Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1990
09/05/1990EP0385533A2 A method of manufacturing a semiconductor device having a mesa structure
09/05/1990EP0385516A2 Memory
09/05/1990EP0385450A2 Semiconductor device with MIS capacitor
09/05/1990EP0385031A1 Semiconductor device with a recessed gate, and a production method thereof
09/05/1990CN1009516B Complementary sillicon-on-insulator lateral insulated gate rectifiers
09/04/1990US4954925 Capacitive sensor with minimized dielectric drift
09/04/1990US4954871 Semiconductor device with composite electrode
09/04/1990US4954869 MOS-controlled thyristor (MCT)
09/04/1990US4954868 MOS semiconductor device which has high blocking voltage
09/04/1990US4954867 Protective coatings
09/04/1990US4954855 Thin film transistor formed on insulating substrate
09/04/1990US4954854 Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
09/04/1990US4954852 Sputtered metallic silicide gate for GaAs integrated circuits
09/04/1990US4954851 Schottky barrier on indium gallium arsenide
09/04/1990US4954850 Variable-capacitance diode device
09/04/1990US4954757 Linear deflection amplifier with energy recovery
09/04/1990US4954458 Method of forming a three dimensional integrated circuit structure
09/04/1990US4954457 Method of making heterojunction bipolar transistors
09/04/1990US4954456 Fabrication method for high speed and high packing density semiconductor device (BiCMOS)
09/04/1990US4954182 Solar cells
09/04/1990US4953928 MOS device for long-term learning
09/03/1990WO1990010309A2 Fermi threshold field effect transistor
08/1990
08/31/1990CA2008788A1 Mesa fabrication in semiconductor structures
08/29/1990EP0384692A2 Charge-coupled device and process of fabrication thereof
08/29/1990EP0384396A2 Bi-CMOS semiconductor device having memory cells formed in isolated wells
08/29/1990EP0384275A2 MOS memory cell with exponentially-profiled doping and offset floating gate tunnel oxidation
08/29/1990EP0384113A2 Multilayer base heterojunction biopolar transistor
08/29/1990EP0384031A1 Semiconductor device and method for the production of an insulated film used in this device
08/29/1990EP0383821A1 Epitaxial intermetallic contact for compound semiconductors
08/29/1990EP0225920B1 Process for forming contacts and interconnects for integrated circuits
08/29/1990EP0203960B1 High-performance trench capacitors for dram cells
08/29/1990EP0172888B1 Versatile generic chip substrate
08/28/1990US4953125 Semiconductor memory device having improved connecting structure of bit line and memory cell
08/28/1990US4953005 Packaging system for stacking integrated circuits
08/28/1990US4953004 Housing for a gate turn-off power thyristor (GTO)
08/28/1990US4953003 Oxidation resistance; titanium, copper and metal multilayers
08/28/1990US4952998 Integrated circuit with complementary MOS transistors
08/28/1990US4952993 Semiconductor device and manufacturing method thereof
08/28/1990US4952992 Method and apparatus for improving the on-voltage characteristics of a semiconductor device
08/28/1990US4952991 Vertical field-effect transistor having a high breakdown voltage and a small on-resistance
08/28/1990US4952990 Gate turn-off power semiconductor component
08/28/1990US4952984 Display device including lateral schottky diodes
08/28/1990US4952527 Method of making buffer layers for III-V devices using solid phase epitaxy
08/28/1990US4952523 Reduced dark current
08/28/1990US4952028 Method for driving an optoelectronic switching device
08/28/1990CA1273439A1 Stacked metal silicide gate structure with barrier
08/23/1990WO1990009680A1 Interline transfer ccd image sensing device with electrode structure for each pixel
08/23/1990WO1990009678A1 Bipolar transistor and method for the manufacture thereof
08/23/1990WO1990009677A1 Formation of microstructures with removal of liquid by freezing and sublimation
