Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1990
11/13/1990CA1276275C Resonant tunneling transistor
11/12/1990WO1990013921A1 Semiconductor device
11/07/1990EP0396508A2 Process for fabricating an EPROM cell array
11/07/1990EP0396357A1 Process for forming CMOS field effect transistors
11/07/1990EP0396326A1 Method of processing substrate for semiconductor device
11/07/1990EP0396263A2 EEPROM device
11/07/1990EP0396221A2 Integrated ferroelectric capacitor
11/07/1990EP0396167A1 Protection device against the breakdown of bipolar transistors in an integrated driving circuit for power device with resonant load on the collector
11/07/1990EP0396104A2 Bidirectional control rectifying semiconductor apparatus
11/07/1990EP0395894A2 Electronic circuit for analog multiplication, differential amplification or charge accumulation
11/07/1990EP0395862A2 Semiconductor device comprising a lead member
11/07/1990EP0190162B1 Controlled turn-on thyristor
11/06/1990US4969032 Monolithic microwave integrated circuit having vertically stacked components
11/06/1990US4969031 Semiconductor devices and method for making the same
11/06/1990US4969030 Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors
11/06/1990US4969028 Gate enhanced rectifier
11/06/1990US4969027 Power bipolar transistor device with integral antisaturation diode
11/06/1990US4969026 Mesa bipolar transistor with edge contacts
11/06/1990US4969024 Metal-oxide-semiconductor device
11/06/1990US4969023 SOS transistor structure
11/06/1990US4969022 Dynamic random access memory device having a plurality of improved one-transistor type memory cells
11/06/1990US4969021 Porous floating gate vertical mosfet device with programmable analog memory
11/06/1990US4969020 Semiconductor device
11/06/1990US4969019 Semiconductor device
11/06/1990US4969018 Quantum-well logic using self-generated potentials
11/06/1990US4968646 Process for fabricating small size electrodes in an integrated circuit
11/06/1990US4968645 Method for manufacturing MOS/CMOS monolithic integrated circuits including silicide and polysilicon patterning
11/06/1990US4968639 Semiconductors
11/06/1990US4968638 Semiconductor devices
11/06/1990US4968637 Titanium-tungsten, semiconductors
11/06/1990US4968635 Crystal structure, semiconductors
11/01/1990WO1990013145A1 Semiconductor device and method of producing the same
11/01/1990WO1990013141A1 Edge doping processes for mesa structures in sos and soi devices
10/1990
10/31/1990EP0395358A2 Bipolar transistor and manufacturing method thereof
10/31/1990EP0395161A2 Mim devices, their method of fabrication and display devices incorporating such devices
10/31/1990EP0395084A2 Method of manufacturing a logic semiconductor device having non-volatile memory
10/31/1990EP0395073A2 Light-triggered switching circuit
10/31/1990EP0394859A1 Bidirectional turn-off semiconductor device
10/31/1990EP0394757A2 Method for fabrication of active semiconductor structures using basic structures with surface-parallel 2D-charge carrier layer
10/31/1990EP0394742A2 Superconducting three terminal device and process of fabrication thereof
10/31/1990EP0394664A2 Improved semiconductor pressure sensor means and method
10/31/1990EP0394597A1 Follow-up System for Monitoring the Etching Process in an RIE Equipment and its Application to Producing High-resolution and Reproducible Patterns
10/31/1990EP0394590A2 Field effect transistors and method of making a field effect transistor
10/30/1990US4967259 Wafer having a dicing area having a step region covered with a conductive layer and method of manufacturing the same
10/30/1990US4967257 Semiconductor device having field effect transistors
10/30/1990US4967256 Overvoltage protector
10/30/1990US4967255 Controllable power semiconductor component
10/30/1990US4967254 Semiconductor device
10/30/1990US4967253 Bipolar transistor integrated circuit technology
10/30/1990US4967252 Compound semiconductor bipolar device with side wall contact
10/30/1990US4967250 Charge-coupled device with focused ion beam fabrication
