| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/24/1976 | US3940288 Method of making a semiconductor device |
| 02/17/1976 | US3939178 Certain pyrano [3,4-b]indoles and thiopyrano[3,4-b]indoles |
| 02/17/1976 | US3938241 Vertical channel junction field-effect transistors and method of manufacture |
| 02/10/1976 | US3938178 Process for treatment of semiconductor |
| 02/10/1976 | US3938175 Polycrystalline silicon pressure transducer |
| 02/10/1976 | US3938174 Semiconductor integrated circuit and method of manufacture |
| 02/10/1976 | US3938108 Erasable programmable read-only memory |
| 02/10/1976 | US3937985 Apparatus and method for regenerating charge |
| 02/10/1976 | US3936929 Fet and bipolar device and circuit process with maximum junction control |
| 02/03/1976 | USRE28704 Semiconductor devices |
| 02/03/1976 | USRE28703 Method of manufacturing a semiconductor device |
| 02/03/1976 | US3936865 Semiconductor devices having conductor tracks at different levels and interconnections therebetween |
| 02/03/1976 | US3936863 Integrated power transistor with ballasting resistance and breakdown protection |
| 02/03/1976 | US3936862 MISFET and method of manufacture |
| 02/03/1976 | US3936861 Charge-coupled device and method of fabrication of the device |
| 02/03/1976 | US3936860 Fabrication of a semiconductor device |
| 02/03/1976 | US3936859 Semiconductor device including a conductor surrounded by an insulator |
| 02/03/1976 | US3936858 MOS transistor structure |
| 02/03/1976 | US3936857 Insulated gate field effect transistor having high transconductance |
| 02/03/1976 | US3936856 Space-charge-limited integrated circuit structure |
| 02/03/1976 | US3936492 Unsaturated quaternary ammonium compounds |
| 02/03/1976 | US3936331 Process for forming sloped topography contact areas between polycrystalline silicon and single-crystal silicon |
| 02/03/1976 | US3936329 Integral honeycomb-like support of very thin single crystal slices |
| 01/27/1976 | US3935587 High power, high frequency bipolar transistor with alloyed gold electrodes |
| 01/27/1976 | US3935586 Semiconductor device having a Schottky junction and method of manufacturing same |
| 01/27/1976 | US3935585 Semiconductor diode with voltage-dependent capacitance |
| 01/27/1976 | US3935582 Selenium rectifier |
| 01/27/1976 | US3935477 Analog inverter for use in charge transfer apparatus |
| 01/20/1976 | US3934261 Two-dimensional transfer in charge transfer devices |
| 01/20/1976 | US3933540 Bipolar transistor |
| 01/20/1976 | US3933530 Method of radiation hardening and gettering semiconductor devices |
| 01/20/1976 | US3933529 Process for the production of a pair of complementary field effect transistors |
| 01/20/1976 | US3933220 Climbing device |
| 01/13/1976 | US3932884 MIS type integrated circuit device |
| 01/13/1976 | US3932882 Charge transfer device |
| 01/13/1976 | US3932880 Semiconductor device with Schottky barrier |
| 01/13/1976 | US3932879 Bilaterally conducting zener diode and circuit therefor |
| 01/13/1976 | US3932239 Semiconductor diffusion process |
| 01/13/1976 | US3931674 Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| 01/06/1976 | US3931632 Switching device equipped with a semiconductor memory element |
| 01/06/1976 | US3930893 Conductivity connected charge-coupled device fabrication process |
| 01/06/1976 | US3930305 Method for manufacturing integrated circuits |
| 01/06/1976 | US3930300 Junction field effect transistor |