| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/03/1989 | EP0314334A1 Isolation of a charge coupled device |
| 05/03/1989 | EP0314226A2 Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it |
| 05/03/1989 | EP0314221A2 Semiconductor switch with parallel LDMOS and LIGT |
| 05/03/1989 | EP0314215A2 A charge-coupled device |
| 05/03/1989 | EP0314211A1 Display device including lateral schottky diodes |
| 05/03/1989 | EP0313777A2 Method for providing increased dopant concentration in selected regions of semiconductor devices |
| 05/03/1989 | EP0313749A2 Heterojunction bipolar transistor |
| 05/03/1989 | EP0313683A1 Method for fabricating a semiconductor integrated circuit structure having a submicrometer length device element |
| 05/03/1989 | DE3835987A1 Semiconductor device having a nitrogen-containing titanium film |
| 05/03/1989 | DE3832641A1 Semiconductor memory (storage) device and production method |
| 05/03/1989 | CN1004102B Optical circuit |
| 05/02/1989 | US4827324 Implantation of ions into an insulating layer to increase planar pn junction breakdown voltage |
| 05/02/1989 | US4827323 Stacked capacitor |
| 05/02/1989 | US4827322 Power transistor |
| 05/02/1989 | US4827321 Metal oxide semiconductor gated turn off thyristor including a schottky contact |
| 05/02/1989 | US4827320 Semiconductor device with strained InGaAs layer |
| 05/02/1989 | US4827319 Variable capacity diode with hyperabrupt profile and plane structure and the method of forming same |
| 05/02/1989 | US4826783 Method for fabricating a BiCMOS device |
| 05/02/1989 | US4826782 Lightly-doped drain, semiconductors |
| 05/02/1989 | CA1253633A1 Field-effect transistor having a delta-doped ohmic contact |
| 05/02/1989 | CA1253632A1 Heterojunction field effect transistor |
| 05/02/1989 | CA1253631A1 Protection of igfet integrated circuits from electrostatic discharge |
| 04/27/1989 | DE3832253A1 Latchup- und entladungsschutzeinrichtung fuer einen integrierten cmos schaltkreis Latchup- and discharge protection device for an integrated CMOS circuitry |
| 04/26/1989 | EP0313526A1 Saturation limiting system for a vertical, isolated collector PNP transistor and monolithically integrated structure thereof |
| 04/26/1989 | EP0313427A1 Memory in integrated circuit |
| 04/26/1989 | EP0313250A2 Technique for use in fabricating semiconductor devices having submicron features |
| 04/26/1989 | EP0313249A1 Resistive field shields for high voltage devices |
| 04/26/1989 | EP0313199A1 Liquid crystal display device |
| 04/26/1989 | EP0313031A2 CCD video camera |
| 04/26/1989 | EP0313000A1 Insulated-gate bipolar transistor |
| 04/26/1989 | EP0312965A2 Method of producing a planar self-aligned heterojunction bipolar transistor |
| 04/26/1989 | EP0312955A2 Semiconductor device having an improved thin film transistor |
| 04/25/1989 | US4825281 Bipolar transistor with sidewall bare contact structure |
| 04/25/1989 | US4825279 Semiconductor device |
| 04/25/1989 | US4825278 Radiation hardened semiconductor devices |
| 04/25/1989 | US4825275 Integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias |
| 04/25/1989 | US4825272 Semiconductor power switch with thyristor |
| 04/25/1989 | US4825270 Gate turn-off thyristor |
| 04/25/1989 | US4825269 Double heterojunction inversion base transistor |
| 04/25/1989 | US4825267 Field effect transistor having self-registering source and drain regions to minimize capacitances |
| 04/25/1989 | US4825266 Semiconductor diode |
| 04/25/1989 | US4825265 Transistor |
| 04/25/1989 | US4825264 Resonant tunneling semiconductor device |
| 04/25/1989 | US4825018 Voltage detection circuit |
| 04/25/1989 | US4824805 Epitaxial layer consisting of collector, base and emitter on substrate; etching recesses |
| 04/25/1989 | US4824804 Method of making vertical enhancement-mode group III-V compound MISFETS |
| 04/25/1989 | US4824800 Method of fabricating semiconductor devices |
| 04/25/1989 | US4824799 Dielectric on semiconductor substrate with openings above buri er |
| 04/25/1989 | US4824796 Doping to simultaneously create source and drains; confining polycrystalline stacks with dielectric |
| 04/25/1989 | US4824794 Method for fabricating a bipolar transistor having self aligned base and emitter |
