| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 04/12/1989 | EP0190243B1 Method for producing an integrated circuit of the mis type |
| 04/12/1989 | EP0087462B1 Process for manufacturing an integrated circuit structure |
| 04/11/1989 | US4821236 Semiconductor nonvolatile memory |
| 04/11/1989 | US4821136 Power transistor with self-protection against direct secondary breakdown |
| 04/11/1989 | US4821095 Insulated gate semiconductor device with extra short grid and method of fabrication |
| 04/11/1989 | US4821093 Dual channel high electron mobility field effect transistor |
| 04/11/1989 | US4821092 Thin film transistor array for liquid crystal display panel |
| 04/11/1989 | US4821090 Compound semiconductor integrated circuit device |
| 04/11/1989 | US4821089 Protection of IGFET integrated circuits from electrostatic discharge |
| 04/11/1989 | US4821084 Insulated gate type field effect transistor |
| 04/11/1989 | US4821083 Thyristor drive system |
| 04/11/1989 | US4821082 Heterojunction bipolar transistor with substantially aligned energy levels |
| 04/11/1989 | US4821081 Large pitch CCD with high charge transfer efficiency |
| 04/11/1989 | US4820656 Method for producing a p-doped semiconductor region in an n-conductive semiconductor body |
| 04/11/1989 | US4820654 Isolation of regions in a CMOS structure using selective epitaxial growth |
| 04/11/1989 | CA1252372A1 Nitsinitride and oxidized nitsinitride dielectrics on silicon |
| 04/06/1989 | DE3732611A1 Method for producing an implanted source/drain connection for a short-channel MOS transistor |
| 04/06/1989 | DE3732406A1 Semiconductor structure having a Schottky contact |
| 04/05/1989 | EP0310194A1 Continuous process for producing linear, secondary, aliphatic alcohol ethoxylates |
| 04/05/1989 | EP0310112A2 Insulated gate transistor operable at a low drain-source voltage |
| 04/05/1989 | EP0310087A2 Semiconductor device having bipolar transistor with trench |
| 04/05/1989 | EP0310047A2 Double-diffused mos fet |
| 04/05/1989 | EP0309828A2 An electronic semiconductor device, in particular a silicon-gate field-effect MOS transistor, for high input voltages |
| 04/05/1989 | EP0309784A1 Contact strip structure for bipolar transistors |
| 04/05/1989 | EP0309772A2 Vertical semiconductor device having a sidewall emitter |
| 04/05/1989 | EP0309748A1 Low feedback MOS triode |
| 04/05/1989 | EP0309556A1 Radiation hardened semiconductor device and method of making the same |
| 04/05/1989 | EP0309542A1 Charge-coupled device with dual layer electrodes |
| 04/05/1989 | CN1032268A Superconducting devices and manufacturing methods for same |
| 04/04/1989 | US4819055 Semiconductor device having a PN junction formed on an insulator film |
| 04/04/1989 | US4819054 Semiconductor IC with dual groove isolation |
| 04/04/1989 | US4819046 Integrated circuit with improved protective device |
| 04/04/1989 | US4819045 MOS transistor for withstanding a high voltage |
| 04/04/1989 | US4819044 Vertical type MOS transistor and its chip |
| 04/04/1989 | US4819043 MOSFET with reduced short channel effect |
| 04/04/1989 | US4819038 TFT array for liquid crystal displays allowing in-process testing |
| 04/04/1989 | US4819037 Semiconductor device |
| 04/04/1989 | US4819036 With superlattices of group iii-v binary crystals |
| 04/04/1989 | US4818721 Implanting, annealing, activating, doping with beryllium |
| 04/04/1989 | US4818720 Forming integrated circuit semiconductor by diffusion doping |
| 04/04/1989 | US4818719 Forming electrode wiring layers with substrates of different conduction |
| 04/04/1989 | US4818718 Transistor with floating and control gate electrodes formed with photoresist masking |
| 04/04/1989 | US4818715 Method of fabricating a LDDFET with self-aligned silicide |
| 04/04/1989 | US4818714 Method of making a high performance MOS device having LDD regions with graded junctions |
| 04/04/1989 | US4818713 Techniques useful in fabricating semiconductor devices having submicron features |
| 04/04/1989 | US4818636 Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them |
| 04/04/1989 | US4818593 Polybenzimidazole, polybenzothiazole, or polyoxazole |
| 04/04/1989 | US4818565 Method to stabilize metal contacts on mercury-cadmium-telluride alloys |
| 04/04/1989 | CA1252229A1 Multijunction semiconductor device |
| 04/04/1989 | CA1252227A1 Self-aligned silicide base contact for bipolar transistor |
