| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 10/03/2013 | US20130256625 Variable resistance memory device |
| 10/03/2013 | US20130256624 Electrodes for resistance change memory devices |
| 10/03/2013 | US20130256623 Nonvolatile memory element and method of manufacturing the same |
| 10/03/2013 | US20130256622 Storage device and storage unit |
| 10/03/2013 | US20130256621 Phase-change memory devices |
| 10/02/2013 | EP2645441A2 Method of manufacturing PZT-based ferroelectric thin film |
| 10/02/2013 | CN103337589A Quasi-one-dimensional nanometer resistive random access memory and preparation method based on chalcogen cuprous compounds |
| 10/02/2013 | CN101393965B Phase change memory device and methods of fabricating the same |
| 10/01/2013 | US8546786 Stacked multiple cell nonvolatile memory device |
| 10/01/2013 | US8546783 Semiconductor device and method of manufacturing the same |
| 10/01/2013 | US8546781 Nitrogen doped aluminum oxide resistive random access memory |
| 10/01/2013 | US8546780 Non-volatile memory device |
| 10/01/2013 | US8546778 Resistance variable memory cells and methods |
| 09/26/2013 | WO2013140768A1 Nonvolatile storage device and method for manufacturing same |
| 09/26/2013 | WO2013139162A1 Sb-te-ti phase change storage material and ti-sb2te3 phase change storage material |
| 09/26/2013 | US20130252396 Confined resistance variable memory cell structures and methods |
| 09/26/2013 | US20130252395 Resistive random access memory and method of manufacturing the same |
| 09/26/2013 | US20130252394 Preparation method for resistance switchable conductive filler for reram |
| 09/26/2013 | US20130250658 Nonvolatile memory element and nonvolatile memory device |
| 09/26/2013 | US20130250656 Resistance-variable memory device |
| 09/26/2013 | US20130249114 Semiconductor memory device and method of manufacturing the same |
| 09/26/2013 | US20130248814 Non-volatile memory device and array thereof |
| 09/26/2013 | US20130248813 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 09/26/2013 | US20130248812 Systems and methods for fabricating self-aligned memory cell |
| 09/26/2013 | US20130248811 Semiconductor device and manufacturing method thereof |
| 09/26/2013 | US20130248810 Memory elements using self-aligned phase change material layers and methods of manufacturing same |
| 09/26/2013 | US20130248809 Variable resistive element and nonvolatile semiconductor memory device |
| 09/26/2013 | US20130248808 Resistance change element and nonvolatile memory device |
| 09/26/2013 | US20130248807 Nonvolatile memory device and method for manufacturing same |
| 09/26/2013 | US20130248806 Variable resistance memory device and method for fabricating the same |
| 09/26/2013 | US20130248805 Phase-change random access memory device having multi-levels and method of manufacturing the same |
| 09/26/2013 | US20130248804 Semiconductor storage device and manufacturing method the same |
| 09/26/2013 | US20130248803 Molecular memory and method of manufacturing the same |
| 09/26/2013 | US20130248802 Variable resistive memory device and method for fabricating the same |
| 09/26/2013 | US20130248799 Variable resistance memory device and method for fabricating the same |
| 09/26/2013 | US20130248798 Variable resistance memory device and method for fabricating the same |
| 09/26/2013 | US20130248797 Memory Cells |
| 09/26/2013 | US20130248796 Nonvolatile memory device and method for manufacturing same |
| 09/26/2013 | US20130248795 Nonvolatile memory device and method for manufacturing the same |
| 09/25/2013 | CN103325942A 铁电隧道结器件 Ferroelectric tunnel junction device |
| 09/25/2013 | CN103325941A Forming method of metallic oxide layer in resistive random access memory |
| 09/25/2013 | CN103325940A Phase-change memory cell and manufacturing method thereof |
| 09/25/2013 | CN103325939A Variable resistive element and nonvolatile semiconductor memory device |
| 09/25/2013 | CN103325938A Phase-change random access memory device having multi-levels and method of manufacturing the same |
| 09/25/2013 | CN103325806A Variable resistance memory device and method for fabricating the same |
| 09/25/2013 | CN101872627B Information recording medium |
| 09/19/2013 | WO2013137262A1 Resistance change memory |
| 09/19/2013 | WO2013136798A1 Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element |
| 09/19/2013 | US20130240827 Integrated Circuitry, Switches, and Methods of Selecting Memory Cells of a Memory Device |
| 09/19/2013 | US20130240826 Resistive Memory Cells and Devices Having Asymmetrical Contacts |
| 09/19/2013 | US20130240825 Nonvolatile variable resistance element and method of manufacturing the nonvolatile variable resistance element |
| 09/19/2013 | US20130240824 Resistive memory device and fabrication method thereof |
