Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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08/31/1989 | DE3904830A1 Field-effect-controlled power semiconductor component |
08/30/1989 | EP0330142A2 Multi-gate field-effect transistor |
08/30/1989 | EP0330122A1 Method of manufacturing a field-effect-controllable bipolar transistor |
08/30/1989 | EP0330105A2 Integrated thin-film diaphragm |
08/30/1989 | EP0329993A2 Small drive power thyristor |
08/30/1989 | EP0329992A2 Small drive power turn-off thyristor |
08/30/1989 | EP0329887A1 Liquid crystal display device |
08/30/1989 | EP0250479A4 Current metering apparatus. |
08/30/1989 | EP0197052B1 A novel semiconductor device |
08/30/1989 | CN1035205A Cut-off semiconductor device and circuit arrangement with same |
08/30/1989 | CN1035204A Protective arrangement for mos circuits |
08/29/1989 | US4862249 Packaging system for stacking integrated circuits |
08/29/1989 | US4862248 Contacting system for bipolar electronic circuit elements, more particularly semiconductor circuit elements |
08/29/1989 | US4862244 Integrated circuits |
08/29/1989 | US4862241 Semiconductor integrated circuit device |
08/29/1989 | US4862240 Complementary semiconductor device |
08/29/1989 | US4862239 Power semiconductor component |
08/29/1989 | US4862238 Transistors |
08/29/1989 | US4862235 Electrode structure for a corner turn in a series-parallel-series charge coupled device |
08/29/1989 | US4862234 Thin-film transistor |
08/29/1989 | US4862233 Integrated circuit device having vertical MOS provided with Zener diode |
08/29/1989 | US4862232 Transistor structure for high temperature logic circuits with insulation around source and drain regions |
08/29/1989 | US4862229 Semiconductor Schottky devices having improved voltage blocking characteristics |
08/29/1989 | US4862228 High mobility semiconductor devices |
08/29/1989 | US4861731 Semiconductors |
08/29/1989 | US4861730 Semiconductors |
08/29/1989 | US4861418 Method of manufacturing semiconductor crystalline layer |
08/29/1989 | US4861393 Smooth, crack-free |
08/24/1989 | WO1989007833A2 Semi-insulating layer and ultra-high-speed photoconductive devices made therefrom |
08/24/1989 | WO1989007832A1 Semiconductor superlattice heterostructures fabrication methods, structures and devices |
08/24/1989 | DE3844388A1 Dynamic direct access memory device |
08/24/1989 | DE3804254A1 Semiconductor component which can be controlled by the field effect |
08/23/1989 | EP0329569A2 Semiconductor device with a thin insulating film |
08/23/1989 | EP0329482A2 Method of manufacturing a thin film transistor |
08/23/1989 | EP0329401A2 Bipolar transistors and methods of production |
08/23/1989 | EP0329274A1 A method of forming anodised regions on an anodisable metal layer |
08/23/1989 | EP0329047A2 MIS device with auxiliary gate |
08/23/1989 | EP0329033A2 Semiconductor device having two conductive layers and method of manufacturing the same |
08/23/1989 | EP0328970A2 Method of depositing tungsten on silicon in a non-self-limiting CVD process and semi-conductor device manufactured thereby |
08/23/1989 | EP0328918A2 Electrically erasable non-volatile semiconductor memory device |
08/23/1989 | EP0328810A2 A matrix-type liquid-crystal display panel |
08/23/1989 | EP0328778A1 High power switch |
08/23/1989 | EP0328594A1 Schottky diode |
08/23/1989 | EP0139019B1 Semiconductor device and method of manufacture thereof |
08/23/1989 | CN2043428U Temp. control thyratron |
08/23/1989 | CN1035028A 大功率开关 Power switch |
08/23/1989 | CN1035024A Turn-off semiconductor device |
08/22/1989 | US4860254 Non-volatile electronic memory |
08/22/1989 | US4860152 Two stage protection circuit for a power MOSFET driving an inductive load |
08/22/1989 | US4860085 Submicron bipolar transistor with buried silicide region |
08/22/1989 | US4860084 Semiconductor device MOSFET with V-shaped drain contact |
08/22/1989 | US4860082 Bipolar transistor |
08/22/1989 | US4860080 Isolation for transistor devices having a pilot structure |
