| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/13/1990 | US4908682 Power MOSFET having a current sensing element of high accuracy |
| 03/13/1990 | US4908681 Insulated gate field effect transistor with buried layer |
| 03/13/1990 | US4908680 Semiconductor integrated circuit |
| 03/13/1990 | US4908679 Low resistance Schottky diode on polysilicon/metal-silicide |
| 03/13/1990 | US4908678 FET with a super lattice channel |
| 03/13/1990 | US4908518 Interline transfer CCD image sensing device with electrode structure for each pixel |
| 03/13/1990 | US4908332 Process for making metal-polysilicon double-layered gate |
| 03/13/1990 | US4908331 Method of manufacturing a semiconductor device by depositing metal on semiconductor maintained at temperature to form silicide |
| 03/13/1990 | US4908328 High voltage power IC process |
| 03/13/1990 | US4908327 Counter-doped transistor |
| 03/13/1990 | US4907861 Thin film transistor, method of repairing the film transistor and display apparatus having the thin film transistor |
| 03/08/1990 | WO1990002417A1 Charge-coupled device |
| 03/07/1990 | EP0357528A1 MOS transistor and its use in a free running diode |
| 03/07/1990 | EP0357333A2 Sealed charge storage structure |
| 03/07/1990 | EP0357248A1 Semiconductor device of the quantum interference type |
| 03/07/1990 | EP0356968A2 Three-dimensional memory element and memory device |
| 03/07/1990 | EP0356650A2 Driving circuitry for EEPROM memory cell |
| 03/07/1990 | EP0208851B1 Fabricating a semiconductor device by means of molecular beam epitaxy |
| 03/06/1990 | US4907198 Semiconductor memory device |
| 03/06/1990 | US4907197 Non-volatile semiconductor memory device |
| 03/06/1990 | US4907063 Semiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfaces |
| 03/06/1990 | US4907056 Semiconductor component comprising a planar pn-junction |
| 03/06/1990 | US4907053 Semiconductor integrated circuit |
| 03/06/1990 | US4907052 Semiconductor tandem solar cells with metal silicide barrier |
| 03/06/1990 | US4907049 Charge-coupled semiconductor device having an improved electrode structure |
| 03/06/1990 | US4907048 Double implanted LDD transistor self-aligned with gate |
| 03/06/1990 | US4907046 Semiconductor device with multilayer silicon oxide silicon nitride dielectric |
| 03/06/1990 | US4907045 Resonant-tunneling functional device using multiple negative differential resistances |
| 03/06/1990 | US4907042 Device for the multiplication of charge carriers by an avalanche phenomenon and application of the said device to photosensors, photocathodes and infrared viewing devices |
| 03/06/1990 | US4907041 Intra-gate offset high voltage thin film transistor with misalignment immunity |
| 03/06/1990 | US4907038 Langmuir Blodgett ultrathin membrane of polyfumarate |
| 03/06/1990 | US4906921 Structure and process for testing integrated circuits permitting determination of the properties of layers |
| 03/06/1990 | US4906593 Method of producing a contact plug |
| 03/06/1990 | US4906591 Method of manufacturing a semiconductor device having an electric contact portion |
| 03/06/1990 | US4906589 Inverse-T LDDFET with self-aligned silicide |
| 03/06/1990 | US4906588 Enclosed buried channel transistor |
| 03/06/1990 | US4906587 Making a silicon-on-insulator transistor with selectable body node to source node connection |
| 03/06/1990 | US4906586 Suspended gate field effect semiconductor pressure transducer device |
| 03/06/1990 | US4906584 Fast channel single phase buried channel CCD |
| 03/06/1990 | US4906583 Making a semiconductor photodetector |
| 03/01/1990 | DE3927033A1 Semiconductor component with electrode(s) on substrate surface - has four-layer electrode assembly with top and bottom electrodes sandwiching amorphous silicon and silicon insulating film |
| 03/01/1990 | DE3828885A1 Field-effect transistor |
| 02/28/1990 | EP0356346A1 Large-scale integrated EPROM device |
| 02/28/1990 | EP0356202A2 Mosfet and fabrication method |
| 02/28/1990 | EP0356062A2 MIS device |
| 02/28/1990 | EP0356039A1 MOS semiconductor integrated circuit |
| 02/28/1990 | EP0355951A2 Semiconductor device with memory cell region and a peripheral circuit and method of manufacturing the same |
| 02/28/1990 | EP0355691A2 Semiconductor device and process for producing the same |
