Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/1990
05/29/1990US4929884 For controlling a load in an electrical system
05/29/1990US4929860 Electrode configuration for vibrating beam transducers
05/29/1990US4929856 Heavy-duty circuit breaker
05/29/1990US4929568 Method of isolating a top gate of a MESFET and the resulting device
05/29/1990US4929567 Method of manufacturing a self-aligned GaAs MESFET with T type tungsten gate
05/29/1990US4929563 Method of manufacturing semiconductor device with overvoltage self-protection
05/29/1990CA2004073A1 Method of forming a nonsilicon semiconductor on insulator structure
05/29/1990CA1269764A1 Method of fabricating a junction field effect transistor
05/29/1990CA1269593A1 Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper
05/23/1990EP0369895A1 EPROM memory laid out in a grid, and method for its production
05/23/1990EP0369842A1 Method for the production of a large-scale integrated circuit such as an EPROM
05/23/1990EP0369676A2 Semi-conductor non-volatile memory
05/23/1990EP0369352A1 Capacitance type accelerometer and method of manufacturing the same
05/23/1990EP0369336A2 Process for fabricating bipolar and CMOS transistors on a common substrate
05/23/1990EP0368938A1 Self-aligned, planarized contacts for semiconductor devices
05/23/1990EP0324743B1 High-frequency power transistor with bipolar epitaxial technology
05/23/1990EP0217844B1 Process for the manufacture of a display screen with liquid crystals and a diode network
05/23/1990EP0208970B1 Mofset having a thermal protection
05/23/1990EP0177513B1 Integrated circuit and method for biasing an epitaxial layer
05/23/1990EP0122918B1 Acoustic charge transport device and method
05/23/1990EP0117874B1 Semiconductor photoelectric converter
05/23/1990CN1042450A Heterojunction bipolar transistors
05/22/1990US4928267 Method of reconditioning an electronically programmable memory device
05/22/1990US4928163 Semiconductor device
05/22/1990US4928161 Thin-film transistor and wiring matrix device and its forming method
05/22/1990US4928159 Semiconductor device
05/22/1990US4928157 Protection diode structure
05/22/1990US4928156 N-channel MOS transistors having source/drain regions with germanium
05/22/1990US4928155 Lateral conductivity modulated MOSFET
05/22/1990US4928154 Improved crystallinity
05/22/1990US4927786 Process for the formation of a silicon-containing semiconductor thin film by chemically reacting active hydrogen atoms with liquefied film-forming raw material gas on the surface of a substrate
05/22/1990US4927783 Contact hole filled with conductive material and is maintained small; miniaturization
05/22/1990US4927772 Method of making high breakdown voltage semiconductor device
05/22/1990US4927471 Semiconductor substrate comprising wafer substrate and compound semiconductor layer
05/17/1990WO1990005383A1 Optical semiconductor device having a zero-crossing function
05/17/1990WO1990005377A1 Local encroachment reduction
05/17/1990DE3838355A1 Vertical transistor arrangement
05/16/1990EP0368768A1 Process for making a fast diode, and fast diode obtained by that process
05/16/1990EP0368733A1 Manufacturing process for a display device incorporating a transistor matrix array provided with a light shielding mask
05/16/1990EP0368584A2 Method of manufacturing a semiconductor wafer
05/16/1990EP0368468A2 Heterojunction semiconductor devices and methods of making the same
05/16/1990EP0368444A1 Semiconductor device, e.g. field-effect transistor, and method of producing the same
05/16/1990EP0368246A2 Insulated gate bipolar semiconductor device having a Schottky barrier layer and method of manufacturing the same
05/16/1990EP0368127A2 High-voltage semiconductor device having a rectifying barrier, and method of fabrication
05/16/1990EP0368097A2 A cross-point contact-free floating-gate memory array with silicided buried bitlines
05/16/1990EP0367927A2 Sensor arrangement
05/16/1990EP0197955B1 Method for resistor trimming by metal migration
05/16/1990CN1042273A Unstrained defect-free epitaxial mismatched heterostructures and method of fabrication
05/16/1990CN1042272A Method for producing gto thyristor
05/15/1990US4926378 Bipolar static RAM having two wiring lines for each word line
05/15/1990US4926243 High voltage MOS field effect semiconductor device
05/15/1990US4926235 Semiconductor device
05/15/1990US4926232 Resonant-tunneling bipolar transistor
05/15/1990US4926226 Magnetic field sensors
05/15/1990US4926224 Crosspoint dynamic ram cell for folded bitline array
05/15/1990US4926222 Semiconductor memory device and a method of manufacturing the same
05/15/1990US4926221 Bipolar hot electron transistor
05/15/1990US4926143 Oscillator using H-shaped single crystal silicon vibrator
05/15/1990US4926083 Optically modulated acoustic charge transport device
05/15/1990US4926074 Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor
05/15/1990US4925807 Multilayer; anisotropic etching pattern in laminate
05/15/1990CA1269162A1 Method for fabricating grib resistance active matrix display screens
05/15/1990CA1269161A1 Liquid crystal display apparatus
05/14/1990EP0368938A4 Self-aligned, planarized contacts for semiconductor devices.
