Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/1989
05/30/1989US4835416 VDD load dump protection circuit
05/30/1989US4835119 Semiconductor device and a process of producing same
05/30/1989US4835112 CMOS salicide process using germanium implantation
05/30/1989US4835111 Method of fabricating self-aligned zener diode
05/30/1989US4835059 Thin film conductor which contains silicon and germanium as major components and method of manufacturing the same
05/30/1989US4833929 Force transducer
05/30/1989CA1255015A1 Semiconductor heterojunction devices
05/24/1989EP0317445A2 Method for fabricating a silicon carbide substrate
05/24/1989EP0317442A1 Memory plane and process and prototype of definition of an electronic integrated circuit comprising such a memory plane
05/24/1989EP0317345A1 Field-effect transistor
05/24/1989EP0317324A2 Programmable semiconductor memory
05/24/1989EP0317323A2 Programmable semiconductor memory
05/24/1989EP0317257A2 Semiconductor memory device having a charge barrier layer and method for producing the same
05/24/1989EP0317152A2 Trench capacitor and method for producing the same
05/24/1989EP0317133A2 Semiconductor device for controlling supply voltage fluctuations
05/24/1989EP0317132A1 A manufacturing method of a semiconductor device
05/24/1989EP0317108A2 Programmable active/passive cell structure
05/24/1989EP0317011A2 Multi-level circuits, methods for their fabrication, and display devices incorporating such circuits
05/24/1989EP0316988A1 Lateral high-voltage transistor
05/24/1989EP0316951A1 A transistor having a low impurity-concentration base
05/24/1989EP0316881A2 Thyristor with adjustable break-over voltage
05/24/1989EP0316799A1 Semiconductor device
05/24/1989EP0316793A2 Bipolar-complementary metal oxide semiconductor circuit
05/24/1989EP0316562A2 Semiconductor bipolar transistors with base and emitter structures in a trench and process to produce same
05/24/1989EP0316414A1 Composite structure, application to a laser and process for producing same
05/24/1989EP0316401A1 Charge-coupled device with focused ion beam fabrication
05/24/1989EP0203146B1 Trench transistor
05/24/1989EP0172879B1 Nonvolatile latch
05/24/1989DE3737572A1 Controllable quantum pot structure
05/23/1989US4833646 Programmable logic device with limited sense currents and noise reduction
05/23/1989US4833518 Semiconductor memory device having improved interconnection structure of memory cell array
05/23/1989US4833517 Theta device with improved base contact
05/23/1989US4833516 High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor
05/23/1989US4833513 MOS FET semiconductor device having a cell pattern arrangement for optimizing channel width
05/23/1989US4833509 Integrated circuit reference diode and fabrication method therefor
05/23/1989US4833508 Gallium-arsenide substrate, aluminum-arsenide thin film, aluminum-gallium-arsenide layer
05/23/1989US4833099 Tungsten-silicide reoxidation process including annealing in pure nitrogen and subsequent oxidation in oxygen
05/23/1989US4833097 Shallow doping
05/23/1989US4833096 Electrically erasable programmable read-only memory-thin dielectric between floating gate and substrate
05/23/1989US4833095 Heavily doped n layers for source and drain electrodes
05/23/1989US4833042 Multilayer, diffusion barriers
05/23/1989US4832253 Method for manufacturing a laminar bond and apparatus for conducting the method
05/18/1989WO1989004555A1 Bipolar transistor devices and methods of making the same
05/18/1989WO1989004554A1 P-type buffer layers for integrated circuits
05/18/1989WO1989004496A1 Millimeter wave imaging device
05/18/1989WO1989004219A1 Method to stabilize metal contacts on mercury-cadmium-telluride alloys
05/18/1989DE3828343A1 Anordnung zur messung kleinster kapazitaetsaenderungen Arrangement for the measurement of very small kapazitaetsaenderungen
05/17/1989EP0316230A1 Phthalocyanine based organic semiconductor device
05/17/1989EP0316211A1 Integrated circuit protected against electrostatic discharges, with a variable protection threshold
05/17/1989EP0316192A2 Semi-conductor variable capacitance element
05/17/1989EP0316139A2 Resonant tunelling barrier structure device
05/17/1989EP0316033A1 Integrated digital circuit
05/17/1989EP0315980A2 Semiconductor device having conductive layers
05/16/1989US4831628 Transistors; waveguides
05/16/1989US4831431 Capacitance stabilization
05/16/1989US4831427 Ferromagnetic gate memory
05/16/1989US4831425 Integrated circuit having improved contact region
05/16/1989US4831424 Insulated gate semiconductor device with back-to-back diodes
05/16/1989US4831423 Semiconductor devices employing conductivity modulation
05/16/1989US4831422 Field effect transistor
05/16/1989US4831281 Merged multi-collector transistor
05/16/1989US4830982 Resistivity
05/16/1989US4830977 Method of making a semiconductor memory device
05/16/1989US4830975 Method of manufacture a primos device
05/16/1989US4830973 Merged complementary bipolar and MOS means and method
05/16/1989US4830972 !semiconductors, ultra-miniature
05/16/1989US4830971 High speed, high density
05/10/1989EP0315424A2 Field effect transistor arrangement
05/10/1989EP0315398A2 Stacked metal-insulator semiconductor device
05/10/1989EP0315319A2 Liquid crystal display device
05/10/1989EP0315229A2 Method of manufacturing a semiconductor device with insulated-gate structure
05/10/1989EP0315213A2 Vertical mosfet device having protector
05/10/1989EP0315145A1 Four-layer power semiconductor device
05/10/1989EP0314877A1 Power high election mobility structure
05/10/1989EP0314836A1 Semiconductor device in particular a hot electron transistor
05/09/1989US4829482 Current metering apparatus for optimally inducing field emission of electrons in tunneling devices and the like
05/09/1989US4829363 Silicon semiconductors
05/09/1989US4829361 Semiconductor device
05/09/1989US4829360 Monolithic integrated semiconductor means to reduce power dissipation of a parasitic transistor
05/09/1989US4829358 Apparatus with field effect transistor having reduced channel length
05/09/1989US4829356 Lateral transistor with buried semiconductor zone
05/09/1989US4829350 Electrostatic discharge integrated circuit protection
05/09/1989US4829349 Transistor having voltage-controlled thermionic emission
05/09/1989US4829348 Disconnectable power semiconductor component
05/09/1989US4829347 Junction field effect transistors
05/09/1989US4829346 High performance and reliability
05/09/1989US4829343 Hot electron transistor
05/09/1989US4829019 Method for increasing source/drain to channel stop breakdown and decrease P+/N+ encroachment
05/09/1989US4829017 Method for lubricating a high capacity dram cell
05/09/1989US4829016 Bipolar transistor by selective and lateral epitaxial overgrowth
05/09/1989US4829015 Method for manufacturing a fully self-adjusted bipolar transistor
05/05/1989WO1989004061A1 Microelectrochemical devices and method of detecting
05/05/1989WO1989004060A1 Transistor
05/05/1989WO1989004059A1 Phantom esd protection circuit employing e-field crowding
05/05/1989WO1989004057A1 Epitaxial intermetallic contact for compound semiconductors
05/05/1989WO1989004056A1 Mosfet in silicon carbide
05/05/1989WO1989002654A3 Resonant tunneling transistor utilizing upper resonance
05/03/1989EP0314600A2 Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors
05/03/1989EP0314399A2 Buried zener diode and method of forming the same
05/03/1989EP0314344A1 A process for making a self-aligned thin film transistor
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