H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1988
10/25/1988	US4780753 Semiconductor integrated circuit device
10/25/1988	US4780750 Electrically alterable non-volatile memory device
10/25/1988	US4780749 Double barrier tunnel diode having modified injection layer
10/25/1988	US4780748 Field-effect transistor having a delta-doped ohmic contact
10/25/1988	US4780431 Process for making structures including E2PROM nonvolatile memory cells with self-aligned layers of silicon and associated transistors
10/25/1988	US4780430 Forming three epitaxial growth layers, doping
10/25/1988	US4780429 Doping, etching, insulated gates
10/25/1988	US4780428 Forming and removing silicon dioxide, silicon nitaide and oxygen-doped silicon films; gate insulation
10/25/1988	US4780427 Doping, etching, diffusing
10/25/1988	US4780426 Method for manufacturing high-breakdown voltage semiconductor device
10/25/1988	US4780425 Method of making a bipolar transistor with double diffused isolation regions
10/25/1988	CA1243734A1 Charge-coupled transversal filter
10/20/1988	WO1988008206A1 Heterojunction bipolar transistor
10/20/1988	WO1988008203A1 Packaging system for stacking integrated circuits
10/20/1988	WO1988008202A1 Radiation hardened semiconductor device and method of making the same
10/20/1988	WO1988006804A3 Low leakage cmos/insulator substrate devices and method of forming the same
10/19/1988	EP0287385A2 Method of fabricating a field-effect transistor
10/19/1988	EP0287318A2 Integrated transistor and manufacturing process therefor
10/19/1988	EP0287195A1 Power MOS transistor with integrated resistor
10/19/1988	EP0287114A1 Thyristor of overvoltage self-protection type
10/19/1988	EP0287096A1 Method of forming holes in semiconductor integrated circuit device
10/19/1988	EP0287056A2 Dynamic random access memory device having a plurality of one transistor type memory cells
10/19/1988	EP0287031A2 High breakdown voltage insulating film provided between polysilicon layers
10/19/1988	EP0181355B1 Monolithic integrated planar semi-conductor device
10/19/1988	EP0084558B1 Monolithically merged field effect transistor and bipolar junction transistor
10/19/1988	CN88102047A Electric circuit having superconducting multilayered structure and manufacturing method for same
10/19/1988	CN88101860A Method for manufacturing semiconductor components
10/18/1988	US4779127 Three-dimensional integrated circuit
10/18/1988	US4779125 Semiconductor device and arrangement
10/18/1988	US4779124 Virtual phase buried channel CCD
10/18/1988	US4779123 Insulated gate transistor array
10/18/1988	US4779004 Infrared imager
10/18/1988	US4778774 In semiconductor substrate; high speed
10/18/1988	US4778773 Semiconductors; gate electrode as mask for photoresist layer being exposed through transparent substrate
10/18/1988	US4778772 Method of manufacturing a bipolar transistor
10/18/1988	US4778560 Method for production of thin film transistor array substrates
10/18/1988	CA1243421A1 Shallow junction complementary vertical bipolar transistor pair
10/18/1988	CA1243404A1 High speed data acquisition utilizing multiplex charge transfer device
10/18/1988	CA1243388A1 Impurity band conduction semiconductor devices
10/13/1988	DE3808084A1 High-temperature diode
10/13/1988	DE3710903A1 Field-effect-controllable semiconductor device
10/12/1988	EP0286428A2 Method of fabricating a junction field effect transistor
10/12/1988	EP0286348A2 Vertically integrated photodetector-amplifier
10/12/1988	EP0286121A2 Nonvolatile semiconductor memory device
10/12/1988	EP0286117A1 Bipolar Transistor
10/12/1988	EP0285930A1 Mesfet device formed on a semi-insulative substrate
10/12/1988	EP0285923A1 Gate turn-off thyristor and method of making the same
10/12/1988	EP0285854A1 Thin film capacitor
10/12/1988	CN87107592A Semiconductor device having semiconductor region in which band gap being continueously graded
10/11/1988	US4777521 High voltage semiconductor devices
10/11/1988	US4777519 Charge transfer device
