Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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12/04/1990 | US4975384 Semiconductor substrate, floating gate transistor |
12/04/1990 | US4975383 Method for making an electrically erasable programmable read only memory cell having a three dimensional floating gate |
12/04/1990 | US4975382 Method of making a self-aligned field-effect transistor by the use of a dummy-gate |
12/04/1990 | US4975381 Patterned spacer film |
12/04/1990 | CA1277444C Process for preparing a charge coupled device with charge transfer direction biasing implants |
12/04/1990 | CA1277440C Compound semiconductor device with laminated channel layer |
12/04/1990 | CA1277439C Method for selective intermixing of layered structures composedof thin solid films |
12/04/1990 | CA1277437C2 Mask surrogate semiconductor process |
12/04/1990 | CA1277364C Apparatus for obtaining derivative of characteristic curve, and method of controlling operation, of electronic devices |
12/04/1990 | CA1277107C Germanosilicate spin-on glasses |
12/02/1990 | CA2018089A1 Method for simultaneously manufacturing n-channel mos transistors and vertical pnp bipolar transistors |
11/30/1990 | CA2017704A1 Laminated semiconductor sensor with vibrating element and associated method and product |
11/29/1990 | WO1990014691A1 Low trigger voltage scr protection device and structure |
11/29/1990 | WO1990014690A1 Voltage stress alterable esd protection structure |
11/29/1990 | DE4016695A1 CMOS-type semiconductor component - has first conductivity substrate whose surface region contains region(s) with MOSFET, or bipolar transistor |
11/28/1990 | EP0399881A2 Semiconductor device having two conductor layers and production method thereof |
11/28/1990 | EP0399737A1 High voltage thin film transistor |
11/28/1990 | EP0399664A1 Forming and removing polysilicon LDD spacers |
11/28/1990 | EP0399601A1 Dark current reduction in buried channel charge coupled imaging device |
11/28/1990 | EP0399530A1 Semiconductor device having an interposing layer between an electrode and a connection electrode |
11/28/1990 | EP0399529A1 Semiconductor device manufacturing method and semiconductor device manufactured thereby |
11/28/1990 | EP0399527A2 Non-volatile semiconductor memory device |
11/28/1990 | EP0399476A2 Thyristor |
11/28/1990 | EP0399454A2 Monolithic semiconductor device having CCD, bipolar and MOS structures |
11/28/1990 | EP0399286A1 Manufacturing process for the active base of a bipolar transistor |
11/28/1990 | EP0399261A2 Band-to-band induced substrate hot electron injection |
11/28/1990 | EP0399241A1 Method of manufacturing a semiconductor device with a heterobipolar transistor |
11/28/1990 | EP0399231A2 A semiconductor device and method of manufacturing the same |
11/28/1990 | EP0399191A1 Fabrication process for a self-aligned, lightly-doped drain-source trench transistor |
11/28/1990 | EP0399141A2 Method of fabricating a semiconductor device by capping a conductive layer with a nitride layer |
11/28/1990 | EP0386085A4 Mosfet in silicon carbide |
11/28/1990 | EP0236352B1 Multi-cell transistor |
11/28/1990 | EP0231274B1 Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices |
11/27/1990 | US4974240 Charge-coupled device floating diffusion output reset |
11/27/1990 | US4974239 Output circuit of a charge transfer device |
11/27/1990 | US4974207 Semiconductor memory device |
11/27/1990 | US4974059 Semiconductor high-power mosfet device |
11/27/1990 | US4974056 Stacked metal silicide gate structure with barrier |
11/27/1990 | US4974055 Self-aligned interconnects for semiconductor devices |
11/27/1990 | US4974051 MOS transistor with improved radiation hardness |
11/27/1990 | US4974050 High voltage semiconductor device and method |
11/27/1990 | US4974047 Light triggered thyristor |
11/27/1990 | US4974046 Bipolar transistor with polysilicon stringer base contact |
11/27/1990 | US4974045 Bi-polar transistor structure |
11/27/1990 | US4974044 Devices having asymmetric delta-doping |
11/27/1990 | US4974042 Semiconductor memory device with compact ROM memory cells |
11/27/1990 | US4974040 Dynamic random access memory device and method of producing same |
