| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/05/1990 | WO1990003650A1 Metallization systems for heater/sensor elements |
| 04/05/1990 | WO1990001801A3 Monolithically integrated electronic apparatus |
| 04/05/1990 | DE3932621A1 Semiconductor component with gate electrode - buried in groove of substrate element zone, with two=part source and drain zones |
| 04/05/1990 | DE3932277A1 Micro-electronic semiconductor device with lattice adaptation - by superlattice for contact area between them and with alternative material removed where devices are made in one of materials |
| 04/05/1990 | DE3927307A1 Short circuit protected transistor circuit - includes MOSFET and parallel resistance between control connection for auxiliary IGBT and one main connection |
| 04/04/1990 | EP0362104A1 Bipolar transistor integrated circuit technology |
| 04/04/1990 | EP0362080A1 Monolithic bidirectional switch with MOS power transistors |
| 04/04/1990 | EP0361759A2 Heterostructure bipolar transistor |
| 04/04/1990 | EP0361609A2 Thin-film transistors, their method of manufacture, and display device using such transistors |
| 04/04/1990 | EP0361589A1 Segmented-anode lateral insulated-gate bipolar transistor devices |
| 04/04/1990 | EP0361572A1 Method for producing conducting layers on semiconductor substrates |
| 04/04/1990 | EP0361379A2 Precision voltage reference |
| 04/04/1990 | EP0361320A2 Power semiconducter diode |
| 04/04/1990 | EP0361319A2 Power semiconductor device |
| 04/04/1990 | EP0361318A2 Thyristor |
| 04/04/1990 | EP0361316A2 Power semiconducter diode |
| 04/04/1990 | EP0361121A2 Semiconductor IC device with improved element isolating scheme |
| 04/04/1990 | EP0361078A2 Method of producing a semiconductor device having shallow highly doped regions |
| 04/04/1990 | EP0360998A2 Semiconductor device having improved element isolation area |
| 04/04/1990 | EP0360992A2 A method of making a dielectric layer |
| 04/04/1990 | EP0360991A2 An integrated circuit self-protected against reversal of the supply battery polarity |
| 04/04/1990 | EP0360804A1 Heterojunction bipolar transistor. |
| 04/04/1990 | CN1041066A Semiconductor component with turn-off facility |
| 04/04/1990 | CN1007479B Thermoelectronic transistor with kinetic energy modulation |
| 04/04/1990 | CN1007478B Verical inverter circuit |
| 04/04/1990 | CN1007476B High density cmos integrated circuit manufacturing process |
| 04/03/1990 | USH763 Submicron bipolar transistor with edge contacts |
| 04/03/1990 | US4914743 Yoked orthogonally distributed equal reactance non-coplanar traveling wave amplifier |
| 04/03/1990 | US4914546 Stacked multi-polysilicon layer capacitor |
| 04/03/1990 | US4914501 Vertical contact structure |
| 04/03/1990 | US4914500 Method for fabricating semiconductor devices which include sources and drains having metal-containing material regions, and the resulting devices |
| 04/03/1990 | US4914499 Multilayer; titanium layer, zinc layer or alloy thereof; platinum, molybdenum, tungsten or chromium; gold overcoating |
| 04/03/1990 | US4914497 Semiconductor integrated circuit device provided with a capacitor element having an oxidation-resist film as a dielectric and process for manufacturing the same |
| 04/03/1990 | US4914496 Gate turn-off thyristor with independent turn-on/off controlling transistors |
| 04/03/1990 | US4914492 Insulated gate field effect transistor |
| 04/03/1990 | US4914491 Junction field-effect transistors formed on insulator substrates |
| 04/03/1990 | US4914489 Constant current semiconductor device |
| 04/03/1990 | US4914488 Compound semiconductor structure and process for making same |
| 04/03/1990 | US4914320 Speed-up circuit for NPN bipolar transistors |
| 04/03/1990 | US4914059 Process for the heat flash vapour phase deposition of an insulating layer on a III-V material substrate and its application to the production of a MIS structure |
| 04/03/1990 | US4914058 Grooved DMOS process with varying gate dielectric thickness |
| 04/03/1990 | US4914050 Semiconductor device and manufacturing method thereof |
| 04/03/1990 | US4914049 Base electrode aligned to both emitter and collector electrode |
| 04/03/1990 | US4914048 Simultaneously etching barrier and emitter on polycrystalline silicon |
| 04/03/1990 | US4914047 Windows formed in polysilicon by selective etching |
| 04/03/1990 | US4914046 Polycrystalline silicon device electrode and method |
| 04/03/1990 | US4914045 Method of fabricating packaged TRIAC and trigger switch |
