Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1988
12/28/1988EP0296658A1 Semiconductor device comprising a capacitor and a buried passivation layer
12/28/1988EP0296418A2 Deposition of amorphous silicon for the formation of interlevel dielectrics in semiconductor memory devices
12/28/1988EP0296348A1 Process for etching holes or grooves in n-type silicium
12/28/1988EP0296246A1 Semiconductor device and method of fabricating the same
12/28/1988CA1247755A Field effect transistor
12/28/1988CA1247754A Group iii-v semiconductor electrical contact
12/28/1988CA1247740A Floating gate device using a composite dielectric
12/27/1988US4794565 Electrically programmable memory device employing source side injection
12/27/1988US4794564 Nonvolatile semiconductor memory including means for detecting completion of writing operation
12/27/1988US4794563 Semiconductor memory device having a high capacitance storage capacitor
12/27/1988US4794562 Electrically-erasable/programmable nonvolatile semiconductor memory device
12/27/1988US4794561 Static ram cell with trench pull-down transistors and buried-layer ground plate
12/27/1988US4794445 Semiconductor device
12/27/1988US4794444 Ohmic contact and method for making same
12/27/1988US4794442 Three-dimensional integrated circuit
12/27/1988US4794440 Heterojunction bipolar transistor
12/27/1988US4794436 High voltage drifted-drain MOS transistor
12/27/1988US4794434 Trench cell for a dram
12/27/1988US4794433 Non-volatile semiconductor memory with non-uniform gate insulator
12/27/1988US4794432 Mosfet structure with substrate coupled source
12/27/1988US4794091 Method of making high-performance dram arrays including trench capacitors
12/27/1988US4793102 Method of producing a beveled peripheral profile on a semiconductor disc
12/22/1988EP0218685A4 Electrostatic discharge input protection network.
12/22/1988DE3818533A1 Field-effect transistor
12/21/1988EP0296038A1 EPROM memory erasable by pulses
12/21/1988EP0296030A1 Non volatile memory cell and process for making the same
12/21/1988EP0295935A1 Electrically erasable programmable read only memory
12/21/1988EP0295709A2 Dynamic random access memory device and method of producing the same
12/21/1988EP0295643A2 Field effect transistor with short channel length and process of fabrication thereof
12/21/1988EP0295490A1 Compound semiconductor surface termination
12/21/1988EP0295391A1 High voltage MOS transistors
12/21/1988EP0295367A1 Gate structure in semiconductor devices
12/21/1988CN87101227A Complementary silicon-on-insulator lateral insulated gate rectifiers
12/20/1988US4792925 Eprom memory matrix with symmetrical elementary MOS cells and writing method therefor
12/20/1988US4792841 Semiconductor devices and a process for producing the same
12/20/1988US4792840 Resistor integrated on a semiconductor substrate
12/20/1988US4792839 Semiconductor power circuit breaker structure obviating secondary breakdown
12/20/1988US4792838 Gate turn-off thyristor
12/20/1988US4792837 Orthogonal bipolar transistor
12/20/1988US4792832 Superlattice semiconductor having high carrier density
12/20/1988US4792531 Self-aligned gate process
12/19/1988EP0179138A4 A method of forming a composite semiconductor structure.
