Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1989
08/31/1989DE3904830A1 Field-effect-controlled power semiconductor component
08/30/1989EP0330142A2 Multi-gate field-effect transistor
08/30/1989EP0330122A1 Method of manufacturing a field-effect-controllable bipolar transistor
08/30/1989EP0330105A2 Integrated thin-film diaphragm
08/30/1989EP0329993A2 Small drive power thyristor
08/30/1989EP0329992A2 Small drive power turn-off thyristor
08/30/1989EP0329887A1 Liquid crystal display device
08/30/1989EP0250479A4 Current metering apparatus.
08/30/1989EP0197052B1 A novel semiconductor device
08/30/1989CN1035205A Cut-off semiconductor device and circuit arrangement with same
08/30/1989CN1035204A Protective arrangement for mos circuits
08/29/1989US4862249 Packaging system for stacking integrated circuits
08/29/1989US4862248 Contacting system for bipolar electronic circuit elements, more particularly semiconductor circuit elements
08/29/1989US4862244 Integrated circuits
08/29/1989US4862241 Semiconductor integrated circuit device
08/29/1989US4862240 Complementary semiconductor device
08/29/1989US4862239 Power semiconductor component
08/29/1989US4862238 Transistors
08/29/1989US4862235 Electrode structure for a corner turn in a series-parallel-series charge coupled device
08/29/1989US4862234 Thin-film transistor
08/29/1989US4862233 Integrated circuit device having vertical MOS provided with Zener diode
08/29/1989US4862232 Transistor structure for high temperature logic circuits with insulation around source and drain regions
08/29/1989US4862229 Semiconductor Schottky devices having improved voltage blocking characteristics
08/29/1989US4862228 High mobility semiconductor devices
08/29/1989US4861731 Semiconductors
08/29/1989US4861730 Semiconductors
08/29/1989US4861418 Method of manufacturing semiconductor crystalline layer
08/29/1989US4861393 Smooth, crack-free
08/24/1989WO1989007833A2 Semi-insulating layer and ultra-high-speed photoconductive devices made therefrom
08/24/1989WO1989007832A1 Semiconductor superlattice heterostructures fabrication methods, structures and devices
08/24/1989DE3844388A1 Dynamic direct access memory device
08/24/1989DE3804254A1 Semiconductor component which can be controlled by the field effect
08/23/1989EP0329569A2 Semiconductor device with a thin insulating film
08/23/1989EP0329482A2 Method of manufacturing a thin film transistor
08/23/1989EP0329401A2 Bipolar transistors and methods of production
08/23/1989EP0329274A1 A method of forming anodised regions on an anodisable metal layer
08/23/1989EP0329047A2 MIS device with auxiliary gate
08/23/1989EP0329033A2 Semiconductor device having two conductive layers and method of manufacturing the same
08/23/1989EP0328970A2 Method of depositing tungsten on silicon in a non-self-limiting CVD process and semi-conductor device manufactured thereby
08/23/1989EP0328918A2 Electrically erasable non-volatile semiconductor memory device
08/23/1989EP0328810A2 A matrix-type liquid-crystal display panel
08/23/1989EP0328778A1 High power switch
08/23/1989EP0328594A1 Schottky diode
08/23/1989EP0139019B1 Semiconductor device and method of manufacture thereof
08/23/1989CN2043428U Temp. control thyratron
08/23/1989CN1035028A 大功率开关 Power switch
08/23/1989CN1035024A Turn-off semiconductor device
08/22/1989US4860254 Non-volatile electronic memory
08/22/1989US4860152 Two stage protection circuit for a power MOSFET driving an inductive load
08/22/1989US4860085 Submicron bipolar transistor with buried silicide region
08/22/1989US4860084 Semiconductor device MOSFET with V-shaped drain contact
08/22/1989US4860082 Bipolar transistor
08/22/1989US4860080 Isolation for transistor devices having a pilot structure
08/22/1989US4860078 High-frequency transistor with low internal capacitance and low thermal resistance
08/22/1989US4860077 Vertical semiconductor device having a sidewall emitter
08/22/1989US4860072 Monolithic semiconductor device and method of manufacturing same
08/22/1989US4860071 Semiconductor memory using trench capacitor
08/22/1989US4860068 Semiconductor devices and methods of making such devices
08/22/1989US4860067 Semiconductor heterostructure adapted for low temperature operation
08/22/1989US4860064 Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate
08/22/1989US4859630 Method of manufacturing a semiconductor device
08/22/1989US4859625 Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy
08/22/1989US4859624 Manufacturing method of semiconductor device having CCD and peripheral circuit
08/22/1989US4859623 Method of forming vertical gate thin film transistors in liquid crystal array
08/22/1989US4859622 Method of making a trench capacitor for dram
08/22/1989US4859621 Method for setting the threshold voltage of a vertical power MOSFET
08/22/1989US4859620 Graded extended drain concept for reduced hot electron effect
08/22/1989US4859617 Thin-film transistor fabrication process
08/22/1989US4859616 Method of making schottky contacts on semiconductor surfaces
08/22/1989US4859253 Nitriding
08/22/1989CA1258718A1 Metallized semiconductor device including an interface layer
08/16/1989EP0328465A1 Switch mode power MOS transistor gate control circuit
08/16/1989EP0328350A2 Dry etching with hydrogen bromide or bromine
08/16/1989EP0328331A2 Semiconductor device and method of manufacturing the same
08/16/1989EP0328286A2 Multicollector vertical PNP transistor
08/16/1989EP0328108A2 Electrochemical sensor facilitating repeated measurement
08/16/1989EP0327901A1 High power GTO thyristor and method of making the same
08/16/1989EP0327859A2 A vertical isolated-collector transistor of the PNP type incorporating a device for suppressing the effects of parasitic junction components
08/16/1989EP0207982B1 Dielectrically isolated semiconductor devices
08/16/1989EP0159797B1 Thyristor device and process for producing it
08/16/1989CN1034827A Semiconductor device and method of manufacturing same
08/16/1989CN1034826A Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body
08/15/1989US4858185 Zero power, electrically alterable, nonvolatile latch
08/15/1989US4857987 Semiconductor device
08/15/1989US4857983 Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
08/15/1989US4857979 Platinum silicide imager
08/15/1989US4857977 Lateral metal-oxide-semiconductor controlled triacs
08/15/1989US4857975 GaAs field effect transistor having a WSi Schottky gate electrode improved for high-speed operation
08/15/1989US4857974 Circuit comprising conductive lines for the transfer of high-speed signals
08/15/1989US4857972 Impatt diode
08/15/1989US4857971 (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures
08/15/1989US4857763 MOS semiconductor integrated circuit in which the production of hot carriers near the drain of a short n channel conductivity type MOS transistor is decreased
08/15/1989US4857481 Method of fabricating airbridge metal interconnects
08/15/1989US4857480 Method for diffusing P-type material using boron disks
08/15/1989US4857479 Method of making poly-sidewall contact transistors
08/15/1989US4857478 Method of manufacturing a semiconductor memory device
08/15/1989US4857476 Bipolar transistor process using sidewall spacer for aligning base insert
08/15/1989US4857141 Method of forming holes in semiconductor integrated circuit device
08/15/1989US4856702 Method for manufacturing semiconductor components
08/15/1989CA1258539A2 High-performance trench capacitors for dram cells