| 04/03/1990 | US4914043 Method of making an integrated light-triggered and light-quenched static induction thyristor |
| 04/03/1990 | US4913674 Liquid crystal display devices and their method of manufacture |
| 04/03/1990 | CA1267444A1 Bicmos process having narrow bipolar emitter and implanted aluminum isolation |
| 03/28/1990 | EP0360504A2 One transistor flash eprom cell |
| 03/28/1990 | EP0360288A2 EPROM erasable by UV radiation having redundant circuit |
| 03/28/1990 | EP0360050A1 Process for manufacturing a GTO thyristor |
| 03/28/1990 | EP0360036A2 Planar pn-junction having a high withstand voltage |
| 03/28/1990 | EP0359994A1 Controllable power semiconductor device |
| 03/28/1990 | EP0359852A1 Process for manufacturing shallow doped regions having a low layer resistivity in a silicon substrate |
| 03/28/1990 | EP0223780B1 Method for producing mos transistors having metal silicide electrodes |
| 03/28/1990 | CN2055292U High-voltage transistor with one-layer lining structure |
| 03/28/1990 | CN1007389B 半导体器件 Semiconductor devices |
| 03/27/1990 | US4912543 Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy |
| 03/27/1990 | US4912541 Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication |
| 03/27/1990 | US4912539 Narrow-band-gap base transistor structure with dual collector-base barrier including a graded barrier |
| 03/27/1990 | US4912538 Structured semiconductor body |
| 03/27/1990 | US4912534 Nonvolatile semiconductor memory device |
| 03/27/1990 | US4912531 Three-terminal quantum device |
| 03/27/1990 | US4912055 Doping; overcoating with oxide forming barriers; forming nitride; etching |
| 03/27/1990 | US4912053 Ion implanted JFET with self-aligned source and drain |
| 03/21/1990 | EP0359680A1 Integretable active diode |
| 03/21/1990 | EP0359679A1 Method of producing a diode for control and protection |
| 03/21/1990 | EP0359530A2 Capacitive reduction of junctions in a semiconductor device |
| 03/21/1990 | EP0359528A2 High-voltage thin-film transistors |
| 03/21/1990 | EP0359508A2 Sequential-quenching resonant-tunneling transistor |
| 03/21/1990 | EP0359202A1 Compound semiconductor device having phosphorus-containing surface protective film and method of fabricating same |
| 03/21/1990 | CN1007305B Method of making monolithic integrated circuit comprising at least one bipolar planar transistor |
| 03/20/1990 | US4910707 EEPROM with protective circuit |
| 03/20/1990 | US4910583 Semiconductor body with heat sink |
| 03/20/1990 | US4910578 Semiconductor device having a metal electrode interconnection film with two layers of silicide |
| 03/20/1990 | US4910573 Gate turn-off thyristor and method of producing same |
| 03/20/1990 | US4910572 Semiconductor device and method of fabricating the same |
| 03/20/1990 | US4910569 Charge-coupled device having improved transfer efficiency |
| 03/20/1990 | US4910565 Electrically erasable and electrically programmable read-only memory |
| 03/20/1990 | US4910564 Highly integrated field effect transistor and method for manufacturing the same |
| 03/20/1990 | US4910562 Field induced base transistor |
| 03/20/1990 | US4910523 Micrometer wave imaging device |
| 03/20/1990 | US4910170 Forming grooves in film |
| 03/20/1990 | US4910164 Forming masked recesses; deposit second layer; remove second layer; remove except over recesses |
| 03/20/1990 | US4910160 Masking oxide, etching, applying dopes, diffusion cycles on silicon substrate |
| 03/20/1990 | US4910159 Forming a diffused p-type secondary collector region; joining to primary collector region |
| 03/20/1990 | US4910158 Zener diode emulation and method of forming the same |
| 03/20/1990 | US4910157 Method of producing recessed gate of MESFET in compound semiconductor |
| 03/20/1990 | US4909921 Enzyme-immobilized film |
| 03/20/1990 | CA1266812A1 Method of fabricating a self-aligned metal- semiconductor fet |
| 03/15/1990 | DE3927679A1 Transistor with emitter layer diffused in base layers - has collector layer near base layer, but spaced from emitter layer with sectional main region |
| 03/15/1990 | DE3831279A1 Power diode |
| 03/14/1990 | EP0358407A2 Bipolar hot electron transistor |
| 03/14/1990 | EP0358389A1 Vertical field-effect transistor having a high breakdown voltage and a small on-resistance |
| 03/14/1990 | EP0358322A2 Magnetic field sensors |
| 03/14/1990 | EP0160003B1 Mos floating gate memory cell and process for fabricating same |
| 03/13/1990 | US4908691 Selective epitaxial growth structure and isolation |
| 03/13/1990 | US4908687 Controlled turn-on thyristor |