Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2013
12/12/2013WO2013183101A1 Semiconductor storage device
12/12/2013US20130330901 Programmable metallization memory cell with layered solid electrolyte structure
12/12/2013US20130329483 Filamentary memory devices and methods
12/12/2013US20130328009 Nonvolatile variable resistance element
12/12/2013US20130328008 Nonvolatile resistance change element
12/12/2013US20130328007 Non-volatile solid state resistive switching devices
12/12/2013US20130328006 Switching device and memory device including the same
12/11/2013CN103441215A Phase-change storage structure of sandwich type blade electrode and preparing method thereof
12/11/2013CN103441214A Preparation method for resistive random access memory
12/11/2013CN102386323B Phase change memory element and manufacturing method thereof
12/11/2013CN102376881B Method for manufacturing memory unit of phase-change random access memory
12/10/2013US8604456 Nonvolatile memory device and method of manufacturing the same
12/05/2013US20130322158 Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods
12/05/2013US20130320291 Semiconductor structures and memory cells including conductive material and methods of fabrication
12/05/2013US20130320290 Phase change memory devices and methods of manufacturing the same
12/05/2013US20130320289 Resistance random access memory and method of fabricating the same
12/05/2013US20130320288 Semiconductor Constructions and Memory Arrays
12/05/2013US20130320287 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
12/05/2013US20130320286 Switching elements and devices, memory devices and methods of manufacturing the same
12/05/2013US20130320285 Field focusing features in a reram cell
12/05/2013US20130320284 Field focusing features in a reram cell
12/05/2013US20130320283 Memory Arrays And Methods Of Forming An Array Of Memory Cells
12/04/2013CN103427022A Phase change memory structure containing sandwich-type electrodes and producing method thereof
12/04/2013CN103427021A Memory unit of low-power resistive random access memory and preparation method of memory unit
12/04/2013CN103427020A Stress-write data storage device based on one-dimensional micro-nano film structure and preparation method of stress-write data storage device
12/04/2013CN102664235B Small-electrode-structure resistance random access memory and preparation method of small-electrode-structure resistance random access memory
12/04/2013CN102479921B Manufacture method of phase change memory
12/04/2013CN102468433B 相变存储器及其制作方法 Phase change memory and its production methods
12/04/2013CN102439724B Ferro-resistive random access memory (ferro-rram), operation method and manufacturing mehtod thereof
12/04/2013CN102237488B Phase-change random access memory device unit and preparation method thereof
12/04/2013CN102122635B Method for forming trench array
12/04/2013CN102013456B Method for manufacturing memory element
12/03/2013US8598563 Phase-change material and phase-change type memory device
12/03/2013US8598562 Memory cell structures
11/2013
11/28/2013US20130314973 Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells
11/28/2013US20130314971 Methods involving memory with high dielectric constant antifuses adapted for use at low voltage
11/28/2013US20130314970 Pillar-shaped nonvolatile memory and method of fabrication
11/28/2013US20130313511 Memory cell array and variable resistive memory device including the same
11/28/2013US20130313510 Memory device having self-aligned cell structure
11/28/2013US20130313509 Bipolar Multistate Nonvolatile Memory
11/28/2013US20130313508 Variable resistance memory and method of manufacturing the same
11/28/2013US20130313507 Resistive memory device and method for fabricating the same
11/28/2013US20130313505 Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
11/28/2013US20130313504 Resistive memory device and fabrication method thereof
11/28/2013US20130313503 Methods and apparatus for increasing memory density using diode layer sharing
11/28/2013US20130313502 High density variable resistive memory and method of fabricating the same
11/28/2013US20130313501 Drift-insensitive or invariant material for phase change memory
11/27/2013CN103415888A Resistance-change memory
11/27/2013CN103413890A Non-volatile resistive random access memory with ultra-low power consumption, method for manufacturing same and method for operating same
11/27/2013CN102683585B Resistive memory integrating standard complementary metal oxide semiconductor (CMOS) process and preparation method of resistive memory
