Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1990
08/14/1990US4949139 Transistor construction for low noise output driver
08/14/1990US4949137 Semiconductor device
08/14/1990US4949136 Submicron lightly doped field effect transistors
08/14/1990US4948756 Forming two openings by etching polysilicon layer and dielectric
08/14/1990US4948752 Gallium-arsenic intermetallic
08/14/1990US4948746 Isolated gate MESFET and method of making and trimming
08/14/1990US4948744 Process of fabricating a MISFET
08/14/1990US4948231 Liquid crystal display device and method of manufacturing the same
08/14/1990CA1272811A1 Semiconductor device of overvoltage self-protection type
08/09/1990DE4002435A1 Cellular power semiconductor device - has draught-board type array of N and P=type cells connected resp. to two areas by pair of conductive sheets
08/08/1990EP0381591A2 Quantum interference semiconductor device
08/08/1990EP0381404A2 Non-volatile memory
08/08/1990EP0381396A1 Compound semiconductor devices
08/08/1990EP0381280A1 Method of manufacturing an integrated circuit with a protection element
08/08/1990EP0381268A1 A field effect semiconductor device
08/08/1990EP0381139A2 Semiconductor integrated circuit and method of manufacture thereof
08/08/1990EP0381110A1 Protection layer for electroactive passivation layers
08/08/1990EP0381071A2 An improved method for forming emitters in a bicmos process
08/08/1990EP0380964A2 Method of making a semiconductor device having a contact member
08/08/1990EP0380885A1 Capacitive sensor with minimized dielectric drift
08/08/1990EP0380881A2 Protection circuit for a power mosfet driving an inductive load
08/08/1990EP0380799A1 Pressure contact semiconductor component
08/08/1990EP0197116B1 Low-leakage jfet
08/07/1990US4947234 Semiconductor component with power MOSFET and control circuit
08/07/1990US4947232 High voltage MOS transistor
08/07/1990US4947231 Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it
08/07/1990US4947230 Base-coupled transistor logic
08/07/1990US4947226 Bilateral switching device
08/07/1990US4947225 Sub-micron devices with method for forming sub-micron contacts
08/07/1990US4947222 Electrically programmable and erasable memory cells with field plate conductor defined drain regions
08/07/1990US4947221 Memory cell for a dense EPROM
08/07/1990US4947220 Field Effect Transistor device
08/07/1990US4947219 Particulate semiconductor devices and methods
08/07/1990US4947218 Heat, radiation resistance
08/07/1990US4946803 Method for manufacturing a Schottky-type rectifier having controllable barrier height
08/07/1990US4946800 Doping with oxygen, nitrogen
08/07/1990US4946799 Process for making high performance silicon-on-insulator transistor with body node to source node connection
08/02/1990WO1990009033A1 P-n-p diamond transistor
08/02/1990DE4002673A1 Semiconductor device in insulated wells - has reduced series resistance out to use of highly doped polycrystalline layer as dopant source
08/02/1990DE4001368A1 Conductivity-type modulation MOSFET structure - has buffer layer with second more heavily doped, thinner buffer on it
08/02/1990DE3942640A1 Matrix-form MOS device structure - has ring channel layers in each cell and fourth zone symmetric to four cells
08/02/1990CA2002885A1 Method of fabricating a submicron silicon gate mosfet which has a self-aligned threshold implant
08/01/1990EP0380340A2 Silicon carbide Schottky diode and method of making same
08/01/1990EP0380249A2 Insulated gate bipolar transistor
08/01/1990EP0380168A1 Integrated semiconductor device comprising a field-effect transistor with an isolated gate biased at a high level
08/01/1990EP0380166A1 Integrated semiconductor device comprising a field-effect transistor with an isolated gate biased at a high level in order to produce a zone of negative differential conductance at the drain electrode
08/01/1990EP0380077A2 Transistor provided with strained germanium layer
08/01/1990EP0379964A1 Ink jet printer recording sheet
08/01/1990EP0379878A1 Substrate power supply contact for power integrated circuits
