| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/09/1991 | EP0406890A2 Charge transfer device and its driving method |
| 01/09/1991 | EP0406886A2 Field-emission type switching device and method of manufacturing it |
| 01/09/1991 | EP0406883A2 Bipolar type semiconductor device and method of making same |
| 01/09/1991 | EP0406882A2 Ohmic connection electrodes for p-type semiconductor diamonds |
| 01/09/1991 | EP0406861A2 Non-volatile semiconductor memory device |
| 01/09/1991 | EP0406690A2 Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same |
| 01/09/1991 | EP0192668B1 Semiconductor integrated circuits gettered with phosphorus |
| 01/08/1991 | US4984063 Semiconductor device |
| 01/08/1991 | US4984053 Bipolar transistor with reduced parasitic capacitance |
| 01/08/1991 | US4984051 Semiconductor device having directly connected source terminal |
| 01/08/1991 | US4984049 Static induction thyristor |
| 01/08/1991 | US4984048 Semiconductor device with buried side contact |
| 01/08/1991 | US4984046 Silicon pressure sensor having a resistance layer of polycrystalline semicondutor |
| 01/08/1991 | US4984045 Semiconductor |
| 01/08/1991 | US4984043 Fermi threshold field effect transistor |
| 01/08/1991 | US4984042 MOS transistors using selective polysilicon deposition |
| 01/08/1991 | US4984041 High voltage thin film transistor with second control electrode |
| 01/08/1991 | US4984040 Semiconductor |
| 01/08/1991 | US4984037 Semiconductor device with conductive rectifying rods |
| 01/08/1991 | US4984036 Field effect transistor with multiple grooves |
| 01/08/1991 | US4984033 Thin film semiconductor device with oxide film on insulating layer |
| 01/08/1991 | US4984031 Integrated circuit arrangement |
| 01/08/1991 | US4984030 Vertical MOSFET DRAM |
| 01/08/1991 | US4983544 Silicide bridge contact process |
| 01/08/1991 | US4983540 Ultrafine ion beam, semiconductors, optoelectronic integrated circuits |
| 01/08/1991 | US4983539 Crystallization from amorphous nucleation surface, crystal regions with differing electrical properties |
| 01/08/1991 | US4983538 Semiconductor on insulator structure |
| 01/08/1991 | US4983536 Method of fabricating junction field effect transistor |
| 01/08/1991 | US4983535 Parasitic bipolar transistor cannot be turned on |
| 01/08/1991 | US4983534 Heterojunction bipolar transistor |
| 01/08/1991 | US4983532 Burying a metal collector electrode in a hole with dielectric coating on sidewalls |
| 01/08/1991 | CA1278884C Semiconductor device based on charge emission from a quantum well |
| 01/08/1991 | CA1278883C Process for making self-aligning thin film transistors |
| 01/08/1991 | CA1278863C Charge-coupled device |
| 01/08/1991 | CA1278849C Active matrix display screen using hydrogenated amorphous silicon carbide and process for producing this screen |
| 01/03/1991 | DE4018977A1 EEPROM with NAND memory cells - has potential stabiliser above semiconductor support layer, next to respective data transmission line |
| 01/02/1991 | EP0406007A2 Non volatile semiconductor memory device |
| 01/02/1991 | EP0405979A2 Method of forming a bipolar transistor having closely spaced device regions |
| 01/02/1991 | EP0405877A2 Thermally optimized interdigitated transistor |
| 01/02/1991 | EP0405832A1 Doping procedures for semiconductor devices |
| 01/02/1991 | EP0405822A1 Semiconductor power device |
| 01/02/1991 | EP0405564A2 Quantum wire field effect transistor |
| 01/02/1991 | EP0405500A2 Method of manufacturing semiconductor device |
| 01/02/1991 | EP0405458A2 Ultraviolet-erasable type non-volatile semiconductor memory device having multilayered wiring structure |
| 01/02/1991 | EP0405422A1 Irradiation and annealing of semiconductor devices for improved device characteristics |
| 01/02/1991 | EP0405401A2 Apparatus for transferring electric charges |
| 01/02/1991 | EP0405293A1 Silicide compatible CMOS process with a differential oxide implant mask |
| 01/02/1991 | EP0405292A1 Double-diffused drain CMOS process using a counterdoping technique |
| 01/02/1991 | EP0405256A1 A method of hatching micrometric contacts in semiconductor electronic devices |
