Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
11/2013
11/07/2013US20130292629 Phase change memory cell and fabrication method thereof
11/07/2013US20130292628 Oxide based memory with a controlled oxygen vacancy conduction path
11/07/2013US20130292627 Resistance change memory and method of manufacturing the same
11/07/2013US20130292626 Resistive memory having confined filament formation
11/07/2013US20130292625 Memory cells having-multi-portion data storage region
11/06/2013CN102569652B Sb-Te-Ti phase-change storage material
11/06/2013CN102487123B Nanoscale non-volatile resistive random access memory unit and preparation method thereof
11/06/2013CN102110774B Method for preparing non-volatile memory array
11/05/2013US8575588 Phase change memory cell with heater and method therefor
10/2013
10/31/2013US20130288462 Tellurium compounds useful for deposition of tellurium containing materials
10/31/2013US20130288391 Variable resistance memory device and method for fabricating the same
10/31/2013US20130286728 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
10/31/2013US20130286726 Keyhole-free sloped heater for phase change memory
10/31/2013US20130286712 Bipolar switching memory cell with built-in "on" state rectifying current-voltage characteristics
10/31/2013US20130285255 Nonvolatile memory device and manufacturing method thereof
10/31/2013US20130285006 Variable resistance memory device and method of fabricating the same
10/31/2013US20130285005 Variable resistive element, method for producing the same, and nonvolatile semiconductor memory device including the variable resistive element
10/31/2013US20130285004 Solid electrolyte memory elements with electrode interface for improved performance
10/31/2013US20130285003 Phase Change Memory Cells And Methods Of Forming Phase Change Memory Cells
10/31/2013US20130285002 Phase Change Memory Cells And Methods Of Forming Phase Change Memory Cells
10/31/2013US20130285000 Semiconductor device and manufacturing method of the same
10/31/2013US20130284999 Phase change memory structure comprising phase change alloy center-filled with dielectric material
10/31/2013US20130284998 Forming heaters for phase change memories
10/30/2013EP2658004A2 Method for generating spin waves
10/30/2013CN103378290A Variable resistance memory device and method for fabricating the same
10/30/2013CN103378289A Multi-layer nanometer composite thin film material for high-speed high-density phase transition storage and method for preparing material
10/30/2013CN103378288A Method for forming phase-change memorizer
10/30/2013CN102593357B Method for preparing phase change memory with nano memory performance
10/30/2013CN102315386B Manufacturing method of phase change memory storage unit
10/30/2013CN102301425B Method of driving resistance changing element, method of initialization of same, and nonvolatile memory device
10/29/2013US8569734 Forming resistive random access memories together with fuse arrays
10/29/2013US8569729 Method and apparatus for reducing programmed volume of phase change memory
10/24/2013WO2013158242A2 Permanent solid state memory using carbon-based or metallic fuses
10/24/2013US20130280882 Method of fabricating semiconductor device
10/24/2013US20130280880 Phase-change memory device and method of fabricating the same
10/24/2013US20130279240 Hetero-switching layer in a rram device and method
10/24/2013US20130279239 Memory Cells, Methods of Forming Memory Cells, and Methods of Programming Memory Cells
10/24/2013US20130277640 Non-volatile semiconductor memory device and method for manufacturing the same
10/24/2013US20130277638 Memristive Element and Electronic Memory Based on Such Elements
10/24/2013US20130277637 Variable resistance memory device and method of manufacturing the same
10/24/2013US20130277635 Semiconductor device and its manufacturing method
10/23/2013EP2652808A1 Memristive element and electronic memory based on such elements
10/23/2013CN103370790A Non-volatile storage device and manufacturing method thereof
10/23/2013CN103367639A Zinc oxide nanowire low-power consumption resistive random access memory and preparation method thereof
10/23/2013CN103367638A Non-volatile memory unit circuit based on nano-structure switch memristor
10/23/2013CN103367637A Multi-dimensional storage capable of simultaneously regulating and controlling electrical property and magnetism of dielectric layer
10/23/2013CN103367636A ReRAM器件结构 ReRAM device structure
10/23/2013CN103367635A Storage unit and storage device
10/23/2013CN103367634A Manufacturing method for bottom electrical contact structure of phase change random access memory
