Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1990
12/25/1990US4980740 MOS-pilot structure for an insulated gate transistor
12/25/1990US4980739 Self-aligned bipolar transistor using selective polysilicon growth
12/25/1990US4980738 Single polysilicon layer transistor with reduced emitter and base resistance
12/25/1990US4980732 Semiconductor device having an improved thin film transistor
12/25/1990US4980731 Atomic planar-doped field-effect transistor
12/25/1990US4980315 Compensating for the curvature of junction ino wafer with a diffusion front that curves in oppsite direction
12/25/1990US4980312 Method of manufacturing a semiconductor device having a mesa structure
12/25/1990US4980309 Method of making high density EEPROM
12/25/1990US4980308 Method of making a thin film transistor
12/25/1990US4980307 Formed by heating silicon dioxide film in a plasma nitriding atmosphere
12/25/1990US4980306 Method of making a CMOS device with trench isolation device
12/25/1990US4980305 Base regions and collector portions are surrounded by a trench; each trench surrounded by a common lead out; reduced collector resistance
12/25/1990US4980304 Process for fabricating a bipolar transistor with a self-aligned contact
12/25/1990US4980302 Method of manufacturing bipolar transistor having a reduced parasitic capacitance
12/20/1990DE4013662A1 Active semiconductor structure esp. FET prodn.
12/19/1990EP0403449A2 Mixed technology intergrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
12/19/1990EP0403368A1 Method of fabricating an integrated circuit with a double implanted field-effect transistor
12/19/1990EP0403279A1 High voltage thin film transistor with second gate
12/19/1990EP0403267A2 Semiconductor device
12/19/1990EP0403113A2 Field effect semiconductor devices and methods of fabrication thereof
12/19/1990EP0403009A1 A method of manufacturing a semiconductor device
12/19/1990EP0402936A2 Electrode structure for III-V compound semiconductor element and method of manufacturing the same
12/19/1990EP0402851A2 Semiconductor device including inversion preventing layers having a plurality of impurity concentration peaks in direction of depth and method of manufacturing the same
12/19/1990EP0402784A2 Method of manufacturing a CMOS semiconductor device
12/19/1990EP0402482A1 Method of forming pattern
12/18/1990US4979172 Microcomputer
12/18/1990US4979146 Electrically erasable non-volatile semiconductor device
12/18/1990US4979014 MOS transistor
12/18/1990US4979011 SCR structure for fast turn-on switching
12/18/1990US4979010 VLSI self-aligned bipolar transistor
12/18/1990US4979009 Heterojunction bipolar transistor
12/18/1990US4979008 Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components
12/18/1990US4979006 Reverse staggered type silicon thin film transistor
12/18/1990US4979005 Floating-gate memory cell with tailored doping profile
12/18/1990US4979004 Nonvolatile storage device
12/18/1990US4979003 Nonalloyed ohmic source-drain contacts from channel layer coated with contact mediating lanthanide-arsenide and a gallium-aresenide layer on which nickel is vaporized
12/18/1990US4979001 Hidden zener diode structure in configurable integrated circuit
12/18/1990US4978637 Patterning multilayers of a metal conductor and polycrystal-line silicon; simplification
12/18/1990US4978636 Method of making a semiconductor diode
12/18/1990US4978631 Current source with a process selectable temperature coefficient
12/18/1990US4978630 Fabrication method of bipolar transistor
12/18/1990US4978629 Double diffusion structure with high concentration and low concentration impurity regions
12/18/1990US4978626 LDD transistor process having doping sensitive endpoint etching
12/18/1990US4978421 Masking one side of a wafer, removal of undoped silicon to expose doped silicon membrane on the opposite side
12/13/1990WO1990015444A1 Semiconductor device
12/13/1990WO1990015443A1 Mos device for long-term learning
12/13/1990WO1990015442A1 Low voltage triggered snap-back device
12/13/1990WO1990015440A1 Overvoltage protective circuit for mos components
12/13/1990WO1990015436A1 Method of producing compound semiconductor devices
12/13/1990WO1990015414A1 Nvram with integrated sram and nv circuit
12/13/1990DE4014207A1 Bipolar GTO power semiconductor component - has several doped P-emitter regions on anode side, coupled to anode
12/12/1990EP0402296A1 Field-effect-transistor with asymmetrical structure
12/12/1990EP0402271A2 Magnetic field sensitive semiconductor device
12/12/1990EP0402209A1 Semiconductor device having an epitaxial layer grown heteroepitaxially on an underlying substrate
12/12/1990EP0402136A2 Semiconductor device having multiple epitaxial layers
12/12/1990EP0401786A2 Method of manufacturing a lateral bipolar transistor
12/12/1990EP0401716A2 High voltage complementary NPN/PNP process
12/12/1990EP0401635A2 Manufacturing method of a detector using resistance elements
12/12/1990EP0401577A1 Metal oxide-semiconductor device and fabrication method of the same
12/12/1990EP0401356A1 Ultrathin submicron mosfet with intrinsic channel
12/12/1990EP0401354A1 Semiconductor device comprising an integrated circuit having a vertical transistor.