08/22/1989 | US4860078 High-frequency transistor with low internal capacitance and low thermal resistance |
08/22/1989 | US4860077 Vertical semiconductor device having a sidewall emitter |
08/22/1989 | US4860072 Monolithic semiconductor device and method of manufacturing same |
08/22/1989 | US4860071 Semiconductor memory using trench capacitor |
08/22/1989 | US4860068 Semiconductor devices and methods of making such devices |
08/22/1989 | US4860067 Semiconductor heterostructure adapted for low temperature operation |
08/22/1989 | US4860064 Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate |
08/22/1989 | US4859630 Method of manufacturing a semiconductor device |
08/22/1989 | US4859625 Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy |
08/22/1989 | US4859624 Manufacturing method of semiconductor device having CCD and peripheral circuit |
08/22/1989 | US4859623 Method of forming vertical gate thin film transistors in liquid crystal array |
08/22/1989 | US4859622 Method of making a trench capacitor for dram |
08/22/1989 | US4859621 Method for setting the threshold voltage of a vertical power MOSFET |
08/22/1989 | US4859620 Graded extended drain concept for reduced hot electron effect |
08/22/1989 | US4859617 Thin-film transistor fabrication process |
08/22/1989 | US4859616 Method of making schottky contacts on semiconductor surfaces |
08/22/1989 | US4859253 Nitriding |
08/22/1989 | CA1258718A1 Metallized semiconductor device including an interface layer |
08/16/1989 | EP0328465A1 Switch mode power MOS transistor gate control circuit |
08/16/1989 | EP0328350A2 Dry etching with hydrogen bromide or bromine |
08/16/1989 | EP0328331A2 Semiconductor device and method of manufacturing the same |
08/16/1989 | EP0328286A2 Multicollector vertical PNP transistor |
08/16/1989 | EP0328108A2 Electrochemical sensor facilitating repeated measurement |
08/16/1989 | EP0327901A1 High power GTO thyristor and method of making the same |
08/16/1989 | EP0327859A2 A vertical isolated-collector transistor of the PNP type incorporating a device for suppressing the effects of parasitic junction components |
08/16/1989 | EP0207982B1 Dielectrically isolated semiconductor devices |
08/16/1989 | EP0159797B1 Thyristor device and process for producing it |
08/16/1989 | CN1034827A Semiconductor device and method of manufacturing same |
08/16/1989 | CN1034826A Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body |
08/15/1989 | US4858185 Zero power, electrically alterable, nonvolatile latch |
08/15/1989 | US4857987 Semiconductor device |
08/15/1989 | US4857983 Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication |
08/15/1989 | US4857979 Platinum silicide imager |
08/15/1989 | US4857977 Lateral metal-oxide-semiconductor controlled triacs |
08/15/1989 | US4857975 GaAs field effect transistor having a WSi Schottky gate electrode improved for high-speed operation |
08/15/1989 | US4857974 Circuit comprising conductive lines for the transfer of high-speed signals |
08/15/1989 | US4857972 Impatt diode |
08/15/1989 | US4857971 (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures |
08/15/1989 | US4857763 MOS semiconductor integrated circuit in which the production of hot carriers near the drain of a short n channel conductivity type MOS transistor is decreased |
08/15/1989 | US4857481 Method of fabricating airbridge metal interconnects |
08/15/1989 | US4857480 Method for diffusing P-type material using boron disks |
08/15/1989 | US4857479 Method of making poly-sidewall contact transistors |
08/15/1989 | US4857478 Method of manufacturing a semiconductor memory device |
08/15/1989 | US4857476 Bipolar transistor process using sidewall spacer for aligning base insert |
08/15/1989 | US4857141 Method of forming holes in semiconductor integrated circuit device |
08/15/1989 | US4856702 Method for manufacturing semiconductor components |
08/15/1989 | CA1258539A2 High-performance trench capacitors for dram cells |