| 02/28/1990 | EP0355657A1 Method of depositing a tungsten film |
| 02/28/1990 | EP0355619A1 Method of producing a recessed gate transistor |
| 02/28/1990 | EP0355501A2 Bipolar transistor as protection device for integrated circuits |
| 02/28/1990 | EP0355464A2 Heterojunction bipolar transistor formed on a critically misoriented substrate |
| 02/28/1990 | EP0355359A1 Turn-off semiconductor component |
| 02/28/1990 | EP0201970B1 Charge transfer device provided with inductive elements |
| 02/28/1990 | CN1040116A 垂直双极晶体管 Vertical bipolar transistor |
| 02/27/1990 | US4905314 Semiconductor integrated circuit device having an object circuit to which output voltages of the sub- and main booster circuits are applied |
| 02/27/1990 | US4905191 Microcomputer with built-in EPROM and test mode |
| 02/27/1990 | US4905072 Semiconductor element |
| 02/27/1990 | US4905071 Monolithic series-shunt diode switch |
| 02/27/1990 | US4905070 Semiconductor device exhibiting no degradation of low current gain |
| 02/27/1990 | US4905069 Darlington transistor arrangement |
| 02/27/1990 | US4905066 Thin-film transistor |
| 02/27/1990 | US4905064 Semiconductor memory device having stacked-capacitor type memory cells |
| 02/27/1990 | US4905063 Floating gate memories |
| 02/27/1990 | US4905062 Planar famos transistor with trench isolation |
| 02/27/1990 | US4905061 Schottky gate field effect transistor |
| 02/27/1990 | US4905056 Superlattice precision voltage reference |
| 02/27/1990 | US4904978 Mechanical sensor for high temperature environments |
| 02/27/1990 | US4904614 Method of manufacturing lateral IGFETS including reduced surface field regions |
| 02/27/1990 | US4904613 Method of manufacturing a DMOS device |
| 02/27/1990 | US4904612 Method for manufacturing a planar, self-aligned emitter-base complex |
| 02/27/1990 | US4904610 Mounting wafer on substrate, cutting grooves, filling with resin, curing |
| 02/27/1990 | US4904609 Method of making symmetrical blocking high voltage breakdown semiconductor device |
| 02/22/1990 | WO1990001804A1 Method and apparatus for forming a side wall contact in a nonvolatile electrically alterable memory cell |
| 02/22/1990 | WO1990001801A2 Monolithically integrated electronic apparatus |
| 02/21/1990 | EP0194265B1 Infrared optoelectronic component |
| 02/20/1990 | US4903189 Low noise, high frequency synchronous rectifier |
| 02/20/1990 | US4903117 Semiconductor device |
| 02/20/1990 | US4903115 Method of manufacturing conductive electrodes for a circuit element, and semiconductor device thus obtained |
| 02/20/1990 | US4903112 Semiconductor component with contact hole |
| 02/20/1990 | US4903109 Semiconductor devices having local oxide isolation |
| 02/20/1990 | US4903106 Semiconductor power device integrated with temperature protection means |
| 02/20/1990 | US4903105 Thyristor or triac with emitter shorting stripes |
| 02/20/1990 | US4903104 Heterojunctional collector-top type bi-polar transistor |
| 02/20/1990 | US4903099 Field effect transistor for use as ion sensor |
| 02/20/1990 | US4903098 Charge-coupled device |
| 02/20/1990 | US4903097 CCD read only memory |
| 02/20/1990 | US4903095 Integrated circuit comprising a device for protection against electrostatic discharge |
| 02/20/1990 | US4903093 Semiconductor integrated circuit device double isolated CMOS input protection resistor |
| 02/20/1990 | US4903092 Real space electron transfer device using hot electron injection |
| 02/20/1990 | US4903091 Heterojunction transistor having bipolar characteristics |
| 02/20/1990 | US4903090 Semiconductor device |
| 02/20/1990 | US4903089 Vertical transistor device fabricated with semiconductor regrowth |
| 02/20/1990 | US4903087 Schottky barrier diode for alpha particle resistant static random access memories |
| 02/20/1990 | US4903086 Varactor tuning diode with inversion layer |
| 02/20/1990 | US4902912 Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics |
| 02/20/1990 | US4902646 MESFET process employing dummy electrodes and resist reflow |
| 02/20/1990 | US4902643 Method of selective epitaxial growth for compound semiconductors |
| 02/20/1990 | US4902641 Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure |
| 02/20/1990 | US4902640 High speed double polycide bipolar/CMOS integrated circuit process |