Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1989
08/10/1989WO1989007367A2 Analog-to-digital converter made with focused ion beam technology
08/10/1989WO1989007342A1 Zener power diode
08/10/1989WO1989007341A2 High mobility transistor with opposed gates
08/10/1989WO1989007340A1 Electronic appliance
08/10/1989WO1989007333A1 Vertical transistor device fabricated with semiconductor regrowth
08/10/1989DE3901881A1 Bipolar transistor
08/10/1989DE3900254A1 Semiconductor arrangement and method for its production
08/10/1989DE3841982A1 Leistungs-zener-diode Power zener diode-
08/09/1989EP0327512A1 Power supply gradually developing an output voltage when switched on
08/09/1989EP0327475A1 Structure of a protection for the outputs of an integrated circuit of a MOS type
08/09/1989EP0327316A2 Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
08/09/1989EP0327210A1 Method of preventing silicide peel-off
08/09/1989EP0327152A1 Method of manufacturing a semiconductor device, in which metal silicide is provided in a self-registered manner
08/09/1989EP0327122A2 Complementary bipolar semiconductor device
08/09/1989EP0327121A2 Superconducting field effect transistor
08/09/1989EP0327023A2 Amorphous silicon thin film solar cell and Schottky barrier diode on a common substrate.
08/09/1989EP0326883A2 Zero power, electrically alterable, nonvolatile latch
08/09/1989EP0326879A2 Electrically-erasable, electrically-programmable read-only memory
08/09/1989EP0326877A2 Electrically-erasable, electrically-programmable read-only memory cell
08/09/1989EP0326832A1 Atomic planar-doped field-effect transistor
08/09/1989EP0326828A2 Power transistor
08/09/1989EP0326777A1 Access protection structure for integrated circuit
08/09/1989EP0213197B1 A method in the manufacture of integrated circuits
08/09/1989EP0205565B1 A microwave transferred electron device
08/09/1989EP0163729B1 Silicon gigabits per second metal-oxide-semiconductor device processing
08/08/1989US4855953 Semiconductor memory device having stacked memory capacitors and method for manufacturing the same
08/08/1989US4855950 Optical storage apparatus including a reversible, doping modulated, multilayer, amorphous element
08/08/1989US4855806 Thin film transistor with aluminum contacts and nonaluminum metallization
08/08/1989US4855805 Nonlinear semiconductor element, liquid crystal display panel using the same and their manufacturing methods
08/08/1989US4855801 Transistor varactor for dynamics semiconductor storage means
08/08/1989US4855799 Power MOS FET with carrier lifetime killer
08/08/1989US4855797 Modulation doped high electron mobility transistor with n-i-p-i structure
08/08/1989US4855796 Beam lead mixer diode
08/08/1989US4855257 Forming contacts to semiconductor device
08/08/1989US4855254 Method of growing a single crystalline β-SiC layer on a silicon substrate
08/08/1989US4855248 Method of making a semiconductor ROM device
08/08/1989US4855246 Fabrication of a gaas short channel lightly doped drain mesfet
08/08/1989US4855245 Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate
08/08/1989CA1258320A1 Small contactless ram cell
08/02/1989EP0326465A1 Floating-gate EEPROM memory with a transistor for source line selection
08/02/1989EP0326432A2 Semiconductor device having a defect-containing zone in the substrate
08/02/1989EP0326362A2 Bipolar transistor process using sidewall spacer for aligning base insert
08/02/1989EP0326218A1 Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body
08/02/1989EP0326211A1 Semiconductor device and method of manufacturing same
08/02/1989EP0326187A2 Power MOSFET structure
08/02/1989EP0325808A1 Process for producing an electric connexion on a silicon semiconductor device
08/02/1989EP0325774A1 Turn-off power semiconductor device
08/02/1989EP0325704A2 Process for the simultaneous manufacture of a plurality of semiconductor devices from a single wafer
08/01/1989USH665 Resistive field shields for high voltage devices
08/01/1989US4853895 EEPROM including programming electrode extending through the control gate electrode
08/01/1989US4853893 Data storage device and method of using a ferroelectric capacitance divider
