| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/27/1988 | US4774200 Schottky-gate field effect transistor and method for producing the same |
| 09/27/1988 | US4774199 Charge transfer device and process of manufacturing the same |
| 09/27/1988 | US4774198 Semiconductors |
| 09/27/1988 | US4774197 Method of improving silicon dioxide |
| 09/27/1988 | CA1242533A1 High breakdown voltage semiconductor device |
| 09/21/1988 | EP0283278A2 Compound semiconductor device having nonalloyed ohmic contacts |
| 09/21/1988 | EP0283276A2 Semiconductor device having heterojunction and method for producing same |
| 09/21/1988 | EP0283135A1 Fabrication of semiconductor structure |
| 09/21/1988 | EP0283066A1 Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors |
| 09/21/1988 | EP0282781A1 Contact to gallium-arsenide and method of forming such |
| 09/21/1988 | EP0282734A1 Integrated controlled power MOSFET |
| 09/21/1988 | EP0282705A2 FET structure arrangement having low on resistance |
| 09/21/1988 | EP0282557A1 Output circuit for image sensor. |
| 09/21/1988 | EP0282520A1 Non-volatile memory with floating grid and without thick oxide. |
| 09/20/1988 | US4772934 Delta-doped ohmic metal to semiconductor contacts |
| 09/20/1988 | US4772932 Bipolar transistor and including gas layers between the emitter and base and the base and collector |
| 09/20/1988 | US4772928 Electric transducer for measuring mechanical quantities |
| 09/20/1988 | US4772927 Thin film FET doped with diffusion inhibitor |
| 09/20/1988 | US4772926 Insulated gate static induction type thyristor |
| 09/20/1988 | US4772925 High speed switching field effect transistor |
| 09/20/1988 | US4772924 Device having strain induced region of altered bandgap |
| 09/20/1988 | US4772571 Annealing, metallization, nondiffusion of silicon |
| 09/20/1988 | US4772570 Improved interface characteristics |
| 09/20/1988 | US4772568 Shared active regions; compactness |
| 09/20/1988 | US4772566 Patterning, masking, etching, doping |
| 09/20/1988 | CA1242287A1 Semiconductor device exhibiting negative transconductance |
| 09/15/1988 | DE3807433A1 Verfahren zur herstellung von mos-halbleiter-bauteilen A process for producing MOS semiconductor devices |
| 09/14/1988 | EP0282407A2 Semiconductor device utilizing multiquantum wells |
| 09/14/1988 | EP0282350A2 High frequency power amplifier having heterojunction bipolar transistor |
| 09/14/1988 | EP0282150A2 Improved CCD sensor |
| 09/14/1988 | EP0282137A2 EPROM memory cell with two symmetrical half-cells and separate floating gates |
| 09/14/1988 | EP0282023A2 Semiconductor memory device |
| 09/14/1988 | EP0282022A2 Semiconductor memory device |
| 09/14/1988 | EP0281739A2 Semiconductor device comprising a thyristor |
| 09/14/1988 | EP0281597A1 Nonvolatile memory cell array. |
| 09/14/1988 | EP0281552A1 Integrated circuits |
| 09/14/1988 | CN87101229A Complementary lateral insulated gate rectifiers |
| 09/14/1988 | CN86103467B Silicon wafer reinforcing materials |
| 09/13/1988 | US4771445 Charge-coupled device having an improved input stage |
| 09/13/1988 | US4771324 Heterojunction field effect device having an implanted region within a device channel |
| 09/13/1988 | US4771322 Semiconductor memory device with low-noise structure |
| 09/13/1988 | US4771195 Integrated circuit to reduce switching noise |
| 09/13/1988 | US4771015 Vapor deposition of a band gap controlling semiconductor |
| 09/13/1988 | US4771013 Forming, etching, passivating, interconnecting; high power, voltage, analog and integral circuitry |
| 09/13/1988 | US4771012 Method of making symmetrically controlled implanted regions using rotational angle of the substrate |
| 09/13/1988 | US4771011 Ion-implanted process for forming IC wafer with buried-Zener diode and IC structure made with such process |
| 09/13/1988 | US4770948 High-purity metal and metal silicide target for LSI electrodes |
| 09/13/1988 | CA1242035A1 Amorphous hydrogenated bipolar hetero-junction transistor |
| 09/13/1988 | CA1242034A1 Controlled turn-on thyristor |
| 09/08/1988 | DE3806164A1 Semiconductor component having a high breakdown voltage |
| 09/08/1988 | DE3801525A1 Semiconductor device |