| 04/04/1989 | CA1252225A1 Lateral insulated gate transistors with coupled anode and gate regions |
| 04/04/1989 | CA1252222A1 Formation of self-aligned stacked cmos structures by lift-off |
| 03/30/1989 | DE3831264A1 Verfahren zur herstellung eines bicmos-halbleiters A process for producing a BiCMOS semiconductor |
| 03/30/1989 | DE3731000A1 Integrated semiconductor arrangement |
| 03/29/1989 | EP0309290A1 Compound semiconductor field-effect transistor |
| 03/29/1989 | EP0308969A2 High electron mobility transistor structure |
| 03/29/1989 | EP0308948A2 Patterned thin film and process for preparing the same |
| 03/29/1989 | EP0308940A2 Method of manufacturing ohmic contacts having low transfer resistances |
| 03/29/1989 | EP0308939A2 Method of manufacturing a MESFET with self aligned gate |
| 03/29/1989 | EP0308814A2 Modification of interfacial fields between dielectrics and semiconductors |
| 03/29/1989 | EP0308667A1 Extraction electrode to lower the turn-off time of a semiconductor device |
| 03/29/1989 | EP0308612A2 Field effect transistor and manufacturing method thereof |
| 03/29/1989 | EP0308588A1 Semiconductor-on-insulator fabrication method |
| 03/29/1989 | EP0308480A1 Method of manufacture of a uniphase ccd |
| 03/28/1989 | US4816894 Semiconductor variable capacitance element |
| 03/28/1989 | US4816892 Semiconductor device having turn-on and turn-off capabilities |
| 03/28/1989 | US4816891 Optically controllable static induction thyristor device |
| 03/28/1989 | US4816888 Multilayer transistor-titanium, dielectric and noble metal |
| 03/28/1989 | US4816886 Apparatus with field effect transistor having reduced channel length |
| 03/28/1989 | US4816885 Thin-film transistor matrix for liquid crystal display |
| 03/28/1989 | US4816884 High density vertical trench transistor and capacitor memory cell structure and fabrication method therefor |
| 03/28/1989 | US4816883 Nonvolatile, semiconductor memory device |
| 03/28/1989 | US4816882 Power MOS transistor with equipotential ring |
| 03/28/1989 | US4816881 Multilayer transistor |
| 03/28/1989 | US4816880 Junction field effect transistor |
| 03/28/1989 | US4816879 Schottky-type rectifier having controllable barrier height |
| 03/28/1989 | US4816878 Negative resistance semiconductor device |
| 03/28/1989 | US4816425 Polycide process for integrated circuits |
| 03/28/1989 | US4816424 Refractory metal nitride barrier |
| 03/28/1989 | US4816423 Forming oxide, patterning; forming tefractory metal silicide and doping |
| 03/28/1989 | US4816421 Method of making a heteroepitaxial structure by mesotaxy induced by buried implantation |
| 03/28/1989 | CA1251675A1 High resolution image restitution apparatus allowing development of the exposed films in real time |
| 03/23/1989 | WO1989002655A1 Integrated circuit trench cell |
| 03/23/1989 | WO1989002654A2 Resonant tunneling transistor utilizing upper resonance |
| 03/23/1989 | WO1989002652A1 Processes for preparing t-gate and transistor, and t-gate and transistor fabricated thereby |
| 03/23/1989 | EP0333851A1 Resonant tunneling transistor utilizing upper resonance |
| 03/22/1989 | EP0308316A1 Process for self-aligning the floating gates of non-volatile memory floating gate transistors, and memory obtained by this process |
| 03/22/1989 | EP0308152A2 MIS integrated circuit device and method of manufacturing the same |
| 03/22/1989 | EP0308128A1 Method of manufacturing thin film transistors |
| 03/22/1989 | EP0307850A1 Si/SiGe semiconductor body |
| 03/22/1989 | EP0307849A2 Application of deep-junction non-self-aligned transistors for suppressing hot carriers |
| 03/22/1989 | EP0307844A2 Semiconductor integrated circuit having interconnection with improved design flexibility |
| 03/22/1989 | EP0307598A2 Method of fabricating a bipolar semiconductor device with silicide contacts |
| 03/22/1989 | CN1031910A Single-temp-zone open-tube diffusion technology of gallium for producing thyristors |
| 03/21/1989 | US4815037 Bipolar type static memory cell |
| 03/21/1989 | US4814852 Controlled voltage drop diode |
| 03/21/1989 | US4814851 High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor |
| 03/21/1989 | US4814844 Split two-phase CCD clocking gate apparatus |
| 03/21/1989 | US4814843 Charge transfer device with pn junction gates |
| 03/21/1989 | US4814842 Thin film transistor utilizing hydrogenated polycrystalline silicon |