| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/20/1990 | EP0373712A2 Excess voltage protection circuit |
| 06/20/1990 | EP0373698A2 Selective asperity definition technique suitable for use in fabricating floating-gate transistor |
| 06/20/1990 | EP0373631A2 MOS transistor and differential amplifier circuit with low offset |
| 06/20/1990 | EP0373602A2 Optically modulated acoustic charge transport device |
| 06/19/1990 | US4935804 Semiconductor device |
| 06/19/1990 | US4935802 EPROM IC having reduced impurity regions |
| 06/19/1990 | US4935799 Composite semiconductor device |
| 06/19/1990 | US4935798 Static induction type thyristor |
| 06/19/1990 | US4935797 Heterojunction bipolar transistors |
| 06/19/1990 | US4935796 Device for minimizing parasitic junction capacitances in an insulated collector vertical P-N-P transistor |
| 06/19/1990 | US4935793 Transfer device having self-induction members |
| 06/19/1990 | US4935791 Nonvolatile semiconductor memory device of shared contact scheme not having inclined wiring |
| 06/19/1990 | US4935790 EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit |
| 06/19/1990 | US4935789 Buried channel FET with lateral growth over amorphous region |
| 06/19/1990 | US4935644 Semiconductor integrated circuit device |
| 06/19/1990 | US4935386 Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating |
| 06/19/1990 | US4935382 Alternating group iii-v: group ii fluoride layers |
| 06/19/1990 | US4935380 Method for manufacturing semiconductor device |
| 06/19/1990 | US4935379 Semiconductor device and method of manufacturing the same |
| 06/19/1990 | US4935378 Method for manufacturing a semiconductor device having more than two conductive layers |
| 06/19/1990 | US4935377 Gallium-arsenic, aluminum and fluorinated polymer |
| 06/19/1990 | US4935376 Making silicide gate level runners |
| 06/19/1990 | US4935375 Selectively doping edge of silicon layer defining a window of an opposite conductivity type |
| 06/19/1990 | US4935095 Depositing solution of tetraethoxy silane, tetraethoxygermane, solvent, acid on wafer, spinning, baking |
| 06/19/1990 | CA2005758A1 Process for etching a metal oxyde coating and simultaneous deposition of a polymer film, application of this process to the production of a transistor |
| 06/19/1990 | CA1270580A1 Thin film electrical devices with amorphous carbon electrodes and method of making same |
| 06/14/1990 | WO1990006595A1 Ultrathin submicron mosfet with intrinsic channel |
| 06/14/1990 | WO1990006594A1 A latch up free, high voltage, cmos process for sub-half-micron devices |
| 06/14/1990 | WO1990006591A1 Single crystal semiconductor substrate articles and semiconductor devices comprising same, and method of making such substrate articles and semiconductor devices |
| 06/14/1990 | CA2005384A1 Ultra-fast high temperature rectifying diode formed in silicon carbide |
| 06/13/1990 | EP0373066A1 Symmetrical semiconductor power device and method for its manufacture |
| 06/13/1990 | EP0372820A2 Semiconducteur device having high energy sustaining capability and a temperature compensated sustaining voltage |
| 06/13/1990 | EP0372644A1 Method of manufacturing an integrated circuit including steps to make interconnections between two different levels |
| 06/13/1990 | EP0372614A1 Matrix of EPROM memory cells with a tablecloth structure having an improved capacitative ratio and a process for its manufacture |
| 06/13/1990 | EP0372476A2 Semiconductor device having a reduced parasitic capacitance and manufacturing method thereof |
| 06/13/1990 | EP0372428A1 Semiconductor device having intermediate layer for pinching off conductive path during reverse bias application |
| 06/13/1990 | EP0372412A1 A method for fabricating a semiconductor film which is electrically isolated from substrate |
| 06/13/1990 | EP0372391A2 Lateral insulated gate bipolar transistor |
| 06/13/1990 | EP0372356A2 Liquid crystal display device |
| 06/13/1990 | EP0372304A2 A stacked insulating film including yttrium oxide |
| 06/13/1990 | EP0372092A1 Stress conversion device and its production method |
| 06/13/1990 | EP0207968B1 Hot electron unipolar transistor |
| 06/13/1990 | EP0202252B1 Method for fabricating semiconductor devices and devices formed thereby |
| 06/13/1990 | CN1043040A Semiconductor device |
| 06/12/1990 | US4933904 Dense EPROM having serially coupled floating gate transistors |
| 06/12/1990 | US4933898 Secure integrated circuit chip with conductive shield |
| 06/12/1990 | US4933740 Insulated gate transistor with vertical integral diode and method of fabrication |
| 06/12/1990 | US4933737 Polysilon contacts to IC mesas |
