| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/27/1990 | DE4008780A1 Homo-junction bipolar transistor - suitable for low temp. high speed operation |
| 09/27/1990 | DE4007895A1 Verfahren zum reduzieren der hot-electron-degradation in halbleiterbauelementen A method for reducing the hot-electron-degradation in semiconductor devices |
| 09/26/1990 | EP0389171A2 Mobile ion getterer for metal conductors |
| 09/26/1990 | EP0389071A2 Method for fabricating semiconductor diaphragms |
| 09/26/1990 | EP0389028A2 Planarization process for EPROM memory cell matrices with a table cloth and a half table cloth structure |
| 09/26/1990 | EP0388957A2 Process for depositing tantalum oxide film and chemical vapor deposition system used therefore |
| 09/26/1990 | EP0388752A2 Reference cell for reading eeprom memory devices |
| 09/26/1990 | EP0388612A2 Semiconductor device with self-aligned contact to buried subcollector |
| 09/26/1990 | EP0388529A2 Logic circuits using a status holding circuit |
| 09/25/1990 | US4959839 Rib waveguide type semiconductor laser |
| 09/25/1990 | US4959812 Electrically erasable programmable read-only memory with NAND cell structure |
| 09/25/1990 | US4959703 Turn-on/off driving technique for insulated gate thyristor |
| 09/25/1990 | US4959702 Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrate |
| 09/25/1990 | US4959700 Insulated gate field effect transistor and its manufacturing method |
| 09/25/1990 | US4959699 High power MOSFET with low on-resistance and high breakdown voltage |
| 09/25/1990 | US4959697 Short channel junction field effect transistor |
| 09/25/1990 | US4959696 Three terminal tunneling device and method |
| 09/25/1990 | US4959694 Semiconductor heterostructures with SiGe material |
| 09/25/1990 | US4959328 Method for manufacturing a semiconductor component contactable on both sides |
| 09/23/1990 | CA2007909A1 Single trench mosfet-capacitor cell for analog signal processing |
| 09/21/1990 | CA2007908A1 Trench gate metal oxide semiconductor transistor |
| 09/20/1990 | DE3908083A1 Silicon semiconductor component |
| 09/20/1990 | DE3908081A1 Misfet |
| 09/19/1990 | EP0388179A2 Semiconductor device having multilayer wiring and the method of making it |
| 09/19/1990 | EP0388075A2 Contacts for semiconductor devices |
| 09/19/1990 | EP0388060A2 Dense flash eeprom semiconductor memory structure and manufacturing process |
| 09/19/1990 | EP0388022A2 Solid state overcurrent protection device |
| 09/19/1990 | EP0388000A2 Process for forming vertical bipolar transistors and high-voltage CMOS in a single integrated circuit chip |
| 09/19/1990 | EP0387944A1 Semiconductor device provided with a protection circuit |
| 09/19/1990 | EP0387936A1 Table cloth matrix of EPROM memory cells with buried junctions, individually accessible by a traditional decoder |
| 09/19/1990 | EP0387935A1 Table cloth matrix of EPROM memory cells with an asymmetrical fin |
| 09/19/1990 | EP0387917A2 Power MOSFET having a high breakdown voltage |
| 09/19/1990 | EP0387892A2 Forming an insulation layer, for example in an active matrix device |
| 09/19/1990 | EP0387890A1 Method of transmitting pulse signal and apparatus therefor |
| 09/19/1990 | EP0387889A2 Nonvolatile semiconductor memory |
| 09/19/1990 | EP0387836A2 Semiconductor device for use in a hybrid LSI circuit |
| 09/19/1990 | EP0387835A2 Semiconductor device and method of manufacturing the same |
| 09/19/1990 | EP0387833A1 Semiconductor device having charge transfer device and its peripheral circuit formed on semiconductor substrate |
| 09/19/1990 | EP0387722A1 MOSFET transistor with a non uniform threshold voltage in the channel region |
| 09/19/1990 | EP0387721A2 Thyristor having a particular switching behaviour |
| 09/19/1990 | CN1009688B Semiconductor device having semiconductor region in which band gap being continuously graded |
| 09/18/1990 | US4958321 Electrically programmable/erasable semiconductor |
| 09/18/1990 | US4958222 Semiconductor integrated circuit device |
| 09/18/1990 | US4958215 Press-contact flat type semiconductor device |
| 09/18/1990 | US4958211 MCT providing turn-off control of arbitrarily large currents |
| 09/18/1990 | US4958210 High voltage integrated circuits |
| 09/18/1990 | US4958209 Varicap diode structure |
| 09/18/1990 | US4958208 Bipolar transistor with abrupt potential discontinuity in collector region |
