| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/02/1990 | EP0366130A2 Linear deflection amplifier with energy recovery |
| 05/02/1990 | EP0365932A1 Semiconductor device |
| 05/02/1990 | EP0365875A2 Capped anneal |
| 05/02/1990 | EP0365857A2 Semiconductor device including a MESFET |
| 05/01/1990 | USRE33209 Monolithic semiconductor switching device |
| 05/01/1990 | US4922327 Semiconductor LDMOS device with upper and lower passages |
| 05/01/1990 | US4922319 Semiconductor programmable memory device |
| 05/01/1990 | US4922318 Bipolar and MOS devices fabricated on same integrated circuit substrate |
| 05/01/1990 | US4922315 Control gate lateral silicon-on-insulator bipolar transistor |
| 05/01/1990 | US4922314 Hot charge-carrier transistors |
| 05/01/1990 | US4922312 DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor |
| 05/01/1990 | US4922310 Field-effect transistor |
| 05/01/1990 | US4922133 Voltage detecting circuit |
| 05/01/1990 | US4921813 Method for making a polysilicon transistor |
| 05/01/1990 | US4921812 Process of fabricating field effect transistor device |
| 05/01/1990 | US4921811 Semiconductor integrated circuit device and a method for manufacturing the same |
| 04/25/1990 | EP0365493A2 Maskless formation of selfaligned contacts |
| 04/25/1990 | EP0365492A2 Process for forming self-aligned, metal-semiconductor contacts in integrated misfet structures |
| 04/25/1990 | EP0365107A2 Manufacturing method for vertically conductive semiconductor devices |
| 04/25/1990 | EP0365036A2 Thin film transistor and crossover structure for liquid crystal displays and method of making |
| 04/25/1990 | EP0365007A2 Crimp-type semiconductor device having non-alloy structure |
| 04/25/1990 | EP0364818A2 Method for making a polysilicon transistor |
| 04/25/1990 | EP0364813A2 Semiconductor memory device with memory cells including ferroelectric capacitors |
| 04/25/1990 | EP0364769A2 Semiconductor device having a gate electrode consisting of a plurality of layers |
| 04/25/1990 | EP0364762A1 Semiconductor device with optimum interlayer distance |
| 04/25/1990 | EP0364760A1 Power semiconductor diode |
| 04/25/1990 | EP0220989B1 Charge transport device and method for its production |
| 04/25/1990 | CN1007765B Controlled turn-on thyristor |
| 04/24/1990 | US4920445 Junction-breakdown protection semiconductor device |
| 04/24/1990 | US4920401 Bipolar transistors |
| 04/24/1990 | US4920400 Semiconductor device |
| 04/24/1990 | US4920397 Structure of complementary field effect transistor |
| 04/24/1990 | US4920395 High sensitivity photodiode |
| 04/24/1990 | US4920393 Insulated-gate field-effect semiconductor device with doped regions in channel to raise breakdown voltage |
| 04/24/1990 | US4920392 Complementary field effect transistor and method of forming the same |
| 04/24/1990 | US4920391 Semiconductor memory device |
| 04/24/1990 | US4920390 Semiconductor memory device and method of fabricating the same |
| 04/24/1990 | US4920388 Power transistor with integrated gate resistor |
| 04/24/1990 | US4920287 Output buffer having reduced electric field degradation |
| 04/24/1990 | US4920075 A semiconductor substrate and a transparent layer; etching; thermal treating to form a curvature |
| 04/24/1990 | US4920064 Growing insulation layer on a surface of the semiconductor, doping covering and exposing one contact window |
| 04/24/1990 | US4920062 Manufacturing method for vertically conductive semiconductor devices |
| 04/18/1990 | EP0364393A2 Power semiconductor device |
| 04/18/1990 | EP0364354A1 Asymmetrical gate turn-off thyristor having anode shorts and a reduced turn-on current |
| 04/18/1990 | EP0363689A2 Semiconductor devices manufacture using selective epitaxial growth and poly-Si deposition in the same apparatus |
| 04/18/1990 | EP0363673A1 Sputter-deposited nickel layer and process for depositing same |
| 04/18/1990 | EP0363670A2 MOS field-effect transistor |
| 04/18/1990 | CN1041481A Controllable power semiconductor component |
| 04/18/1990 | CN1007681B Semiconductor integrated circuit device and method of producting same |
| 04/18/1990 | CN1007680B Integrated circuit with smooth interface over polysilicon |
| 04/18/1990 | CN1007679B Method for manufacturing semiconductor components |
