Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1989
09/26/1989US4869781 Method for fabricating a semiconductor integrated circuit structure having a submicrometer length device element
09/26/1989US4869576 Liquid-crystal display device employing a common electrode consisting of interconnected common electrode sections
09/26/1989US4869107 Acceleration sensor for use in automotive vehicle
09/26/1989CA1261977A1 Field effect transistor
09/26/1989CA1261953A1 Method for fabricating electronic circuits based on thin film transistors and capacitors
09/26/1989CA1261952A1 Liquid crystal and diode array display screen fabrication method
09/26/1989CA1261450A1 Avalanche photodiode with double guard ring
09/26/1989CA1261074A1 Artificial semiconductor electron amplifying element
09/26/1989CA1261041A1 Solid-state threshold devices using punch-through
09/26/1989CA1260626A1 Delta-doped metal to semiconductor ohmic contacts
09/26/1989CA1260561A1 Semiconductor device
09/26/1989CA1260364A1 Nitrided silicon dioxide layers for semiconductor integrated circuits
09/21/1989WO1989008928A1 High power transistor with voltage, current, power, resistance, and temperature sensing capability
09/21/1989DE3808251A1 Semiconductor substrate having at least one monolithically integrated circuit
09/20/1989EP0333583A2 Method of producing a semiconductor device
09/20/1989EP0333563A1 Electric power supply control unit for a charge in an intellegent integrated power circuit
09/20/1989EP0333447A1 Method of manufacturing a MOS type semiconductor device
09/20/1989EP0333426A2 Dynamic RAM
09/20/1989EP0333260A1 Charge-coupled device
09/20/1989EP0333208A2 Thin film transistor with an amorphous carbon light protection and method to make this light protection
09/20/1989EP0333151A2 Thin film transistor
09/20/1989EP0332955A2 Thyristor having a large forward and reverse blocking capability, and method of making the same
09/20/1989EP0332822A1 Field-effect-controlled bipolar power semiconductor device, and method of making the same
09/20/1989EP0332680A1 Process of forming a t-gate metal structure on a substrate
09/20/1989EP0332658A1 Enhanced density modified isoplanar process.
09/19/1989US4868921 High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
09/19/1989US4868920 MESFET device formed on a semi-insulative substrate
09/19/1989US4868855 Charge-coupled semiconductor device and image sensor device of high information density
09/19/1989US4868705 Insulated-gate semicustom integrated circuit
09/19/1989US4868703 Solid state switching device
09/19/1989US4868665 Charge-coupled device with varible storage capacity and constant clock frequency
09/19/1989US4868636 Power thyristor
09/19/1989US4868633 Tungsten silicide used as growth mask and electrical contact
09/19/1989US4868632 Silicon nitride insulating film having excess silicon in portion away from interfaces; increased erasing speed
09/19/1989US4868631 Bipolar transistor with shallow junctions and capable of high packing density
09/19/1989US4868629 Self-aligned split gate EPROM
09/19/1989US4868626 Semiconductor device
09/19/1989US4868625 Gate turn-off thyristor of multi-emitter type
09/19/1989US4868624 Channel collector transistor
09/19/1989US4868621 Input protection circuit
09/19/1989US4868620 High-voltage pull-up device
09/19/1989US4868619 Single transistor electrically programmable memory device and method
09/19/1989US4868618 Ion implanted semiconductor device
09/19/1989US4868617 Gate controllable lightly doped drain mosfet devices
09/19/1989US4868613 Microwave monolithic integrated circuit device
09/19/1989US4868612 Semiconductor device utilizing multiquantum wells
09/19/1989US4868418 Comparator circuit using resonant-tunneling transistor
09/19/1989US4868140 Semiconductor device and method of manufacturing the same
09/19/1989US4868138 Method for forming a self-aligned source/drain contact for an MOS transistor
09/19/1989US4868137 Forming gate electrode, dielectric then opening; doping
09/19/1989US4868135 Bipolar, vertical n-p-n and p-n-p junctions