| 09/18/1990 | US4958207 Floating diode gain compression |
| 09/18/1990 | US4958205 Thin film transistor array and method of manufacturing the same |
| 09/18/1990 | US4958204 Junction field-effect transistor with a novel gate |
| 09/18/1990 | US4958203 Undoped channel in dielectric substrate; doped carrier |
| 09/18/1990 | US4958201 Resonant tunneling minority carrier transistor |
| 09/18/1990 | US4957881 Formation of self-aligned contacts |
| 09/18/1990 | US4957877 Doping, then diffusion of dopant |
| 09/18/1990 | US4957875 Vertical bipolar transistor |
| 09/18/1990 | US4957874 Multilayer; polycrystalline semiconductor, dielectric, and second semiconductor |
| 09/18/1990 | US4957337 Optical quantum interference device and method of modulating light using same |
| 09/18/1990 | CA1274154A1 Gaseous etching process |
| 09/13/1990 | DE4006886A1 Semiconductor IC - uses MIS-field effect transistor configuration arranged to prevent current capacity sacrifice |
| 09/13/1990 | DE4006432A1 Non-volatile memory - has sleep mode at lower voltage and novel storage cell |
| 09/12/1990 | EP0387163A1 EPROM memory laid out in a grid having a high coupling factor, and method of fabrication |
| 09/12/1990 | EP0387102A2 Semi-conductor non-volatile memory and method of writing the same |
| 09/12/1990 | EP0387101A2 Semi-conductor non-volatile memory and method of writing the same |
| 09/12/1990 | EP0387010A2 Hetero-junction bipolar transistor |
| 09/12/1990 | EP0386798A2 A method for forming a channel stopper in a semiconductor structure |
| 09/12/1990 | EP0386779A2 MOS field-effect transistor having a high breakdown voltage |
| 09/12/1990 | EP0386775A1 Electrode structure for III-V compound semiconductor element and method of manufacturing the same |
| 09/12/1990 | EP0386676A2 Semiconductor growth process and apparatus therefore |
| 09/12/1990 | EP0386631A2 Eprom memory with crosspoint configuration and method for its manufacture |
| 09/12/1990 | EP0386574A1 CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron |
| 09/12/1990 | EP0386413A2 Complementary transistor structure and method for manufacture |
| 09/12/1990 | EP0386388A1 Method for the epitaxial growth of a semiconductor structure |
| 09/12/1990 | EP0386152A1 Millimeter wave imaging device. |
| 09/12/1990 | EP0386119A1 Microelectrochemical devices and method of detecting |
| 09/12/1990 | EP0386085A1 Mosfet in silicon carbide |
| 09/12/1990 | CN1009601B Epitaxial material of gallium phosphide with high luminescence efficiency |
| 09/12/1990 | CN1009600B Method for producing metal oxide semi-conductor field effect integrated circuit with slowly changing source leakage zone |
| 09/11/1990 | US4956700 Integrated circuit with high power, vertical output transistor capability |
| 09/11/1990 | US4956693 Doped layer suppresses swelling of support under layer |
| 09/11/1990 | US4956690 Zero crossing type thyristor |
| 09/11/1990 | US4956689 High speed gallium arsenide transistor and method |
| 09/11/1990 | US4956688 Radiation resistant bipolar memory |
| 09/11/1990 | US4956681 Ternary logic circuit using resonant-tunneling transistors |
| 09/11/1990 | US4956680 Thin film transistor |
| 09/11/1990 | US4956311 Double-diffused drain CMOS process using a counterdoping technique |
| 09/11/1990 | US4956310 Semiconductor memory device and fabricating method thereof |
| 09/11/1990 | US4956308 Assymetrical doped zone; reduced electrical resistance |
| 09/11/1990 | US4956307 Thin oxide sidewall insulators for silicon-over-insulator transistors |
| 09/11/1990 | US4956305 Simultaneously forming the active base region of the transistor and setting the threshold voltage of the semiconductor by doping |
| 09/11/1990 | US4956204 Process of forming a film by low pressure chemical vapor deposition |
| 09/11/1990 | US4955692 Quasi-periodic layered structures |
| 09/11/1990 | US4955234 Measuring acceleration of a vehicle |
| 09/07/1990 | WO1990010311A1 Mos field effect transistor controlled thyristor |
| 09/07/1990 | WO1990010310A1 Thyristor |
| 09/07/1990 | WO1990010248A1 Thin-film transistor |
| 09/05/1990 | EP0385906A2 Method of forming a lateral PNP transistor |
| 09/05/1990 | EP0385581A1 Voltage protection system |
| 09/05/1990 | EP0385574A1 Capacitive semiconductor sensor with hinged diaphragm for planar movement |
| 09/05/1990 | EP0385573A2 Mesa fabrication in semiconductor structures |