10/30/1990US4967249 Gain compression photodetector array
10/30/1990US4967247 Vertical dynamic random access memory
10/30/1990US4967246 Structure of insulated gate bipolar transistors
10/30/1990US4967245 Trench power MOSFET device
10/30/1990US4967244 Power semiconductor component with switch-off facility
10/30/1990US4967243 Power transistor structure with high speed integral antiparallel Schottky diode
10/30/1990US4967242 Heterojunction field effect transistor
10/30/1990US4966867 Tapered spacers of dielectric material
10/30/1990US4966866 Diffusion dope of opersite conductivity, overcoating with dielectric
10/30/1990US4966860 Process for producing a SiC semiconductor device
10/30/1990US4966859 Voltage-stable sub-μm MOS transistor for VLSI circuits
10/30/1990US4966858 Method of fabricating a lateral semiconductor structure including field plates for self-alignment
10/30/1990US4966663 Method for forming a silicon membrane with controlled stress
10/30/1990US4966649 Hermetic sealing of recess gives self-oscillating hollow chamber; amplification
10/25/1990DE4012681A1 Integrierte schaltungsanordung Integrated circuit arrangement
10/25/1990DE4011509A1 Bidirectional, disconnectable semiconductor semiconductor component - has emitter regions of N plus doped N-type, and P-doped P-based layer
10/25/1990DE3912996A1 Region with low carrier lifetime in semiconductor devices - uses interstitial diffusion of foreign atoms then generation of vacancies into which atoms diffuse
10/24/1990EP0394092A1 process for making a self-aligned transistor
10/24/1990EP0393951A2 Semiconductor silicon wafer and manufacturing method thereof
10/24/1990EP0393949A1 Power field effect devices having small cell size and low contact resistance and method of fabrication
10/24/1990EP0393924A2 Devices having asymmetric delta-doping
10/24/1990EP0393737A2 Electrically-programmable semiconductor memories
10/24/1990EP0393317A2 Resonant tunneling semiconductor devices
10/24/1990EP0256085B1 Process for forming cmos structures
10/24/1990EP0230508B1 Structured semiconductor body
10/24/1990EP0182876B1 Tri-well cmos technology
10/23/1990US4965872 MOS-enhanced, self-aligned lateral bipolar transistor made of a semiconductor on an insulator
10/23/1990US4965697 Solid state pressure sensors
10/23/1990US4965656 Semiconductor device
10/23/1990US4965653 Semiconductor device and method of mounting the semiconductor device
10/23/1990US4965650 Bipolar transistor and method of producing the same
10/23/1990US4965648 Tilted channel, serial-parallel-serial, charge-coupled device
10/23/1990US4965647 Vertical MOS field effect transistor having a high withstand voltage and a high switching speed
10/23/1990US4965646 Thin film transistor and crossover structure for liquid crystal displays
10/23/1990US4965645 Saturable charge FET
10/23/1990US4965643 Schottky diode for integrated circuits
10/23/1990US4965565 Liquid crystal display panel having a thin-film transistor array for displaying a high quality picture
10/23/1990US4965510 Integrated semiconductor circuit
10/23/1990US4965466 Substrate injection clamp
10/23/1990US4965222 Method of manufacturing an epitaxial indium phosphide layer on a substrate surface
10/23/1990US4965220 Doping, oxidation, patterning
10/23/1990US4965219 Method for the manufacturing of insulated gate field effect transistors (IGFETS) having a high response speed in high density integrated circuits
10/23/1990US4965218 Self-aligned gate realignment employing planarizing overetch
10/23/1990US4965217 Doping, etching, oxidation, vapor deposition masking
10/23/1990US4965216 Method of fabricating a bi-CMOS device
10/23/1990US4965215 Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
10/23/1990US4965213 Doping, masking, siliciding, annealing
10/18/1990WO1990012421A1 Trench jfet integrated circuit elements
10/18/1990WO1990012402A1 Improved novram cell using two differential, decouplable nonvolatile memory elements
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