Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1989
11/21/1989US4882707 Non-volatile semi-conductor memory device with double gate structure
11/21/1989US4882649 Nitride/oxide/nitride capacitor dielectric
11/21/1989US4882612 Power semiconductor device
11/21/1989US4882610 Protective arrangement for MOS circuits
11/21/1989US4882609 Semiconductor devices with at least one monoatomic layer of doping atoms
11/21/1989US4882608 Multilayer semiconductor device having multiple paths of current flow
11/21/1989US4882297 Bipolar transistor
11/21/1989US4882295 Method of making a double injection field effect transistor
11/21/1989US4882292 Process for manufacturing a REFET or a CHEMFET, and the manufactured REFET or CHEMFET
11/21/1989US4882290 Semiconductor device and a method of manufacturing the same
11/15/1989EP0341964A2 Silicon micro sensor and manufacturing method therefor
11/15/1989EP0341821A2 Method of manufacturing a semiconductor device
11/15/1989EP0341730A2 Gate-controlled bidirectional semiconductor switching device
11/15/1989EP0341647A2 Non-volatile memory cell and method of producing the same
11/15/1989EP0341461A2 Process for making a bipolar integrated circuit
11/15/1989EP0341453A1 MOS semiconductor element with a high blocking voltage
11/15/1989CN1037237A High-power gate turn-off thyristors and method of producing same
11/15/1989CN1037236A Charge-coupled device
11/14/1989US4881250 Compact charge-coupled device having a conductive shielding layer
11/14/1989US4881201 Semiconductor integrated circuit device
11/14/1989US4881120 Conductive modulated MOSFET
11/14/1989US4881119 Semiconductor devices
11/14/1989US4881115 Bipolar semiconductor device having a conductive recombination layer
11/14/1989US4881112 IC with recombination layer and guard ring separating VDMOS and CMOS or the like
11/14/1989US4881111 Radiation hard, high emitter-base breakdown bipolar transistor
11/14/1989US4881108 Semiconductor device
11/14/1989US4881107 IC device having a vertical MOSFET and an auxiliary component
11/14/1989US4881106 DV/DT of power MOSFETS
11/14/1989US4881105 Integrated trench-transistor structure and fabrication process
11/14/1989US4881056 Facedown-type semiconductor pressure sensor with spacer
11/14/1989US4880753 Method of fabricating a polysilicon thin film transistor
11/08/1989EP0341221A2 Bipolar power semiconductor device and process for its manufacture
11/08/1989EP0341075A2 Symmetrical blocking high voltage breakdown semiconductor device and method of fabrication
11/08/1989EP0341003A2 Thin film semiconductor device and liquid crystal display apparatus using thereof
11/08/1989EP0341000A2 Gated turn-off semiconductor device
11/08/1989EP0340904A2 Monolithic pressure sensitive integrated circuit and a process for manufacture thereof
11/08/1989EP0340779A2 Optical quantum interference device
11/08/1989EP0340731A2 Output circuit of semiconductor integrated circuit with reduced power source line noise
11/08/1989EP0340445A1 Turn-off power semiconductor device
11/07/1989US4879584 Semiconductor device with isolation between MOSFET and control circuit
11/07/1989US4879582 Field-effect transistor
11/07/1989US4879581 Transferred electron device with periodic ballistic regions
11/07/1989US4879256 Heating
11/07/1989US4879255 Method for fabricating bipolar-MOS devices
11/07/1989US4879254 Double-diffused metal oxide semiconductor, minaturization
11/07/1989US4879252 Fewer masking steps
11/02/1989WO1989010649A1 Means for reducing damage to jfets from electrostatic discharge events
11/02/1989WO1989010631A1 Hot electron transistors
11/02/1989WO1989010567A1 Accelerometer
11/02/1989WO1989007341A3 High mobility transistor with opposed gates
11/02/1989EP0340022A1 Mechanical sensor for high temperature environments
11/02/1989EP0339981A2 Laminated semiconductor sensor with overpressure protection
11/02/1989EP0339963A2 Synchronous rectifier
