| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/17/1990 | EP0350670A2 Semiconductor device with a high breakdown voltage |
| 01/17/1990 | EP0350610A2 Method of forming a bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy |
| 01/17/1990 | CN1038894A Matrix display devices |
| 01/16/1990 | US4894836 Semiconductor device |
| 01/16/1990 | US4894802 Nonvolatile memory cell for eeprom including a floating gate to drain tunnel area positioned away from the channel region to prevent trapping of electrons in the gate oxide during cell erase |
| 01/16/1990 | US4894702 High efficiency, small geometry semiconductor devices |
| 01/16/1990 | US4894694 MOSFET structure and method for making same |
| 01/16/1990 | US4894692 Integrated circuit |
| 01/16/1990 | US4894691 Compound semiconductor device with superlattice channel region |
| 01/16/1990 | US4894690 Thin film transistor array incorporating a shorted circuit bypass technique |
| 01/16/1990 | US4894689 Transferred electron device |
| 01/16/1990 | US4894622 Integrated current-mirror arrangement comprising vertical transistors |
| 01/16/1990 | US4894568 Gate control circuit for a switching power MOS transistor |
| 01/16/1990 | US4894353 Method of fabricating passivated tunnel oxide |
| 01/16/1990 | US4894350 Method for manufacturing ohmic contacts having low transfer resistances |
| 01/11/1990 | WO1990000312A1 Vlsi bipolar process and keyhole transistor |
| 01/10/1990 | EP0350091A2 Tilted channel charge-coupled device |
| 01/10/1990 | EP0350086A2 Tilted channel, serial parallel-serial, charge coupled device |
| 01/10/1990 | EP0349890A2 ESD low resistance input structure |
| 01/10/1990 | EP0349790A2 Ohmic electrode for n-type GaAs and method for its manufacture |
| 01/10/1990 | EP0349775A2 Flash eeprom memory systems and methods of using them |
| 01/10/1990 | EP0349774A2 Highly compact eprom and flash eeprom divices |
| 01/10/1990 | EP0349703A2 Multilayer field-effect transistor |
| 01/10/1990 | EP0349633A1 Polysilicon thin film process |
| 01/10/1990 | CN1006428B Charge-coupled device |
| 01/10/1990 | CN1006427B Semiconductor element with two dimentional electronic gas emitter |
| 01/09/1990 | US4893275 High voltage switching circuit in a nonvolatile memory |
| 01/09/1990 | US4893273 Semiconductor memory device for storing image data |
| 01/09/1990 | US4893272 Ferroelectric retention method |
| 01/09/1990 | US4893212 Protection of power integrated circuits against load voltage surges |
| 01/09/1990 | US4893166 High value semiconductor resistor |
| 01/09/1990 | US4893165 Bipolar transistor controllable by field effect |
| 01/09/1990 | US4893164 Complementary semiconductor device having high switching speed and latchup-free capability |
| 01/09/1990 | US4893161 Quantum-well acoustic charge transport device |
| 01/09/1990 | US4893160 Method for increasing the performance of trenched devices and the resulting structure |
| 01/09/1990 | US4893159 Protected MOS transistor circuit |
| 01/09/1990 | US4893158 MOSFET device |
| 01/09/1990 | US4893156 Mos fet Device |
| 01/09/1990 | US4893155 Heterojunction field effect transistor device and process of fabrication thereof |
| 01/09/1990 | US4892844 Making a low resistance three layered contact for silicon devices |
| 01/09/1990 | US4892842 Method of treating an integrated circuit |
| 01/09/1990 | US4892841 Aluminum wire |
| 01/09/1990 | US4892839 Method of manufacturing a semiconductor device with polysilicon resistors and field plate |
| 01/09/1990 | US4892838 Method of manufacturing an insulated gate field effect transistor |
| 01/09/1990 | US4892837 Method for manufacturing semiconductor integrated circuit device |
| 01/09/1990 | US4892836 One step photolithography |
| 01/09/1990 | US4892835 Semiconductors |
| 01/09/1990 | US4892613 Process for etching light-shielding thin film |
| 01/09/1990 | US4891984 Acceleration detecting apparatus formed by semiconductor |
| 01/09/1990 | CA1264381A1 Fabrication of a bipolar transistor with a polysilicon ribbon |
