Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1989
06/27/1989US4842892 Vapor deposition
06/27/1989CA1256593A1 Optical chemical vapor deposition method to produce an electronic device having a multi-layer structure
06/27/1989CA1256592A1 Electric-electronic device including polyimide thin film
06/27/1989CA1256591A1 Electric-electronic device including polyimide thin film
06/27/1989CA1256590A1 Compound semiconductor device with layers having different lattice constants
06/27/1989CA1256588A1 Process for forming ldd mos/cmos structures
06/21/1989EP0321366A1 Method of producing an integrated circuit with medium voltage MOS transistors
06/21/1989EP0321347A1 Method of manufacturing a MIS transistor with raised dielectric interface of the gate and substrate at its extremities
06/21/1989EP0321074A2 Transistor comprising a 2-dimensional charge carrier gas collector
06/21/1989EP0321065A2 Method of manufacture of Schottky compound semiconductor devices
06/21/1989EP0321038A2 Liquid crystal display devices and their method of manufacture
06/21/1989EP0320977A2 Method for manufacturing semiconductor devices having twin wells
06/21/1989EP0320916A2 Electrically erasable and programmable read only memory using stacked-gate cell
06/21/1989EP0320738A2 Thyristor capable of spontaneous firing
06/21/1989EP0320618A1 Housing for a GTO power thyristor
06/20/1989US4841350 Static induction photothyristor having a non-homogeneously doped gate
06/20/1989US4841347 MOS VLSI device having shallow junctions and method of making same
06/20/1989US4841346 Field-effect transistor devices
06/20/1989US4841345 Modified conductivity modulated MOSFET
06/20/1989US4841272 Semiconductor diffusion strain gage
06/20/1989US4841169 Dual-gate fet amplifier-mixer with intermediate ohmic island for rejecting a frequency band
06/20/1989US4840917 Atomic hydrogen diffusion; density
06/20/1989US4840067 Semiconductor pressure sensor with method diaphragm
06/20/1989CA1256207A1 Charge transfer device provided with self-induction members
06/15/1989WO1989005519A1 Self-aligned interconnects for semiconductor devices
06/15/1989WO1989005518A1 Process for forming isolation regions in a semiconductor substrate
06/15/1989WO1989005517A1 Self-aligned, planarized contacts for semiconductor devices
06/15/1989WO1989005516A1 Self-aligned semiconductor devices
06/14/1989EP0320321A1 Integrated circuit fuse-blowing means
06/14/1989EP0320273A1 Bi-mos semiconductor device
06/14/1989EP0320231A2 Erasable programmable memory
06/14/1989EP0320217A2 An improved twin-well BiCMOS process
06/14/1989EP0320110A2 Memory device comprising a resonant-tunneling semiconductor diode and mode of operation
06/13/1989US4839911 Charger transfer shift register with voltage sensing device using a floating-potential diode
06/13/1989US4839768 Protection of integrated circuits from electrostatic discharges
06/13/1989US4839709 Detector and mixer diode operative at zero bias voltage
06/13/1989US4839708 Electromechanical semiconductor transducer
06/13/1989US4839707 LCMOS displays fabricated with implant treated silicon wafers
06/13/1989US4839705 X-cell EEPROM array
06/13/1989US4839704 Application of deep-junction non-self-aligned transistors for suppressing hot carriers
06/13/1989US4839703 High speed and power transistor
06/13/1989US4839702 Semiconductor device based on charge emission from a quantum well
06/13/1989US4839612 High-frequency power amplifier having heterojunction bipolar transistor
06/13/1989US4839312 Glow discharge decomposition onto matrix
06/13/1989US4839310 High mobility transistor with opposed-gates
06/13/1989US4839305 Doping, masking, diffusion; silicon nitride spacers
06/13/1989US4839304 Multilayer-dielectric substrate, electrode, protective film, fillers, and electroconductive layer
06/13/1989US4839219 Heat, chemical resistant
06/13/1989US4838993 Method of fabricating MOS field effect transistor