11/27/1990 | US4974038 Microwave transistor with double heterojunction |
11/27/1990 | US4974037 Semiconductor arrangement with depletion layer majority carrier barrier |
11/27/1990 | US4974036 Semiconductor superlattice heterostructures on nonplanar substrates |
11/27/1990 | US4973922 Voltage controlled variable capacitor and oscillator using it |
11/27/1990 | US4973910 Surface potential analyzer |
11/27/1990 | US4973858 Resonant tunneling semiconductor devices |
11/22/1990 | EP0398834A2 Method of forming contacts to a semiconductor device |
11/22/1990 | EP0398468A2 Dielectrically isolated substrate and semiconductor device using the same |
11/22/1990 | EP0398291A2 Method for manufacturing a semiconductor integrated circuit |
11/22/1990 | EP0398247A2 Semidonductor device and method of manufacturing the same |
11/22/1990 | EP0398120A1 Semiconductor device |
11/22/1990 | EP0398098A2 Output buffer for reducing switching induced noise |
11/22/1990 | EP0397987A1 Germanium channel silicon mosfet |
11/22/1990 | EP0397898A1 Bipolar Bump transistor and method for its manufacture |
11/22/1990 | EP0397727A1 Electronic appliance. |
11/21/1990 | CN1010531B Complementary lateral insulated gate rectifiers |
11/21/1990 | CN1010522B Charge-coupled device |
11/20/1990 | US4972371 Semiconductor memory device |
11/20/1990 | US4972370 Three-dimensional memory element and memory device |
11/20/1990 | US4972249 Semiconductor component increasing the breakdown voltage |
11/20/1990 | US4972247 High energy event protection for semiconductor devices |
11/20/1990 | US4972246 Effective narrow band gap base transistor |
11/20/1990 | US4972240 Vertical power MOS transistor |
11/20/1990 | US4972239 Conductivity modulated MOSFET |
11/20/1990 | US4972237 Metal-semiconductor field effect transistor device |
11/20/1990 | US4971930 EPROM semiconductor device erasable with ultraviolet rays and manufacturing process thereof |
11/20/1990 | US4971929 Radio frequency bipolar integrated circuits, tungsten contactors, dielectrics, vapor deposition |
11/20/1990 | US4971926 Method of manufacturing a semiconductor device |
11/20/1990 | US4971922 Method of fabricating semiconductor device |
11/20/1990 | US4971921 Semiconductor device and method of manufacturing the same |
11/20/1990 | CA1276723C Non-volatile electronic memory |
11/19/1990 | CA2017102A1 Output buffer for reducing switching induced noise |
11/15/1990 | WO1990013918A1 Field effect transistor |
11/15/1990 | WO1990013917A1 Floating-gate charge-balance ccd |
11/15/1990 | WO1990013916A1 Method of fabricating semiconductor devices |
11/15/1990 | WO1990013912A1 Silicon oxide film and semiconductor device having the same |
11/15/1990 | DE3915406A1 Cut=off wavelength diode - has ohmic contact fitted orthogonally to direction of electron propagation at one end of restricted zone |
11/14/1990 | EP0397194A2 Semiconductor memory device having two types of memory cell |
11/14/1990 | EP0397148A2 Heterostructure device and production method thereof |
11/14/1990 | EP0397034A1 SRAM device using an ultra thin polycristalline Si film, and its manufacturing method |
11/14/1990 | EP0397014A2 Aluminium/Boron P-Well |
11/14/1990 | EP0396948A1 Bi-cmos integrated circuit |
11/14/1990 | EP0396802A1 Method of making an integrated circuit structure having a lateral bipolar transistor |
11/14/1990 | EP0396707A1 A latch up free, high voltage, cmos process for sub-half-micron devices. |
11/14/1990 | EP0396663A1 Charge-coupled device. |
11/13/1990 | US4970568 Semiconductor device and a process for producing a semiconductor device |
11/13/1990 | US4970563 Semiconductor quantum well electron and hole waveguides |
11/13/1990 | US4970497 Method and apparatus for sensing thermal stress in integrated circuits |
11/13/1990 | US4970409 Voltage multiplier for nonvolatile semiconductor memory |
11/13/1990 | US4970174 Method for making a BiCMOS semiconductor device |
11/13/1990 | US4970173 Method of making high voltage vertical field effect transistor with improved safe operating area |
11/13/1990 | CA1276315C Self aligned mesfet made using substitutional gate |
11/13/1990 | CA1276314C Silicon ion implanted semiconductor device |