Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1990
12/04/1990US4975384 Semiconductor substrate, floating gate transistor
12/04/1990US4975383 Method for making an electrically erasable programmable read only memory cell having a three dimensional floating gate
12/04/1990US4975382 Method of making a self-aligned field-effect transistor by the use of a dummy-gate
12/04/1990US4975381 Patterned spacer film
12/04/1990CA1277444C Process for preparing a charge coupled device with charge transfer direction biasing implants
12/04/1990CA1277440C Compound semiconductor device with laminated channel layer
12/04/1990CA1277439C Method for selective intermixing of layered structures composedof thin solid films
12/04/1990CA1277437C2 Mask surrogate semiconductor process
12/04/1990CA1277364C Apparatus for obtaining derivative of characteristic curve, and method of controlling operation, of electronic devices
12/04/1990CA1277107C Germanosilicate spin-on glasses
12/02/1990CA2018089A1 Method for simultaneously manufacturing n-channel mos transistors and vertical pnp bipolar transistors
11/1990
11/30/1990CA2017704A1 Laminated semiconductor sensor with vibrating element and associated method and product
11/29/1990WO1990014691A1 Low trigger voltage scr protection device and structure
11/29/1990WO1990014690A1 Voltage stress alterable esd protection structure
11/29/1990DE4016695A1 CMOS-type semiconductor component - has first conductivity substrate whose surface region contains region(s) with MOSFET, or bipolar transistor
11/28/1990EP0399881A2 Semiconductor device having two conductor layers and production method thereof
11/28/1990EP0399737A1 High voltage thin film transistor
11/28/1990EP0399664A1 Forming and removing polysilicon LDD spacers
11/28/1990EP0399601A1 Dark current reduction in buried channel charge coupled imaging device
11/28/1990EP0399530A1 Semiconductor device having an interposing layer between an electrode and a connection electrode
11/28/1990EP0399529A1 Semiconductor device manufacturing method and semiconductor device manufactured thereby
11/28/1990EP0399527A2 Non-volatile semiconductor memory device
11/28/1990EP0399476A2 Thyristor
11/28/1990EP0399454A2 Monolithic semiconductor device having CCD, bipolar and MOS structures
11/28/1990EP0399286A1 Manufacturing process for the active base of a bipolar transistor
11/28/1990EP0399261A2 Band-to-band induced substrate hot electron injection
11/28/1990EP0399241A1 Method of manufacturing a semiconductor device with a heterobipolar transistor
11/28/1990EP0399231A2 A semiconductor device and method of manufacturing the same
11/28/1990EP0399191A1 Fabrication process for a self-aligned, lightly-doped drain-source trench transistor
11/28/1990EP0399141A2 Method of fabricating a semiconductor device by capping a conductive layer with a nitride layer
11/28/1990EP0386085A4 Mosfet in silicon carbide
11/28/1990EP0236352B1 Multi-cell transistor
11/28/1990EP0231274B1 Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices
11/27/1990US4974240 Charge-coupled device floating diffusion output reset
11/27/1990US4974239 Output circuit of a charge transfer device
11/27/1990US4974207 Semiconductor memory device
11/27/1990US4974059 Semiconductor high-power mosfet device
11/27/1990US4974056 Stacked metal silicide gate structure with barrier
11/27/1990US4974055 Self-aligned interconnects for semiconductor devices
11/27/1990US4974051 MOS transistor with improved radiation hardness
11/27/1990US4974050 High voltage semiconductor device and method
11/27/1990US4974047 Light triggered thyristor
11/27/1990US4974046 Bipolar transistor with polysilicon stringer base contact
11/27/1990US4974045 Bi-polar transistor structure
11/27/1990US4974044 Devices having asymmetric delta-doping
11/27/1990US4974042 Semiconductor memory device with compact ROM memory cells
11/27/1990US4974040 Dynamic random access memory device and method of producing same
11/27/1990US4974038 Microwave transistor with double heterojunction
11/27/1990US4974037 Semiconductor arrangement with depletion layer majority carrier barrier
11/27/1990US4974036 Semiconductor superlattice heterostructures on nonplanar substrates
11/27/1990US4973922 Voltage controlled variable capacitor and oscillator using it
11/27/1990US4973910 Surface potential analyzer
11/27/1990US4973858 Resonant tunneling semiconductor devices
11/22/1990EP0398834A2 Method of forming contacts to a semiconductor device
11/22/1990EP0398468A2 Dielectrically isolated substrate and semiconductor device using the same
11/22/1990EP0398291A2 Method for manufacturing a semiconductor integrated circuit
11/22/1990EP0398247A2 Semidonductor device and method of manufacturing the same
11/22/1990EP0398120A1 Semiconductor device
11/22/1990EP0398098A2 Output buffer for reducing switching induced noise
11/22/1990EP0397987A1 Germanium channel silicon mosfet
11/22/1990EP0397898A1 Bipolar Bump transistor and method for its manufacture
11/22/1990EP0397727A1 Electronic appliance.