08/23/1990DE3940388A1 DMOS field effect transistor
08/23/1990DE3905418A1 Semiconductor structure with electrode ion migration - has auxiliary ion collector on face with main electrode with other main contact on opposite face
08/22/1990EP0383743A2 Thin film transistor
08/22/1990EP0383519A2 Charge coupled device imager having multichannel read-out structure
08/22/1990EP0383387A1 Integrated circuit
08/22/1990EP0383341A2 Mosfet input type bimos ic device
08/22/1990EP0383230A2 Manufacturing Method of a Semiconductor Device
08/22/1990EP0383210A1 Charge transfer device achieving a large charge transferring efficiency without sacrifice of dynamic range of output signal level
08/22/1990EP0383193A2 Microwave integrated circuit
08/22/1990EP0383034A1 Integrated circuit and method
08/22/1990EP0383011A2 Semiconductor non-volatile memory device
08/22/1990EP0382947A1 Bipolar transistor and method of fabricating same
08/22/1990EP0382927A1 ECL EPROM with CMOS programming
08/22/1990EP0382775A1 Transistor
08/21/1990US4951302 Charge-coupled device shift register
08/21/1990US4951123 Integrated circuit chip assembly utilizing selective backside deposition
08/21/1990US4951121 Semiconductor device with a 3-ply gate electrode
08/21/1990US4951117 Isolation of insulated-gate field-effect transistors
08/21/1990US4951115 Complementary transistor structure and method for manufacture
08/21/1990US4951113 Simultaneously deposited thin film CMOS TFTs and their method of fabrication
08/21/1990US4951111 Integrated circuit device
08/21/1990US4951110 Power semiconductor structural element with four layers
08/21/1990US4951109 Turn-off power semiconductor component
08/21/1990US4951108 Lateral transistor with elongated emitter
08/21/1990US4951107 Kinetic energy modulated hot electron transistor
08/21/1990US4951103 Fast, trench isolated, planar flash EEPROMS with silicided bitlines
08/21/1990US4951102 Integrated circuit
08/21/1990US4951101 Diamond shorting contact for semiconductors
08/21/1990US4951100 Hot electron collector for a LDD transistor
08/21/1990US4951099 Opposed gate-source transistor
08/21/1990US4950917 Semiconductor cell for neural network employing a four-quadrant multiplier
08/21/1990US4950617 Mos transistor by self-alignment
08/21/1990US4950616 Method for fabricating a BiCMOS device
08/16/1990EP0382504A2 Semiconductor integrated circuit having interconnection with improved design flexibility
08/16/1990EP0382165A2 High-voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance
08/16/1990EP0381901A2 Method of fabricating a bipolar transistor structure comprising a self-aligned trench-isolated emitter
08/16/1990EP0210173B1 Semiconductor device and arrangement
08/16/1990DE4003389A1 Horizontal conductivity changing MOSFET - has substrate with low impurity concn. and two electrodes, with second one contacted by second zone
08/16/1990DE3937502A1 Insulating or field-screening structure - for IC semiconductor devices
08/15/1990CN1044737A Ultra-fast high temperature rectifying diode formed in silicon carbide
08/15/1990CN1009232B Double injection field effect transistors
08/14/1990US4949305 Erasable read-only semiconductor memory device
08/14/1990US4949182 CCD sensor
08/14/1990US4949152 Semiconductor integrated circuit
08/14/1990US4949151 Bipolar transistor having side wall base and collector contacts
08/14/1990US4949148 Self-aligning integrated circuit assembly
08/14/1990US4949147 Sensitive thyristor with integrated gate-cathode decoupling
08/14/1990US4949145 Homo-junction bipolar transistor having high base concentration and suitable for low temperature operation
08/14/1990US4949142 Integrated N-channel power MOS bridge circuit
08/14/1990US4949141 Vertical gate thin film transistors in liquid crystal array
08/14/1990US4949140 EEPROM cell with integral select transistor
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