| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/31/1989 | US4801984 Semiconductor ohmic contact |
| 01/31/1989 | US4801556 Self-aligned bipolar fabrication process |
| 01/31/1989 | US4801554 Multilayer-variations in dopant concentration |
| 01/26/1989 | DE3820677A1 Field-effect controlled, bipolar power semiconductor component, and method for producing it |
| 01/25/1989 | EP0300803A2 High-frequency bipolar transistor and its fabrication method |
| 01/25/1989 | EP0300514A1 Semiconductor device with a sidelong contact structure, and its manufacture |
| 01/25/1989 | EP0300157A2 Vertical transistor capacitor memory cell structure and fabrication method therefor |
| 01/24/1989 | US4800579 Charge transfer device provided with charge detection circuit of a floating gate system |
| 01/24/1989 | US4800528 Non-volatile memory having charge correction circuitry |
| 01/24/1989 | US4800420 Two-terminal semiconductor diode arrangement |
| 01/24/1989 | US4800416 Bipolar power transistor having bypassable incorporated-base ballast resistance |
| 01/24/1989 | US4800415 Bipolar inversion channel device |
| 01/24/1989 | US4800177 Dopes, multilayer structure |
| 01/24/1989 | US4800172 Manufacturing method for cascaded junction field effect transistor |
| 01/24/1989 | EP0219543A4 Sealed cavity semiconductor pressure transducers and method. |
| 01/18/1989 | EP0299887A1 Test appliance and process for an integrated circuit so as to measure surface layer effects |
| 01/18/1989 | EP0299853A1 Process for producing a memory cell |
| 01/18/1989 | EP0299686A2 Hot electron transistor |
| 01/18/1989 | EP0299633A2 Programmable capacitance divider |
| 01/18/1989 | EP0299525A2 Semiconductor memory device with improved capacitor structure |
| 01/18/1989 | EP0299505A2 Semiconductor device and manufacturing method thereof |
| 01/18/1989 | EP0299185A2 Thin film field effect transistor |
| 01/18/1989 | EP0299087A1 Semiconductor device and method of fabricating the same |
| 01/18/1989 | EP0198040B1 Nonvolatile memory cell |
| 01/18/1989 | EP0197991B1 Method for producing electronic circuits based on thin layers transistors and capacitors |
| 01/17/1989 | US4799101 Substrate bias through polysilicon line |
| 01/17/1989 | US4799100 Method and apparatus for increasing breakdown of a planar junction |
| 01/17/1989 | US4799099 Bipolar transistor in isolation well with angled corners |
| 01/17/1989 | US4799098 MOS/bipolar device with stepped buried layer under active regions |
| 01/17/1989 | US4799095 Metal oxide semiconductor gated turn off thyristor |
| 01/17/1989 | US4799092 Integrated circuit comprising complementary field effect transistors |
| 01/17/1989 | US4799091 Quantum device output switch |
| 01/17/1989 | US4799090 Tunnel injection controlling type semiconductor device controlled by static induction effect |
| 01/17/1989 | US4799088 High electron mobility single heterojunction semiconductor devices and methods for production thereof |
| 01/17/1989 | US4799087 Field effect transistor |
| 01/17/1989 | US4799021 Method and apparatus for testing EPROM type semiconductor devices during burn-in |
| 01/17/1989 | US4798941 IC card |
| 01/17/1989 | US4798810 Method for manufacturing a power MOS transistor |
| 01/17/1989 | CA1249073A1 Integrated semiconductor circuit including a tantalum silicide diffusion barrier |
| 01/17/1989 | CA1249059A1 Charge transfer device |
| 01/17/1989 | CA1248854A1 Epitaxial compositions |
| 01/11/1989 | EP0298882A1 Protection thyristor with an auxiliary gate electrode |
| 01/11/1989 | EP0298829A1 Process to control the conduction state of a MOS transistor |
| 01/11/1989 | EP0298628A2 Field effect transistors |
| 01/11/1989 | EP0298576A1 A charge-coupled device |
| 01/11/1989 | EP0298574A1 Linear integrated resistor |
| 01/11/1989 | EP0298573A1 A charge-coupled device |
| 01/11/1989 | EP0298489A2 Semiconductor memory device having non-volatile memory transistors |
| 01/11/1989 | EP0298430A2 Semiconductor device having a floating gate |
| 01/11/1989 | CN2030761U 半导体存贮器 Semiconductor memory |
| 01/11/1989 | CN1030323A High-temp. superconducting meterial capable of being processed |
