| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/28/1989 | US4808259 Plasma etching process for MOS circuit pregate etching utiliizing a multi-step power reduction recipe |
| 02/28/1989 | CA1250670A1 Process for producing porous refractory metal layers embedded in semiconductor devices and devices produced thereby |
| 02/28/1989 | CA1250512A1 Semiconductor substrates doped with nitrogen |
| 02/23/1989 | WO1989001704A1 Electronic and optoelectronic devices utilizing light hole properties |
| 02/23/1989 | WO1989001632A1 Process for manufacturing microsensors with integrated signal processing |
| 02/22/1989 | EP0304096A2 A method of manufacturing lateral insulated-gate field-effect transistors |
| 02/22/1989 | EP0304073A2 Method for manufacturing semiconductor device with schottky electrodes |
| 02/22/1989 | EP0304032A1 Light controlled thyristor |
| 02/22/1989 | EP0303875A2 Si crystal force transducer |
| 02/22/1989 | EP0303846A1 A charge coupled device having a parallel-serial converting portion |
| 02/22/1989 | CN1031298A Semiconductor bottom material |
| 02/21/1989 | US4807188 Nonvolatile memory device with a high number of cycle programming endurance |
| 02/21/1989 | US4807015 Adhesion with dielectric film |
| 02/21/1989 | US4807013 Polysilicon fillet |
| 02/21/1989 | US4807011 Semiconductor integrated circuit incorporating SITS |
| 02/21/1989 | US4807010 Integrated circuit in complementary circuit technology comprising a substrate bias voltage generator and a Schottky diode |
| 02/21/1989 | US4807009 Lateral transistor |
| 02/21/1989 | US4807008 Static memory cell using a heterostructure complementary transistor switch |
| 02/21/1989 | US4807005 Semiconductor device |
| 02/21/1989 | US4807004 Tin oxide CCD imager |
| 02/21/1989 | US4807003 High-reliablity single-poly eeprom cell |
| 02/21/1989 | US4807002 Mesfet transistor with gate spaced above source electrode by layer of air or the like method of fabricating same |
| 02/21/1989 | US4807001 Multilayer gallium arsenide, indium gallium arsenide, aluminum gallium arsenide |
| 02/21/1989 | US4806998 Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device |
| 02/21/1989 | US4806994 Semiconductor device |
| 02/21/1989 | US4806797 bi-CMOS buffer cascaded to CMOS driver having PMOS pull-up transistor with threshold voltage greater than VBE of bi-CMOS bipolar pull-up transistor |
| 02/21/1989 | US4806500 Method of producing a large-scale integrated MOS field-effect transistor circuit |
| 02/21/1989 | US4806499 Exposing emitter region to impurity drive-in process to diffuse phosphorus |
| 02/21/1989 | US4806498 Semiconductor charge-coupled device and process of fabrication thereof |
| 02/21/1989 | US4806497 Neutron irradiation, ion implantation electron or proton irradiation doping |
| 02/21/1989 | US4806202 Field enhanced tunnel oxide on treated substrates |
| 02/21/1989 | CA1250209A1 Method of producing ii-v compound semiconductors |
| 02/15/1989 | EP0303521A2 Superconducting device and methods of manufacturing the same |
| 02/15/1989 | EP0303435A2 Bipolar transistors |
| 02/15/1989 | EP0303248A2 Method of forming a mask pattern and recessed-gate MESFET |
| 02/15/1989 | EP0303193A2 Semiconductor integrated circuit device |
| 02/15/1989 | EP0303079A2 Semiconductor element with a Schottky contact stable at a high temperature |
| 02/15/1989 | EP0303061A2 Process for forming a planarized, metal-strapped polysilicon gate FET |
| 02/15/1989 | EP0303046A1 Gate turn-off thyristor |
| 02/15/1989 | EP0302946A1 Method for electrically isolating large area electrode bodies |
| 02/15/1989 | CN1031156A Charge-coupled device |
| 02/14/1989 | US4805141 Bipolar PROM having transistors with reduced base widths |
| 02/14/1989 | US4805138 An unerasable eprom cell |
| 02/14/1989 | US4805071 One step manufacture of high and low voltage capacitor segments |
| 02/14/1989 | US4805008 Semiconductor device having MOSFET and deep polycrystalline silicon region |
| 02/14/1989 | US4805005 Semiconductor device and manufacturing method of the same |
| 02/14/1989 | US4805004 Semiconductor device with a planar junction and self-passivating termination |
| 02/14/1989 | US4805003 GaAs MESFET |
| 02/14/1989 | US4804640 Silicon-silicon oxide-silicon and aluminum oxide-aluminum oxide regions |