| 09/07/1988 | WO1988006804A2 Low leakage cmos/insulator substrate devices and method of forming the same |
| 09/07/1988 | WO1988006803A1 Method for electrically isolating large area electrode bodies |
| 09/07/1988 | WO1988006802A1 IMPROVED ION-IMPLANTED GaAs FIELD-EFFECT TRANSISTOR |
| 09/07/1988 | EP0281335A2 Process for producing a semiconductor article |
| 09/07/1988 | EP0281324A2 Improved passivation for integrated circuit structures |
| 09/07/1988 | EP0281310A2 Heterostructure semiconductor devices |
| 09/07/1988 | EP0281235A1 Bipolar transistor fabrication utilizing CMOS techniques |
| 09/07/1988 | EP0281032A2 Semiconductor device comprising a field effect transistor |
| 09/07/1988 | EP0280905A2 A method for manufacturing semiconductor absolute pressure sensor units |
| 09/07/1988 | CN88100466A Bipolar transistor fabrication utilizing cmos techniques |
| 09/06/1988 | US4769788 Shared line direct write nonvolatile memory cell array |
| 09/06/1988 | US4769688 Power bipolar transistor |
| 09/06/1988 | US4769687 Semiconductor device |
| 09/06/1988 | US4769686 Semiconductor device |
| 09/06/1988 | US4769685 Recessed-gate junction-MOS field effect transistor |
| 09/06/1988 | US4769683 Superlattice gate field effect transistor |
| 09/06/1988 | US4769644 Cellular automata devices |
| 09/06/1988 | US4769560 Semiconductor device having darlington-connected transistor circuit |
| 09/06/1988 | US4769340 Method for making electrically programmable memory device by doping the floating gate by implant |
| 09/06/1988 | US4769339 Method of manufacturing a field effect transistor device having a multilayer gate electrode |
| 09/06/1988 | US4769338 Silicon semiconductor body more ordered than amorphous but less ordered than single crystalline material; fast switching rates; video display |
| 09/06/1988 | CA1241770A1 Self-aligned metal silicide process for integrated circuits having self-aligned polycrystalline silicon electrodes |
| 09/06/1988 | CA1241726A1 Large scale high resolution liquid crystal display and method for production thereof |
| 08/31/1988 | EP0280536A2 Turn-on driving technique for insulated gate thyristor |
| 08/31/1988 | EP0280535A2 Conductivity-modulation metal oxide semiconductor field effect transistor |
| 08/31/1988 | EP0280370A2 Thin film transistors, display devices incorporting such transistors, and methods for their fabrication |
| 08/31/1988 | EP0280236A2 Method of manufacturing an insulated-gate semicustom integrated circuit |
| 08/31/1988 | EP0279902A2 Method of fabricating a high voltage semiconductor device |
| 08/31/1988 | CN88100934A Circuit comprising conductive line for transfer of high-speed signals |
| 08/31/1988 | CN88100903A Multi-grid electrode film transistor |
| 08/30/1988 | US4768170 MOS temperature sensing circuit |
| 08/30/1988 | US4768080 Semiconductor device having floating and control gates |
| 08/30/1988 | US4768076 Recrystallized CMOS with different crystal planes |
| 08/30/1988 | US4768074 Gallium-arsenide and gallium-aluminum-arsenide |
| 08/30/1988 | US4768071 In a field effect transistor with ultrashort gate |
| 08/30/1988 | US4767723 Process for making self-aligning thin film transistors |
| 08/30/1988 | US4767722 Method for making planar vertical channel DMOS structures |
| 08/30/1988 | US4767666 Wafer base for silicon carbide semiconductor device |
| 08/30/1988 | CA1241458A1 Side-etching method of making bipolar transistor |
| 08/30/1988 | CA1241457A1 Integrated devices having titanium carbonitride diffusion barrier layer |
| 08/30/1988 | CA1241456A1 Microwave transferred electron device |
| 08/25/1988 | WO1988006349A1 Reduction of charge transfer inefficiency in charge-coupled devices |
| 08/24/1988 | EP0279638A2 Multi-gate thin film transistor |
| 08/24/1988 | EP0279605A2 Semiconductor device |
| 08/24/1988 | EP0279588A2 Contact in a contact hole in a semiconductor and method of producing same |
| 08/24/1988 | EP0279587A2 Comparator circuit |
| 08/24/1988 | EP0279497A1 Circuit with conducting lines for the transfer of fast signals |
| 08/24/1988 | EP0279403A2 Vertical MOS field effect transistor having a high withstand voltage and a high switching speed |
| 08/24/1988 | EP0279171A1 Active matrix liquid crystal display device |