| 01/10/1989 | US4797856 Self-limiting erase scheme for EEPROM |
| 01/10/1989 | US4797727 Thyristor with aligned trigger guide |
| 01/10/1989 | US4797724 Reducing bipolar parasitic effects in IGFET devices |
| 01/10/1989 | US4797722 Hot charge-carrier transistors |
| 01/10/1989 | US4797721 Radiation hardened semiconductor device and method of making the same |
| 01/10/1989 | US4797720 Controlled breakover bidirectional semiconductor switch |
| 01/10/1989 | US4797719 MOS capacitor with direct polycrystalline contact to grooved substrate |
| 01/10/1989 | US4797718 Self-aligned silicon MOS device |
| 01/10/1989 | US4797717 Semiconductor memory device |
| 01/10/1989 | US4797716 Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields |
| 01/10/1989 | US4797371 Dopes, multilayer, diffusion |
| 01/10/1989 | US4797108 Method of manufacturing amorphous silicon field effect transistors |
| 01/05/1989 | DE3721001A1 Hochsperrendes halbleiterbauelement High-locking semiconductor component |
| 01/04/1989 | EP0298001A1 Thyristor or triac having elongate short-circuit |
| 01/04/1989 | EP0297886A2 Heterojunction bipolar transistor |
| 01/04/1989 | EP0297778A2 Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics |
| 01/04/1989 | EP0297777A2 Ferroelectric shadow ram |
| 01/04/1989 | EP0297655A1 Semiconductor device provided with a charge transfer device |
| 01/04/1989 | EP0297508A2 Complementary heterostructure semiconductor device |
| 01/04/1989 | EP0297350A2 Static ram cell with trench pull-down transistors and buried-layer ground plate |
| 01/04/1989 | EP0297335A2 Single tub transistor and method for its fabrication |
| 01/04/1989 | EP0297325A2 Gate turn-off thyristor and manufacturing method thereof |
| 01/04/1989 | CN1030144A Display device for use in the reflection mode |
| 01/03/1989 | USH569 Silicon substrate doped with oxygen-shields |
| 01/03/1989 | US4796228 Erasable electrically programmable read only memory cell using trench edge tunnelling |
| 01/03/1989 | US4796174 Direct voltage multiplier capable of being integrated into a semiconducting structure |
| 01/03/1989 | US4796082 Thermally stable ohmic contact for gallium-arsenide |
| 01/03/1989 | US4796081 Low resistance metal contact for silicon devices |
| 01/03/1989 | US4796073 Front-surface N+ gettering techniques for reducing noise in integrated circuits |
| 01/03/1989 | US4796071 Charge coupled device delay line |
| 01/03/1989 | US4796070 Lateral charge control semiconductor device and method of fabrication |
| 01/03/1989 | US4796069 Schottky diode having limited area self-aligned guard ring and method for making same |
| 01/03/1989 | US4796068 Semiconductor device having ultrahigh-mobility |
| 01/03/1989 | US4796067 Semiconductor device having a superlattice structure |
| 01/03/1989 | US4795721 Walled slot devices and method of making same |
| 01/03/1989 | US4795719 Self-aligned split gate eprom process |
| 01/03/1989 | US4795718 Self-aligned contact for MOS processing |
| 01/03/1989 | US4795717 Multilayer-doping semiconductor before applying next layer |
| 01/03/1989 | CA1248047A1 Method of making amorphous semiconductor alloys and devices using microwave energy |
| 12/29/1988 | WO1988010512A1 Semiconductor component with high blocking capacity |
| 12/29/1988 | WO1988010421A1 New membrane with selective field effect on metallic or organometallic ions and process for applying this membrane to the transistor |
| 12/29/1988 | DE3720304A1 Structured semiconductor body |
| 12/29/1988 | DE3720298A1 Metal layer arrangement for thin-film hybrid circuits |
| 12/29/1988 | DE3719743A1 Field effect transistor using planar technology, and method for producing it |
| 12/28/1988 | EP0296997A1 Power mos transistors structure |
| 12/28/1988 | EP0296925A1 High cut-off frequency bipolar transistor |
| 12/28/1988 | EP0296771A2 Semiconductor device with a buried layer, and method of manufacture |
| 12/28/1988 | EP0296718A2 A coplanar and self-aligned contact structure |
| 12/28/1988 | EP0296675A2 An integrated circuit with a protection device utilizing one or more subsurface diodes and associated method of manufacture |