11/02/1989EP0339962A2 Field effect semiconductor device
11/02/1989EP0339960A2 Bipolar transistor and method of manufacturing the same
11/02/1989EP0339912A2 Method for separating integrated circuits formed on a substrate
11/02/1989EP0339886A2 A-site substituted bismuth oxide superconductors, and devices and systems comprising such a superconductor
11/02/1989EP0339852A2 Method of fabricating a layer on a substrate
11/02/1989EP0339741A2 Process of manufacturing a polycrystalline semiconductor resistance of silicon on a silicon substrate
11/02/1989EP0339732A1 Process for forming an integrated circuit on an N type substrate comprising PNP and NPN transistors placed vertically and insulated one from another
11/02/1989EP0339586A2 Semiconductor device having improved gate capacitance and manufacturing method therefor
11/02/1989EP0339386A2 Bipolar transistor structure for use as a photodetector
11/02/1989EP0339322A2 High-voltage integrated circuit with junction isolation
11/02/1989EP0204752B1 Process for forming diffusion regions in a semiconductor substrate
11/01/1989CN1005668B Trench capacitor process for high density dynamic ram
10/1989
10/31/1989US4878202 Charge-coupled device
10/31/1989US4878199 Semiconductor memory device
10/31/1989US4878164 Power supply gradually developing an output voltage when switched on
10/31/1989US4878104 Optically pumped quantum coupled devices
10/31/1989US4878103 Charge transfer memory and fabrication method thereof
10/31/1989US4878102 Charge-coupled device
10/31/1989US4878101 Single transistor cell for electrically-erasable programmable read-only memory and array thereof
10/31/1989US4878100 Triple-implanted drain in transistor made by oxide sidewall-spacer method
10/31/1989US4878096 Semiconductor device IC with DMOS using self-aligned back gate region
10/31/1989US4878095 Semiconductor device in particular a hot electron transistor
10/31/1989US4878015 Sensors for selectively determining liquid-phase or gas-phase components using a heteropolysiloxane sensitive layer
10/31/1989US4877755 Method of forming silicides having different thicknesses
10/31/1989US4877754 Method of manufacturing semiconductor device
10/31/1989US4877749 Method of forming a low loss FET
10/25/1989EP0338822A2 A liquid crystal active-matrix display device
10/25/1989EP0338766A1 Method of fabricating an active matrix substrate
10/25/1989EP0338631A1 Device and method of manufacturing a device
10/25/1989EP0338516A2 Power MOSFET having a current sensing element of high accuracy
10/25/1989EP0338375A1 Semiconductor material having periodic arrangement of impurities
10/25/1989EP0338312A2 Insulated gate bipolar transistor
10/25/1989EP0338251A1 Method of manufacturing metal-semiconductor field effect transistors
10/25/1989EP0338158A2 Ferroelectric retention method
10/25/1989EP0338157A2 Charged magnified dram cell
10/25/1989EP0168432B1 Semiconductor structure with resistive field shield
10/25/1989CN1036666A Fiel-effect controllable bipolar-type power semiconductor device and its manufacturing method
10/24/1989US4876584 Electrostatic discharge protection circuit
10/24/1989US4876583 Radiation-induced substrate photo-current compensation apparatus
10/24/1989US4876582 Crystallized silicon-on-insulator nonvolatile memory device
10/24/1989US4876581 Field effect transistor with short channel length and process of fabrication thereof
10/24/1989US4876580 Tunnel injection controlling type semiconductor device controlled by static induction effect
10/24/1989US4876579 Low top gate resistance JFET structure
10/24/1989US4876213 Salicided source/drain structure
10/24/1989US4876212 Concurrent forming p-n-p and n-p-n transistors on the same substrate
10/24/1989US4876211 Method for fabricating varactor diodes using ion implanation
10/24/1989US4875613 Apparatus for manufacturing a laminar bond
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