Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/1990
07/17/1990US4942444 Thyristor
07/17/1990US4942443 Thyristor with auxiliary emitter electrode and short-circuit regions and method
07/17/1990US4942441 Thin film semiconductor device and method of manufacturing the same
07/17/1990US4942440 High voltage semiconductor devices with reduced on-resistance
07/17/1990US4942438 Compound semiconductor field-effect transistor
07/17/1990US4942437 Electron tuned quantum well device
07/17/1990CA1271850A1 Method for fabricating a field-effect transistor with a self-aligned gate
07/12/1990WO1990007796A1 Insulator films on diamond
07/12/1990WO1990007795A1 Split-gate field effect transistor
07/12/1990WO1990007794A1 High-voltage transistor arrangement produced by cmos technology
07/12/1990WO1990007790A1 Method of forming pattern
07/12/1990DE4000219A1 Semiconductor memory with externally applied programming voltage - has programming voltage detector determining its level w.r.t. preset one
07/11/1990EP0377502A1 Integrated circuit capacitor
07/11/1990EP0377365A1 Process for etching a metal oxide layer with simultaneous deposition of a polymer film, use of this process in the production of a transistor
07/11/1990EP0377245A1 Semiconductor device and method of manufacturing a semiconductor device
07/11/1990EP0377126A2 Schottky gate field-effect semiconductor device
07/11/1990EP0377084A1 Field effect transistor on an insulator and method of manufacturing same
07/11/1990EP0205613B1 A process for forming nitrided silicon dioxide layers for semiconductor integrated circuits
07/11/1990EP0199424B1 Planar semiconductor device with a guard ring structure, family of such devices and method of manufacture
07/11/1990CN1008782B Gate-switching off thyristor and processes for manufacturing thereof
07/10/1990US4941034 Integrated semiconductor circuit
07/10/1990US4941032 Semiconductor device
07/10/1990US4941030 Semiconductor device
07/10/1990US4941027 High voltage MOS structure
07/10/1990US4941026 Semiconductor devices exhibiting minimum on-resistance
07/10/1990CA1271566A1 Process for manufacturing semiconductor bicmos devices
07/05/1990DE3943232A1 LEDs for short wavelength visible and UV light - made from hetero-junction structures of silicon-carbide with compound semiconductor materials with similar lattice-constants
07/05/1990DE3844339A1 Method for producing gate electrodes
07/04/1990EP0376777A1 Method of manufacturing a charge transfer device
07/04/1990EP0376723A2 Structure and process for producing a substrate tap in a bipolar structure and process for forming same
07/04/1990EP0376722A2 Bipolar sinker structure and process for forming same
07/04/1990EP0376437A2 An active matrix type liquid crystal display
07/04/1990EP0376290A2 Nonvolatile semiconductor memory device capable of preventing read error caused by overerase state
07/04/1990EP0376165A2 Method for manufacturing a liquid crystal display device
07/04/1990EP0376063A2 Programmable single-chip microcomputer
07/04/1990EP0375965A1 Heterojunction bipolar transistor and method of producing the same
07/04/1990EP0375915A2 A contact chain structure for troubleshooting EPROM memory circuits
07/03/1990US4939571 Insulated-gate type transistor and semiconductor integrated circuit using such transistor
07/03/1990US4939566 Semiconductor switch with parallel DMOS and IGT
07/03/1990US4939565 Semiconductor device
07/03/1990US4939564 Gate-controlled bidirectional semiconductor switching device with rectifier
07/03/1990US4939563 Double carrier deflection high sensitivity magnetic sensor
07/03/1990US4939562 Layers of group III and V intermetallics with narrowing band gaps; semiconductors
07/03/1990US4939560 Charge transfer device
07/03/1990US4939559 Dual electron injector structures using a conductive oxide between injectors
07/03/1990US4939558 EEPROM memory cell and driving circuitry
07/03/1990US4939557 (110) GaAs microwave FET
07/03/1990US4939386 Semiconductor integrated circuit device with MISFETS using two drain impurities
07/03/1990US4939154 Miniaturization; high integraiton and speed
07/03/1990US4939100 Process for the production of a MIS transistor with a raised substrate/gate dielectric interface end
07/03/1990US4938798 Silicides
07/03/1990US4938567 Electro-optical display panel with control transistors and method for making it