08/01/1989US4853761 Semiconductor device
08/01/1989US4853753 Resonant-tunneling device, and mode of device operation
08/01/1989US4853348 Process for manufacture of a semiconductor memory device
08/01/1989US4853346 Ohmic contacts for semiconductor devices and method for forming ohmic contacts
08/01/1989US4853345 Process for manufacture of a vertical DMOS transistor
08/01/1989US4853343 Method for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refill
08/01/1989US4853342 Method of manufacturing semiconductor integrated circuit device having transistor
08/01/1989CA1258125A1 High-performance dram arrays including trench capacitors
07/1989
07/27/1989WO1989006863A1 Method of producing semiconductor devices
07/27/1989WO1989006862A1 Semiconductor device
07/27/1989DE3901114A1 Method for fabricating a semiconductor device
07/26/1989EP0325524A1 Charge transfer memory and method of producing it
07/26/1989EP0325383A2 Charge amplifier circuit comprising a junction field effect transistor
07/26/1989EP0325342A2 Complementary BICMOS process with isolated vertical PNP transistors
07/26/1989EP0325328A1 A method of manufacturing a semiconductor device using sputter etching
07/26/1989EP0325202A1 Method of manufacturing VLSI logic circuits in polysilicium gate NMOS fashion with an integrated EEPROM memory for tunnel current programming
07/26/1989EP0325181A2 A method of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxide
07/26/1989EP0324999A2 Semiconductor device having a constricted current path
07/26/1989EP0324929A2 Pressure connection type semiconductor device
07/26/1989EP0324743A1 High-frequency power transistor with bipolar epitaxial technology.
07/26/1989CN1034288A Semiconductor element and its mfg. method
07/25/1989US4852062 EPROM device using asymmetrical transistor characteristics
07/25/1989US4851893 Programmable active/passive cell structure
07/25/1989US4851889 Insulated gate field effect transistor with vertical channel
07/25/1989US4851888 Conductivity modulation type vertical MOS-FET
07/25/1989US4851886 Binary superlattice tunneling device and method
07/25/1989US4851370 Fabricating a semiconductor device with low defect density oxide
07/25/1989US4851369 Before the isolating layer is formed, the contact islands are covered by a metalllic later obtained by selective growth of tungsten or molybdenum; prevents damage of silicide layer
07/25/1989US4851365 Process for the production of a memory cell
07/25/1989US4851364 Method of forming well regions for field effect transistors utilizing self-aligned techniques
07/25/1989US4851363 Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses
07/25/1989US4851359 Method of producing an electrical resistor by implanting a semiconductor material with rare gas
07/25/1989US4850216 Method for accurate suction/removal detection and suction/transfer apparatus for practicing the same
07/20/1989DE3900426A1 Semiconductor arrangement
07/19/1989EP0324456A2 An output circuit of a charge transfer device
07/19/1989EP0324225A2 Gated isolation structure
07/19/1989EP0324185A2 Input protecting circuit in use with a MOS semiconductor device
07/19/1989EP0324036A1 Capacitance stabilization for A/D and D/A converters
07/18/1989US4849854 Semiconductor device and method of manufacturing the same
07/18/1989US4849802 Indium interface between refractory layer and semiconductor
07/18/1989US4849801 Semiconductor memory device having increased capacitance for the storing nodes of the memory cells
07/18/1989US4849800 Semiconductor component
07/18/1989US4849799 Resonant tunneling transistor
07/18/1989US4849797 Thin film transistor
07/18/1989US4849654 Semiconductor integrated circuit with input protection circuit
07/18/1989US4849376 Coating with refractory metal, masking, etching using carbon tetrafluoride, oxygen mixture
07/18/1989US4849369 Stacks of electroconductive gates, and dielectric material
07/18/1989US4849368 Method of producing a two-dimensional electron gas semiconductor device
07/18/1989US4849367 Method of manufacturing a DMOS
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