| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 01/23/2014 | US20140021429 Nonvolatile memory element and method for manufacturing the same |
| 01/22/2014 | EP2686883A1 Dual-plane memory array |
| 01/22/2014 | EP2686875A2 Methods of forming at least one conductive element, methods of forming a semiconductor structure, methods of forming a memory cell and related semiconductor structures |
| 01/22/2014 | CN103534829A Ion implant modification of resistive random access memory devices |
| 01/22/2014 | CN103531710A High-speed low-power-consumption phase change memory cell and preparation method thereof |
| 01/22/2014 | CN103531709A 相变存储器及其制作方法 Phase change memory and its production methods |
| 01/22/2014 | CN103526247A Tellurium-based ternary nanowires and preparation method of array of tellurium-based ternary nanowires |
| 01/21/2014 | US8633464 In via formed phase change memory cell with recessed pillar heater |
| 01/16/2014 | WO2013164467A3 Materials with tunable properties and memory devices and methods of making same using random nanowire or nanotube networks |
| 01/16/2014 | US20140014893 Array operation using a schottky diode as a non-ohmic selection device |
| 01/16/2014 | US20140014892 Resistive-Switching Memory Element |
| 01/16/2014 | US20140014891 Dual-plane memory array |
| 01/16/2014 | US20140014890 Conductive path in switching material in a resistive random access memory device and control |
| 01/16/2014 | US20140014889 Semiconductor devices and methods of fabricating the same |
| 01/16/2014 | US20140014888 Thermally-Confined Spacer PCM Cells |
| 01/15/2014 | EP2684228A1 Electronic memory device |
| 01/15/2014 | CN103515535A Preparing method of phase-changing memory contact electrode and phase-changing memory contact electrode |
| 01/15/2014 | CN103515534A Resistive random access memory with high uniformity and manufacturing method thereof |
| 01/15/2014 | CN103515533A Switching elements and devices, memory devices and methods of manufacturing the same |
| 01/15/2014 | CN103515532A Resistive memory device and fabrication method thereof |
| 01/15/2014 | CN103515531A Non-volatile memory device having multi-level cells and method of forming the same |
| 01/15/2014 | CN103515530A Resistance memory cell and fabricating method thereof |
| 01/15/2014 | CN103515529A Structure and method for a complimentary resistive switching random access memory for high density application |
| 01/15/2014 | CN103514947A Structure and method for a forming-free resistive random access memory with multi-level cell |
| 01/15/2014 | CN102522500B Preparation method for phase change random storage array |
| 01/15/2014 | CN102403459B Silicon-doped bismuth telluride-based memory material for phase-change memory and preparation method of silicon-doped bismuth telluride-based memory material |
| 01/15/2014 | CN102299258B Manufacturing method of memory cell of resistive memory |
| 01/14/2014 | US8629420 Drain extended MOS device for bulk FinFET technology |
| 01/14/2014 | US8629034 Nonvolatile memory element and production method thereof and storage memory arrangement |
| 01/09/2014 | US20140011335 Phase change random access memory and method for manufacturing the same |
| 01/09/2014 | US20140011322 Memory Cells and Methods of Making Memory Cells |
| 01/09/2014 | US20140008603 Nonvolatile memory device |
| 01/09/2014 | US20140008602 Thermal isolation in memory cells |
| 01/09/2014 | US20140008600 Memory element and memory device |
| 01/09/2014 | US20140008599 Variable resistance nonvolatile storage device and method of forming memory cell |
| 01/09/2014 | US20140008598 Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same |
| 01/08/2014 | CN103500797A Resistive random access memory unit and manufacturing method thereof |
| 01/08/2014 | CN103500796A Oxide-based transparent RRAM (Resistive Random Access Memory) and preparation method thereof |
| 01/08/2014 | CN103500795A Preparation method of phase change memory electrode structure |
| 01/08/2014 | CN102447060B Manufacturing method for phase change memory |
| 01/08/2014 | CN101288187B Reproducible resistance variable insulating memory devices and methods for forming same |
| 01/07/2014 | US8623694 Methods of forming fast ion conductors and memory devices comprising diffused metal ions |
| 01/03/2014 | WO2014002656A1 Programming circuit, semiconductor device, and programming method |
| 01/02/2014 | US20140004680 Methods of manufacturing a phase change memory device |
| 01/02/2014 | US20140003123 Low power phase change memory cell |
| 01/02/2014 | US20140001431 Reduction of forming voltage in semiconductor devices |
| 01/02/2014 | US20140001430 Surface Treatment to Improve Resistive-Switching Characteristics |
| 01/02/2014 | US20140001429 Heterojunction oxide memory device with barrier layer |
| 01/01/2014 | CN103490009A Flexible resistive random access memory based on oxidized graphene and preparation method thereof |
| 01/01/2014 | CN103490008A Three-dimensional resistive random access memory devices, methods of operating the same, and methods of fabricating the same |
| 01/01/2014 | CN102479924B Manufacture method of phase change memory |