12/15/1988WO1988010007A1 Composite structure, application to a laser and process for producing same
12/14/1988EP0295121A1 Method for fabricating a self-aligned lightly doped drain semiconductor device with silicide
12/14/1988EP0295097A1 Fabricating a semiconductor structure
12/14/1988EP0294989A2 Non-volatile semi-conductor memory device
12/14/1988EP0294899A2 Display device for use in the reflection mode
12/14/1988EP0294888A2 A method of manufacturing a semiconductor device
12/14/1988EP0294885A2 Method of manufacturing lateral insulated-gate field-effect transistors
12/14/1988EP0294882A2 High voltage semiconductor with integrated low voltage circuitry
12/14/1988EP0294881A2 A semiconductor device and a circuit suitable for use in an intelligent power switch
12/14/1988EP0294868A1 Semiconductor device of the SOI type and method of manufacturing same
12/14/1988EP0294864A2 Fabrication process for electrically cancellable nonvolatile EPROM memory cells and the cell thus obtained
12/14/1988EP0294840A2 Semiconductor memory device
12/14/1988EP0294802A1 Thin-film transistor fabrication process
12/14/1988EP0294372A1 A low temperature method for forming a gate insulator layer for semiconductor devices
12/14/1988CN87200650U High positive voltage diode
12/13/1988USRE32800 Method of making mosfet by multiple implantations followed by a diffusion step
12/13/1988US4791474 Semiconductor integrated circuit device
12/13/1988US4791471 Semiconductor integrated circuit device
12/13/1988US4791470 Reverse conducting gate turn-off thyristor device
12/13/1988US4791464 Semiconductor device that minimizes the leakage current associated with the parasitic edge transistors and a method of making the same
12/13/1988US4791462 Dense vertical j-MOS transistor
12/13/1988US4791071 Transistors; enhanced surface mobilities; less stress
12/13/1988US4791070 Method of fabricating a solid state image sensing device
12/13/1988CA1246758A1 Field effect transistor with source and drain having three regions
12/13/1988CA1246694A1 Logic circuit
12/07/1988EP0294259A2 Screening of gate oxides on semiconductors
12/07/1988EP0293846A1 MIS power transistor
12/07/1988EP0293731A2 A bicmos process for forming self-aligned NPN emitters and bases and mosfet/source drains
12/07/1988EP0293641A1 Process for the manufacture of a full self-aligned bipolar transistor
12/07/1988EP0293630A1 Semiconductor body with heatsink
12/07/1988EP0293629A2 Method of manufacture of a semiconductor device with contact on both sides
12/07/1988EP0293588A2 Pedestal transistors and method of production thereof
12/07/1988EP0293575A2 Integrated circuit with protection device
12/07/1988EP0293439A1 Semi-insulating group iii-v based compositions.
12/06/1988US4789886 Method and apparatus for insulating high voltage semiconductor structures
12/06/1988US4789885 Nested and overlapped
12/06/1988US4789884 Integrated injection logic circuit
12/06/1988US4789883 Integrated circuit structure having gate electrode and underlying oxide and method of making same
12/06/1988US4789882 High power MOSFET with direct connection from connection pads to underlying silicon
12/06/1988US4789647 Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body
12/06/1988US4789644 Process for fabrication, by means of epitaxial recrystallization, of insulated-gate field-effect transistors with junctions of minimum depth
12/06/1988US4789643 Method of manufacturing a heterojunction bipolar transistor involving etch and refill
12/06/1988US4789421 Intermediate layer comprising at least two different superlattices
11/1988
11/30/1988EP0293339A1 Nonvolatile memory device with a high number of cycle programming endurance
11/30/1988EP0293134A1 Method of fabricating trench cell capacitors on a semiconductor substrate
11/30/1988EP0292972A2 IC with recombination layer and guard ring separating VDMOS and CMOS or the like
11/30/1988EP0292895A2 Charge transfer device
11/30/1988EP0292782A2 Vertical mosfet having voltage regulator diode at shallower subsurface position
11/30/1988EP0292641A2 Output buffer of MOS semiconductor integrated circuit
11/30/1988EP0292568A1 Hetero-junction bipolar transistor
11/30/1988EP0292529A1 Optical reading of quantum well device.
11/30/1988CN88102808A Charge-coupled device
11/30/1988CN88101587A 半导体器件 Semiconductor devices
11/29/1988US4788667 Semiconductor memory device having nibble mode function
11/29/1988US4788662 Semiconductor memory device using resonant-tunneling hot electron transistor
11/29/1988US4788579 Semiconductor superlattice
11/29/1988US4788160 Process for formation of shallow silicided junctions
11/29/1988US4788158 Forming conductive gate perpendicular to channel
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