| 02/14/1989 | US4804637 EEPROM memory cell and driving circuitry |
| 02/14/1989 | US4804635 Method of manufacture of galluim arsenide field effect transistors |
| 02/14/1989 | US4804634 Integrated circuit lateral transistor structure |
| 02/09/1989 | WO1989001237A1 Semiconductor base material |
| 02/09/1989 | WO1989001235A1 High effective barrier height transistor and method of making same |
| 02/08/1989 | EP0302659A1 Semiconductor memory device and process for producing same |
| 02/08/1989 | EP0302204A2 Vertical trench transistor/capacitor memory cell structure and fabrication method therefor |
| 02/08/1989 | EP0302101A1 Reduction of charge transfer inefficiency in charge-coupled devices |
| 02/07/1989 | US4803709 Elimination of KTC noise in a charge coupled device |
| 02/07/1989 | US4803706 Variable delay charge coupled device |
| 02/07/1989 | US4803662 EEPROM cell |
| 02/07/1989 | US4803541 Semiconductor device |
| 02/07/1989 | US4803539 Dopant control of metal silicide formation |
| 02/07/1989 | US4803536 Electrostatic discharge protection network for large area transducer arrays |
| 02/07/1989 | US4803535 Dynamic random access memory trench capacitor |
| 02/07/1989 | US4803534 Semiconductor device sram to prevent out-diffusion |
| 02/07/1989 | US4803533 Insulated gate device |
| 02/07/1989 | US4803532 Vertical MOSFET having a proof structure against puncture due to breakdown |
| 02/07/1989 | US4803531 Imaging charge-coupled device having an all parallel output |
| 02/07/1989 | US4803530 Semiconductor integrated circuit formed on an insulator substrate |
| 02/07/1989 | US4803529 Electrically erasable and electrically programmable read only memory |
| 02/07/1989 | US4803527 Semiconductor integrated circuit device having semi-insulator substrate |
| 02/07/1989 | US4803526 Schottky gate field effect transistor and manufacturing method |
| 02/07/1989 | US4803176 Integrated circuit structure with active device in merged slot and method of making same |
| 02/07/1989 | US4803175 Controlling defining emitter opening, doping masking, etching polysilicon |
| 02/07/1989 | US4803174 Bipolar transistor integrated circuit and method of manufacturing the same |
| 02/07/1989 | US4803172 Method of manufacturing thyristor with integrated power supply for an associated circuit |
| 02/07/1989 | US4802952 Method for manufacturing semiconductor absolute pressure sensor units |
| 02/02/1989 | DE3802065A1 Superlattice semiconductor device |
| 02/02/1989 | DE3724612A1 Method for producing a semiconductor component |
| 02/02/1989 | DE3724012A1 Patterned semiconductor body |
| 02/01/1989 | EP0301862A2 High electron mobility transistors |
| 02/01/1989 | EP0301807A2 A method of controlling an optical PNPN thyristor |
| 02/01/1989 | EP0301762A1 Ion implantation into In-based group III-V compound semiconductors |
| 02/01/1989 | EP0301761A2 Thyristors |
| 02/01/1989 | EP0301686A2 Methods of fabricating N-type and-P-type microcrystalline semiconductor alloy materials |
| 02/01/1989 | EP0301571A2 Thin film transistor array |
| 02/01/1989 | EP0301468A2 Process for fabricating complementary contactless vertical bipolar transistors |
| 02/01/1989 | EP0301463A2 Thin film silicon semiconductor device and process for producing it |
| 02/01/1989 | EP0301460A2 Ultraviolet erasable nonvolatile semiconductor device |
| 02/01/1989 | EP0301363A2 Method of manufacturing CMOS EPROM memory cells |
| 02/01/1989 | EP0301260A1 Modulation doped high electron mobility transistor with n-i-p-i structure |
| 02/01/1989 | EP0301223A2 Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure |
| 01/31/1989 | US4802123 Semiconductor integrated circuit device |
| 01/31/1989 | US4801998 EPROM device |
| 01/31/1989 | US4801995 Semiconductor device |
| 01/31/1989 | US4801993 Monolithic semiconductor structure of a heterojunction bipolar transistor and a laser |
| 01/31/1989 | US4801988 Semiconductor trench capacitor cell with merged isolation and node trench construction |
| 01/31/1989 | US4801987 Junction type field effect transistor with metallized oxide film |
| 01/31/1989 | US4801986 Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method |
| 01/31/1989 | US4801985 Monolithically integrated semiconductor device and process for fabrication |