07/03/1990US4938565 Thin-film transistor array used for liquid-crystal display device
07/03/1990CA1271270A1 Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body
07/03/1990CA1271269A1 High speed gaas mesfet having refractory contacts and a self-aligned cold gate fabrication process
07/03/1990CA1271266A1 Vertical ballistic transistor with isolated base contact
07/03/1990CA1271140A1 Integrated, microminiature electric-to-fluidic valve and pressure/flow regulator
06/1990
06/28/1990WO1990007254A1 Thin-film electroluminescent element and method of manufacturing the same
06/28/1990WO1990007194A1 Integrated circuit comprising a vertical transistor
06/28/1990WO1990007193A1 Semiconductor device comprising an integrated circuit having a vertical transistor
06/28/1990WO1990007192A1 Ultra-fast high temperature rectifying diode formed in silicon carbide
06/28/1990DE3943013A1 Diodenvorrichtung fuer hochfrequenzanwendungen Diode device for high frequency applications
06/28/1990DE3942419A1 Semiconductor substrate having P-region and N-region - in which field electrode is formed on oxide film and overlaps both sides of junction
06/28/1990DE3936668A1 High voltage CMOS transistor arrangement - has source zone of substrate-opposed type directly surrounded by substrate
06/28/1990DE3841777A1 Semiconductor arrangement
06/27/1990EP0375585A2 Method for manufacturing a BI-CMOS device
06/27/1990EP0375564A1 Semiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereon
06/27/1990EP0375500A1 Process for producing small-sized electrodes in an integrated circuit
06/27/1990EP0375323A1 A high-performance vertical PNP transistor compatible with an advanced ECL bipolar technology and method of manufacturing same
06/27/1990EP0375268A2 Liquid crystal display device
06/27/1990EP0375233A2 Active matrix type display device
06/27/1990EP0375232A2 Growth-modified thermal oxidation process for thin oxides
06/27/1990EP0375037A2 Protection of power integrated circuits against load voltage surges
06/27/1990EP0374744A2 Microwave integrated circuit
06/27/1990EP0374544A1 A hetero bipolar transistor and a fabricating method thereof
06/27/1990EP0374408A2 Field-effect transistor and method of producing the same
06/27/1990EP0111181B1 Semiconductor component with a contact hole
06/27/1990CN1043408A Nonvolatile memory and method of manufacturing thereof
06/26/1990US4937650 Semiconductor capacitor device with dual dielectric
06/26/1990US4937648 Resistant transistor
06/26/1990US4937646 MOSFET with temperature protection
06/26/1990US4937645 Semiconductor device and a method of manufacturing the same
06/26/1990US4937644 Asymmetrical field controlled thyristor
06/26/1990US4937642 Bidirectional MOS switch
06/26/1990US4937640 Short channel MOSFET
06/26/1990US4937471 Bidirectional input-output cell
06/26/1990US4937204 Method of making a superlattice heterojunction bipolar device
06/26/1990US4937202 Anisotropically etching into substrate a recess forming source and drain regions
06/26/1990US4937075 Method of making semiconductor chip having field effect transistors which have differing threshold voltages determined in a single masking step
06/26/1990US4936956 Microelectrochemical devices based on inorganic redox active material and method for sensing
06/26/1990US4936928 Semiconductor device
06/26/1990US4936781 Method of fabrication of a P+nn+ diode and of a bipolar transistor incorporating this diode utilizing the effect of neutralization of donor atoms by atomic hydrogen
06/26/1990CA1270933A1 Bipolar inversion channel device
06/22/1990CA2005182A1 Microwave integrated circuit
06/21/1990DE3929816A1 EEPROM with NAND cell arrangement - uses memory chains of individual memory cells programmed via relatively small voltages
06/21/1990CA2005785A1 Growth-modified thermal oxidation process for thin oxides
06/20/1990EP0373893A2 MOS type field effect transistor formed on a semiconductor layer on an insulator substrate
06/20/1990EP0373830A2 Floating gate transistor
06/20/1990EP0373803A2 R. F. switching circuits
06/20/1990EP0373723A1 Method for manufacturing a MOS semiconductor device making use of a "gettering" treatment with improved characteristics, and MOS semiconductor devices obtained thereby
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