Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1990
10/18/1990WO1990012296A1 Semiconductor transducer or actuator utilizing corrugated supports
10/18/1990DE3912056A1 Carrier lifetime axial adjustment in semiconductor - by impurity diffusion, irradiation and thermal de-activation
10/17/1990EP0392954A2 A Lateral transistor and method of making same
10/17/1990EP0392944A1 High voltage spiral resistor
10/17/1990EP0392925A1 Composite material containing III-V compound layer and a layer of rare earth pnictide, method for its production and application thereof
10/17/1990EP0392895A2 Flash EEprom system
10/17/1990EP0392751A2 High-voltage semiconductor device
10/17/1990EP0392725A2 Method for fabricating integrated circuits with silicide
10/17/1990EP0392695A1 Semiconductor device with interfacial electrode layer
10/17/1990EP0392642A1 Method of filling with a metal layer a recess formed in an integrated circuit chip
10/17/1990EP0392587A2 UPROM memory cell having a structure compatible with the manufacture of table cloth matrices of EPROM memory cells with self-aligned lines of source and drain, and process for its manufacture
10/17/1990EP0392536A2 Semiconductor device having CCD and its peripheral bipolar transistors and method of manufacturing the same
10/17/1990EP0392468A2 Composite type semiconductor device having electric isolation layer
10/17/1990EP0392373A2 Circuit device for potentialfree driving of a field effect transistor
10/17/1990EP0392364A2 Method of manufacturing a semiconductor device
10/17/1990EP0392120A1 Semiconductor device with a gate having asymmetric sidewalls, and a production method thereof
10/17/1990EP0391951A1 Quantum well field-controlled semiconductor triode
10/16/1990US4964143 EPROM element employing self-aligning process
10/16/1990US4964080 Three-dimensional memory cell with integral select transistor
10/16/1990US4963973 Semiconductor device
10/16/1990US4963972 Gate turn-off thyristor with switching control field effect transistor
10/16/1990US4963971 Symmetrical power semiconductor device and method of fabrication
10/16/1990US4963970 Vertical MOSFET device having protector
10/16/1990US4963957 Semiconductor device having bipolar transistor with trench
10/16/1990US4963953 Charge transfer device and method for producing such a device
10/16/1990US4963952 Multipinned phase charge-coupled device
10/16/1990US4963951 Lateral insulated gate bipolar transistors with improved latch-up immunity
10/16/1990US4963950 Metal oxide semiconductor gated turn-off thyristor having an interleaved structure
10/16/1990US4963949 Semiconductors
10/16/1990US4963948 Semiconductor device having level shift diode
10/16/1990US4963947 Semiconductor array
10/16/1990US4963825 Method of screening EPROM-related devices for endurance failure
10/16/1990US4963508 Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice
10/16/1990US4963504 Method for fabricating double implanted LDD transistor self-aligned with gate
10/16/1990US4963502 Method of making oxide-isolated source/drain transistor
10/16/1990US4963501 Method of fabricating semiconductor devices with sub-micron linewidths
10/13/1990CA2014430A1 Composite including a layer of a iii-v compound and a layer of rare earths, process for its production and its application
10/10/1990EP0391483A2 Bipolar transistor and method of manufacturing the same
10/10/1990EP0391480A2 Method of manufacturing a bipolar transistor
10/10/1990EP0391479A2 A method of manufacturing a bipolar transistor
10/10/1990EP0391420A2 Radiation resistant semiconductor structure
10/10/1990EP0391380A2 HEMT Structure
10/10/1990EP0391337A2 Gate turn-off thyristor
10/10/1990EP0391056A2 Dielectrically isolated semiconductor device and method
10/09/1990US4962481 EEPROM device with plurality of memory strings made of floating gate transistors connected in series
10/09/1990US4962413 Analog switch with minimized noise ascribable to gate capacitance
10/09/1990US4962411 Semiconductor device with current detecting function
10/09/1990US4962410 QUADFET-A novel field effect transistor
10/09/1990US4962409 Staggered bandgap gate field effect transistor
10/09/1990US4962320 Input protection circuit for MOS device
10/09/1990US4962065 Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
10/09/1990US4962054 Controlling spacings between drains and barrier electrodes
10/09/1990US4962053 Multilayer; semiconductor well, polycrystalline emitter, and dielectric
10/09/1990US4962052 Method for producing semiconductor integrated circuit device
