H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1988
11/29/1988	US4788157 Method of fabricating a thin film transistor
11/29/1988	US4788156 Subchannel doping to reduce short-gate effects in field effect transistors
11/29/1988	US4787712 Active matrix liquid crystal display device having capacitive electrodes opposite the source buses
11/29/1988	CA1245775A1 Hot electron unipolar transistor with two- dimensional degenerate electron gas base with continuously graded composition compound emitter
11/23/1988	EP0292327A2 Electrostatic breakdown protection circuits
11/23/1988	EP0292278A1 Bipolar transistor and method for producing same
11/23/1988	EP0292270A2 Voltage detection circuit
11/23/1988	EP0292042A1 Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition
11/23/1988	EP0292015A1 Semiconductor power element
11/23/1988	EP0292011A2 Input circuit of charge transfer device
11/23/1988	EP0291951A2 A semiconductor field effect transistor using single crystalline silicon carbide as a gate insulating layer
11/23/1988	EP0291659A1 Molecular electronic element
11/23/1988	CN88102261A Gate-switching off thyristor and processes for manufacturing thereof
11/22/1988	US4786959 Gate turn-off thyristor
11/22/1988	US4786958 Lateral dual gate thyristor and method of fabricating same
11/22/1988	US4786957 Negative differential resistance element
11/22/1988	US4786955 Semiconductor device with source and drain depth extenders and a method of making the same
11/22/1988	US4786953 Vertical MOSFET and method of manufacturing the same
11/22/1988	US4786952 High voltage depletion mode MOS power field effect transistor
11/22/1988	US4786828 Bias scheme for achieving voltage independent capacitance
11/22/1988	US4786780 Method for trimming thin-film transistor array
11/22/1988	US4786614 Method of fabricating a high voltage semiconductor device having a pair of V-shaped isolation grooves
11/22/1988	US4786610 Method of making a monolithic integrated circuit comprising at least one bipolar planar transistor
11/22/1988	US4786609 Method of fabricating field-effect transistor utilizing improved gate sidewall spacers
11/22/1988	CA1245372A1 Bipolar semiconductor device and mos circuit incorporating such a device
11/22/1988	CA1245370A1 Temperature stable self-protected thyristor and method of producing
11/17/1988	WO1988009059A1 Charge-coupled device with focused ion beam fabrication
11/17/1988	WO1988009057A1 Two-terminal semiconductor diode arrangement
11/17/1988	EP0291118A1 Charge-coupled device
11/17/1988	EP0290857A1 A bias device for achieving voltage independent capacitance
11/17/1988	EP0290763A1 High performance sidewall emitter transistor
11/17/1988	EP0290672A1 A semiconductor integrated circuit device
11/17/1988	EP0165971B1 Method of making a bipolar junction transistor
11/16/1988	CN88102547A Charge-coupled device
11/15/1988	USRE32784 Conductivity modulated MOS transistor device
11/15/1988	US4785344 Semi-conductor component with contact hole
11/15/1988	US4785343 MIS FET semiconductor device with improved leakage current
11/15/1988	US4785340 Semiconductor device having doping multilayer structure
11/15/1988	US4785339 Integrated lateral PNP transistor and current limiting resistor
11/15/1988	US4784975 Increased stability and dielectrics
11/15/1988	US4784973 Titanium oxynitride as metallurgic barrier
11/15/1988	US4784971 Process for manufacturing semiconductor BICMOS device
11/15/1988	US4784968 Forming variations in doping concentrations, in semiconductor segments, then dielectric; using gate electrode for masking
11/15/1988	US4784967 Method for fabricating a field-effect transistor with a self-aligned gate
11/15/1988	US4784966 Masking segment of polysilicon, etching, doping
11/15/1988	US4784965 Source drain doping technique
11/15/1988	US4784721 Integrated thin-film diaphragm; backside etch
11/15/1988	US4784718 Method for manufacturing semiconductor device
11/15/1988	US4784702 PIN photodiode formed from an amorphous semiconductor
11/15/1988	CA1244969A1 Method for diffusing p-type material using boron disks
11/15/1988	CA1244967A1 Dielectrically isolated semiconductor devices
11/15/1988	CA1244966A1 Schottky-gate field effect transistor with trapezoidal gate
11/09/1988	EP0290268A2 Method of forming a bipolar transistor
11/09/1988	EP0289642A1 Erasable electro-optic storage disk
11/09/1988	EP0289534A1 Process for forming mos integrated circuit devices.