11/21/1990CN1010531B Complementary lateral insulated gate rectifiers
11/21/1990CN1010522B Charge-coupled device
11/20/1990US4972371 Semiconductor memory device
11/20/1990US4972370 Three-dimensional memory element and memory device
11/20/1990US4972249 Semiconductor component increasing the breakdown voltage
11/20/1990US4972247 High energy event protection for semiconductor devices
11/20/1990US4972246 Effective narrow band gap base transistor
11/20/1990US4972240 Vertical power MOS transistor
11/20/1990US4972239 Conductivity modulated MOSFET
11/20/1990US4972237 Metal-semiconductor field effect transistor device
11/20/1990US4971930 EPROM semiconductor device erasable with ultraviolet rays and manufacturing process thereof
11/20/1990US4971929 Radio frequency bipolar integrated circuits, tungsten contactors, dielectrics, vapor deposition
11/20/1990US4971926 Method of manufacturing a semiconductor device
11/20/1990US4971922 Method of fabricating semiconductor device
11/20/1990US4971921 Semiconductor device and method of manufacturing the same
11/20/1990CA1276723C Non-volatile electronic memory
11/19/1990CA2017102A1 Output buffer for reducing switching induced noise
11/15/1990WO1990013918A1 Field effect transistor
11/15/1990WO1990013917A1 Floating-gate charge-balance ccd
11/15/1990WO1990013916A1 Method of fabricating semiconductor devices
11/15/1990WO1990013912A1 Silicon oxide film and semiconductor device having the same
11/15/1990DE3915406A1 Cut=off wavelength diode - has ohmic contact fitted orthogonally to direction of electron propagation at one end of restricted zone
11/14/1990EP0397194A2 Semiconductor memory device having two types of memory cell
11/14/1990EP0397148A2 Heterostructure device and production method thereof
11/14/1990EP0397034A1 SRAM device using an ultra thin polycristalline Si film, and its manufacturing method
11/14/1990EP0397014A2 Aluminium/Boron P-Well
11/14/1990EP0396948A1 Bi-cmos integrated circuit
11/14/1990EP0396802A1 Method of making an integrated circuit structure having a lateral bipolar transistor
11/14/1990EP0396707A1 A latch up free, high voltage, cmos process for sub-half-micron devices.
11/14/1990EP0396663A1 Charge-coupled device.
11/13/1990US4970568 Semiconductor device and a process for producing a semiconductor device
11/13/1990US4970563 Semiconductor quantum well electron and hole waveguides
11/13/1990US4970497 Method and apparatus for sensing thermal stress in integrated circuits
11/13/1990US4970409 Voltage multiplier for nonvolatile semiconductor memory
11/13/1990US4970174 Method for making a BiCMOS semiconductor device
11/13/1990US4970173 Method of making high voltage vertical field effect transistor with improved safe operating area
11/13/1990CA1276315C Self aligned mesfet made using substitutional gate
11/13/1990CA1276314C Silicon ion implanted semiconductor device