Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1989
03/21/1989US4814841 Semiconductor device
03/21/1989US4814840 High-density reprogrammable semiconductor memory device
03/21/1989US4814839 Insulated gate static induction transistor and integrated circuit including same
03/21/1989US4814838 Semiconductor device and method of manufacturing the same
03/21/1989US4814837 Quantum well electron barrier diode
03/21/1989US4814835 Active load type of current source and method of making it
03/21/1989US4814292 Large grains
03/21/1989US4814290 Method for providing increased dopant concentration in selected regions of semiconductor devices
03/21/1989US4814288 Method of fabricating semiconductor devices which include vertical elements and control elements
03/21/1989US4814286 EEPROM cell with integral select transistor
03/21/1989US4814284 GaAs plannar diode and manufacturing method therefor
03/21/1989US4813272 Semiconductor pressure sensor
03/21/1989CA1251578A1 Semiconductor devices employing conductivity modulation
03/21/1989CA1251363A1 Method of manufacturing a thin conductor device
03/16/1989DE3828886A1 Device having a superlattice structure
03/15/1989EP0307272A2 Aluminum alloy semiconductor interconnections having high purity titanium or niobium barrier layer
03/15/1989EP0307032A2 Manufacturing process for a monolithic semiconductor device having multiple epitaxial layers with a low concentration of impurities
03/15/1989EP0307021A1 Self-aligned metallization for semiconductor device and process using selectively deposited tungsten
03/14/1989US4812950 Means for mounting a ROM on a printed circuit board
03/14/1989US4812898 Electronically programmable and erasable memory device having floating gate electrode with a unique distribution of impurity concentration
03/14/1989US4812894 Semiconductor device
03/14/1989US4812893 Triac desensitized with respect to re-striking risks on switching across a reactive load
03/14/1989US4812891 Bipolar lateral pass-transistor for CMOS circuits
03/14/1989US4812890 Bipolar microwave integratable transistor
03/14/1989US4812889 Semiconductor device FET with reduced energy level degeneration
03/14/1989US4812888 Suspended gate field effect semiconductor pressure transducer device
03/14/1989US4812887 Charge-coupled device
03/14/1989US4812886 Multilayer contact apparatus and method
03/14/1989US4812885 Capacitive coupling
03/14/1989US4812668 Multiplexer elements for photovoltaic detectors
03/14/1989US4812417 Bipolar transistors
03/14/1989CA1251285A1 Semiconductor device having electrode and first level inteconnection embedded in two-layer insulating film
03/09/1989WO1989002162A1 Schottky diode
03/09/1989WO1989002095A1 Lcmos displays fabricated with implant treated silicon wafers
03/08/1989EP0306258A2 Transistor
03/08/1989EP0306213A2 Submicron bipolar transistor with edge contacts
03/08/1989EP0306039A2 Semiconductor device
03/08/1989EP0305978A2 Magnetoelectric element and magnetoelectric apparatus
03/08/1989EP0305977A2 Method for doping a semiconductor integrated circuit
03/08/1989EP0305975A2 Compound semiconductor MESFET
03/08/1989EP0305936A2 Mos ic reverse battery protection
03/08/1989EP0305935A2 VDD load dump protection circuit
03/08/1989EP0305742A1 Manufacturing method of semiconductor device having CCD and peripheral circuit
03/08/1989EP0305741A2 Semiconductor device with floating gate
03/08/1989EP0305513A1 Low leakage cmos/insulator substrate devices and method of forming the same.
03/08/1989CN1031627A Electronic device utilizing superconducting materials
03/08/1989CN1031619A Semiconductor device provided with charge transfer device
03/07/1989US4811155 Protection circuit for a semiconductor integrated circuit having bipolar transistors
03/07/1989US4811080 Monolithic pin diode and method for its manufacture
03/07/1989US4811077 Compound semiconductor surface termination
03/07/1989US4811075 High voltage MOS transistors
03/07/1989US4811074 Darlington circuit comprising a field effect transistor and a bipolar output transistor
03/07/1989US4811072 Semiconductor device
03/07/1989US4811071 Vertical transistor structure
03/07/1989US4811070 Heterojunction bipolar transistor with inversion layer base
03/07/1989US4811068 Charge transfer device
03/07/1989US4811066 Compact multi-state ROM cell
03/07/1989US4811065 Power DMOS transistor with high speed body diode
03/07/1989US4811064 Static induction transistor and integrated circuit device using same
03/07/1989US4811063 JMOS transistor utilizing polysilicon sinks
03/07/1989US4810907 Semiconductor resistance element used in a semiconductor integrated circuit
03/07/1989US4810906 Vertical inverter circuit
03/07/1989US4810667 Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer
03/07/1989US4810666 Metal oxide semiconductor integrated circuit, dopes, polysilicon, masking, protective films, dielectrics
03/07/1989US4810665 Semiconductor device and method of fabrication
03/07/1989US4810664 Method for making patterned implanted buried oxide transistors and structures
03/07/1989US4810637 Lamination, metals, semiconductors, dopes, etching, passivation, conductors
03/07/1989US4810060 Active color liquid crystal display element compensating for differing voltage-transmission curves of the primary colors
03/07/1989CA1250962A1 Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices
03/02/1989DE3728136A1 Field-effect transistor
03/01/1989EP0305296A1 Semiconductor layer structure having an aluminum-silicon alloy layer
03/01/1989EP0305253A1 Double heterojunction microwave transistor
03/01/1989EP0305228A1 Field effect semiconductor device comprising an auxiliary electrode
03/01/1989EP0305167A2 Electronic devices utilizing superconducting materials
03/01/1989EP0305147A1 Semiconductor contact process
03/01/1989EP0305121A2 Heterojunction bipolar transistor
03/01/1989EP0305030A1 Liquid crystal display element
03/01/1989EP0304929A2 Semiconductor device having an electrode covered with a protective film
03/01/1989EP0304896A2 Non-volatile semiconductor memory device and method of the manufacture thereof
03/01/1989EP0304839A2 Method for fabricating insulated gate semiconductor device
03/01/1989EP0304824A2 Thin film mos transistor having pair of gate electrodes opposing across semiconductor layer
03/01/1989EP0304811A1 MOS transistor
03/01/1989CN1031447A Charge-coupled device
02/1989
02/28/1989US4809307 Charge transfer device capacitor coupled output
02/28/1989US4809228 Semiconductor memory device having controllable redundant scheme
02/28/1989US4809225 Memory cell with volatile and non-volatile portions having ferroelectric capacitors
02/28/1989US4809153 Low-inductance bus bar arrangement
02/28/1989US4809056 Semiconductor device having a silicon on insulator structure
02/28/1989US4809055 Semiconductor device having an electrode and a method of manufacturing the same
02/28/1989US4809051 Vertical punch-through cell
02/28/1989US4809048 Charge-coupled device having channel region with alternately changing potential in a direction perpendicular to charge transfer
02/28/1989US4809047 Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
02/28/1989US4809045 Insulated gate device
02/28/1989US4809044 Thin film overvoltage protection devices
02/28/1989US4808852 Input circuit having level shift
02/28/1989US4808545 High speed GaAs MESFET having refractory contacts and a self-aligned cold gate fabrication process
02/28/1989US4808544 LDD structure containing conductive layer between gate oxide and sidewall spacer
02/28/1989US4808543 Well Extensions for trench devices
02/28/1989US4808542 Cavity prevention; re-etching an overlapping silicon nitride layer
02/28/1989US4808261 Fabrication process for EPROM cells with oxide-nitride-oxide dielectric
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