05/14/1990EP0344292A4 Self-aligned semiconductor devices.
05/09/1990EP0367750A2 Process for producing a silicon membrane with controlled mechanical stress
05/09/1990EP0367708A1 Structure and process for fabricating complementary vertical transistor memory cell
05/09/1990EP0367698A2 Heretojunction bipolar transistor
05/09/1990EP0367446A1 Semiconductor commutator
05/09/1990EP0367411A2 Heterojunction semiconductor devices and methods of making the same
05/09/1990EP0367293A2 Semiconductor device with a self-aligned base, and method of manufacturing the same
05/09/1990EP0367292A2 Compound semiconductor substrate
05/09/1990EP0366939A2 A process for forming a Schottky barrier gate on gallium-arsenide
05/09/1990EP0366930A2 Semiconductor device including a MESFET
05/09/1990EP0366916A2 Shorted-anode semiconductor device and methods of making the same
05/09/1990EP0366861A1 Semiconductor ballistic transistor
05/09/1990EP0366782A1 Electrode configuration for vibrating beam transducers
05/08/1990US4924437 Erasable programmable memory including buried diffusion source/drain lines and erase lines
05/08/1990US4924340 Circuit protection device
05/08/1990US4924339 Input protecting circuit in use with a MOS semiconductor device
05/08/1990US4924288 High current-gain PNP transistor
05/08/1990US4924286 Semiconductor device
05/08/1990US4924284 Method of trench filling
05/08/1990US4924283 Heterojunction bipolar transistor and process for fabricating same
05/08/1990US4924281 Gate structure for a MOS FET
05/08/1990US4924280 Semiconductor fet with long channel length
05/08/1990US4924279 Thin film transistor
05/08/1990US4924277 MIS transistor device
05/08/1990US4923824 Simplified method of fabricating lightly doped drain insulated gate field effect transistors
05/08/1990US4923823 Depositing a high melting point metallic film, a thin high melting point metal film and an insulative film on a substrate; anisotropically etching
05/08/1990US4923822 Annealing at low temperature, etching to remove nitride layer, annealing at high temperature to form silicide
05/08/1990CA1268862A1 Method for the manufacture of complementary mos field effect transistors in vlsi technology
05/03/1990WO1990004855A1 Nonvolatile semiconductor memory and method of producing the same
05/02/1990EP0366587A2 Semiconductor devices having closely spaced device regions formed using a self aligning reverse image fabrication process
05/02/1990EP0366449A2 Address table editing system
05/02/1990EP0366424A2 Method for driving a PNPN semiconductor device
05/02/1990EP0366423A2 Manufacturing method of semiconductor non-volatile memory device
05/02/1990EP0366343A2 Integrated circuit fabrication, including low temperature method for making silicide structures
05/02/1990EP0366213A1 Darlington device with an ultra-light weight emitter speed-up transistor, and relative manufacturing method
05/02/1990EP0366146A2 Thin film transistor having memory function and method for using thin film transistor as memory element
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