12/11/1990US4977476 Semiconductor switch
12/11/1990US4977438 Turn-off semiconductor component and use thereof
12/11/1990US4977435 Semiconductor device with a split conduction channel
12/11/1990US4977434 Field-effect semiconductor device comprising an ancillary electrode
12/11/1990US4977341 Integrated circuit to reduce switching noise
12/11/1990US4977333 Power semiconductor device including an arrangement for controlling load current by independent control of a plurality of semiconductor elements
12/11/1990US4977107 Etching cavity into semiconductor substrate, doping
12/11/1990US4977100 Method of fabricating a MESFET
12/11/1990US4977098 Method of forming a self-aligned bipolar transistor using amorphous silicon
12/11/1990CA1277780C High performance sidewall emitter transistor
12/11/1990CA1277779C Method for production of compound semiconductor devices
12/09/1990CA2011233A1 Field-effect-transistor with asymmetrical structure
12/06/1990DE4016848A1 Cpd. semiconductor MISFET with reduced source resistance - has gate Schottky electrode between source and drain electrodes on undoped semiconductor layer
12/06/1990DE4014128A1 Gallium arsenide FET with damage zone at gate side - has charge integral reduced over channel depth at gate side
12/06/1990DE3918090A1 Schutzschaltung gegen ueberspannungen fuer mos-bauelemente Protection circuit against over voltages for mos devices
12/06/1990DE3918060A1 Bipolar semiconductor device prodn. - with low capacitance back face contact
12/06/1990DE3917769A1 Thyristor with emitter shunt connections - has N-doped thermally conductive N-base extensions
12/06/1990DE3917766A1 Thyristor with anode-side emitter short-circuits - has inserted P-conductive zone for reverse blocking capability
12/06/1990DE3917685A1 Majority charge carrier-device - with semiconductor layer system having band-gap decreasing towards surface
12/05/1990EP0401174A1 Surface field effect transistor with depressed source and/or drain areas for ulsi integrated devices
12/05/1990EP0401135A1 Method of fabricating simultaneous of N-channel MOS transistors and vertical bipolar PNP transistors
12/05/1990EP0401070A1 Charge transfer device having its bulk polarized by a rectifier contact
12/05/1990EP0400939A2 Semiconductor sensor with vibrating element
12/05/1990EP0400934A2 Method of fabrication of a semiconductor device with graded junction region
12/05/1990EP0400877A2 Contact metallization of semiconductor integrated circuit devices
12/05/1990EP0400822A1 Electronic device comprising a semiconductor device having a constricted current path
12/05/1990EP0400821A2 Local interconnect for integrated circuits
12/05/1990EP0400670A2 Semiconductor memory device and method of manufacturing the same
12/05/1990EP0400483A2 Programming method for semiconductor memory device
12/05/1990EP0400178A1 Semiconductor device with a passivation layer
12/05/1990EP0400153A1 Optical semiconductor device having a zero-crossing function
12/05/1990CN1047589A Charge-coupled device and image sensor arrangement comprising such charge-coupled device and camera provided with such image sensor arrangement
12/04/1990US4975782 Field effect controlled, bipolar power semiconductor component with silicide layer
12/04/1990US4975757 Complementary semiconductor device
12/04/1990US4975755 Optically controllable static induction thyristor device
12/04/1990US4975754 Trench dual-gate MOSFET
12/04/1990US4975751 High breakdown active device structure with low series resistance
12/04/1990US4975750 Semiconductor device
12/04/1990US4975385 Method of constructing lightly doped drain (LDD) integrated circuit structure
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