09/19/1989US4868134 Impurity concentration decreases depth from surface
09/13/1989EP0332329A2 Method for making a semiconductor substrate including a strained layer superlattice structure
09/13/1989EP0332217A2 A thin-film transistor operable at high voltage and a method for manufacturing the same
09/13/1989EP0332106A2 Bi-polar transistor structure and process for producing the same
09/13/1989EP0332101A2 Semiconductor device having a region doped to a level exceeding the solubility limit
09/13/1989EP0331892A1 MOS-controlled thyristor (MCT)
09/13/1989EP0331811A2 Semiconductor devices with silicon-on-insulator structures
09/13/1989CN1035586A Large power semiconductor elements capable of shutting off and its manufacturing method
09/13/1989CN1035585A Semiconductor heterostructures
09/12/1989US4866677 Semiconductor memory device with multiple alternating decoders coupled to each word line
09/12/1989US4866567 High frequency integrated circuit channel capacitor
09/12/1989US4866500 Integrated light-triggered and light-quenched static induction thyristor and making method thereof
09/12/1989US4866497 Infra-red charge-coupled device image sensor
09/12/1989US4866496 Charger transfer device (CTD), eliminating the background level of a detected signal, detection structure and method of using such a CTD
09/12/1989US4866495 High power MOSFET and integrated control circuit therefor for high-side switch application
09/12/1989US4866493 Semiconductor memory device
09/12/1989US4866492 Vertical and lateral diffusion devices; low-resistance conductive layer connecting the source structure to a truncated source extersion underlying a dielectric gate and connecting to a channel region
09/12/1989US4866491 Heterojunction field effect transistor having gate threshold voltage capability
09/12/1989US4866490 Field effect device maintaining a high speed operation in a high voltage operation
09/12/1989US4866488 Ballistic transport filter and device
09/12/1989US4866401 High current Darlington amplifier
09/12/1989US4866315 Turn-on/off driving technique for insulated gate thyristor
09/12/1989US4866313 Cascode BiMOS driving circuit using IGBT
09/12/1989US4866004 Method of forming groove isolation filled with dielectric for semiconductor device
09/12/1989US4866003 Reducing number of hydrogen-bonded-silicons; stabilization
09/12/1989US4866001 Very large scale bipolar integrated circuit process
09/12/1989US4866000 Fabrication method for semiconductor integrated circuits
09/08/1989WO1989006444A3 Vertical power transistor and fabrication methods
09/06/1989EP0331555A1 Gettering treatment process
09/06/1989EP0331527A2 Superconductive transistor
09/06/1989EP0331482A2 Transistor structure
09/06/1989EP0331433A1 Semiconductor substrate comprising wafer substrate and compound semiconductor layer
09/06/1989EP0331418A2 Eprom programming elements
09/06/1989EP0331223A2 Process for obtaining high-voltage N channel transistors particularly for EEPROM memories with CMOS technology
09/06/1989EP0331169A1 Method of manufacturing cubic boron nitride p-n junction body
09/06/1989EP0331113A2 Semiconductor memory device
09/06/1989EP0331063A1 Bidirectional MOS switch
09/06/1989EP0185426B1 Integrated circuits comprising a protection device against electrostatic discharges
09/05/1989US4864464 Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps
09/05/1989US4864454 Means for reducing damage to JFETs from electrostatic discharge events
09/05/1989US4864382 Semiconductor device
09/05/1989US4864379 Bipolar transistor with field shields
09/05/1989US4864378 Schottky barrier infrared detector
09/05/1989US4864377 Silicon on insulator (SOI) semiconductor device
09/05/1989US4864376 Thin-film transistor and method of fabricating the same
09/05/1989US4864373 Semiconductor circuit device with voltage clamp
09/05/1989US4864372 Field effect transistor
09/05/1989US4864168 Process for controlling an optical pnpn thyristor to be driven
08/1989
08/31/1989DE3905434A1 Bipolar semiconductor switching device and method for its production
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