| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/05/1991 | US4990489 Read only memory device including a superconductive electrode |
| 02/05/1991 | US4990462 Using flotation liquid |
| 02/05/1991 | US4990461 Method of making a semiconductor integrated circuit device having resistance elements |
| 02/05/1991 | US4990460 Fabrication method for thin film field effect transistor array suitable for liquid crystal display |
| 01/30/1991 | EP0410911A1 Process of manufacturing an integrated power transistor/logic circuit comprising a diode. |
| 01/30/1991 | EP0410799A2 High voltage thin film transistor with second control electrode |
| 01/30/1991 | EP0410635A1 Window taper-etching method in the manufacture of integrated circuit semiconductor devices |
| 01/30/1991 | EP0410633A2 Planar isolation technique for integrated circuits |
| 01/30/1991 | EP0410513A2 Device for protection against the parasitic effects caused by negative impulses of power supply voltages in monolithic integrated circuits including a power device for driving an inductive load and a control device for said power device |
| 01/30/1991 | EP0410508A2 Process for defining and forming an active region of very limited dimensions in a semiconductor layer |
| 01/30/1991 | EP0410492A2 Non-volatile semiconductor memory device having an improved testing mode of operation and method of forming checkerwise test pattern in memory cell array |
| 01/30/1991 | EP0410444A2 Ohmic contact electrodes for semiconductor diamonds |
| 01/30/1991 | EP0410424A2 Nonvolatile semiconductor device and method of manufacturing the same |
| 01/30/1991 | EP0410392A1 Semiconductor device having a high breakdown voltage |
| 01/30/1991 | EP0410385A2 Method of manufacturing a semiconductor device comprising a T-gate |
| 01/30/1991 | EP0409970A1 Interline transfer ccd image sensing device with electrode structure for each pixel |
| 01/29/1991 | US4989065 Geranium and palladium layers on gallium and arsenic semiconductor |
| 01/29/1991 | US4989058 Fast switching lateral insulated gate transistors |
| 01/29/1991 | US4989057 ESD protection for SOI circuits |
| 01/29/1991 | US4989056 Semiconductor capacitor |
| 01/29/1991 | US4989055 Dynamic random access memory cell |
| 01/29/1991 | US4989054 Non-volatile semiconductor memory device using contact hole connection |
| 01/29/1991 | US4989053 Nonvolatile process compatible with a digital and analog double level metal MOS process |
| 01/29/1991 | US4989052 Quantum effect semiconductor device |
| 01/29/1991 | US4988638 Method of fabrication a thin film SOI CMOS device |
| 01/29/1991 | US4988635 Method of manufacturing non-volatile semiconductor memory device |
| 01/29/1991 | US4988634 Method for forming FET with a super lattice channel |
| 01/29/1991 | US4988633 Multilayer semiconductor, doped layer with apertures, insulators, masking, emitters |
| 01/24/1991 | WO1990010309A3 Fermi threshold field effect transistor |
| 01/24/1991 | DE4022398A1 Thermal stabilisation of titanium-silicide film in IC - by formation of oxide-film on top by thermal oxidn. preventing redistribution during heat treatment |
| 01/23/1991 | EP0409746A1 Integrated VDMOS/logic circuit comprising a vertical depletion transistor and a zener diode |
| 01/23/1991 | EP0409697A1 MOS integrated circuit with adjustable threshold voltage |
| 01/23/1991 | EP0409681A1 Process for manufacturing hyper-narrow grids |
| 01/23/1991 | EP0409561A2 Methods of manufacturing MIS semiconductor devices |
| 01/23/1991 | EP0409370A2 Bipolar transistor |
| 01/23/1991 | EP0409245A2 Charge transfer device provided with improved output structure |
| 01/23/1991 | EP0409244A2 Step device in miniature shovel car |
| 01/23/1991 | EP0409158A1 Substrate injection clamp |
| 01/23/1991 | EP0409132A2 Method of fabricating a structure having self-aligned diffused junctions |
| 01/23/1991 | EP0409042A2 Word erasable buried bit line EEPROM |
| 01/23/1991 | EP0409041A1 A method for forming a thick base oxide in a BiCMOS process |
| 01/23/1991 | EP0409010A1 Switchable semiconductor power device |
| 01/23/1991 | EP0408868A2 High voltage semiconductor device and fabrication process |
| 01/23/1991 | EP0408721A1 Bipolar transistor and method for the manufacture thereof |
| 01/23/1991 | EP0408653A1 Gate dielectric for a thin film field effect transistor |
| 01/22/1991 | US4987580 Charge transfer device having capacitive feedback |
| 01/22/1991 | US4987562 Semiconductor layer structure having an aluminum-silicon alloy layer |