| 09/19/2013 | US20130240823 Non-volatile memory including multilayer memory cells and method of fabricating the same |
| 09/19/2013 | US20130240822 Nonvolatile memory device and method for manufacturing the same |
| 09/19/2013 | US20130240821 Three dimensional rram device, and methods of making same |
| 09/19/2013 | US20130240820 Phase change random access memory and fabrication method of heating electrode for the same |
| 09/19/2013 | US20130240819 Memory Devices and Formation Methods |
| 09/19/2013 | US20130240818 Memory component, memory device, and method of operating memory device |
| 09/18/2013 | CN103314442A Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same |
| 09/18/2013 | CN103314410A Transistor driven 3D memory |
| 09/18/2013 | CN103311435A Resistance random access memory based on vanadium oxide/aluminum oxide laminated structure and manufacturing method thereof |
| 09/18/2013 | CN103311434A Transparent resistive random access memory and production method thereof |
| 09/18/2013 | CN103311433A Manufacturing method of resistive random access memory |
| 09/18/2013 | CN103311263A High-integration semiconductor memory device and method of manufacturing the same |
| 09/18/2013 | CN102593356B Preparation method of horizontal phase change storage irrelevant to photoetching resolution ratio |
| 09/18/2013 | CN102376876B Phase change nonvolatile memory and processing method thereof |
| 09/18/2013 | CN102315385B Method for making storage unit of phase-change random access memory |
| 09/18/2013 | CN102299106B Manufacturing method of memory cell of phase change memory |
| 09/18/2013 | CN102136487B Resistance-type RAM (Random Access Memory) memory unit based on zinc oxide material and preparation method thereof |
| 09/12/2013 | WO2013101499A3 Low forming voltage non-volatile storage device |
| 09/12/2013 | US20130237029 Non-volatile semiconductor memory device and method of manufacturing non-volatile semiconductor memory device |
| 09/12/2013 | US20130237028 Method of fabricating semiconductor memory device |
| 09/12/2013 | US20130235655 Via formation for cross-point memory |
| 09/12/2013 | US20130235654 Method, system, and device for base contact layout, such as for memory |
| 09/12/2013 | US20130234104 Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same |
| 09/12/2013 | US20130234103 Nanoscale switching device with an amorphous switching material |
| 09/12/2013 | US20130234102 Bipolar Junction Transistors, Memory Arrays, and Methods of Forming Bipolar Junction Transistors and Memory Arrays |
| 09/12/2013 | US20130234101 Non-volatile memory device and production method thereof |
| 09/12/2013 | US20130234100 Nonvolatile memory cells having phase changeable patterns therein for data storage |
| 09/12/2013 | US20130234099 Non-volatile storage with metal oxide switching element and methods for fabricating the same |
| 09/12/2013 | US20130234098 Memory Diodes |
| 09/12/2013 | US20130234097 Nonvolatile resistance change element |
| 09/12/2013 | US20130234096 Semiconductor storage device and manufacturing method the same |
| 09/12/2013 | US20130234095 Nonvolatile semiconductor storage device |
| 09/12/2013 | US20130234094 Methods and Apparatus for Resistive Random Access Memory (RRAM) |
| 09/12/2013 | US20130234092 Three dimension programmable resistive random accessed memory array with shared bitline and method |
| 09/12/2013 | US20130234091 Methods of self-aligned growth of chalcogenide memory access device |
| 09/12/2013 | US20130234090 Semiconductor device and method of manufacturing the same |
| 09/12/2013 | US20130234089 Organic molecular memories and organic molecules for organic molecular memories |
| 09/12/2013 | US20130234088 Semiconductor device |
| 09/12/2013 | US20130234087 Non-volatile resistance change device |
| 09/12/2013 | US20130234086 Semiconductor memory device |
| 09/11/2013 | CN103296205A Low power consumption resistive random access memory and manufacturing method thereof |
| 09/11/2013 | CN103296204A Pressure response memory device based on individual one-dimensional nanostructured materials and production method |
| 09/11/2013 | CN103296203A Resistive memory device and fabrication method thereof |
| 09/11/2013 | CN103296202A 相变存储器及其制作方法 Phase change memory and its production methods |
| 09/11/2013 | CN103296201A Phase change memory, bottom contact structure thereof, manufacturing method of phase change memory, and manufacturing method of bottom contact structure |
| 09/11/2013 | CN103296200A Device and circuit with programmable metallization unit and operation and manufacturing method thereof |
| 09/11/2013 | CN103296049A 相变存储器及其制造方法 The method of manufacturing a phase change memory and its |
| 09/11/2013 | CN102534479B Microcrystalline Si-SbxTe1-x composite phase change material and preparation method thereof |