Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1989
10/19/1989WO1989007833A3 Semi-insulating layer and ultra-high-speed photoconductive devices made therefrom
10/18/1989EP0337869A1 Reading method for a CCD and readoutput for such a device
10/18/1989EP0337823A2 MOS field effect transistor having high breakdown voltage
10/18/1989EP0337720A2 Process for producing a high performance bipolar structure
10/18/1989EP0337629A1 Variable gain switch
10/18/1989EP0337550A1 Integrated circuit comprising complementary MOS transistors
10/18/1989EP0337540A1 Combination of a support and a semiconductor body and method of manufacturing such a combination
10/18/1989EP0337529A2 Tablecloth memory matrix with staggered EPROM cells
10/18/1989EP0337482A2 Semiconducteur protection device
10/18/1989EP0337481A2 Semiconductor device
10/18/1989EP0337436A2 Semiconductor memory device having improved dynamic memory cell structure
10/18/1989EP0337433A2 Cell array pattern layout of semiconductor memory device
10/18/1989EP0337395A2 A semiconductor device suitable for cryogenic operations
10/18/1989EP0337384A2 Redundant circuit incorporated in semiconductor memory device
10/18/1989EP0337380A2 Semiconductor pressure sensor
10/18/1989EP0337362A2 Power semiconductor device
10/18/1989EP0337299A2 A method for manufacturing a field effect transistor
10/18/1989EP0337020A1 Semiconductor device with source and drain depth extenders and a method of making the same
10/18/1989EP0336951A1 Integrated circuit contact fabrication process
10/18/1989EP0139764B1 Method of manufacturing thin-film integrated devices
10/17/1989US4875151 Two transistor full wave rectifier
10/17/1989US4875130 ESD low resistance input structure
10/17/1989US4875098 Output signal processing circuit for CCD register
10/17/1989US4875088 Semiconductor device having a backplate electrode
10/17/1989US4875086 Containing buffer and glass bonding layers
10/17/1989US4875085 Bipolar transistors
10/17/1989US4875083 Reduced electrical resistance and leakage; high temperature, radiation operation
10/17/1989US4874720 Applying tungsten layer over silicon dioxide
10/17/1989US4874717 Semiconductor circuit containing integrated bipolar and MOS transistors on a chip and method of producing same
10/17/1989US4874715 Read only memory with improved channel length control and method of forming
10/17/1989US4874713 Method of making asymmetrically optimized CMOS field effect transistors
10/17/1989US4874712 Fabrication method of bipolar transistor
10/17/1989US4874484 Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon
10/17/1989US4873871 Mechanical field effect transistor sensor
10/12/1989DE3810768A1 Controllable electrical conductor
10/11/1989EP0336552A2 Identifying program units in an operating environment in a computer
10/11/1989EP0336505A1 Device and method of manufacturing a device
10/11/1989EP0336498A1 Semiconductor memory device
10/11/1989EP0336393A2 Semiconductor device having a structure which makes parasitic transistors hard to operate and method of manufacture thereof
10/11/1989EP0336172A2 Semiconductor device capable of extremely fast switching
10/11/1989EP0335965A1 Phantom esd protection circuit employing e-field crowding
10/10/1989US4873564 Conductivity-modulated FET with improved pinch off-ron performance
10/10/1989US4873562 Charge-coupled device with lowering of transfer potential at output and fabrication method thereof
10/10/1989US4873561 High dynamic range charge-coupled device
10/10/1989US4873558 Multilayer; variations in doping concentration
10/10/1989US4873557 MIS FET and process of fabricating the same
10/10/1989US4873556 Hetero-junction device
10/10/1989US4873200 Oxidizing polycrystalline silicon substrate, doping, etching, overcoating with metal silicide
10/10/1989US4873199 Method of making bipolar integrated circuits
10/10/1989US4872744 Single quantum well optical modulator
10/10/1989CA1262293A1 Semiconductor super lattice device
10/10/1989CA1262290A1 Thin film overvoltage protection devices