| 01/22/1991 | US4987558 Semiconductor memory with voltage stabilization |
| 01/22/1991 | US4987469 Lateral high-voltage transistor suitable for use in emitter followers |
| 01/22/1991 | US4987468 Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser |
| 01/22/1991 | US4987467 Integratable hall element |
| 01/22/1991 | US4987464 Encapsulated FET semiconductor device with large W/L ratio |
| 01/22/1991 | US4987463 FET having a high trap concentration interface layer |
| 01/22/1991 | US4987462 Power MISFET |
| 01/22/1991 | US4987459 Variable capacitance diode element having wide capacitance variation range |
| 01/22/1991 | US4987458 Semiconductor biased superlattice tunable interference filter/emitter |
| 01/22/1991 | US4987430 Organic semiconductor device based on phthalocyanine |
| 01/22/1991 | US4987382 Microwave integrated circuit having a level shift circuit |
| 01/22/1991 | US4987098 Method of producing a metal-oxide semiconductor device |
| 01/22/1991 | US4987095 Gate insulator such as silica on gallium arsenide |
| 01/22/1991 | US4987092 Diffusion of impurities from sidewalls of conductor layer, reslting in self-aligned channel region |
| 01/22/1991 | US4987087 Process for manufacturing a thyristor with proton irradiation |
| 01/22/1991 | US4986861 Through glass bonded to metal oxide layer |
| 01/22/1991 | US4986131 Semiconductor strain detector |
| 01/22/1991 | US4986127 Multi-functional sensor |
| 01/22/1991 | CA1279410C Submicron bipolar transistor with buried silicide region |
| 01/22/1991 | CA1279409C Composite semiconductor device |
| 01/22/1991 | CA1279369C Electrical system utilizing a concentric collector pnp transistor |
| 01/16/1991 | EP0408457A1 CMOS integrated circuit structure protected against electrostatic discharges |
| 01/16/1991 | EP0408252A2 Heterojunction bipolar transistor |
| 01/16/1991 | EP0408129A2 A thin film field effect transistor |
| 01/16/1991 | EP0408025A2 Charge transfer device and solid state image pickup device using charge transfer device |
| 01/16/1991 | EP0408001A2 Semiconductor device having a selectively doped heterostructure |
| 01/16/1991 | EP0407848A2 Trimming circuit and trimming method performable using such a trimming circuit |
| 01/16/1991 | EP0407704A1 Diffusion of implanted dopant and polysilicon oxidation processes for VDMOS |
| 01/16/1991 | EP0407587A1 Pressure sensor |
| 01/16/1991 | EP0265489B1 Process for manufacturing semiconductor devices |
| 01/16/1991 | CN1048568A Process for continuously forming large area functional deposited film by microwave pcvd method and apparatus suitable for practicing same |
| 01/15/1991 | US4985750 Semiconductor device using copper metallization |
| 01/15/1991 | US4985746 Semiconductor device and method of production |
| 01/15/1991 | US4985744 Method for forming a recessed contact bipolar transistor and field effect transistor |
| 01/15/1991 | US4985743 Insulated gate bipolar transistor |
| 01/15/1991 | US4985742 High temperature semiconductor devices having at least one gallium nitride layer |
| 01/15/1991 | US4985741 MOS-controlled bipolar power semiconductor component |
| 01/15/1991 | US4985740 Power field effect devices having low gate sheet resistance and low ohmic contact resistance |
| 01/15/1991 | US4985739 Low-leakage JFET |
| 01/15/1991 | US4985738 Semiconductor switching device |
| 01/15/1991 | US4985737 Solid state quantum mechanical electron and hole wave devices |
| 01/15/1991 | US4985717 MOS memory cell with exponentially-profiled doping and offset floating gate tunnel oxidation |
| 01/15/1991 | US4985367 Method of manufacturing a lateral transistor |
| 01/12/1991 | CA2019921A1 Trimming circuit and trimming method performable using such a trimming circuit |
| 01/10/1991 | DE4019967A1 Miniaturised semiconductor device - e.g. vertical MOS transistor, with reduced switch-on resistance |
| 01/09/1991 | EP0407250A1 Electromagnetic wave detector |
| 01/09/1991 | EP0407202A2 Manufacturing semiconductor devices |
| 01/09/1991 | EP0407168A2 A thin film semiconductor array device |
| 01/09/1991 | EP0407133A2 Semiconductor device and method of manufacturing such semiconductor device |
| 01/09/1991 | EP0407130A1 A low noise and high gain mesfet having improved performance at low current levels |
| 01/09/1991 | EP0407111A2 A method for fabrication of a collector-diffused isolation semiconductor device |
| 01/09/1991 | EP0407011A2 Insulated gate semiconductor devices |
| 01/09/1991 | EP0406916A2 Conductivity modulation type semiconductor device and method for manufacturing the same |