11/09/1988	CN87103188A Voltage-controlled semiconductor variodenser
11/08/1988	US4783766 Block electrically erasable EEPROM
11/08/1988	US4783694 Integrated bipolar-MOS semiconductor device with common collector and drain
11/08/1988	US4783692 CMOS gate array
11/08/1988	US4783690 Power semiconductor device with main current section and emulation current section
11/08/1988	US4783688 Schottky barrier field effect transistors
11/08/1988	US4783605 Logic circuit made of biomaterials such as protein films
11/08/1988	US4783427 Process for fabricating quantum-well devices
11/08/1988	US4783423 Fabrication of a semiconductor device containing deep emitter and another transistor with shallow doped region
11/08/1988	US4783422 Oxidation, making opening, vapor deposition and anisotropic etching
11/08/1988	US4783225 Wafer and method of working the same
11/08/1988	US4783147 Active matrix display screen without spurious transistor
11/08/1988	CA1244529A1 Depletion mode fet logic system
11/02/1988	EP0289343A1 Heterojunction bipolar transistors
11/02/1988	EP0289163A2 Silicide semiconductor element with polysilicon regions and method of manufacturing thereof
11/02/1988	EP0289088A1 Charge-coupled device
11/02/1988	EP0288792A1 Method for forming vias in HgCdTe
11/02/1988	EP0288712A1 Vertical ballistic transistor
11/02/1988	EP0288691A1 Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor
11/02/1988	EP0288681A1 Heterojunction bipolar transistor
11/02/1988	EP0173690B1 Thermally-activated, shorting diode switch having non-operationally-alternable junction path
11/01/1988	US4782380 Nondiffusing
11/01/1988	US4782379 Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
11/01/1988	US4782378 Transistor having integrated stabilizing resistor and method of making thereof
11/01/1988	US4782375 Integratable hall element
11/01/1988	US4782374 Charge transfer device having a width changing channel
11/01/1988	US4782372 Lateral conductivity modulated MOSFET
11/01/1988	US4782319 Pressure sensor
11/01/1988	US4782034 Semiconductors
11/01/1988	US4782033 Process for producing CMOS having doped polysilicon gate by outdiffusion of boron from implanted silicide gate
11/01/1988	US4782032 Method of making self-aligned GaAs devices having TiWNx gate/interconnect
11/01/1988	US4782031 Method of making GaAs MOSFET with low source resistance yet having satisfactory leakage current by ion-implantation
11/01/1988	CA1244149A1 Semiconductor ballistic electron velocity control structure
11/01/1988	CA1244143A1 High-performance trench capacitors for dram cells
10/1988
10/27/1988	EP0261208A4 Ambient sensing transcucer devices with isolation.
10/27/1988	DE3716470A1 Patterned semiconductor body
10/26/1988	EP0288075A2 Sub-booster circuit for stepping up an output voltage of main booster circuit
10/26/1988	EP0287931A2 Semiconductor device comprising an electrode having a composite structure
10/26/1988	EP0287856A1 Gate-controlled bi-directional semiconductor switching device
10/26/1988	EP0287811A1 Field effect transistor and method of making
10/26/1988	EP0287793A2 Integrated circuit substrate product
10/26/1988	EP0287770A1 Semiconductor component having a control electrode
10/26/1988	EP0287769A1 High speed GaAs mesfet having refractory contacts and a self-aligned cold gate fabrication process
10/26/1988	EP0287658A1 Striped-channel transistor and method of forming the same
10/26/1988	EP0287656A1 T-gate electrode for field effect transistor and field effect transistor made therewith.

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