06/13/1989US4838654 Liquid crystal display device having display and driver sections on a single board
06/13/1989US4838089 Semiconductor pressure sensor
06/13/1989US4838088 Pressure transducer and method for fabricating same
06/07/1989EP0319427A2 Nonvolatile memory element
06/07/1989EP0319215A2 Fabrication of FET integrated circuits
06/07/1989EP0319213A2 Method for fabricating semiconductor devices which include metal-containing material regions
06/07/1989EP0319047A2 Power integrated circuit
06/07/1989EP0175751B1 Method of fabricating vlsi cmos devices
06/07/1989CN1004456B Semiconductor device and method of producing same
06/06/1989US4837610 Insulation film for a semiconductor device
06/06/1989US4837608 Double gate static induction thyristor and method for manufacturing the same
06/06/1989US4837606 Vertical MOSFET with reduced bipolar effects
06/06/1989US4837605 Indium-phosphide hetero-MIS-gate field effect transistor
06/06/1989US4837530 Wideband (DC-50 GHz) MMIC FET variable matched attenuator
06/06/1989US4837180 Ladder gate LDDFET
06/06/1989US4837179 Method of making a LDD mosfet
06/06/1989US4837178 Method for producing a semiconductor integrated circuit having an improved isolation structure
06/06/1989US4837177 High speed switching
06/06/1989US4837176 Integrated circuit structures having polycrystalline electrode contacts and process
06/06/1989US4837175 Making a buried channel FET with lateral growth over amorphous region
06/06/1989US4837174 Implanting metal into silicon substrate; heat treatment
06/06/1989US4837173 Overlapping zone doped with germanium and zone doped with phosphorus annealing
06/06/1989US4836650 Process for the production of a diode array and liquid crystal display screen
06/06/1989US4836025 Accelerometer
06/01/1989WO1989005041A1 Zener diode emulation and method of forming the same
06/01/1989WO1989005040A1 Quantum well field-controlled semiconductor triode
05/1989
05/31/1989EP0318404A1 Monolithic protection diode assembly and protection systems
05/31/1989EP0318317A2 Semiconductor memory having a small write current
05/31/1989EP0318297A2 A semiconducteur device including a field effect transistor having a protective diode between source and drain thereof
05/31/1989EP0318210A2 Voltage controlled variable capacitor and oscillator
05/31/1989EP0317993A1 Heterojunction semiconductor devices
05/31/1989EP0317952A2 Device having superlattice structure, and method of and apparatus for manufacturing the same
05/31/1989EP0317934A1 Three-dimensional 1-transistor cell structure with a trench capacitor for a dynamic semiconductor memory, and method for its manufacture
05/31/1989EP0317915A2 Method of manufacturing semiconductor device with overvoltage self-protection
05/31/1989EP0317806A2 Integrated-circuit device with a capacitor
05/31/1989EP0317802A1 Turn-off power semiconductor device and method of making the same
05/31/1989EP0178512B1 Mos circuit including an eeprom
05/31/1989CN2038669U Mos element with double-grid
05/30/1989US4835741 Frasable electrically programmable read only memory cell using a three dimensional trench floating gate
05/30/1989US4835740 Floating gate type semiconductor memory device
05/30/1989US4835596 Transistor with a high collector-emitter breakthrough voltage
05/30/1989US4835592 Semiconductor wafer with dice having briding metal structure and method of manufacturing same
05/30/1989US4835590 Semiconductor memory device using junction short type programmable element
05/30/1989US4835588 Transistor
05/30/1989US4835586 Dual-gate high density fet
05/30/1989US4835585 Trench gate structures
05/30/1989US4835584 Trench transistor
05/30/1989US4835581 Electron gas hole gas tunneling transistor device
05/30/1989US4835580 Schottky barrier diode and method
05/30/1989US4835579 Semiconductor apparatus
05/30/1989US4835578 Semiconductor device having a quantum wire and a method of producing the same
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