10/09/1990US4962050 GaAs FET manufacturing process employing channel confining layers
10/09/1990US4961629 Liquid crystal display device
10/04/1990WO1990011621A1 Floating gate transistor and process for making it
10/04/1990WO1990011619A1 Single trench mosfet-capacitor cell for analog signal processing
10/04/1990WO1990011616A1 Trench gate complimentary metal oxide semiconductor transistor
10/04/1990WO1990011615A1 Trench gate metal oxide semiconductor transistor
10/04/1990DE4009675A1 Verfahren zur herstellung von influenz-halbleiterbauelementen und damit hergestelltes halbleiterbauelement Process for the preparation of influenz semiconductor devices and thus produced semiconductor component
10/04/1990DE3910609A1 Method for reducing the charge carrier lifetime
10/04/1990DE3910526A1 Monolithically integrated transistor arrangement for clamping voltages subject to voltage interference
10/03/1990EP0390703A2 Lateral type semiconductor device having a structure for eliminating turning-on of parasitic mos transistors formed therein
10/03/1990EP0390661A1 Process for the directed modulation of the composition or doping of semiconductors, notably for the manufacture of planar monolithic electronic components, use and corresponding products
10/03/1990EP0390606A2 Semiconductor device having transistor improved in emitter region and/or base electrode
10/03/1990EP0390522A2 Bipolar transistor and photoelectric conversion apparatus using the same
10/03/1990EP0390521A2 Bipolar transistor and photoelectric converting apparatus using the bipolar transistor
10/03/1990EP0390509A2 Semi-conductor device and method of manufacturing the same
10/03/1990EP0390505A2 Matrix display apparatus
10/03/1990EP0390485A2 MOS-pilot structure for an insulated gate transistor and method of providing a pilot current in such a transistor
10/03/1990EP0390312A2 A method of fabricating a field-effect transistor
10/03/1990EP0390274A1 Semiconductor device comprising unidimensional doping conductors and method of manufacturing such a semiconductor device
10/03/1990EP0390225A1 Liquid-crystal display device
10/03/1990EP0390219A2 Semiconductor device and method of manufacturing the same
10/03/1990EP0390205A2 Output circuit having high charge to voltage conversion gain
10/03/1990EP0389964A2 Manufacturing process for a bridged-emitter doped-silicide transistor
10/03/1990EP0389942A1 High blocking voltage semiconductor device
10/03/1990EP0389863A1 Process for manufacturing a high-voltage withstanding planar p-n junction
10/03/1990EP0389862A2 Turn-off thyristor
10/03/1990EP0389761A1 Microstructures which provide superlattice effects and one-dimensional carrier gas channels
10/03/1990EP0389721A2 Flash EPROM cell and method of making such cell
10/03/1990EP0389693A1 EPROM enabling multiple use of bit line contacts
10/03/1990EP0191037B1 Semiconductor-on-insulator (soi) devices and soi ic fabrication method
10/03/1990CN1009887B Semiconductor devices
10/02/1990US4961194 Compound semiconductor device having nonalloyed ohmic contacts
10/02/1990US4961165 Semiconductor memory device having a charge barrier layer for preventing soft error
10/02/1990US4961102 Junction programmable vertical transistor with high performance transistor
10/02/1990US4961101 Semiconductor MOSFET device with offset regions
10/02/1990US4961100 Bidirectional field effect semiconductor device and circuit
10/02/1990US4961099 High-power GTO thyristor and also a method for its manufacture
10/02/1990US4961010 Output buffer for reducing switching induced noise
10/02/1990US4960751 Heat, oxidation resistance film with maximum performance
10/02/1990US4960731 Doping with boron or phosphorus; gettering substance to increase lifetime, iminmize forward voltage drop; corrosion resistance
10/02/1990US4960726 BiCMOS process
10/02/1990US4960725 Semiconductor device and manufacturing process for providing device regions on the semiconductor device and isolation regions to isolate the device regions from each other.
10/02/1990US4960723 Process for making a self aligned vertical field effect transistor having an improved source contact
10/02/1990US4960718 Implanting gallium or aluminum on indium phosphide substrate, annealing; implanting iron or oxygen, etching
10/02/1990US4960717 Doping, oxidizing, etching silicon; forming transistors
10/02/1990CA1274900A1 Field-effect transistor and the same associated with an optical semiconductor device
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