Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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08/14/1990 | US4949139 Transistor construction for low noise output driver |
08/14/1990 | US4949137 Semiconductor device |
08/14/1990 | US4949136 Submicron lightly doped field effect transistors |
08/14/1990 | US4948756 Forming two openings by etching polysilicon layer and dielectric |
08/14/1990 | US4948752 Gallium-arsenic intermetallic |
08/14/1990 | US4948746 Isolated gate MESFET and method of making and trimming |
08/14/1990 | US4948744 Process of fabricating a MISFET |
08/14/1990 | US4948231 Liquid crystal display device and method of manufacturing the same |
08/14/1990 | CA1272811A1 Semiconductor device of overvoltage self-protection type |
08/09/1990 | DE4002435A1 Cellular power semiconductor device - has draught-board type array of N and P=type cells connected resp. to two areas by pair of conductive sheets |
08/08/1990 | EP0381591A2 Quantum interference semiconductor device |
08/08/1990 | EP0381404A2 Non-volatile memory |
08/08/1990 | EP0381396A1 Compound semiconductor devices |
08/08/1990 | EP0381280A1 Method of manufacturing an integrated circuit with a protection element |
08/08/1990 | EP0381268A1 A field effect semiconductor device |
08/08/1990 | EP0381139A2 Semiconductor integrated circuit and method of manufacture thereof |
08/08/1990 | EP0381110A1 Protection layer for electroactive passivation layers |
08/08/1990 | EP0381071A2 An improved method for forming emitters in a bicmos process |
08/08/1990 | EP0380964A2 Method of making a semiconductor device having a contact member |
08/08/1990 | EP0380885A1 Capacitive sensor with minimized dielectric drift |
08/08/1990 | EP0380881A2 Protection circuit for a power mosfet driving an inductive load |
08/08/1990 | EP0380799A1 Pressure contact semiconductor component |
08/08/1990 | EP0197116B1 Low-leakage jfet |
08/07/1990 | US4947234 Semiconductor component with power MOSFET and control circuit |
08/07/1990 | US4947232 High voltage MOS transistor |
08/07/1990 | US4947231 Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it |
08/07/1990 | US4947230 Base-coupled transistor logic |
08/07/1990 | US4947226 Bilateral switching device |
08/07/1990 | US4947225 Sub-micron devices with method for forming sub-micron contacts |
08/07/1990 | US4947222 Electrically programmable and erasable memory cells with field plate conductor defined drain regions |
08/07/1990 | US4947221 Memory cell for a dense EPROM |
08/07/1990 | US4947220 Field Effect Transistor device |
08/07/1990 | US4947219 Particulate semiconductor devices and methods |
08/07/1990 | US4947218 Heat, radiation resistance |
08/07/1990 | US4946803 Method for manufacturing a Schottky-type rectifier having controllable barrier height |
08/07/1990 | US4946800 Doping with oxygen, nitrogen |
08/07/1990 | US4946799 Process for making high performance silicon-on-insulator transistor with body node to source node connection |
08/02/1990 | WO1990009033A1 P-n-p diamond transistor |
08/02/1990 | DE4002673A1 Semiconductor device in insulated wells - has reduced series resistance out to use of highly doped polycrystalline layer as dopant source |
08/02/1990 | DE4001368A1 Conductivity-type modulation MOSFET structure - has buffer layer with second more heavily doped, thinner buffer on it |
08/02/1990 | DE3942640A1 Matrix-form MOS device structure - has ring channel layers in each cell and fourth zone symmetric to four cells |
08/02/1990 | CA2002885A1 Method of fabricating a submicron silicon gate mosfet which has a self-aligned threshold implant |
08/01/1990 | EP0380340A2 Silicon carbide Schottky diode and method of making same |
08/01/1990 | EP0380249A2 Insulated gate bipolar transistor |
08/01/1990 | EP0380168A1 Integrated semiconductor device comprising a field-effect transistor with an isolated gate biased at a high level |
08/01/1990 | EP0380166A1 Integrated semiconductor device comprising a field-effect transistor with an isolated gate biased at a high level in order to produce a zone of negative differential conductance at the drain electrode |
08/01/1990 | EP0380077A2 Transistor provided with strained germanium layer |
08/01/1990 | EP0379964A1 Ink jet printer recording sheet |
08/01/1990 | EP0379878A1 Substrate power supply contact for power integrated circuits |