08/01/1990EP0379693A2 A non-volatile semiconductor memory device having a circuit for applying a program voltage
08/01/1990CN1044364A Protection of power integrated circuits against load voltage surges
07/1990
07/31/1990US4945396 Semiconductor device having Darlington transistors
07/31/1990US4945394 Bipolar junction transistor on silicon carbide
07/31/1990US4945393 Floating gate memory circuit and apparatus
07/31/1990US4945392 Static induction transistor and manufacturing method of the same
07/31/1990US4945266 Composite semiconductor device
07/31/1990US4945068 Manufacturing method of semiconductor nonvolatile memory device
07/31/1990US4945067 Intra-gate offset high voltage thin film transistor with misalignment immunity and method of its fabrication
07/31/1990US4944811 Optical fibers
07/30/1990CA2008406A1 Non-volatile memory
07/26/1990WO1990008402A1 Fet transistor and liquid crystal display device obtained by using the same
07/26/1990DE4001886A1 Shielding cap for glove box opening - having cylindrical main section, hermetically sealed opening and cover plate having radial cuts and glove clamping devices
07/25/1990EP0379450A1 Process for manufacturing integrated circuits using EPROM memory transistors and logic transistors
07/25/1990EP0379449A1 Process for manufacturing integrated circuits
07/25/1990EP0379366A1 A display electrode substrate
07/25/1990EP0379359A2 A composite material
07/25/1990EP0379208A2 A method for producing a device having an insulator sandwiched between two semiconductor layers
07/25/1990EP0379024A2 Semiconductor device manufacturing method
07/25/1990EP0378894A2 Fabrication of GaAs integrated circuits
07/25/1990EP0378794A1 Vertical bipolar transistor structure and method of manufacturing
07/25/1990EP0378750A1 Crosshandled guard baton (A)
07/25/1990EP0227692B1 Thin layer consisting essentially of ruthenium salt
07/25/1990CA2008176A1 Silicon carbide schottky diode and method of making same
07/24/1990US4943943 Read-out circuit for semiconductor nonvolatile memory
07/24/1990US4943840 Reverse-conducting thyristor
07/24/1990US4943838 Thin film transistor and method of making the same
07/24/1990US4943837 Thin film semiconductor device and method of fabricating the same
07/24/1990US4943836 Ultraviolet erasable nonvolatile semiconductor device
07/24/1990US4943835 Semiconductor device including protecting MOS transistor
07/24/1990US4943742 Schottky barrier diode clamp transistor
07/24/1990US4943537 CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
07/24/1990US4943471 Patterned thin film and process for preparing the same
07/24/1990US4943258 Outlet device for coin payout hoppers
07/24/1990US4943143 Display panel
07/24/1990CA1271930A1 Sealed cavity semiconductor pressure transducers and method of producing the same
07/18/1990EP0378306A2 Secure integrated circuit chip with conductive field
07/18/1990EP0378227A1 Eeprom having erasing gate electrode patterns formed to intersect source region patterns and method for manufacturing the same
07/18/1990EP0378164A2 Bipolar transistor and method of manufacturing the same
07/18/1990EP0377959A2 A method of driving a charge detection circuit
07/18/1990EP0377908A2 Neural network having an associative memory that learns by example
07/18/1990EP0377871A2 Self-aligned window at recessed intersection of insulating regions
07/18/1990EP0377841A2 Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise
07/18/1990EP0377790A2 Microelectronic device based on mesoscopic phenomena
07/18/1990CN1044014A Semiconductor device and method of manufacturing semiconductor device
07/17/1990US4942554 Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same
07/17/1990US4942450 Semiconductor memory device having non-volatile memory transistors
07/17/1990US4942449 Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips
07/17/1990US4942448 Structure for isolating semiconductor components on an integrated circuit and a method of manufacturing therefor
07/17/1990US4942446 Semiconductor device for switching, and the manufacturing method therefor
07/17/1990US4942445 Lateral depletion mode tyristor