10/05/1989WO1989009494A1 Gate dielectric for a thin film field effect transistor
10/05/1989WO1989007367A3 Analog-to-digital converter made with focused ion beam technology
10/04/1989EP0335793A1 Semiconductor pressure transducer
10/04/1989EP0335750A2 Vertical power mosfet having high withstand voltage and high switching speed
10/04/1989EP0335724A2 Thin film transistor array for an electro-optical device and method of manufacturing the same
10/04/1989EP0335720A2 Bipolar transistor device and method of manufacturing the same
10/04/1989EP0335632A2 High current thin film transistor
10/04/1989EP0335603A2 A fabrication method and structure for field isolation in field effect transistors on integrated circuit chips
10/04/1989EP0335498A2 Field-effect transistor having a lateral surface superlattice, and method of making the same
10/04/1989EP0335445A1 Method of manufacturing a conductivity modulation MOS semiconductor power device (Himos)
10/04/1989EP0335395A2 Non-volatile semiconductor memory device and method for manufacture thereof
10/04/1989EP0335383A2 Semiconductor device having a metallization film layer
10/04/1989EP0335288A2 A method to evaluate the homogenization of the properties across the silicon surface region of an oxidized silicon wafer
10/04/1989EP0335217A2 Integrated Schottky diode and transistor
10/04/1989EP0334927A1 Integrated circuit trench cell
10/03/1989US4872046 Heterojunction semiconductor device with <001> tilt
10/03/1989US4872045 Input protection device for C-MOS device
10/03/1989US4872044 Static induction type thyristor
10/03/1989US4872043 Forming transfer electrons; hydrogen bonding
10/03/1989US4872041 Semiconductor device equipped with a field effect transistor having a floating gate
10/03/1989US4872040 Self-aligned heterojunction transistor
10/03/1989US4872039 Buried lateral diode and method for making same
10/03/1989US4872038 Lateral surface superlattice having negative differential conductivity novel process for producing same
10/03/1989US4872010 Analog-to-digital converter made with focused ion beam technology
10/03/1989US4871963 Method and apparatus for testing EPROM type semiconductor devices during burn-in
10/03/1989US4871687 Method of fabricating a MESFET transistor with gate spaced above source electrode by layer of air or the like
10/03/1989US4871686 Integrated Schottky diode and transistor
10/03/1989US4871685 Method of manufacturing bipolar transistor with self-aligned external base and emitter regions
10/03/1989US4871684 Emitter, contact formed beneath protective coating
10/03/1989CA1262187A1 Charge-coupled device
10/03/1989CA1262110A1 Method of making edge-aligned implants and electrodes therefor
09/1989
09/27/1989EP0334761A1 Method for forming a self-aligned source/drain contact for a MOS transistor
09/27/1989EP0334747A1 Device for interconnecting and protecting a bare chip of a high frequency component
09/27/1989EP0334682A2 Heterostructure transistor having a germanium layer on gallium arsenide and a method for manufacturing the same using molecular beam expitaxial growth
09/27/1989EP0334659A2 Conductivity modulated field effect transistor device
09/27/1989EP0334637A2 A semiconductor device
09/27/1989EP0334058A2 Charge injection device with low noise readout
09/27/1989EP0334052A2 Thin film transistor
09/27/1989EP0334006A1 Stacked channel heterojunction fet
09/27/1989EP0333997A2 Bipolar transistor
09/27/1989EP0333838A1 GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER
09/26/1989US4870478 Dual-gate gallium arsenide power metal semiconductor field effect transistor
09/26/1989US4870475 Semiconductor device and method of manufacturing the same
09/26/1989US4870472 Method for resistor trimming by metal migration
09/26/1989US4870470 Silicon, transistors
09/26/1989US4870469 Tunnel injection type static transistor and its integrated circuit
09/26/1989US4870467 Monolithic temperature compensated voltage-reference diode and method of its manufacture
09/26/1989US4870028 Epitaxial semiconductor, multilaher, dopes
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