20130221311 Trap passivation in memory cell with metal oxide switching element
08/29/2013US20130221310 Semiconductor memory device and manufacturing method of the same
08/29/2013US20130221309 Variable resistive memory device and method of fabricating the same
08/29/2013US20130221308 Compact rram device and methods of making same
08/29/2013US20130221307 Nonvolatile resistive memory element with an integrated oxygen isolation structure
08/29/2013US20130221306 Variable resistive memory device
08/29/2013DE112011101925T5 Integration eines Phasenwechselspeicherprozesses mit einer Maske Integration of a phase change memory process with a mask
08/28/2013CN103270592A Nonvolatile storage cell and nonvolatile storage device
08/28/2013CN103268917A Al-W-O piling structure applied to resistive random access memory
08/28/2013CN102097587B Memory device having wide area phase change element and small electrode contact area
08/22/2013US20130217201 Memory Element and Semiconductor Device, and Method for Manufacturing the Same
08/22/2013US20130217200 Resistive-Switching Nonvolatile Memory Elements
08/22/2013US20130217193 Method for fabricating semiconductor device
08/22/2013US20130217179 Nonvolatile Memory Device Having An Electrode Interface Coupling Region
08/22/2013US20130214240 Memory Device with a Textured Lowered Electrode
08/22/2013US20130214239 Method for manufactoring a carbon-based memory element and memory element
08/22/2013US20130214238 Method for Forming Metal Oxides and Silicides in a Memory Device
08/22/2013US20130214236 USING TiON AS ELECTRODES AND SWITCHING LAYERS IN ReRAM DEVICES
08/22/2013US20130214235 Resistive memory having rectifying characteristics or an ohmic contact layer
08/22/2013US20130214234 Resistive Switching Devices and Methods of Formation Thereof
08/22/2013US20130214233 Conductive metal oxide structures in non volatile re writable memory devices
08/22/2013US20130214232 Nonvolatile memory device using a varistor as a current limiter element
08/22/2013US20130214231 In-situ nitride initiation layer for rram metal oxide switching material
08/22/2013US20130214230 Memory structures, memory arrays, methods of forming memory structures and methods of forming memory arrays
08/21/2013EP2628181A1 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
08/21/2013CN1819297B Side wall active pin memory and manufacturing method
08/21/2013CN103262240A Non-volatile storage element and manufacturing method thereof
08/21/2013CN103258953A Method for forming of lower electrode layer in resistive random access memory
08/21/2013CN103258569A Multilayered phase change memory
08/21/2013CN102237390B Semiconductor device and method of manufacturing same
08/21/2013CN101853921B Reversible resistivity-switching metal oxide or nitride layer with added metal
08/20/2013US8513636 Vertical diodes for non-volatile memory device
08/20/2013US8513635 Switching device and memory device including the same
08/15/2013US20130210217 Precursors for GST Films in ALD/CVD Processes
08/15/2013US20130210211 Vertical Cross-Point Memory Arrays
08/15/2013US20130208532 Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems
08/15/2013US20130207105 Controlled Localized Defect Paths for Resistive Memories
08/15/2013US20130207066 Planar resistive memory integration
08/14/2013EP2626902A1 Nonvolatile storage element and method for manufacturing same
08/14/2013CN103250253A Non-volatile semiconductor storage device and method of manufacture thereof
08/14/2013CN103250252A Nonvolatile storage element and nonvolatile storage device
08/14/2013CN103247758A Erasable film variable-resistance memory unit adopting flexible paper base and preparation method thereof
08/14/2013CN103247757A Zn (zinc)-Sb (stibium)-Te (tellurium) phase change storage thin-film material for phase change memory and preparation method of Zn-Sb-Te phase change storage thin-film material
08/14/2013CN103247756A Memristor and manufacture method thereof
08/14/2013CN103247755A Method for reducing Reset current of RRAM (resistive random access memory) device
08/14/2013CN103247654A NVM (nonvolatile memory) component and array thereof
08/14/2013CN103247653A Three-dimensional storage array for connecting adjacent channel walls and manufacturing method thereof
08/14/2013CN102412367B Fabrication method of bottom electrode of phase change memory (PCM)
08/14/2013CN102332530B Memory cell with spacer heating electrode and phase change material and preparation method
08/14/2013CN102117882B Method for reducing operation power consumption of phase change memory unit
08/14/2013CN101507009B Programmable resistance memory devices and systems using the same and methods of forming the same
08/13/2013US8508980 Polarity dependent switch for resistive sense memory
08/13/2013US8508976 Nonvolatile memory element and nonvolatile memory device
08/13/2013US8508021 Phase-change memory device and method of fabricating the same
08/13/2013US8507888 Nonvolatile memory device and method for manufacturing same
08/08/2013US20130203227 Method for manufacturing three-dimensional semiconductor memory device
08/08/2013US20130201747 Permanent solid state memory using carbon-based or metallic fuses
08/08/2013US20130200331 Semiconductor storage device and method of manufacturing the same
08/08/2013US20130200329 Memory cell device and method of manufacture
08/08/2013US20130200328 Phase change memory devices
08/08/2013US20130200327 Resistive Memory Arrangement and a Method of Forming the Same
08/08/2013US20130200326 Nonvolatile memory cell and nonvolatile memory device including the same
08/08/2013US20130200325 Nonvolatile Memory Device Using A Tunnel Nitride As A Current Limiter Element
08/08/2013US20130200324 Transition Metal Oxide Bilayers
08/08/2013US20130200323 Multifunctional electrode
08/08/2013US20130200321 Post-fabrication self-aligned initialization of integrated devices
08/08/2013US20130200320 Self-Isolated Conductive Bridge Memory Device
08/07/2013EP2622664A1 Device structure for long endurance memristors
08/07/2013CN103238214A Crosspoint-type variable-esistance non-volatile storage device
08/07/2013CN103236499A Unipolar memristor and preparation method thereof
08/07/2013CN103236498A Nonpolar resistive random-access memory and preparation method thereof
08/07/2013CN103236497A Bismuth-titanate-based resistive random access memory and preparation method for same
08/07/2013CN103236496A Laminated three-terminal active device
08/07/2013CN103236495A Sn-Ge-Te (stannum-germanium-tellurium) film material for phase transition storages and preparation method of Sn-Ge-Te film material
08/06/2013US8502185 Switching device having a non-linear element
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