08/01/1990 | EP0379693A2 A non-volatile semiconductor memory device having a circuit for applying a program voltage |
08/01/1990 | CN1044364A Protection of power integrated circuits against load voltage surges |
07/31/1990 | US4945396 Semiconductor device having Darlington transistors |
07/31/1990 | US4945394 Bipolar junction transistor on silicon carbide |
07/31/1990 | US4945393 Floating gate memory circuit and apparatus |
07/31/1990 | US4945392 Static induction transistor and manufacturing method of the same |
07/31/1990 | US4945266 Composite semiconductor device |
07/31/1990 | US4945068 Manufacturing method of semiconductor nonvolatile memory device |
07/31/1990 | US4945067 Intra-gate offset high voltage thin film transistor with misalignment immunity and method of its fabrication |
07/31/1990 | US4944811 Optical fibers |
07/30/1990 | CA2008406A1 Non-volatile memory |
07/26/1990 | WO1990008402A1 Fet transistor and liquid crystal display device obtained by using the same |
07/26/1990 | DE4001886A1 Shielding cap for glove box opening - having cylindrical main section, hermetically sealed opening and cover plate having radial cuts and glove clamping devices |
07/25/1990 | EP0379450A1 Process for manufacturing integrated circuits using EPROM memory transistors and logic transistors |
07/25/1990 | EP0379449A1 Process for manufacturing integrated circuits |
07/25/1990 | EP0379366A1 A display electrode substrate |
07/25/1990 | EP0379359A2 A composite material |
07/25/1990 | EP0379208A2 A method for producing a device having an insulator sandwiched between two semiconductor layers |
07/25/1990 | EP0379024A2 Semiconductor device manufacturing method |
07/25/1990 | EP0378894A2 Fabrication of GaAs integrated circuits |
07/25/1990 | EP0378794A1 Vertical bipolar transistor structure and method of manufacturing |
07/25/1990 | EP0378750A1 Crosshandled guard baton (A) |
07/25/1990 | EP0227692B1 Thin layer consisting essentially of ruthenium salt |
07/25/1990 | CA2008176A1 Silicon carbide schottky diode and method of making same |
07/24/1990 | US4943943 Read-out circuit for semiconductor nonvolatile memory |
07/24/1990 | US4943840 Reverse-conducting thyristor |
07/24/1990 | US4943838 Thin film transistor and method of making the same |
07/24/1990 | US4943837 Thin film semiconductor device and method of fabricating the same |
07/24/1990 | US4943836 Ultraviolet erasable nonvolatile semiconductor device |
07/24/1990 | US4943835 Semiconductor device including protecting MOS transistor |
07/24/1990 | US4943742 Schottky barrier diode clamp transistor |
07/24/1990 | US4943537 CMOS integrated circuit with reduced susceptibility to PMOS punchthrough |
07/24/1990 | US4943471 Patterned thin film and process for preparing the same |
07/24/1990 | US4943258 Outlet device for coin payout hoppers |
07/24/1990 | US4943143 Display panel |
07/24/1990 | CA1271930A1 Sealed cavity semiconductor pressure transducers and method of producing the same |
07/18/1990 | EP0378306A2 Secure integrated circuit chip with conductive field |
07/18/1990 | EP0378227A1 Eeprom having erasing gate electrode patterns formed to intersect source region patterns and method for manufacturing the same |
07/18/1990 | EP0378164A2 Bipolar transistor and method of manufacturing the same |
07/18/1990 | EP0377959A2 A method of driving a charge detection circuit |
07/18/1990 | EP0377908A2 Neural network having an associative memory that learns by example |
07/18/1990 | EP0377871A2 Self-aligned window at recessed intersection of insulating regions |
07/18/1990 | EP0377841A2 Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise |
07/18/1990 | EP0377790A2 Microelectronic device based on mesoscopic phenomena |
07/18/1990 | CN1044014A Semiconductor device and method of manufacturing semiconductor device |
07/17/1990 | US4942554 Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same |
07/17/1990 | US4942450 Semiconductor memory device having non-volatile memory transistors |
07/17/1990 | US4942449 Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips |
07/17/1990 | US4942448 Structure for isolating semiconductor components on an integrated circuit and a method of manufacturing therefor |
07/17/1990 | US4942446 Semiconductor device for switching, and the manufacturing method therefor |
07/17/1990 | US4942445 Lateral depletion mode tyristor |