| 01/02/1991 | EP0405210A2 High speed charge-coupled sampler and rate reduction circuit |
| 01/02/1991 | EP0405200A1 MOS-gated bipolar power semiconductor device |
| 01/02/1991 | EP0405183A2 Dielectric isolation used in high voltage power IC process |
| 01/02/1991 | EP0405140A1 Bit- and block-erasing of an electrically erasable and programmable read-only memory array |
| 01/02/1991 | EP0405138A2 Insulated gate bipolar transistor and method of making the same |
| 01/02/1991 | EP0405063A2 An insulated-gate fet on an soi-structure |
| 01/02/1991 | EP0405045A1 A mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof |
| 01/02/1991 | EP0404863A1 Monolithically integrated electronic apparatus |
| 01/02/1991 | CN1048283A Gap measuring device |
| 01/01/1991 | US4982377 Erasable programmable read only memory device improved in operation speed and in the amount of read out current |
| 01/01/1991 | US4982262 Inverted groove isolation technique for merging dielectrically isolated semiconductor devices |
| 01/01/1991 | US4982261 Thyristor type having a pnpn junction |
| 01/01/1991 | US4982260 Power rectifier with trenches |
| 01/01/1991 | US4982259 Sensitive thyristor having improved noise-capability |
| 01/01/1991 | US4982258 Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
| 01/01/1991 | US4982257 A substrate of semiconductor material |
| 01/01/1991 | US4982254 Differentially magnetically sensitive diode structure |
| 01/01/1991 | US4982251 Silicon with fluorine atoms |
| 01/01/1991 | US4982250 Semiconductors |
| 01/01/1991 | US4982249 Double diffused MOSFET cell |
| 01/01/1991 | US4982248 Gated structure for controlling fluctuations in mesoscopic structures |
| 01/01/1991 | US4982247 Semi-conductor device |
| 01/01/1991 | US4982245 Compound diode assembly of reduced leakage current |
| 01/01/1991 | US4982244 Buried Schottky clamped transistor |
| 01/01/1991 | US4982243 Single crystal substrate |
| 01/01/1991 | US4981810 Process for creating field effect transistors having reduced-slope, staircase-profile sidewall spacers |
| 01/01/1991 | US4981809 Method of forming a mask pattern for the production of transistor |
| 01/01/1991 | US4981808 Intermetallics |
| 01/01/1991 | US4981807 Semiconductors |
| 01/01/1991 | US4981806 Doping |
| 12/27/1990 | WO1990016085A1 Apparatus and method for a dual thickness dielectric floating gate memory cell |
| 12/27/1990 | WO1990016084A1 An improved programmable semi-conductor resistive element |
| 12/27/1990 | EP0404464A2 Manufacture of semiconductor devices |
| 12/27/1990 | EP0404360A2 Shielded transistor device |
| 12/27/1990 | EP0404306A2 Trench structured charge-coupled device |
| 12/27/1990 | EP0404295A1 Method for fabricatinf integrated circuit capacitors |
| 12/27/1990 | EP0404180A2 Semiconductor integrated circuit and method of making the same |
| 12/27/1990 | EP0404109A2 Diode used in reference potential generating circuit for DRAM |
| 12/27/1990 | EP0404095A2 Integratable power transistor with optimization of direct secondary breakdown phenomena |
| 12/27/1990 | EP0404026A2 Circuit to reduce the sensibility to latch-up in a CMOS circuit |
| 12/27/1990 | CA1278273C Forming polycide structure comprised of polysilicon, silicon, and metal silicide lavers |
| 12/26/1990 | CN1011002B Single-temp.-zone open tube diffusion technology of gallium for producing thyristors |
| 12/26/1990 | CA2019826A1 Transistor device drive circuit |
| 12/25/1990 | US4980859 NOVRAM cell using two differential decouplable nonvolatile memory elements |
| 12/25/1990 | US4980751 Electrical multilayer contact for microelectronic structure |
| 12/25/1990 | US4980750 Semiconductor crystal |
| 12/25/1990 | US4980749 P-N junction semiconductor device and method of fabrication |
| 12/25/1990 | US4980748 Semiconductor device made with a trenching process |
| 12/25/1990 | US4980744 Semiconductor integrated circuit device and a method for manufacturing the same |
| 12/25/1990 | US4980743 Conductivity-modulation metal oxide semiconductor field effect transistor |
| 12/25/1990 | US4980742 Turn-off thyristor |