10/23/2013CN103367633A Tungsten doped and modified phase change material for phase change storage device and application of tungsten doped and modified phase change material for phase change storage device
10/23/2013CN103367387A Variable resistance memory device
10/23/2013CN102376880B Production method of memory unit for phase-change memory
10/23/2013CN102292814B Non-volatile memory element, non-volatile memory device, non-volatile semiconductor device, and non-volatile memory element manufacturing method
10/23/2013CN102127372B Nano polishing solution for chemically mechanical polishing of vanadium oxide and application thereof
10/23/2013CN101981720B Vertical phase change memory cell
10/23/2013CN101878507B Method for driving resistance change element, initial processing method, and nonvolatile storage device
10/17/2013WO2013152536A1 Resistive random access memory of small electrode structure and preparation method therefor
10/17/2013US20130273707 ALD processing techniques for forming non-volatile resistive switching memories
10/17/2013US20130273690 Mixed valent oxide memory and method
10/17/2013US20130270510 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device
10/17/2013US20130270509 Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same
10/17/2013US20130270508 Non-Volatile Memory Device and Method of Forming the Same
10/17/2013US20130270507 Variable resistance memory devices and method of forming the same
10/17/2013US20130270506 Non-volatile semiconductor memory
10/17/2013US20130270505 Microelectronic device with programmable memory, including a layer of doped chalcogenide that withstands high temperatures
10/17/2013US20130270504 Memory Cells and Methods of Forming Memory Cells
10/17/2013US20130270503 Multi-layer phase change material
10/17/2013US20130270502 Semiconductor Phase Change Memory Using Face Center Cubic Crystalline Phase Change Material
10/16/2013EP2650937A2 RERAM device structure
10/16/2013EP2650408A1 Perovskite manganese oxide thin film and production method for same
10/16/2013EP2650407A1 Perovskite manganese oxide thin film
10/16/2013CN102386326B Preparation method of copper nitride resistive material for high-density resistive random access memory
10/15/2013US8558212 Conductive path in switching material in a resistive random access memory device and control
10/15/2013US8558210 Polysilicon emitter BJT access device for PCRAM
10/10/2013WO2013150791A1 Method for designing cross-point resistance change memory device using bidirectional current element controlling bypass current
10/10/2013US20130265822 Memory cell having dielectric memory element
10/10/2013US20130264537 Phase change memory and method for fabricating the same
10/10/2013US20130264536 Siox-based nonvolatile memory architecture
10/10/2013US20130264535 Resistance change memory and manufacturing method thereof
10/10/2013US20130264534 Selection device and nonvolatile memory cell including the same and method of fabricating the same
10/10/2013US20130264533 Reram device structure
10/09/2013EP2647048A2 Arrays of nonvolatile memory cells
10/09/2013EP2263252B1 Methods for etching carbon nano-tube films for use in non-volatile memories
10/09/2013CN103348472A Non-volatile storage element and non-volatile storage device
10/09/2013CN103346258A Phase change storage unit and preparing method thereof
10/09/2013CN103346257A Metallic oxide resistor storage unit and low-temperature photochemical preparation method thereof
10/09/2013CN103346256A Memristor based on ferroelectric tunnel junction
10/09/2013CN103346255A Heterojunction, ferroelectric tunnel junction and preparation method and application thereof
10/09/2013CN102544356B Method for preparing heating layer of phase change memory
10/09/2013CN102376884B Manufacturing method of phase change layer of phase change random access memory
10/09/2013CN102376879B Method for forming phase-change memory
10/09/2013CN102067234B Method for writing to resistance-change non-volatile memory elements, and resistance-change non-volatile memory device
10/09/2013CN102013454B Method of manufacturing nonvolatile memory device
10/08/2013US8552412 Variable resistance memory device and method of forming the same
10/08/2013US8551852 Semiconductor memory device and method for manufacturing same
10/03/2013WO2013145741A1 Non-volatile storage device and method for producing same
10/03/2013WO2013145736A1 Nonvolatile storage device
10/03/2013US20130260528 Memory device manufacturing method with memory element having a metal-oxygen compound
10/03/2013US20130260508 Methods for forming resistive switching memory elements
10/03/2013US20130256626 Semiconductor memory device and a method of manufacturing the same
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