Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1989
12/26/1989US4889411 Process and structure for thin film transistor with aluminum contacts and nonaluminum metallization in liquid crystal displays
12/20/1989EP0347148A2 Semi-conductor non-volatile memory
12/20/1989EP0347111A2 Metal-semiconductor field effect transistor device
12/20/1989EP0346978A1 Integrated current-mirror arrangement comprising vertical transistors
12/20/1989EP0346632A2 Integrated trench-transistor structure and fabrication process
12/20/1989EP0346625A2 Method of forming a semiconductor integrated circuit having isolation trenches
12/20/1989EP0346569A1 Unpinned oxide-compound semiconductor structures and method of forming same
12/20/1989EP0346543A1 Bipolar transistor
12/20/1989EP0346409A1 Bipolar transistor devices and methods of making the same
12/20/1989CN1038162A Vibrating type transducer and manufacturing process thereof
12/19/1989US4888820 Multilayer plates and dielectrics, silicon nitride as barrier
12/19/1989US4888738 Current-regulated, voltage-regulated erase circuit for EEPROM memory
12/19/1989US4888633 Charge transfer device having a buried transfer channel with higher and lower concentrations
12/19/1989US4888632 Easily manufacturable thin film transistor structures
12/19/1989US4888630 Floating-gate transistor with a non-linear intergate dielectric
12/19/1989US4888627 Monolithically integrated lateral insulated gate semiconductor device
12/19/1989US4888626 Unaffected by surface charging trapping; emission
12/19/1989US4888623 Semiconductor device with PN junction isolation for TTL or ECL circuits
12/19/1989US4888306 Method of manufacturing a bipolar transistor
12/19/1989US4888246 Perovskite oxide formed by sputtering in nitrogen atmosphere
12/13/1989EP0345887A2 Matrix display devices
12/13/1989EP0345741A2 Method for manufacturing a semiconductive resistor
12/13/1989EP0345435A2 Semiconductor device with a high breakdown voltage and method for its manufacture
12/13/1989EP0345432A1 Diode for ESD protection of integrated circuits
12/13/1989EP0345380A2 Manufacture of a semiconductor device
12/12/1989US4887238 Non-volatile memory with floating grid and without thick oxide
12/12/1989US4887182 Germanium, selenium, and antimony intermetallic
12/12/1989US4887146 Semiconductor device
12/12/1989US4887145 Semiconductor device in which electrodes are formed in a self-aligned manner
12/12/1989US4887144 Topside substrate contact in a trenched semiconductor structure and method of fabrication
12/12/1989US4887141 Saturation limiting system for a vertical, isolated collector PNP transistor and monolithically integrated structure thereof
12/12/1989US4887134 Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
12/12/1989US4886985 Transistor arrangement with an output transistor
12/12/1989US4886982 Power transistor with improved resistance to direct secondary breakdown
12/12/1989US4886762 Epitaxial semiconductor in substrate of opposite electroconductivity
12/07/1989DE3916534A1 Struktur aus feldeffekt-transistor und pixelelektrode zur verwendung in fluessigkristallanzeigen und verfahren zur herstellung der struktur Structure from the field effect transistor and pixel electrode for use in fluessigkristallanzeigen and method for making the structure
12/07/1989DE3817882A1 Bipolar transistor structure having a reduced base resistance, and method for fabricating a base terminal zone for the bipolar transistor structure
12/06/1989EP0345058A2 Non-volatile static RAM circuit
12/06/1989EP0344863A1 A method of producing a thin film transistor
12/06/1989EP0344514A2 GTO thyristor
12/06/1989EP0344292A1 A process of fabricating self-aligned semiconductor devices
12/06/1989EP0344290A1 Vacuum apparatus.
12/06/1989EP0344282A1 Semi-conductive devices fabricated on soi wafers.