10/11/1988	US4777518 Semiconductor device including gate protection circuit with capacitor under input pad
10/11/1988	US4777517 Field effect transistor characteristics independent of gate orientations
10/11/1988	US4777387 Solid state relay circuit
10/11/1988	US4777149 Platinum diffusion near pn diode junction as lifetime killer
10/11/1988	US4776673 Liquid-crystal display device
10/11/1988	CA1243133A1 Method of manufacturing a semiconductor device, in which a double layer-consisting of poly si and a silicide-present on a layer of silicon oxide is etched in a plasma
10/11/1988	CA1243132A1 Semiconductor device electrode and contact structure
10/11/1988	CA1243131A1 Self-registration method of manufacturing a semiconductor device
10/11/1988	CA1243130A1 Distributed field effect transistor structure
10/11/1988	CA1243129A1 Method of controlling forward voltage across schottky diode
10/11/1988	CA1243112A1 Charge-coupled semiconductor device with dynamic control
10/06/1988	WO1988007767A1 Charge-coupled device with dual layer electrodes
10/06/1988	WO1988007766A1 Ccd electrometer architecture
10/06/1988	WO1988007760A1 Method of manufacture of a uniphase ccd
10/06/1988	WO1988007758A1 Method of manufacture of a two-phase ccd
10/05/1988	EP0285445A2 Electric circuit having superconducting multilayered structure and manufacturing method for same
10/05/1988	EP0285206A1 Process for making a field effect transistor type semiconductor device
10/05/1988	EP0284818A1 Method and device for layer bonding
10/05/1988	EP0284817A1 Method for making semiconductor components
10/05/1988	EP0284794A1 Refractory metal - titanium nitride conductive structures and processes for forming the same
10/04/1988	US4775916 Pressure contact semiconductor device
10/04/1988	US4775883 Asymmetrical thyristor and method for producing same
10/04/1988	US4775882 Silicon doped gallium-arsenic semiconductors
10/04/1988	US4775879 FET structure arrangement having low on resistance
10/04/1988	US4775878 Semiconductor device formed in semi-insulative substrate
10/04/1988	US4775643 Mesa zener diode and method of manufacture thereof
10/04/1988	US4775641 High density crystallographic defects silicon on dielectric
10/04/1988	US4775425 High electroconductivity
09/1988
09/29/1988	DE3809218A1 Semiconductor device having a trench, and method for fabricating such a semiconductor device
09/29/1988	DE3708474A1 Majority-carrier semiconductor component and method of fabricating it
09/28/1988	EP0284153A1 Integrated circuit with an I2L transistor with a high output current, and I2L stage with such a transistor
09/28/1988	EP0284065A2 Structure of complementary field effect transistor
09/28/1988	EP0283991A2 Method of manufacturing semiconductor device
09/28/1988	EP0283964A2 Dynamic random access memory device having a plurality of improved one-transistor type memory cells
09/28/1988	EP0283878A1 Field effect transistor
09/28/1988	EP0283788A1 Turn off semiconductor power device
09/28/1988	EP0283588A2 Controllable power semiconductor device
09/28/1988	EP0283496A1 Semi-conductor element with a p-region on the anode side and a weakly-doped adjacent n-base region.
09/28/1988	CN88100671A Controllablle power semiconductor device
09/27/1988	US4774719 Charge-coupled device with diode cut-off input
09/27/1988	US4774560 High voltage guard ring with variable width shallow portion
09/27/1988	US4774558 Thermally-activated, shorting diode switch having non-operationally-alterable junction path
09/27/1988	US4774556 Non-volatile semiconductor memory device
09/27/1988	US4774555 Power hemt structure
09/27/1988	US4774207 With molybdenum
09/27/1988	US4774206 Method for the manufacture of a self-aligned metal contact
09/27/1988	US4774204 Method for forming self-aligned emitters and bases and source/drains in an integrated circuit
09/27/1988	US4774202 Memory device with interconnected polysilicon layers and method for making
09/27/1988	US4774201 Chemical vapor deposition

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