| 06/12/1990 | US4933734 Semiconductor device having field effect transistors and manufacturing method therefor |
| 06/12/1990 | US4933733 Slot collector transistor |
| 06/12/1990 | US4933732 Heterojunction bipolar transistor |
| 06/12/1990 | US4933730 Semiconductor device having a high breakdown voltage characteristic |
| 06/12/1990 | US4933298 Method of making high speed semiconductor device having a silicon-on-insulator structure |
| 06/12/1990 | US4933297 Method for etching windows having different depths |
| 06/12/1990 | US4933296 N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
| 06/12/1990 | US4933295 Method of forming a bipolar transistor having closely spaced device regions |
| 06/12/1990 | CA1270328A1 Semiconductor memory device having stacked-capacitor type memory cells |
| 06/07/1990 | DE3939635A1 Mfg. self-aligned gallium arsenide MESFET - involves forming T=shaped tungsten gate electrode |
| 06/06/1990 | EP0371862A2 Method of forming a nonsilicon semiconductor on insulator structure |
| 06/06/1990 | EP0371785A2 Lateral conductivity modulated MOSFET |
| 06/06/1990 | EP0371686A1 Semiconductor device and method for producing same |
| 06/06/1990 | EP0371684A2 Interstitial doping in III-V semiconductors to avoid or suppress DX centre formation |
| 06/06/1990 | EP0371663A1 Integrated circuit output buffer having improved ESD protection |
| 06/06/1990 | EP0371557A2 PNP Darlington device structurally improved with regard to the integrated speed-up diode, and its manufacturing method |
| 06/06/1990 | EP0371069A1 Process for manufacturing microsensors with integrated signal processing |
| 06/06/1990 | EP0221103B1 Process for making semiconductor devices which involve gaseous etching |
| 06/05/1990 | US4931851 Gas sensitive device |
| 06/05/1990 | US4931850 Semiconductor device including a channel stop region |
| 06/05/1990 | US4931849 Semiconductor memory device with improved capacitor structure |
| 06/05/1990 | US4931848 Thyristor having increased dI/dt stability |
| 06/05/1990 | US4931847 Floating gate memory with sidewall tunnelling area |
| 06/05/1990 | US4931846 Vertical MOSFET having voltage regulator diode at shallower subsurface position |
| 06/05/1990 | US4931844 High power transistor with voltage, current, power, resistance, and temperature sensing capability |
| 06/05/1990 | US4931666 Darlington-connected semiconductor device |
| 06/05/1990 | US4931408 Method of fabricating a short-channel low voltage DMOS transistor |
| 06/05/1990 | US4931406 Method for manufacturing semiconductor devices having twin wells |
| 06/05/1990 | US4931136 Method and apparatus for manufacturing a metal contact with overhanging edges |
| 06/05/1990 | US4930929 Glass tube/stainless steel header interface for pressure sensor |
| 05/31/1990 | WO1990005996A1 Solid state, quantum mechanical, electron and hole wave devices |
| 05/31/1990 | WO1990005993A1 High performance sub-micron p-channel transistor with germanium implant |
| 05/31/1990 | DE3840228A1 Semiconductor component for bump assembly |
| 05/31/1990 | DE3840226A1 Method for producing self-aligned metallisations for FET |
| 05/30/1990 | EP0370809A2 Thin-film soi mosfet and method of manufacturing thereof |
| 05/30/1990 | EP0370416A2 Novel architecture for a flash erase EPROM memory |
| 05/30/1990 | EP0370403A2 Semiconductor having the coupled quantum box array structure |
| 05/30/1990 | EP0370308A2 Non-volatile semiconductor memory device having, at the prestage of an address decoder, a level shifter for generating a program voltage |
| 05/30/1990 | EP0231305B1 Sensors for selective determination of components in liquid or gaseous phase |
| 05/29/1990 | US4930105 Nonvolatile semiconductor memory device with a double gate structure |
| 05/29/1990 | US4930037 Input voltage protection system |
| 05/29/1990 | US4929999 Combination of a support and a semiconductor body and method of manufacturing such a combination |
| 05/29/1990 | US4929997 Heterojunction bipolar transistor with ballistic operation |
| 05/29/1990 | US4929996 Trench bipolar transistor |
| 05/29/1990 | US4929991 Rugged lateral DMOS transistor structure |
| 05/29/1990 | US4929990 Semiconductor memory device |
| 05/29/1990 | US4929989 MOS type semiconductor device potential stabilizing circuit with series MOS capacitors |
| 05/29/1990 | US4929988 Non-volatile semiconductor memory device and method of the manufacture thereof |
| 05/29/1990 | US4929987 Method for setting the threshold voltage of a power mosfet |
| 05/29/1990 | US4929986 High power diamond traveling wave amplifier |
| 05/29/1990 | US4929985 Compound semiconductor device |
| 05/29/1990 | US4929984 Semiconductors |