12/06/1989EP0344277A1 Self-aligned interconnects for semiconductor devices
12/05/1989US4885657 Thyristor with turn-off facility and overvoltage protection
12/05/1989US4885627 Method and structure for reducing resistance in integrated circuits
12/05/1989US4885624 Stacked metal-insulator semiconductor device
12/05/1989US4885623 Distributed channel-bipolar device
12/05/1989US4885621 Monolithic pressure sensitive integrated circuit
12/05/1989US4885619 HgCdTe MIS device having a CdTe heterojunction
12/05/1989US4885618 Insulated gate FET having a buried insulating barrier
12/05/1989US4885617 Metal-oxide semiconductor (MOS) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit
12/05/1989US4885616 Thin film display device with thin amorphous channel
12/05/1989US4885615 Monocrystalline three-dimensional integrated circuit
12/05/1989US4885614 Semiconductor device with crystalline silicon-germanium-carbon alloy
12/05/1989US4885259 Method of manufacturing a semiconductor device, in which metal silicide is provided in a self-registered manner
12/05/1989US4885258 Method for making a thin film transistor using a concentric inlet feeding system
12/05/1989US4885257 Heating doped semiconductor; single crystal
11/1989
11/30/1989WO1989011737A1 Electrode configuration for vibrating beam transducers
11/30/1989WO1989011734A1 Manufacture of diodes
11/30/1989WO1989011732A1 Tisi2 local interconnects
11/30/1989WO1989011731A1 Deposited tunneling oxide
11/30/1989DE3916252A1 Semiconductor device
11/30/1989DE3915634A1 Bipolar high-frequency transistor and method for producing the transistor using the polysilicon self-alignment technique
11/30/1989DE3817164A1 MOS field-effect transistor
11/29/1989EP0343977A2 Mosfet having drain voltage detection function
11/29/1989EP0343963A2 Diamond transistor and method of manufacture thereof
11/29/1989EP0343962A2 Manufacturing electronic devices
11/29/1989EP0343879A2 Bipolar transistor and method of making the same
11/29/1989EP0343797A1 Field grading extension for enhancement of blocking voltage capability of high voltage thyristor
11/29/1989EP0343667A2 Contact structure for connecting electrode to a semiconductor device and a method of forming the same
11/29/1989EP0343563A2 Bipolar transistor with a reduced base resistance, and method for the production of a base connection region for a bipolar transistor structure
11/29/1989EP0343369A1 Process for manufacturing a thyristor
11/29/1989EP0274469B1 Monolithically-integrated semiconductor devices
11/29/1989EP0192646B1 Diffusion barrier layer for integrated-circuit devices
11/29/1989CN1005943B Angular surface making process on edge of semiconductor circular chip
11/29/1989CN1005939B 半导体器件 Semiconductor devices
11/29/1989CN1005938B Semiconductor device for charge-coupled device
11/28/1989US4884239 Method for erasing data in a semiconductor memory device
11/28/1989US4884143 Lamination type solid image pick up apparatus for avoiding a narrow channel effect
11/28/1989US4884123 Contact plug and interconnect employing a barrier lining and a backfilled conductor material
11/28/1989US4884121 Semiconductor device
11/28/1989US4884120 Semiconductor device and method for making the same
11/28/1989US4884117 Circuit containing integrated bipolar and complementary MOS transistors on a common substrate
11/28/1989US4884116 Double diffused mosfet with potential biases
11/28/1989US4884114 Disconnectable thyristor
11/28/1989US4884113 Double-diffused, insulated-gate, field effect transistor
11/28/1989US4883772 Process for making a self-aligned silicide shunt
11/28/1989US4883770 Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication
11/28/1989US4883769 Method of making a multidimensional quantum-well array
11/28/1989US4883768 Multilayer, photolithography, masking
11/28/1989US4883766 Vapor deposition, multilayer
11/23/1989EP0342952A2 Topographic pattern delineated power MOSFET with profile tailored recessed source
11/23/1989EP0342925A2 Active matrix panel
11/23/1989EP0342880A2 Semiconductor non-volatile memory device
11/23/1989EP0342866A2 III-V group compounds semiconductor device Schottky contact
11/23/1989EP0342796A2 Thin-film transistor
11/23/1989EP0342778A1 Ion implanted semiconductor device
11/23/1989EP0342699A2 Semiconductor charge-coupled device
11/23/1989EP0342695A2 Semiconductor device
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