| 04/25/1989 | US4824768 From a thermally decomposable aluminum carboxylate compound |
| 04/25/1989 | US4824073 Integrated, microminiature electric to fluidic valve |
| 04/25/1989 | CA1253262A1 Mask-surrogate semiconductor process employing dopant-opaque region |
| 04/25/1989 | CA1253261A1 Double layer dielectric passivation |
| 04/20/1989 | WO1989003589A1 Integrated circuit contact fabrication process |
| 04/20/1989 | WO1989003588A1 GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER |
| 04/20/1989 | DE3831288A1 Method for producing a semiconductor device having ohmic contact |
| 04/19/1989 | EP0312470A1 Field effect transistor structure with an isolated gate, and method of production |
| 04/19/1989 | EP0312401A2 Semiconductor devices and method of manufacturing the same |
| 04/19/1989 | EP0312389A2 A liquid-crystal panel |
| 04/19/1989 | EP0312237A2 Interface charge enhancement in delta-doped heterostructure |
| 04/19/1989 | EP0312217A1 Integrated circuit chip assembly |
| 04/19/1989 | EP0312088A2 Sensitive thyristor having improved noise-capability |
| 04/19/1989 | EP0311839A1 Turn-off semiconductor device and circuitry comprising this device |
| 04/19/1989 | EP0311816A1 Semiconductor element and its manufacturing method |
| 04/19/1989 | EP0311773A2 Non-volatile memory cell |
| 04/19/1989 | EP0311605A1 Transistor arrangement with an output transistor. |
| 04/19/1989 | EP0172193B1 Programmable read-only memory cell and method of fabrication |
| 04/18/1989 | US4823318 Driving circuitry for EEPROM memory cell |
| 04/18/1989 | US4823316 Eeprom memory cell with a single polysilicon level and a tunnel oxide zone |
| 04/18/1989 | US4823182 Semiconductor device with a diffusion barrier contact of a refractory metal nitride and either carbon or boron |
| 04/18/1989 | US4823180 Operating metal oxide semiconductor with low threshold voltage at high frequencies |
| 04/18/1989 | US4823176 Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area |
| 04/18/1989 | US4823175 Electrically alterable, nonvolatile floating gate memory device |
| 04/18/1989 | US4823174 Bipolar transistor and process of fabrication thereof |
| 04/18/1989 | US4823173 High voltage lateral MOS structure with depleted top gate region |
| 04/18/1989 | US4823172 Vertical MOSFET having Schottky diode for latch-up prevention |
| 04/18/1989 | US4823171 Alternate layers of indium and gallium arsenides, doped in the gallium side |
| 04/18/1989 | US4822757 Semiconductor device and method of manufacturing the same |
| 04/18/1989 | US4822755 Using reactive ion etching and orientation dependent etching to form chips with planar butting surfaces |
| 04/18/1989 | US4822754 Fabrication of FETs with source and drain contacts aligned with the gate electrode |
| 04/18/1989 | US4822752 Process for producing single crystal semiconductor layer and semiconductor device produced by said process |
| 04/18/1989 | US4822751 Method of producing a thin film semiconductor device |
| 04/18/1989 | US4822749 Depositing and patterning nucelation layer between two tungsten layers |
| 04/18/1989 | US4822673 Substrate with pattern of metal particles |
| 04/18/1989 | US4822581 Catenated phosphorus materials and their preparation |
| 04/18/1989 | CA1252915A1 Method of manufacturing a semiconductor device |
| 04/18/1989 | CA1252914A1 Field effect transistor |
| 04/18/1989 | CA1252913A1 Vertical field effect transistor |
| 04/18/1989 | CA1252911A1 Integrated circuit with channel length indicator |
| 04/13/1989 | DE3821460A1 Power semiconductor element and method for producing it |
| 04/13/1989 | DE3732210A1 Asymmetric thyristor |
| 04/12/1989 | EP0311529A2 Image sensor having charge storage regions |
| 04/12/1989 | EP0311419A2 Semiconductor device having bipolar transistor and method of producing the same |
| 04/12/1989 | EP0311406A2 Transmisson line |
| 04/12/1989 | EP0311320A2 Outlet device for coin payout hoppers |
| 04/12/1989 | EP0311245A2 Semi-conductor devices having a great radiation tolerance |
| 04/12/1989 | EP0311109A2 Method of manufacturing a field-effect transistor having a junction gate |
| 04/12/1989 | EP0310836A2 Semiconductor element with a planar p-n junction |
| 04/12/1989 | EP0310797A1 Merged complementary bipolar and MOS means and method |