| 12/31/2013 | US8618524 Phase change memory with various grain sizes |
| 12/27/2013 | WO2013190988A1 Switching element and method for manufacturing switching element |
| 12/27/2013 | WO2013190741A1 Semiconductor device and programming method |
| 12/26/2013 | US20130344676 Phase change memory including ovonic threshold switch with layered electrode and methods for forming the same |
| 12/26/2013 | US20130344649 Memory elements and methods with improved data retention and/or endurance |
| 12/26/2013 | US20130341697 Tunnel transistor structure integrated with a resistance random access memory (rram) and a manufacturing method thereof |
| 12/26/2013 | US20130341696 Metal-oxide-semiconductor (mos) transistor structure integrated with a resistance random access memory (rram) and the manufacturing methods thereof |
| 12/26/2013 | US20130341587 Memory Arrays and Methods of Forming Memory Cells |
| 12/26/2013 | US20130341586 Memory Structures, Memory Arrays, Methods of Forming Memory Structures and Methods of Forming Memory Arrays |
| 12/26/2013 | US20130341585 Variable resistance element and semiconductor storage device |
| 12/26/2013 | US20130341584 Resistive-Switching Memory Elements Having Improved Switching Characteristics |
| 12/26/2013 | US20130341583 Resistive memory and fabricating method thereof |
| 12/26/2013 | US20130341582 Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof |
| 12/26/2013 | US20130341581 Device, a method for measuring temperature and a programmable insulator-semiconductor bipolar transistor |
| 12/25/2013 | CN103474572A Flexible-substrate-based resistive random access memory with CRS action and preparation method thereof |
| 12/25/2013 | CN103474571A Resistance memory component and manufacturing method thereof |
| 12/25/2013 | CN103474570A Resistive memory integrated into rear-end structure of integrated circuit and preparation method thereof |
| 12/25/2013 | CN102655211B Preparation method of resistance random access memory and resistance random access memory |
| 12/25/2013 | CN102084429B Method of driving non-volatile memory elements and non-volatile memory |
| 12/25/2013 | CN101981721B Multiple bit phase change memory cell |
| 12/25/2013 | CN101971382B Multilayer structure comprising phase change material layer and method of producing same |
| 12/24/2013 | US8614499 Memory cell having heater material and variable resistance material embedded within insulating material |
| 12/24/2013 | US8614433 Semiconductor devices and methods of manufacturing the same |
| 12/19/2013 | WO2013188563A1 Non-volatile memory having 3d array architecture with staircase word lines and vertical bit lines and methods thereof |
| 12/19/2013 | US20130337628 Resistance change memory and manufacturing method thereof |
| 12/19/2013 | US20130337627 Method of manufacturing electronic component |
| 12/19/2013 | US20130337606 Nonvolatile Memory Device Using a Tunnel Nitride As A Current Limiter Element |
| 12/19/2013 | US20130336046 Non-volatile memory device having multi-level cells and method of forming the same |
| 12/19/2013 | US20130336043 Resistance change memory and forming method of the resistance change device |
| 12/19/2013 | US20130336042 Resistive memory device and memory apparatus and data processing system having the same |
| 12/19/2013 | US20130336041 Structure and Method for a Forming Free Resistive Random Access Memory with Multi-Level Cell |
| 12/19/2013 | US20130334491 Methods for Forming Nickel Oxide Films for Use With Resistive Switching Memory Devices |
| 12/19/2013 | US20130334490 Transition Metal Oxide Bilayers |
| 12/19/2013 | US20130334489 Storage device and storage unit |
| 12/19/2013 | US20130334488 Vertical memory device and method of fabricating the same |
| 12/19/2013 | US20130334487 Resistance change memory |
| 12/19/2013 | US20130334486 Structure and method for a complimentary resistive switching random access memory for high density application |
| 12/19/2013 | US20130334485 Memristive elements that exhibit minimal sneak path current |
| 12/19/2013 | US20130334484 Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory Applications |
| 12/18/2013 | CN103460383A Nonvolatile storage element and method of manufacturing thereof |
| 12/18/2013 | CN103460295A Semiconductor memory device |
| 12/18/2013 | CN103456883A Field focusing features in a reram cell |
| 12/18/2013 | CN103456882A Phase change memory devices and methods of manufacturing the same |
| 12/18/2013 | CN103456881A Phase change random access memory manufacturing method |
| 12/18/2013 | CN103456880A Phase change memory, bottom contact structure of phase change memory, production method of phase change memory, and production method of bottom contact structure |
| 12/18/2013 | CN102361063B Thin film material for phase change memory and preparation method thereof |
| 12/18/2013 | CN102184744B Memory device equipped with field enhanced arrangement and manufacture method thereof |
| 12/12/2013 | WO2013183242A1 Method for driving non-volatile semiconductor device |
| 12/12/2013 | WO2013183132A1 Electrode structure of solid type rechargeable battery |