11/27/2013CN102593355B Ti-Sb2Te3 phase-transition storage material
11/27/2013CN102368535B Erasable double layer film structure resistance variation memory cell and preparation method thereof
11/27/2013CN102148329B Resistance conversion memory structure and manufacturing method thereof
11/27/2013CN101894907B Method for manufacturing CuxO-based resistance memory
11/26/2013US8592795 Multilevel mixed valence oxide (MVO) memory
11/26/2013US8592789 Nonvolatile semiconductor memory device and manufacturing method thereof
11/26/2013US8592619 Bifunctional molecules comprising a cycloalkyne or heterocycloalkyne group and a redox group
11/21/2013US20130309782 Phase change material cell with piezoelectric or ferroelectric stress inducer liner
11/21/2013US20130306932 Nonvolatile resistance change element
11/21/2013US20130306931 Sidewall Thin Film Electrode with Self-Aligned Top Electrode and Programmable Resistance Memory
11/21/2013US20130306930 Memory Cells
11/21/2013US20130306929 Multilayer-Stacked Phase Change Memory Cell
11/20/2013CN103403905A Organic molecular memory
11/20/2013CN103403904A Organic molecular memory and method of manufacturing the same
11/20/2013CN103400938A Method for fabricating resistance layer oxide film of nonvolatile resistance random access memory
11/20/2013CN103400937A Preparation method of resistance switch adopting TiO2/SnO2 composite nano-rods
11/20/2013CN103400936A n-type semiconductor organic film and Schottky characteristic self-rectifying resistive random access memory
11/20/2013CN102222764B Method for manufacturing phase change memory
11/20/2013CN102047423B Nonvolatile storage element and nonvolatile storage device
11/20/2013CN102044631B Memory and method of fabricating the same
11/19/2013US8587983 Resistance random access memory structure for enhanced retention
11/14/2013WO2013169551A1 Resistance- switching memory cells having reduced metal migration and low current operation
11/14/2013US20130302966 Method of Forming Semiconductor Device Having Self-Aligned Plug
11/14/2013US20130301341 Hereto resistive switching material layer in rram device and method
11/14/2013US20130301338 Hybrid resistive memory devices and methods of operating and manufacturing the same
11/14/2013US20130299770 Resistive memory device
11/14/2013US20130299768 Thermally insulated phase change material cells
11/14/2013US20130299767 Depositing titanium silicon nitride films for forming phase change memories
11/14/2013US20130299766 Variable resistance memory device and methods of forming the same
11/14/2013US20130299765 Memory device and fabrication process thereof
11/14/2013US20130299764 Localized device
11/14/2013US20130299763 Variable resistance memory device and method for fabricating the same
11/13/2013CN103390724A Ultrathin multi-layered phase-change memory device
11/13/2013CN103390629A RRAM (resistive random access memory) and operation and manufacturing method thereof
11/13/2013CN103390628A Resistive memory integrated on rear end structure of integrated circuit and preparation method thereof
11/13/2013CN102544366B Resistance switch based on cobalt ferrite nano-film and preparation method therefor
11/12/2013US8581364 Resistance memory devices and methods of forming the same
11/12/2013US8581224 Memory cells
11/07/2013WO2013164467A2 Materials with tunable properties and devices and methods of making same using random nanowire or nanotube networks
11/07/2013US20130295745 Method of manufacturing nonvolatile memory device
11/07/2013US20130295744 Interface control for improved switching in rram
11/07/2013US20130295743 Nonvolatile memory device and method for manufacturing same
11/07/2013US20130295719 Graded metal oxide resistance based semiconductor memory device
11/07/2013US20130295717 Methods Of Depositing Antimony-Comprising Phase Change Material Onto A Substrate And Methods Of Forming Phase Change Memory Circuitry
11/07/2013US20130294145 Switching device structures and methods
11/07/2013US20130293227 Method for generating spin waves
11/07/2013US20130292634 Resistance-switching memory cells having reduced metal migration and low current operation and methods of forming the same
11/07/2013US20130292633 Etch bias homogenization
11/07/2013US20130292632 Resistive Switching Memory Element Including Doped Silicon Electrode
11/07/2013US20130292631 Multi-Layered Phase-Change Memory Device
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