| 01/04/1990 | DE3920451A1 EPROM cell having trench insulation and method for production thereof |
| 01/03/1990 | EP0349255A2 A thin-film transistor array |
| 01/03/1990 | EP0349107A2 Semiconductor devices |
| 01/03/1990 | EP0349058A1 Method of manufacturing a semiconductor device, in which during the deposition of a metal a metal silicide is formed |
| 01/03/1990 | EP0349052A2 Charge coupled device |
| 01/03/1990 | EP0349033A2 Shift register assembly |
| 01/03/1990 | EP0348998A1 Semiconductor integrated circuit including differential transistor circuit having a pair of FETs |
| 01/03/1990 | EP0348916A2 MOSFET equivalent voltage drive semiconductor device |
| 01/03/1990 | EP0348626A2 Process for fabricating isolated vertical bipolar and jfet transistors |
| 01/03/1990 | EP0348473A1 Zener diode emulation and method of forming the same |
| 01/02/1990 | US4891747 Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain |
| 01/02/1990 | US4891685 Rectifying P-N junction having improved breakdown voltage characteristics and method for fabricating same |
| 01/02/1990 | US4891684 Capacitor dielectric film |
| 01/02/1990 | US4891332 Method of manufacturing a semiconductor device comprising a circuit element formed of carbon doped polycrystalline silicon |
| 01/02/1990 | US4891329 Forming multilayer dielectric; bonding |
| 01/02/1990 | US4891327 Method for manufacturing field effect transistor |
| 01/02/1990 | US4891326 Semiconductor device and a process for manufacturing the same |
| 01/02/1990 | US4891074 Mixing band gap adjustment elements |
| 12/28/1989 | WO1989012912A1 Stress conversion device and its production method |
| 12/28/1989 | WO1989012910A1 Enclosed buried channel transistor |
| 12/27/1989 | EP0348209A2 Image display device |
| 12/27/1989 | EP0348099A2 Floating gate memories |
| 12/27/1989 | EP0348046A2 Method of producing a semiconductor device |
| 12/27/1989 | EP0347953A2 Impurity band conduction semiconductor devices |
| 12/27/1989 | EP0347778A2 Diode with a modified turn-off capability |
| 12/27/1989 | EP0347613A2 Semiconductor device with pressure connection means |
| 12/27/1989 | EP0347550A2 Process for fabricating isolated vertical and super beta bipolar transistors |
| 12/27/1989 | EP0347479A1 Semiconductor device having improved withstanding voltage characteristics |
| 12/27/1989 | CN1006266B Driving circuit for an insulated gate bipolar transitor |
| 12/27/1989 | CN1006261B Process for forming isolated silicon regions and field-effect devices on a silicon substrate |
| 12/26/1989 | US4890307 Input circuit of charge transfer device |
| 12/26/1989 | US4890192 Thin film capacitor |
| 12/26/1989 | US4890187 Integrated circuit protected against electrostatic discharges, with variable protection threshold |
| 12/26/1989 | US4890182 Circuit protection device |
| 12/26/1989 | US4890164 Image sensor having charge storage regions |
| 12/26/1989 | US4890150 Dielectric passivation |
| 12/26/1989 | US4890144 Integrated circuit trench cell |
| 12/26/1989 | US4890143 Protective clamp for MOS gated devices |
| 12/26/1989 | US4890142 Power MOS transistor structure |
| 12/26/1989 | US4890018 Bipolar-complementary metal oxide semiconductor circuit |
| 12/26/1989 | US4889831 Semiconductor device with self-alignment structure |
| 12/26/1989 | US4889827 Method for the manufacture of a MESFET comprising self aligned gate |
| 12/26/1989 | US4889826 Static induction transistor and manufacturing method of the same |
| 12/26/1989 | US4889824 Method of manufacture semiconductor device of the hetero-junction bipolar transistor type |
| 12/26/1989 | US4889823 Bipolar transistor structure for very high speed circuits and method for the manufacture thereof |
| 12/26/1989 | US4889822 Doped with phosphorus, boron, antimony |
| 12/26/1989 | US4889821 Compact transitors permits integration at high density |
| 12/26/1989 | US4889820 Method of producing a semiconductor device |
| 12/26/1989 | US4889590 Semiconductor pressure sensor means and method |
| 12/26/1989 | US4889492 Doping shallow wells in semiconductor substrate; diffusion |