| 04/17/1990 | US4918563 ECL gate array semiconductor device with protective elements |
| 04/17/1990 | US4918510 Compact CMOS device structure |
| 04/17/1990 | US4918509 Gate turn-off thyristor |
| 04/17/1990 | US4918507 Semiconductor device |
| 04/17/1990 | US4918506 Selectable resolution line-scan image sensor |
| 04/17/1990 | US4918505 Method of treating an integrated circuit to provide a temperature sensor that is integral therewith |
| 04/17/1990 | US4918503 Dynamic random access memory device having a plurality of one transistor type memory cells |
| 04/17/1990 | US4918499 Semiconductor device with improved isolation between trench capacitors |
| 04/17/1990 | US4918494 Thin film transistor |
| 04/17/1990 | US4918493 Sagfet with buffer layers |
| 04/17/1990 | US4918454 Compensated capacitors for switched capacitor input of an analog-to-digital converter |
| 04/17/1990 | US4918027 Method of fabricating semiconductor device |
| 04/17/1990 | US4918026 Process for forming vertical bipolar transistors and high voltage CMOS in a single integrated circuit chip |
| 04/17/1990 | US4917467 Active matrix addressing arrangement for liquid crystal display |
| 04/17/1990 | CA1267975A1 Charge-coupled device and method of manufacturing the same |
| 04/17/1990 | CA1267965A1 Double injection field effect transistors |
| 04/12/1990 | DE3933194A1 Formation of tungsten contacts to silicon diffused regions - reduces series resistance of contacts and results in planar surface for interconnection pattern |
| 04/12/1990 | DE3929880A1 Semi-self alignment HV MOSFET - has semiconductor body with source region of opposite conductivity extending towards body surface |
| 04/11/1990 | EP0363297A1 Improved contact stud structure for semiconductor devices |
| 04/11/1990 | EP0363238A2 Semiconductor quantum effect device having negative differential resistance characteristics |
| 04/11/1990 | EP0362961A1 A method of operating a MOS-structure and MOS-structure therefor |
| 04/11/1990 | EP0362952A1 Method of manufacturing an epitaxial indium phosphide layer on a substrate surface |
| 04/11/1990 | EP0362948A2 Matrix display device |
| 04/11/1990 | EP0362928A1 Display arrangement provided with diodes and method of manufacturing the display arrangement |
| 04/11/1990 | EP0362511A1 Method for making a contact on a semiconductor device and said device |
| 04/11/1990 | EP0362275A1 Fabrication of a semiconductor base material. |
| 04/11/1990 | CN1007567B Semiconductor device |
| 04/11/1990 | CN1007566B Charge-coupled device |
| 04/11/1990 | CN1007564B Thin-film transistor |
| 04/10/1990 | US4916716 Varactor diode |
| 04/10/1990 | US4916664 Charge duplicator for charge transfer device |
| 04/10/1990 | US4916517 Semiconductor devices |
| 04/10/1990 | US4916513 Dielectrically isolated integrated circuit structure |
| 04/10/1990 | US4916510 Thin film mesa transistor of field effect type with superlattice |
| 04/10/1990 | US4916509 Method for obtaining low interconnect resistance on a grooved surface and the resulting structure |
| 04/10/1990 | US4916508 CMOS type integrated circuit and a method of producing same |
| 04/10/1990 | US4916505 Composite unipolar-bipolar semiconductor devices |
| 04/10/1990 | US4916504 Three-dimensional CMOS inverter |
| 04/10/1990 | US4916500 MOS field effect transistor device with buried channel |
| 04/10/1990 | US4916499 Junction field effect transistor with vertical gate region |
| 04/10/1990 | US4916495 Semiconductor device with semi-metal |
| 04/10/1990 | US4916494 Monolithic integrated planar semiconductor system and process for making the same |
| 04/10/1990 | US4916090 Exposing silicon layer sandwiched between electrodes to a gas phase atmosphere containing impurities; doping |
| 04/10/1990 | US4916084 Method for manufacturing MOS semiconductor devices |
| 04/10/1990 | US4916083 Multilayer semiconductors with p and n type conductivity; doping, etching |
| 04/10/1990 | US4916082 Method of preventing dielectric degradation or rupture |
| 04/10/1990 | CA1267726A1 Electrically alterable non-volatile memory device |
| 04/05/1990 | WO1990003664A1 Pressure sensor |
| 04/05/1990 | WO1990003660A1 Low stress polysilicon microstructures |